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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTN32P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtn32p60p-datasheets-0963.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 27ns | 33 ns | 95 ns | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 96A | 0.35Ohm | 3500 mJ | 600V | P-Channel | 11100pF @ 25V | 350m Ω @ 500mA, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| MKE38P600LB-TRR | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-mke38p600tlbtrr-datasheets-0392.pdf | 9-SMD Module | yes | 50A | 600V | N-Channel | 50A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT1N250HV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 2500V | 250W Tc | N-Channel | 1660pF @ 25V | 40 Ω @ 750mA, 10V | 4V @ 250μA | 1.5A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK20N150 | IXYS | $21.46 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtx20n150-datasheets-3657.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | AVALANCHE RATED | unknown | SINGLE | 1 | FET General Purpose Power | R-PSFM-T3 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 1250W Tc | 50A | 1Ohm | 2500 mJ | N-Channel | 7800pF @ 25V | 1 Ω @ 10A, 10V | 4.5V @ 1mA | 20A Tc | 215nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFE44N50QD2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 39A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFN72N55Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn72n55q2-datasheets-1152.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | Not Qualified | 23ns | 10 ns | 58 ns | 72A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 288A | 0.072Ohm | 5000 mJ | 550V | N-Channel | 10500pF @ 25V | 72m Ω @ 500mA, 10V | 5V @ 8mA | 72A Tc | 258nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFN30N120P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn30n120p-datasheets-1204.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 60ns | 56 ns | 95 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 890W Tc | 75A | 0.35Ohm | 2000 mJ | 1.2kV | N-Channel | 19000pF @ 25V | 350m Ω @ 500mA, 10V | 6.5V @ 1mA | 30A Tc | 310nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFN24N90Q | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PUFM-X4 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | 900V | 900V | 500W Tc | 0.45Ohm | N-Channel | 24A Tc | ||||||||||||||||||||||||||||||||||||||||||||
| IXTA62N15P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 150V | 350W Tc | N-Channel | 2250pF @ 25V | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 62A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU08N100P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 8A | 1000V | N-Channel | 8A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY15P15T | IXYS | $3.18 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty15p15t-datasheets-2144.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | SINGLE | GULL WING | 4 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | 45A | 0.24Ohm | 300 mJ | P-Channel | 3650pF @ 25V | 240m Ω @ 7A, 10V | 4.5V @ 250μA | 15A Tc | 48nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||
| IXFA130N10T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 100V | 360W Tc | N-Channel | 6600pF @ 25V | 10.1m Ω @ 65A, 10V | 4.5V @ 1mA | 130A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY10P15T | IXYS | $3.06 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp10p15t-datasheets-2123.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 4 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 83W Tc | TO-252AA | 30A | 0.35Ohm | 200 mJ | P-Channel | 2210pF @ 25V | 350m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||
| IXFA8N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 650V | 150W Ta | N-Channel | 790pF @ 25V | 450m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP130N10T | IXYS | $13.28 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n10t-datasheets-9422.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 360W Tc | TO-220AB | 350A | 0.0091Ohm | 750 mJ | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 1mA | 130A Tc | 104nC @ 10V | 10V | ||||||||||||||||||||||||||
| IXTU5N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | AVALANCHE RATED | THROUGH-HOLE | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | 89W Tc | TO-251 | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTP08N100P | IXYS | $2.41 |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty08n100p-datasheets-5188.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 37ns | 34 ns | 35 ns | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 42W Tc | TO-220AB | 0.8A | 1.8A | 80 mJ | 1kV | N-Channel | 240pF @ 25V | 20 Ω @ 500mA, 10V | 4V @ 50μA | 800mA Tc | 11.3nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXTA3N50D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 500V | 125W Tc | N-Channel | 1070pF @ 25V | 1.5 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 40nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR40N50Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfr40n50q2-datasheets-7894.pdf | 500V | 29A | ISOPLUS247™ | Lead Free | 3 | 170MOhm | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 320W | 1 | FET General Purpose Power | Not Qualified | 13ns | 8 ns | 42 ns | 29A | 30V | SILICON | ISOLATED | SWITCHING | 320W Tc | 160A | 2500 mJ | 500V | N-Channel | 4200pF @ 25V | 170m Ω @ 20A, 10V | 5V @ 4mA | 29A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTV22N50PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq22n50p-datasheets-2023.pdf | 500V | 22A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 50A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTP7N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp7n60p-datasheets-5865.pdf | 600V | 7A | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 20 ns | 27ns | 26 ns | 65 ns | 7A | 30V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 7A | 14A | 400 mJ | 600V | N-Channel | 1080pF @ 25V | 1.1 Ω @ 3.5A, 10V | 5.5V @ 100μA | 7A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||
| IXFC30N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr30n60p-datasheets-4214.pdf | 600V | 30A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 20ns | 25 ns | 75 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 80A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 3820pF @ 25V | 250m Ω @ 15A, 10V | 5V @ 4mA | 15A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXFV22N50PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n50p-datasheets-1343.pdf | 500V | 22A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 21 ns | 72 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 55A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 2.5mA | 22A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFT26N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft26n60q-datasheets-7390.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 250mOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 32ns | 16 ns | 80 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 104A | 1500 mJ | 600V | N-Channel | 5100pF @ 25V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXTA152N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta152n085t-datasheets-7446.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 50ns | 45 ns | 50 ns | 152A | SILICON | DRAIN | SWITCHING | 360W Tc | 410A | 0.007Ohm | 750 mJ | 85V | N-Channel | 5500pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 152A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXFP5N50PM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n50pm-datasheets-7491.pdf | TO-220-3 | 3 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 38W | 1 | Not Qualified | R-PSFM-T3 | 28ns | 26 ns | 65 ns | 3.2A | 30V | SILICON | ISOLATED | SWITCHING | 38W Tc | TO-220AB | 10A | 150 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.5A, 10V | 5.5V @ 500μA | 3.2A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTA200N075T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n075t7-datasheets-7526.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-G6 | 57ns | 52 ns | 54 ns | 200A | SILICON | DRAIN | SWITCHING | 430W Tc | 540A | 0.005Ohm | 500 mJ | 75V | N-Channel | 6800pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXTH152N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth152n085t-datasheets-7560.pdf | TO-247-3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 50ns | 45 ns | 50 ns | 152A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 410A | 0.007Ohm | 750 mJ | 85V | N-Channel | 5500pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 152A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTP220N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp220n075t-datasheets-9400.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-T3 | 65ns | 47 ns | 55 ns | 220A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-220AB | 130A | 350A | 0.0085Ohm | 750 mJ | 75V | N-Channel | 7700pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTP76N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp76n075t-datasheets-7635.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 176W | 1 | Not Qualified | R-PSFM-T3 | 40ns | 33 ns | 38 ns | 76A | SILICON | DRAIN | SWITCHING | 176W Tc | TO-220AB | 210A | 0.012Ohm | 500 mJ | 75V | N-Channel | 2580pF @ 25V | 12m Ω @ 25A, 10V | 4V @ 50μA | 76A Tc | 57nC @ 10V | 10V | ±20V |
