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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTQ40N50L2 | IXYS | $18.42 |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt40n50l2-datasheets-2083.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | No SVHC | 170mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 540W | 1 | FET General Purpose Powers | Not Qualified | 40A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 540W Tc | 80A | 2000 mJ | N-Channel | 10400pF @ 25V | 2.5 V | 170m Ω @ 20A, 10V | 4.5V @ 250μA | 40A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFN70N120SK | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn70n120sk-datasheets-7216.pdf | SOT-227-4, miniBLOC | 28 Weeks | 1200V | N-Channel | 2790pF @ 1000V | 34m Ω @ 50A, 20V | 4V @ 15mA | 68A Tc | 161nC @ 20V | 20V | +20V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH76N07-12 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh76n0712-datasheets-1335.pdf | 70V | 76A | TO-247-3 | Lead Free | 3 | 8 Weeks | 12MOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 70ns | 55 ns | 130 ns | 76A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 2000 mJ | 70V | N-Channel | 4400pF @ 25V | 12m Ω @ 40A, 10V | 3.4V @ 4mA | 76A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFQ50N60P3 | IXYS | $8.39 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | Lead Free | 3 | 26 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTA32P05T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 50V | 83W Tc | P-Channel | 1975pF @ 25V | 39m Ω @ 16A, 10V | 4.5V @ 250μA | 32A Tc | 46nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY24N15T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24A | 150V | N-Channel | 24A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP450P2 | IXYS | $14.98 |
Min: 1 Mult: 1 |
download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth450p2-datasheets-0479.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 750 mJ | 500V | N-Channel | 2530pF @ 25V | 330m Ω @ 8A, 10V | 4.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTT440N055T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt440n055t2-datasheets-3581.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 440A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1000W Tc | 1200A | 0.0018Ohm | 1500 mJ | N-Channel | 25000pF @ 25V | 1.8m Ω @ 100A, 10V | 4V @ 250μA | 440A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFK80N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n50q3-datasheets-3668.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 30 ns | 250ns | 43 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 240A | 0.065Ohm | 500V | N-Channel | 10000pF @ 25V | 65m Ω @ 40A, 10V | 6.5V @ 8mA | 80A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFK32N80Q3 | IXYS | $22.87 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n80q3-datasheets-3738.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1kW | 1 | FET General Purpose Power | 38 ns | 300ns | 45 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 80A | 0.27Ohm | 800V | N-Channel | 6940pF @ 25V | 270m Ω @ 16A, 10V | 6.5V @ 4mA | 32A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTA90N20X3 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12m Ω @ 45A, 10V | 4.5V @ 250μA | 90A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH110N15T2 | IXYS | $2.64 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh110n15t2-datasheets-3838.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-T3 | 16ns | 18 ns | 33 ns | 110A | SILICON | DRAIN | SWITCHING | 150V | 150V | 480W Tc | TO-247AD | 300A | 0.013Ohm | 800 mJ | N-Channel | 8600pF @ 25V | 13m Ω @ 500mA, 10V | 4.5V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXKC20N60C | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkc20n60c-datasheets-3872.pdf | ISOPLUS220™ | 3 | 75 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 5ns | 4.5 ns | 67 ns | 15A | 20V | SILICON | ISOLATED | SWITCHING | 14A | 0.19Ohm | 690 mJ | 600V | N-Channel | 2400pF @ 25V | 190m Ω @ 16A, 10V | 3.9V @ 1mA | 15A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTQ30N60P | IXYS | $4.77 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n60p-datasheets-1373.pdf | 600V | 30A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 5050pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTT16P20 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16A | 200V | P-Channel | 16A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT170N10P-TR | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 100V | 715W Tc | N-Channel | 6000pF @ 25V | 9m Ω @ 85A, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ21N50Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 21A | 500V | N-Channel | 21A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTJ4N150 | IXYS | $9.10 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtj4n150-datasheets-4084.pdf | TO-247-3 | 3 | 24 Weeks | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 1 | FET General Purpose Power | R-PSFM-T3 | 2.5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1500V | 1500V | 110W Tc | 12A | 6Ohm | 350 mJ | N-Channel | 1576pF @ 25V | 6 Ω @ 2A, 10V | 5V @ 250μA | 2.5A Tc | 44.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFJ20N85X | IXYS | $10.60 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixfj20n85x-datasheets-4143.pdf | TO-247-3 | 19 Weeks | yes | 850V | 110W Tc | N-Channel | 1660pF @ 25V | 360m Ω @ 10A, 10V | 5.5V @ 2.5mA | 9.5A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK24N80P | IXYS | $60.14 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n80p-datasheets-4174.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 24 ns | 75 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 650W Tc | 55A | 0.4Ohm | 1500 mJ | 800V | N-Channel | 7200pF @ 25V | 400m Ω @ 12A, 10V | 5V @ 4mA | 24A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFX360N10T | IXYS | $11.25 |
Min: 1 Mult: 1 |
download | GigaMOS™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk360n10t-datasheets-7419.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 360A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1250W Tc | 900A | 0.0029Ohm | 3000 mJ | N-Channel | 33000pF @ 25V | 2.9m Ω @ 100A, 10V | 5V @ 3mA | 360A Tc | 525nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFT18N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n90p-datasheets-7103.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 36A | 0.6Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 600m Ω @ 500mA, 10V | 6.5V @ 1mA | 18A Tc | 97nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFH150N15P | IXYS | $7.25 |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n15p-datasheets-4247.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | R-PSFM-T3 | 33ns | 28 ns | 100 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | TO-247AD | 340A | 0.013Ohm | 2500 mJ | 150V | N-Channel | 5800pF @ 25V | 13m Ω @ 500mA, 10V | 5V @ 4mA | 150A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFT24N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfh24n50-datasheets-4823.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 30 ns | 65 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 96A | 0.23Ohm | 500V | N-Channel | 4200pF @ 25V | 230m Ω @ 12A, 10V | 4V @ 4mA | 24A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTT75N20L2 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | D2PAK | 30 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX520N075T2 | IXYS | $13.63 |
Min: 1 Mult: 1 |
download | GigaMOS™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfk520n075t2-datasheets-5624.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 1.25kW | 1 | FET General Purpose Power | 520A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1250W Tc | 0.0022Ohm | N-Channel | 41000pF @ 25V | 2.2m Ω @ 100A, 10V | 5V @ 8mA | 520A Tc | 545nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFK102N30P | IXYS | $15.64 |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk102n30p-datasheets-4426.pdf | TO-264-3, TO-264AA | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | Not Qualified | R-PSFM-T3 | 28ns | 30 ns | 130 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 700W Tc | 250A | 0.033Ohm | 2500 mJ | 300V | N-Channel | 7500pF @ 25V | 33m Ω @ 500mA, 10V | 5V @ 4mA | 102A Tc | 224nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTT10N100D | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d-datasheets-4365.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 85ns | 75 ns | 110 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 400W Tc | 20A | 1kV | N-Channel | 2500pF @ 25V | 1.4 Ω @ 10A, 10V | 3.5V @ 250μA | 10A Tc | 130nC @ 10V | Depletion Mode | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTT72N20 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth72n20-datasheets-4294.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 20 ns | 80 ns | 72A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 288A | 0.033Ohm | 1500 mJ | 200V | N-Channel | 4400pF @ 25V | 33m Ω @ 500mA, 10V | 4V @ 250μA | 72A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH67N10 | IXYS | $82.50 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh67n10-datasheets-7587.pdf | 100V | 67A | TO-247-3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 60ns | 60 ns | 80 ns | 67A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 268A | 0.025Ohm | 100V | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V |
