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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Output Peak Current Limit-Nom | Built-in Protections | Output Current Flow Direction | Output Current-Max | Driver Number of Bits | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUM110P08-11-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110p0811e3-datasheets-3282.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | TO-263 (D2Pak) | 11.5nF | 25 ns | 410ns | 470 ns | 145 ns | 110A | 20V | 80V | 13.6W Ta 375W Tc | 11.1mOhm | P-Channel | 11500pF @ 40V | 11.1mOhm @ 20A, 10V | 4V @ 250μA | 110A Tc | 280nC @ 10V | 11.1 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90P10-19L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum90p1019le3-datasheets-0383.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 19mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 375W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 510ns | 870 ns | 145 ns | -90A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 13.6W Ta 375W Tc | 245 mJ | -100V | P-Channel | 11100pF @ 50V | -3 V | 19m Ω @ 20A, 10V | 3V @ 250μA | 90A Tc | 326nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40P10-43-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40p1043ge3-datasheets-3330.pdf | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 2W | 1 | Other Transistors | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 100V | 2W Ta 125W Tc | TO-220AB | 40A | P-Channel | 4600pF @ 50V | 43m Ω @ 10A, 10V | 3V @ 250μA | 36A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ300DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-siz300dtt1ge3-datasheets-4806.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | Lead Free | 8 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | 31W | 260 | SIZ300 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | 80ns | 40 ns | 28A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 16.7W 31W | 11A | 30A | 7 mJ | 30V | 2 N-Channel (Half Bridge) | 400pF @ 15V | 24m Ω @ 9.8A, 10V | 2.4V @ 250μA | 11A 28A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP75P03-07-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sub75p0307e3-datasheets-7696.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | No SVHC | 7mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 187W | 1 | Other Transistors | 25 ns | 225ns | 210 ns | 150 ns | -75A | 20V | SILICON | DRAIN | 30V | -1V | 3.75W Ta 187W Tc | TO-220AB | 240A | -30V | P-Channel | 9000pF @ 25V | -3 V | 7m Ω @ 30A, 10V | 3V @ 250μA | 75A Tc | 240nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ918DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siz918dtt1ge3-datasheets-5816.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 14 Weeks | Unknown | 10 | EAR99 | No | 100W | SIZ918 | 2 | Dual | 2 | R-PDSO-N6 | 40 ns | 28A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 29W 100W | 16A | 50A | 16 mJ | 30V | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12m Ω @ 13.8A, 10V | 2.2V @ 250μA | 16A 28A | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1414DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1414dht1ge3-datasheets-8434.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 15 Weeks | 28.009329mg | 46mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.56W | 1 | FET General Purpose Power | 6 ns | 10ns | 10 ns | 20 ns | 4A | 8V | SILICON | SWITCHING | 2.8W Tc | 4A | 30V | N-Channel | 560pF @ 15V | 46m Ω @ 4A, 4.5V | 1V @ 250μA | 4A Tc | 15nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA400EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sia400edjt1ge3-datasheets-7705.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 3.5W | 1 | FET General Purpose Powers | S-PDSO-N3 | 12A | 12V | SILICON | DRAIN | SWITCHING | 19.2W Tc | 30A | 30V | N-Channel | 1265pF @ 15V | 19m Ω @ 11A, 4.5V | 1.5V @ 250μA | 12A Tc | 36nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-13L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud50p0413lge3-datasheets-4867.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 13mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 93.7mW | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 10ns | 20 ns | 50 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | -3V | 3W Ta 93.7W Tc | 50A | 80 mJ | 40V | P-Channel | 3120pF @ 25V | 13m Ω @ 30A, 10V | 3V @ 250μA | 60A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2319DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2319dst1e3-datasheets-9020.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 82mOhm | 3 | yes | EAR99 | Tin | No | 3A | e3 | 40V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 7 ns | 15ns | 15 ns | 25 ns | -3A | 20V | SILICON | SWITCHING | -3V | 750mW Ta | -40V | P-Channel | 470pF @ 20V | -3 V | 82m Ω @ 3A, 10V | 3V @ 250μA | 2.3A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1011X-T1-GE3 | Vishay Siliconix | $1.40 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1011xt1ge3-datasheets-3456.pdf | SC-89, SOT-490 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 190mW | 1 | 480mA | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 190mW Ta | 0.64Ohm | P-Channel | 62pF @ 6V | 640m Ω @ 400mA, 4.5V | 800mV @ 250μA | 4nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7812DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 3.8W Ta 52W Tc | 7.2A | 25A | 0.037Ohm | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3N163 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | 5.84mm | 5.33mm | 5.84mm | 4 | no | No | e0 | Tin/Lead (Sn/Pb) | 8 | 1 | Single | 375mW | Other Transistors | 5 ns | 13ns | 25 ns | 50mA | 30V | 40V | 375mW Ta | 0.05A | -40V | P-Channel | 3.5pF @ 15V | 250 Ω @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P06-15L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sud50p0615le3-datasheets-1667.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 15mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 3W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 70ns | 175 ns | 175 ns | -50A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 3W Ta 136W Tc | 80A | -60V | P-Channel | 4950pF @ 25V | -1 V | 15m Ω @ 17A, 10V | 3V @ 250μA | 50A Tc | 165nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS40N60K | Vishay Siliconix | $5.83 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps40n60kpbf-datasheets-5634.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | 38.000013g | 3 | No | 1 | Single | 570W | SUPER-247™ (TO-274AA) | 7.97nF | 47 ns | 110ns | 60 ns | 97 ns | 40A | 30V | 600V | 570W Tc | 130mOhm | 600V | N-Channel | 7970pF @ 25V | 130mOhm @ 24A, 10V | 5V @ 250μA | 40A Tc | 330nC @ 10V | 130 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P04-09L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqd50p0409lge3-datasheets-2137.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | GULL WING | 4 | 1 | Single | 136W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 15ns | 19 ns | 61 ns | 50A | 20V | SILICON | DRAIN | 40V | 40V | -1.5V | 136W Tc | 0.0094Ohm | P-Channel | 6675pF @ 20V | 9.4m Ω @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0808B-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | -280mA | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | 9 Weeks | Unknown | 3 | EAR99 | e3 | MATTE TIN | BOTTOM | WIRE | NOT SPECIFIED | 2 | 1 | Single | NOT SPECIFIED | 1 | Not Qualified | 11 ns | 30ns | 20 ns | 20 ns | -3A | 20V | SILICON | DRAIN | SWITCHING | 80V | 6.25W Ta | 0.88A | 5Ohm | 25 pF | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7846DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7846dpt1e3-datasheets-4892.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 50mOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 12 ns | 7ns | 7 ns | 22 ns | 6.7A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4.5V | 1.9W Ta | 4A | 50A | 150V | N-Channel | 4.5 V | 50m Ω @ 5A, 10V | 4.5V @ 250μA | 4A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR330DP-T1-GE3 | Vishay Siliconix | $3.58 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir330dpt1ge3-datasheets-0546.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 27.7W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1300pF @ 15V | 5.6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7415DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7415dnt1e3-datasheets-7720.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | Unknown | 65mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 12 ns | 12ns | 12 ns | 22 ns | -3.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 1.5W Ta | 30A | -60V | P-Channel | 65m Ω @ 5.7A, 10V | 3V @ 250μA | 3.6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE876DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie876dft1ge3-datasheets-9833.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 22 ns | 10ns | 10 ns | 25 ns | 60mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 5.2W Ta 125W Tc | 22A | 60A | 60V | N-Channel | 3100pF @ 30V | 6.1m Ω @ 20A, 10V | 4.4V @ 250μA | 60A Tc | 77nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR622DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir622dpt1ge3-datasheets-8525.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 150V | 104W Tc | N-Channel | 1516pF @ 75V | 17.7mOhm @ 20A, 10V | 4.5V @ 250μA | 51.6A Tc | 31nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N02-09P-GE3 | Vishay Siliconix | $2.76 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0209pge3-datasheets-2090.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 8kOhm | 3 | No | 1 | 8 ns | 10ns | 12 ns | 25 ns | 20A | 20V | 39.5W Tc | N-Channel | 1300pF @ 10V | 14m Ω @ 20A, 10V | 3V @ 250μA | 20A Ta | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7898DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7898dpt1e3-datasheets-9418.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 85mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 9 ns | 10ns | 10 ns | 24 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 150V | 2V | 1.9W Ta | 3A | 25A | N-Channel | 4 V | 85m Ω @ 3.5A, 10V | 4V @ 250μA | 3A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1002R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1002rt1ge3-datasheets-3562.pdf | SC-75A | 3 | 25 Weeks | 560mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 220mW Ta | N-Channel | 36pF @ 15V | 560m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 2nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS892ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis892adnt1ge3-datasheets-2688.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 5 | 14 Weeks | Unknown | 33MOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | FET General Purpose Powers | 150°C | S-PDSO-C5 | 10 ns | 16 ns | 7.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 3.7W Ta 52W Tc | 40A | 5 mJ | 100V | N-Channel | 550pF @ 50V | 33m Ω @ 10A, 10V | 3V @ 250μA | 28A Tc | 19.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | S | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60sge3-datasheets-5430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | YES | GULL WING | 4 | 1 | Not Qualified | 600V | 600V | 250W Tc | 22A | 65A | 0.19Ohm | 690 mJ | N-Channel | 2.81nF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0610K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-tp0610kt1e3-datasheets-5432.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 1.437803g | Unknown | 10Ohm | 3 | yes | EAR99 | ESD PROTECTION, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 20 | 350mW | 1 | Other Transistors | 150°C | 20 ns | 35 ns | -185mA | 20V | SILICON | SWITCHING | 60V | -3V | 350mW Ta | -60V | P-Channel | 23pF @ 25V | -3 V | 6 Ω @ 500mA, 10V | 3V @ 250μA | 185mA Ta | 1.7nC @ 15V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1040X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si1040xt1ge3-datasheets-6436.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | No SVHC | 625MOhm | 6 | On/Off | EAR99 | Tin | No | 8V | 1 | e3 | Slew Rate Controlled | 174mW | DUAL | FLAT | 2.5V | 0.5mm | SI1040 | 6 | 8V | 2 | 174mW | Peripheral Drivers | P-Channel | 1.8V~8V | 430mA | 8V | 1 | General Purpose | High Side | 1A | TRANSIENT | SOURCE SINK | 8A | 1 | 500mOhm | 500m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2302DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2302ddst1ge3-datasheets-5982.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 710mW | 1 | FET General Purpose Powers | 8 ns | 7ns | 7 ns | 30 ns | 2.6A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 710mW Ta | 0.057Ohm | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 2.9A Tj | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V |
