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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DG541DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | 3.5mA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | Lead Free | 6mA | 16 | 665.986997mg | 15V | 10V | 60Ohm | 16 | yes | No | 4 | e3 | RGB, T-Switch Configuration | Matte Tin (Sn) | Video | 640mW | GULL WING | 260 | 15V | 1.27mm | DG541 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 15-3V | 70 ns | 50 ns | 15V | Dual, Single | 10V | -3V | 4 | 60Ohm | 60Ohm | 60 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4886DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4886dyt1e3-datasheets-6381.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 2.95W | 1 | FET General Purpose Powers | 14 ns | 5ns | 18 ns | 42 ns | 9.5A | 20V | SILICON | 1.56W Ta | 0.01Ohm | 30V | N-Channel | 10m Ω @ 13A, 10V | 800mV @ 250μA (Min) | 9.5A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG542DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 3.5mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 16 | 1.627801g | 18V | 10V | 60Ohm | 16 | no | No | 4 | e0 | RGB, T-Switch Configuration | Tin/Lead (Sn/Pb) | Video | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 15-3V | 100 ns | 60 ns | 15V | 12V | Dual, Single | 10V | 4 | 60Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5913DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5913dct1e3-datasheets-6447.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 1 | Other Transistors | 18 ns | 40ns | 40 ns | 18 ns | 3.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 1.7W Ta 3.1W Tc | 4A | -20V | P-Channel | 330pF @ 10V | 84m Ω @ 3.7A, 10V | 1.5V @ 250μA | 4A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ912BEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqj912bept1ge3-datasheets-0855.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 40V | 48W Tc | 9mOhm | 2 N-Channel (Dual) | 3000pF @ 25V | 11mOhm @ 9A, 10V | 2V @ 250μA | 30A Tc | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7358ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7358adpt1e3-datasheets-6483.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 4.2mOhm | 1 | Single | PowerPAK® SO-8 | 4.65nF | 21 ns | 10ns | 27 ns | 83 ns | 14A | 20V | 30V | 1.9W Ta | 4.2mOhm | N-Channel | 4650pF @ 15V | 4.2mOhm @ 23A, 10V | 3V @ 250μA | 14A Ta | 40nC @ 4.5V | 4.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7236DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7236dpt1ge3-datasheets-1565.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 15 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 46W | C BEND | 260 | SI7236 | 8 | Dual | 30 | 3.5W | 2 | FET General Purpose Power | R-XDSO-C6 | 10 ns | 15ns | 10 ns | 60 ns | 20.7A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 60A | 20V | 2 N-Channel (Dual) | 4000pF @ 10V | 5.2m Ω @ 20.7A, 4.5V | 1.5V @ 250μA | 60A | 105nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5475DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5475dct1e3-datasheets-6481.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 31mOhm | 8 | 1 | Single | 1206-8 ChipFET™ | 15 ns | 20ns | 80 ns | 122 ns | 5.5A | 8V | 12V | 1.3W Ta | 31mOhm | P-Channel | 31mOhm @ 5.5A, 4.5V | 450mV @ 1mA (Min) | 5.5A Ta | 29nC @ 4.5V | 31 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ980EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjq980elt1ge3-datasheets-2325.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | unknown | 2 | 187W | 175°C | 10 ns | 21 ns | 36A | 20V | 80V | 2 N-Channel (Dual) | 1995pF @ 40V | 13.5m Ω @ 5A, 10V | 2.5V @ 250μA | 36A Tc | 36nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7380ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7380adpt1e3-datasheets-6567.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 8 | 506.605978mg | Unknown | 3mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | 17 ns | 13ns | 35 ns | 155 ns | 40A | 12V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 70A | 30V | N-Channel | 7785pF @ 15V | 600 mV | 3m Ω @ 20A, 10V | 1.6V @ 250μA | 40A Tc | 185nC @ 10V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA519EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia519edjt1ge3-datasheets-4324.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 40MOhm | 6 | EAR99 | Tin | No | e3 | 7.8W | 260 | SIA519 | 6 | 40 | 1.9W | 2 | Other Transistors | 4.5A | 12V | SILICON | DRAIN | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 20V | N and P-Channel | 350pF @ 10V | 40m Ω @ 4.2A, 4.5V | 1.4V @ 250μA | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7445DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7445dpt1ge3-datasheets-6617.pdf | PowerPAK® 1212-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8 | 1 | Single | PowerPAK® 1212-8 | 40 ns | 45ns | 190 ns | 400 ns | -12A | 8V | 20V | 1.9W Ta | 7.7mOhm | P-Channel | -1 V | 7.7mOhm @ 19A, 4.5V | 1V @ 250μA | 12A Ta | 140nC @ 5V | 7.7 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4948BEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4948beyt1ge3-datasheets-1222.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 120mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.4W | GULL WING | 260 | SI4948 | 8 | 2 | Dual | 30 | 1.4W | 2 | 10 ns | 15ns | 15 ns | 50 ns | -3.1A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | 2 P-Channel (Dual) | -3 V | 120m Ω @ 3.1A, 10V | 3V @ 250μA | 2.4A | 22nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7404DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7404dnt1e3-datasheets-6658.pdf | PowerPAK® 1212-8 | 3.1496mm | 1.0668mm | 3.1496mm | Lead Free | 5 | 13mOhm | 8 | yes | EAR99 | FAST SWITCHING | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | FET General Purpose Power | Not Qualified | S-XDSO-C5 | 27 ns | 39ns | 39 ns | 64 ns | 8.5A | 12V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 40A | 30V | N-Channel | 13m Ω @ 13.3A, 10V | 1.5V @ 250μA | 8.5A Ta | 30nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6954ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si6954adqt1e3-datasheets-6320.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 53mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 830mW | GULL WING | 260 | SI6954 | 8 | 2 | Dual | 40 | 830mW | 2 | 12 ns | 10ns | 10 ns | 23 ns | 3.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 3.1A | 30V | 2 N-Channel (Dual) | 1 V | 53m Ω @ 3.4A, 10V | 1V @ 250μA (Min) | 3.1A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7457DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7457dpt1e3-datasheets-6639.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | R-PDSO-C5 | 60 ns | 7.9A | 20V | SILICON | DRAIN | 100V | 5.2W Ta 83.3W Tc | 28A | 35A | 0.042Ohm | 80 mJ | -100V | P-Channel | 5230pF @ 50V | 42m Ω @ 7.9A, 10V | 4V @ 250μA | 28A Tc | 160nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ320DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-siz320dtt1ge3-datasheets-7454.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 16.7W 31W | 25V | 2 N-Channel (Dual) | 660pF @ 12.5V 1370pF @ 12.5V | 8.3m Ω @ 8A, 10V, 4.24m Ω @ 10A, 10V | 2.4V @ 250μA | 30A Tc 40A Tc | 8.9nC @ 4.5V, 11.9nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1403CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1403cdlt1ge3-datasheets-1941.pdf | 6-TSSOP, SC-88, SOT-363 | 2.05mm | 900μm | 1.25mm | Lead Free | 6 | 7.512624mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 6 | 1 | 600mW | 1 | Other Transistors | 18 ns | 26ns | 18 ns | 30 ns | 2.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600mV | 600mW Ta 900mW Tc | 20V | P-Channel | 281pF @ 10V | 140m Ω @ 1.6A, 4.5V | 1.5V @ 250μA | 2.1A Tc | 8nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7956DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7956dpt1e3-datasheets-2416.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 1.4W | C BEND | 260 | SI7956 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 13 ns | 36ns | 50 ns | 18 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 150V | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 150V | 2 N-Channel (Dual) | 105m Ω @ 4.1A, 10V | 4V @ 250μA | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1426DH-T1-GE3 | Vishay Siliconix | $0.06 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1426dht1e3-datasheets-7955.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | Single | 30 | 1W | 1 | FET General Purpose Power | 10 ns | 12ns | 9 ns | 15 ns | 2.8A | 20V | SILICON | SWITCHING | 1W Ta | 0.075Ohm | 30V | N-Channel | 75m Ω @ 3.6A, 10V | 2.5V @ 250μA | 2.8A Ta | 3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ988DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-siz988dtt1ge3-datasheets-0357.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® | 30V | 20.2W 40W | 2 N-Channel (Dual) | 1000pF @ 15V 2425pF @ 15V | 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 40A Tc 60A Tc | 10.5nC @ 4.5V, 23.1nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5913DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5913dct1e3-datasheets-6447.pdf | 8-SMD, Flat Lead | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | Other Transistors | Not Qualified | 18 ns | 40ns | 10 ns | 18 ns | 3.7A | 12V | SILICON | SWITCHING | 20V | 1.7W Ta 3.1W Tc | 4A | -20V | P-Channel | 330pF @ 10V | 84m Ω @ 3.7A, 10V | 1.5V @ 250μA | 4A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4200DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4200dyt1ge3-datasheets-0744.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | 8 | 2 | Dual | 30 | 2W | 2 | 10ns | 8 ns | 7.3A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.8W | 8A | 25V | 2 N-Channel (Dual) | 415pF @ 13V | 25m Ω @ 7.3A, 10V | 2.2V @ 250μA | 8A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA406DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sia406djt1ge3-datasheets-2428.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 13 Weeks | Unknown | 19.8mOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-XDSO-N3 | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | 1V | 3.5W Ta 19W Tc | 20A | N-Channel | 1380pF @ 6V | 19.8m Ω @ 10.8A, 4.5V | 1V @ 250μA | 4.5A Tc | 23nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB900EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sib900edkt1ge3-datasheets-3733.pdf | PowerPAK® SC-75-6L Dual | 6 | 6 | yes | EAR99 | ESD PROTECTION | No | 3.1W | 260 | SIB900 | 6 | 40 | 2 | FET General Purpose Powers | 20 ns | 12ns | 12 ns | 70 ns | 1.5A | 6V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.225Ohm | 2 N-Channel (Dual) | 225m Ω @ 1.6A, 4.5V | 1V @ 250μA | 1.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS452DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis452dnt1ge3-datasheets-2639.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 20 ns | 12ns | 10 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.8W Ta 52W Tc | 45 mJ | 12V | N-Channel | 1700pF @ 6V | 3.25m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA910EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia910edjt1ge3-datasheets-4467.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 28MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7.8W | 260 | SIA910E | 6 | 2 | Dual | 40 | 1.9W | 2 | FET General Purpose Powers | 10 ns | 12ns | 12 ns | 25 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 12V | 2 N-Channel (Dual) | 455pF @ 6V | 400 mV | 28m Ω @ 5.2A, 4.5V | 1V @ 250μA | 16nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE844DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie844dft1e3-datasheets-3152.pdf | 10-PolarPAK® (U) | 4 | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 10ns | 10 ns | 25 ns | 20.3A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 25W Tc | 44.5A | 60A | 0.007Ohm | 31 mJ | 30V | N-Channel | 2150pF @ 15V | 7m Ω @ 12.1A, 10V | 3V @ 250μA | 44.5A Tc | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5908DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si5908dct1e3-datasheets-5599.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | C BEND | 260 | SI5908 | 8 | Dual | 40 | 1.1W | 2 | FET General Purpose Powers | 20 ns | 36ns | 36 ns | 30 ns | 5.9A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 4.4A | 0.04Ohm | 20V | 2 N-Channel (Dual) | 40m Ω @ 4.4A, 4.5V | 1V @ 250μA | 4.4A | 7.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR432DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir432dpt1ge3-datasheets-3206.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 5W Ta 54W Tc | 8.6A | 40A | 0.0306Ohm | 14.5 mJ | N-Channel | 1170pF @ 50V | 30.6m Ω @ 8.6A, 10V | 4V @ 250μA | 28.4A Tc | 32nC @ 10V | 7.5V 10V | ±20V |
