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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI7958DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7958dpt1e3-datasheets-4780.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 16.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7958 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | R-XDSO-C6 | 17 ns | 17ns | 17 ns | 66 ns | 11.3A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 3V | 40A | 61 mJ | 40V | 2 N-Channel (Dual) | 16.5m Ω @ 11.3A, 10V | 3V @ 250μA | 7.2A | 75nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612EEQ-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg612eeqt1ge4-datasheets-7492.pdf | 16-TSSOP (0.173, 4.40mm Width) | 16 | 20 Weeks | unknown | 1 | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PDSO-G16 | 1GHz | 115Ohm | 2.5Ohm | 50ns | 75ns | 3V~12V ±3V~5V | 1:1 | SPST - NO | 100pA | 3pF 3pF | 50ns, 35ns | 1.4pC | 600m Ω | -74dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ910AEP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 30V | 48W Tc | 2 N-Channel (Dual) | 1869pF @ 15V | 7mOhm @ 12A, 10V | 2.5V @ 250μA | 30A Tc | 39nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg408dye3-datasheets-7678.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | Lead Free | 500μA | 16 | 15 Weeks | 172.98879mg | 36V | 5V | 90Ohm | 16 | yes | Tin | unknown | 2 | 200μA | e3 | 600mW | GULL WING | 260 | 15V | 0.65mm | DG409 | 16 | 4 | 30 | 600mW | 2 | Not Qualified | 150 ns | 150 ns | 20V | 15V | Multiplexer | 160 ns | Dual, Single | 5V | -15V | 30mA | 8 | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 5V~36V ±5V~20V | 4:1 | SP4T | 500pA | 14pF 25pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4936ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4936adyt1e3-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 14 Weeks | 506.605978mg | 8 | No | 1.1W | SI4936 | 2 | Dual | 8-SO | 6 ns | 14ns | 5 ns | 30 ns | 4.4A | 20V | 30V | 1.1W | 36mOhm | 30V | 2 N-Channel (Dual) | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 4.4A | 20nC @ 10V | Logic Level Gate | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 20V | 1μA | 8 | 14 Weeks | 540.001716mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG419 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | 1 | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1902AEL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq1902aelt1ge3-datasheets-1477.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 430mW | 0.78A | 0.415Ohm | 15 pF | 2 N-Channel (Dual) | 75pF @ 10V | 415m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 780mA Tc | 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1413EN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | ROHS3 Compliant | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-VQFN Exposed Pad | Lead Free | 1μA | 16 | 57.09594mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | QUAD | 5V | 0.65mm | DG1413 | 1 | 210MHz | 150 ns | 120 ns | 16.5V | 15V | Dual, Single | 4.5V | -5V | 4 | 1.5Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO/NC | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4511DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4511dyt1e3-datasheets-4473.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | DUAL | GULL WING | 260 | SI4511 | 8 | 2 | 30 | 2W | 2 | Other Transistors | 9.6A | 12V | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 0.0145Ohm | N and P-Channel | 14.5m Ω @ 9.6A, 10V | 1.8V @ 250μA | 7.2A 4.6A | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 1999 | /files/vishaysiliconix-dg408dye3-datasheets-7678.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 36V | Lead Free | 500μA | 16 | 12 Weeks | 1.627801g | Unknown | 44V | 13V | 40Ohm | 16 | yes | Tin | No | 1 | 10μA | e3 | 450mW | 260 | 15V | 2.54mm | DG408 | 16 | 8 | 40 | 450mW | 1 | 150 ns | 150 ns | 20V | 15V | Multiplexer | 160 ns | Dual, Single | 5V | -15V | 30mA | 100Ohm | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6924AEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6924aedqt1e3-datasheets-4672.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1W | GULL WING | 260 | SI6924 | 8 | Dual | 40 | 1W | 2 | FET General Purpose Power | 950 ns | 1.4μs | 3.1 μs | 7 μs | 4.6A | 14V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4.1A | 0.033Ohm | 28V | 2 N-Channel (Dual) Common Drain | 33m Ω @ 4.6A, 4.5V | 1.5V @ 250μA | 4.1A | 10nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308ADY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10μA | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg309dyt1e3-datasheets-1594.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 15V | 10μA | 16 | 13 Weeks | 36V | 13V | 100Ohm | 16 | yes | No | 4 | 1nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG308 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 4 | SPST | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 100Ohm | 78 dB | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 11pF 8pF | 200ns, 150ns | -10pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4953ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4953adyt1e3-datasheets-4570.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4953 | 8 | Dual | 30 | 2W | 2 | Other Transistors | 7 ns | 10ns | 20 ns | 40 ns | -4.9A | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 3.7A | 0.053Ohm | 30V | 2 P-Channel (Dual) | -1 V | 53m Ω @ 4.9A, 10V | 1V @ 250μA (Min) | 3.7A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LEDQ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | No SVHC | 26Ohm | 16 | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 1 | NOT SPECIFIED | 4 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO/NC | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4818DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4818dyt1e3-datasheets-2252.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No | 1.25W | 1.25W | 2 | 8-SO | 5ns | 5 ns | 44 ns | 7A | 20V | 30V | 1W 1.25W | 12.5mOhm | 30V | 2 N-Channel (Dual) | 22mOhm @ 6.3A, 10V | 800mV @ 250μA (Min) | 5.3A 7A | 12nC @ 5V | Logic Level Gate | 22 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 20V | Lead Free | 1μA | 8 | 14 Weeks | 540.001716mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | 1nA | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG418 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | SPST | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 99ns | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4908DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4908dyt1e3-datasheets-4544.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | No SVHC | 8 | EAR99 | 1.85W | GULL WING | NOT SPECIFIED | SI4908 | 2 | Dual | NOT SPECIFIED | 1.85W | 2 | 74 ns | 95ns | 33 ns | 31 ns | 5A | 16V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 2.75W | 5A | 0.06Ohm | 40V | 2 N-Channel (Dual) | 355pF @ 20V | 60m Ω @ 4.1A, 10V | 2.2V @ 250μA | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | 26Ohm | 16 | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 1 | NOT SPECIFIED | 4 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4972DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4972dyt1e3-datasheets-4612.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 506.605978mg | 8 | 2.5W | SI4972 | 2 | Dual | 8-SO | 1.08nF | 108 ns | 130ns | 26 ns | 22 ns | 7.2A | 20V | 30V | 3.1W 2.5W | 26.5mOhm | 30V | 2 N-Channel (Dual) | 1080pF @ 15V | 14.5mOhm @ 6A, 10V | 3V @ 250μA | 10.8A 7.2A | 28nC @ 10V | Standard | 14.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 15V | Lead Free | 500μA | 28 | 12 Weeks | 4.190003g | 44V | 7.5V | 100Ohm | 28 | yes | No | 1 | e3 | Matte Tin (Sn) | 625mW | 15V | 2.54mm | DG406 | 28 | 16 | 625mW | 1 | 600 ns | 300 ns | 20V | Multiplexer | 350 ns | Dual, Single | 5V | -15V | 16 | 100Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | 400ns | 12V ±5V~20V | 0.02A | 16:1 | 500pA | 8pF 130pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5975DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5975dct1ge3-datasheets-2325.pdf | 8-SMD, Flat Lead | 1.1W | 1206-8 ChipFET™ | 3.1A | 12V | 1.1W | 2 P-Channel (Dual) | 86mOhm @ 3.1A, 4.5V | 450mV @ 1mA (Min) | 3.1A | 9nC @ 4.5V | Logic Level Gate | 86 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2501DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2501dbt2ge1-datasheets-8223.pdf | 16-XFBGA, WLCSP | 23 Weeks | 8Ohm | NOT SPECIFIED | NOT SPECIFIED | 4 | 550MHz | 8Ohm | 1:1 | 1.8V~5.5V | SPST - NC | 400pA | 2.9pF 2.8pF | 100ns, 60ns | -2pC | -83dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6969DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6969dqt1e3-datasheets-2341.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1.1W | SI6969 | 2 | Dual | 8-TSSOP | 25 ns | 35ns | 40 ns | 80 ns | 4.6A | 8V | 12V | 1.1W | 34mOhm | -12V | 2 P-Channel (Dual) | 34mOhm @ 4.6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | 34 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg308bdye3-datasheets-1370.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 15 Weeks | 172.98879mg | 44V | 4V | 160Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 0.65mm | DG308 | 16 | 1 | 40 | Multiplexer or Switches | +-15/12V | 4 | Not Qualified | SPST | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7980DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7980dpt1ge3-datasheets-4445.pdf | PowerPAK® SO-8 Dual | 8 | No | 21.9W | SI7980 | Dual | 3.4W | 2 | PowerPAK® SO-8 Dual | 1.01nF | 18ns | 10 ns | 25 ns | 8A | 16V | 20V | 19.8W 21.9W | 22mOhm | 2 N-Channel (Half Bridge) | 1010pF @ 10V | 22mOhm @ 5A, 10V | 2.5V @ 250μA | 8A | 27nC @ 10V | Standard | 22 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 50μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-TSSOP (0.173, 4.40mm Width) | 13 Weeks | 25V | 4.5V | 160Ohm | 16 | No | DG201 | 4 | 640mW | 4 | 16-TSSOP | SPST | 22V | Dual, Single | 4.5V | 4 | 4 | 85Ohm | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2Ohm | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ700DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz700dtt1ge3-datasheets-2485.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 2.8W | C BEND | 260 | 6 | 2 | Dual | 40 | 2.8W | 2 | FET General Purpose Power | R-XDSO-C6 | 12 ns | 8ns | 10 ns | 47 ns | 16A | 16V | SILICON | DRAIN | 20V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 2.36W 2.8W | 13.1A | 60A | 20V | 2 N-Channel (Half Bridge) | 1300pF @ 10V | 8.6m Ω @ 15A, 10V | 2.2V @ 250μA | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 10 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | e3 | Matte Tin (Sn) | 400mW | 15V | 2.54mm | DG418 | 8 | 1 | Multiplexer or Switches | 1 | SPST | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 99ns | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2343DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2343dst1ge3-datasheets-3348.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 53mOhm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | Other Transistors | Not Qualified | 10 ns | 15ns | 20 ns | 31 ns | -4A | 20V | SILICON | SWITCHING | 30V | -3V | 750mW Ta | -30V | P-Channel | 540pF @ 15V | -3 V | 53m Ω @ 4A, 10V | 3V @ 250μA | 3.1A Ta | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg413dqt1e3-datasheets-3810.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 80Ohm | 16 | yes | No | 4 | 100pA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG413 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 45Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | 5V~44V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz |
