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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTK200N10P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk200n10p-datasheets-7141.pdf | TO-264-3, TO-264AA | Lead Free | 28 Weeks | No SVHC | 3 | Single | 800W | TO-264 (IXTK) | 7.6nF | 35ns | 90 ns | 150 ns | 200A | 20V | 100V | 5V | 800W Tc | 7.5mOhm | 100V | N-Channel | 7600pF @ 25V | 7.5mOhm @ 100A, 10V | 5V @ 500μA | 200A Tc | 240nC @ 10V | 7.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP4N70X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n70x2m-datasheets-0341.pdf | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | compliant | 700V | 30W Tc | N-Channel | 386pF @ 25V | 850m Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 11.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB132N50P3 | IXYS | $20.22 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb132n50p3-datasheets-1416.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | No SVHC | 264 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 1.89kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 44 ns | 9ns | 8 ns | 72 ns | 132A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1890W Tc | 330A | 0.039Ohm | 3000 mJ | 500V | N-Channel | 18600pF @ 25V | 39m Ω @ 66A, 10V | 5V @ 8mA | 132A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFH14N85X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfp14n85x-datasheets-4389.pdf | TO-247-3 | 19 Weeks | yes | 850V | 460W Tc | N-Channel | 1043pF @ 25V | 550m Ω @ 500mA, 10V | 5.5V @ 1mA | 14A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA100N04T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 40V | 150W Tc | N-Channel | 2690pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 100A Tc | 25.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY44N10T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 100V | 130W Tc | N-Channel | 1262pF @ 25V | 30m Ω @ 22A, 10V | 4.5V @ 25μA | 44A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA460P2 | IXYS |
Min: 1 Mult: 1 |
download | PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtq460p2-datasheets-2745.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 480W Tc | 50A | 0.27Ohm | 750 mJ | N-Channel | 2890pF @ 25V | 270m Ω @ 12A, 10V | 4.5V @ 250μA | 24A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFH30N50Q3 | IXYS | $11.38 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n50q3-datasheets-3628.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | 14 ns | 250ns | 26 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | TO-247AD | 90A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3200pF @ 25V | 200m Ω @ 15A, 10V | 6.5V @ 4mA | 30A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTK140N30P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | TO-264-3, TO-264AA | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.04kW | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 140A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 0.024Ohm | 5000 mJ | N-Channel | 14800pF @ 25V | 24m Ω @ 70A, 10V | 5V @ 500μA | 140A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFR64N60Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n60q3-datasheets-3760.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 568W | 1 | FET General Purpose Power | R-PSIP-T3 | 45 ns | 300ns | 50 ns | 42A | 30V | SILICON | ISOLATED | SWITCHING | 568W Tc | 250A | 0.104Ohm | 3000 mJ | 600V | N-Channel | 9930pF @ 25V | 104m Ω @ 32A, 10V | 6.5V @ 4mA | 42A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTH32N65X | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth32n65x-datasheets-3818.pdf | TO-247-3 | 15 Weeks | 32A | 650V | 500W Tc | N-Channel | 2205pF @ 25V | 135m Ω @ 16A, 10V | 5.5V @ 250μA | 32A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N60P3-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 600V | 1.04kW Tc | N-Channel | 6300pF @ 25V | 145m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT26N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt26n50p-datasheets-3884.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 78A | 0.23Ohm | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTP3N110 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n110-datasheets-3916.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSFM-T3 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 150W Tc | TO-220AB | 3A | 12A | 4Ohm | 700 mJ | 1.1kV | N-Channel | 1350pF @ 25V | 4 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTH36P15P | IXYS | $30.85 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp36p15p-datasheets-7043.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 36A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | 90A | 0.11Ohm | 1500 mJ | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFH8N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/ixys-ixfh9n80-datasheets-3591.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 15ns | 35 ns | 70 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 8A | 800V | N-Channel | 2600pF @ 25V | 210ns | 1.1 Ω @ 4A, 10V | 4.5V @ 2.5mA | 8A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFH130N15X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n15x3-datasheets-3968.pdf | TO-247-3 | 19 Weeks | compliant | 150V | 390W Tc | N-Channel | 5230pF @ 25V | 9m Ω @ 65A, 10V | 4.5V @ 1.5mA | 130A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA30N25L2 | IXYS | $9.64 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | compliant | 250V | 355W Tc | N-Channel | 3200pF @ 25V | 140m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT60N50P3 | IXYS | $50.14 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n50p3-datasheets-1724.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18 ns | 16ns | 8 ns | 37 ns | 60A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 150A | 0.1Ohm | 1000 mJ | 500V | N-Channel | 6250pF @ 25V | 100m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTH6N90A | IXYS | $1.80 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth6n90-datasheets-4158.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 40ns | 60 ns | 100 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AD | 6A | 24A | 900V | N-Channel | 2600pF @ 25V | 1.4 Ω @ 3A, 10V | 4.5V @ 250μA | 6A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFR16N80P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX140N25T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk140n25t-datasheets-4863.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 960W Tc | 380A | 0.017Ohm | 3000 mJ | N-Channel | 19000pF @ 25V | 17m Ω @ 60A, 10V | 5V @ 4mA | 140A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFX200N10P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk200n10p-datasheets-7092.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | 35ns | 90 ns | 150 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 830W Tc | 400A | 0.0075Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 7.5m Ω @ 100A, 10V | 5V @ 8mA | 200A Tc | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFT13N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft13n80q-datasheets-4344.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 36ns | 19 ns | 55 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | 52A | 0.8Ohm | 750 mJ | 800V | N-Channel | 3250pF @ 25V | 700m Ω @ 6.5A, 10V | 4.5V @ 4mA | 13A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFR20N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr20n100p-datasheets-4372.pdf | ISOPLUS247™ | 3 | 26 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | Not Qualified | 37ns | 45 ns | 56 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 230W Tc | 50A | 0.64Ohm | 500 mJ | 1kV | N-Channel | 7300pF @ 25V | 640m Ω @ 10A, 10V | 6.5V @ 1mA | 11A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFX80N60P3 | IXYS | $17.55 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n60p3-datasheets-9089.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 48 ns | 25ns | 8 ns | 87 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1300W Tc | 200A | 0.07Ohm | 2000 mJ | 600V | N-Channel | 13100pF @ 25V | 70m Ω @ 500mA, 10V | 5V @ 8mA | 80A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTK75N30 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk75n30-datasheets-4442.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 25ns | 20 ns | 88 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 540W Tc | 0.042Ohm | 2500 mJ | 300V | N-Channel | 6000pF @ 25V | 42m Ω @ 500mA, 10V | 4V @ 250μA | 75A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFK80N15Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n15q-datasheets-4484.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 55ns | 20 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.0225Ohm | 1500 mJ | 150V | N-Channel | 4500pF @ 25V | 22.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| VMO550-01F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-vmo55001f-datasheets-4575.pdf | Y3-DCB | 4 | 4 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | NOT SPECIFIED | 2.2kW | 1 | FET General Purpose Power | Not Qualified | 500ns | 200 ns | 800 ns | 590A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2200W Tc | 2360A | 0.0021Ohm | 100V | N-Channel | 50000pF @ 25V | 2.1m Ω @ 500mA, 10V | 6V @ 110mA | 590A Tc | 2000nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFN150N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n10-datasheets-7652.pdf | 100V | 150A | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 12mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 60 ns | 100 ns | 150A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 560A | 100V | N-Channel | 9000pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V |
