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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI1070X-T1-GE3 | Vishay Siliconix | $0.95 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1070xt1e3-datasheets-7798.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 14 Weeks | 32.006612mg | Unknown | 6 | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 1 | FET General Purpose Powers | 10 ns | 22ns | 22 ns | 14 ns | 1.2A | 12V | SILICON | SWITCHING | 236mW Ta | 0.099Ohm | 30V | N-Channel | 385pF @ 15V | 1.55 V | 99m Ω @ 1.2A, 4.5V | 1.55V @ 250μA | 8.3nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SIR873DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir873dpt1ge3-datasheets-8924.pdf | PowerPAK® SO-8 | 1.12mm | 5 | 14 Weeks | EAR99 | S17-0173_SINGLE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 1 | 150°C | R-PDSO-F5 | 15 ns | 28 ns | -9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 104W Tc | 37A | 50A | 0.0475Ohm | 80 mJ | -150V | P-Channel | 1805pF @ 75V | 47.5m Ω @ 10A, 10V | 4V @ 250μA | 37A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFP21N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfp21n60l-datasheets-9473.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 330W | 1 | TO-247-3 | 4nF | 20 ns | 58ns | 10 ns | 33 ns | 21A | 30V | 600V | 5V | 330W Tc | 320mOhm | 600V | N-Channel | 4000pF @ 25V | 5 V | 320mOhm @ 13A, 10V | 5V @ 250μA | 21A Tc | 150nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7460DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7460dpt1ge3-datasheets-4772.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 9.6mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 20 ns | 16ns | 30 ns | 75 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 40A | 60V | N-Channel | 9.6m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF830SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | 500V | 1.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 3.1W Ta 74W Tc | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7862ADP-T1-E3 | Vishay Siliconix | $4.02 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7862adpt1e3-datasheets-0452.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 3mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 42 ns | 38ns | 38 ns | 120 ns | 18A | 8V | SILICON | DRAIN | SWITCHING | 16V | 1.9W Ta | 60A | N-Channel | 7340pF @ 8V | 3m Ω @ 29A, 4.5V | 2V @ 250μA | 18A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| IRFI9630GPBF | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9630g-datasheets-8512.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 700pF | 2.5kV | 12 ns | 27ns | 24 ns | 28 ns | 4.3A | 20V | 200V | -4V | 35W Tc | 300 ns | 800mOhm | -200V | P-Channel | 700pF @ 25V | 800mOhm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQ9407EY-T1_GE3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq9407eyt1ge3-datasheets-2449.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 506.605978mg | 8 | 1 | Single | 3.75W | 1 | 8-SO | 11 ns | 13ns | 8 ns | 36 ns | -4.6A | 20V | 60V | 3.75W Tc | 115mOhm | P-Channel | 1140pF @ 30V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 4.6A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7850DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7850dpt1ge3-datasheets-4691.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | 150°C | R-PDSO-F5 | 10 ns | 10ns | 10 ns | 25 ns | 6.2A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3V | 1.8W Ta | 40A | 60V | N-Channel | 74ns | 40ns | 3 V | 22m Ω @ 10.3A, 10V | 3V @ 250μA | 6.2A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI5441BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5441bdct1e3-datasheets-3149.pdf | 8-SMD, Flat Lead | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | Other Transistors | 15 ns | 50ns | 50 ns | 50 ns | 61A | 12V | SILICON | 20V | 20V | 12V | 1.3W Ta | 4.4A | 0.045Ohm | P-Channel | 45m Ω @ 4.4A, 4.5V | 1.4V @ 250μA | 4.4A Ta | 22nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SIA449DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia449djt1ge3-datasheets-7831.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | 6 | EAR99 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 1 | Single | 3.5W | 1 | S-PDSO-N3 | 8 ns | 20ns | 16 ns | 39 ns | 12A | -1.5V | SILICON | DRAIN | SWITCHING | 30V | 3.5W Ta 19W Tc | 30A | 0.02Ohm | -30V | P-Channel | 2140pF @ 15V | 20m Ω @ 6A, 10V | 1.5V @ 250μA | 12A Tc | 72nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| SQ4435EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4435eyt1ge3-datasheets-4159.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8-SOIC | 30V | 6.8W Tc | P-Channel | 2170pF @ 15V | 18mOhm @ 8A, 10V | 2.5V @ 250μA | 15A Tc | 58nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR624DP-T1-GE3 | Vishay Siliconix | $4.53 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir624dpt1re3-datasheets-1809.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | 52W Tc | N-Channel | 1110pF @ 100V | 60mOhm @ 10A, 10V | 4V @ 250μA | 18.6A Tc | 23nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM60N20-35_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm60n2035ge3-datasheets-6016.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 375W Tc | 60A | 100A | 0.035Ohm | 33 mJ | N-Channel | 5850pF @ 25V | 35m Ω @ 20A, 10V | 3.5V @ 250μA | 60A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS71DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss71dnt1ge3-datasheets-1290.pdf | PowerPAK® 1212-8S | 5 | 14 Weeks | No SVHC | 8 | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N5 | -23A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | -2.5V | 57W Tc | 40A | 31 mJ | P-Channel | 1050pF @ 50V | 59m Ω @ 5A, 10V | 2.5V @ 250μA | 23A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM50020EL-GE3 | Vishay Siliconix | $34.96 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50020elge3-datasheets-6442.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 375W Tc | 300A | 0.0021Ohm | 281 mJ | N-Channel | 11113pF @ 30V | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 126nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9407BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si9407bdyt1ge3-datasheets-7869.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.4W | 1 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 3.2A | 20V | SILICON | SWITCHING | 60V | 5W Tc | 4.7A | -60V | P-Channel | 600pF @ 30V | 120m Ω @ 3.2A, 10V | 3V @ 250μA | 4.7A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHB22N60ET1-GE3 | Vishay Siliconix | $18.24 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 14 Weeks | TO-263 (D2Pak) | 600V | 227W Tc | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS780DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/vishaysiliconix-sis780dnt1ge3-datasheets-1317.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | EAR99 | unknown | e3 | MATTE TIN | YES | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | S-XDSO-C5 | 7 ns | 11ns | 9 ns | 14 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 27.7W Tc | 50A | N-Channel | 722pF @ 15V | 13.5m Ω @ 15A, 10V | 2.3V @ 250μA | 18A Tc | 24.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7898DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7898dpt1e3-datasheets-9418.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 85mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 9 ns | 10ns | 10 ns | 24 ns | 3A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 3A | 25A | 150V | N-Channel | 4 V | 85m Ω @ 3.5A, 10V | 4V @ 250μA | 3A Ta | 21nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR688DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir688dpt1ge3-datasheets-3256.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 8 | EAR99 | No | DUAL | C BEND | Single | 5.4W | 1 | R-PDSO-C5 | 8ns | 8 ns | 31 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 5.4W Ta 83W Tc | 0.0035Ohm | 45 mJ | N-Channel | 3105pF @ 30V | 3.5m Ω @ 20A, 10V | 2.7V @ 250μA | 60A Tc | 66nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ412EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj412ept1ge3-datasheets-3855.pdf | PowerPAK® SO-8 | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 83W | 1 | PowerPAK® SO-8 | 5.95nF | 45 ns | 150ns | 55 ns | 50 ns | 32A | 20V | 40V | 2V | 83W Tc | 4.5mOhm | N-Channel | 5950pF @ 20V | 2 V | 4.1mOhm @ 10.3A, 10V | 2.5V @ 250μA | 32A Tc | 120nC @ 10V | 4.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM55P06-19L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sum55p0619le3-datasheets-8087.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 19mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 125W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 15ns | 230 ns | 80 ns | -5.5A | 20V | SILICON | SWITCHING | 60V | -1V | 3.75W Ta 125W Tc | 55A | -60V | P-Channel | 3500pF @ 25V | 19m Ω @ 30A, 10V | 3V @ 250μA | 55A Tc | 115nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI8812DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si8812dbt2e1-datasheets-9171.pdf | 4-UFBGA | Lead Free | 4 | 44 Weeks | 4 | EAR99 | unknown | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 900mW | 1 | 3.2A | 8V | SILICON | SWITCHING | 20V | 20V | 500mW Ta | 0.065Ohm | N-Channel | 59m Ω @ 1A, 4.5V | 1V @ 250μA | 17nC @ 8V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA36DP-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | PowerPAK® SO-8 | 14 Weeks | 506.605978mg | 8 | No | 44.6W | 1 | Single | 4.1W | 1 | PowerPAK® SO-8 | 2.815nF | 12 ns | 10ns | 9 ns | 26 ns | 40A | -16V | 30V | 2.8mOhm | 30V | N-Channel | 2815pF @ 15V | 2.8mOhm @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 56nC @ 10V | 2.8 mΩ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840bpbf-datasheets-1324.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | SWITCHING | 5V | 156W Tc | TO-220AB | 0.85Ohm | 29 mJ | 500V | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP100P06-9M3L_GE3 | Vishay Siliconix | $7.04 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp100p069m3lge3-datasheets-1926.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 187W Tc | P-Channel | 12010pF @ 25V | 9.3mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 300nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfd9210pbf-datasheets-2503.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 8 Weeks | Unknown | 3Ohm | 4 | No | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 170pF | 8 ns | 12ns | 12 ns | 11 ns | 400mA | 20V | 200V | -4V | 1W Ta | 3Ohm | 200V | P-Channel | 170pF @ 25V | 3Ohm @ 240mA, 10V | 4V @ 250μA | 400mA Ta | 8.9nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ24GPBF | Vishay Siliconix | $1.55 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfiz24gpbf-datasheets-3379.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 100MOhm | 3 | No | 1 | Single | 37W | 1 | TO-220-3 | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | 60V | 60V | 4V | 37W Tc | 100mOhm | N-Channel | 640pF @ 25V | 4 V | 100mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFI630GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi630gpbf-datasheets-3961.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 800pF | 2.5kV | 9.4 ns | 28ns | 20 ns | 39 ns | 5.9A | 20V | 200V | 4V | 35W Tc | 340 ns | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 3.5A, 10V | 4V @ 250μA | 5.9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V |
