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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Applications | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | RMS Current (Irms) | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Leakage Current (Max) | Threshold Voltage | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Collector Emitter Voltage (VCEO) | Max Collector Current | Non-Repetitive Pk On-state Cur | Trigger Device Type | Utilized IC / Part | Repetitive Peak Off-state Voltage | Voltage - Clamping | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Thermal Resistance @ Natural | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - On State (It (AV)) (Max) | Critical Rate of Rise of Off-State Voltage-Min | Circuit Commutated Turn-off Time-Nom | Desc. of Quick-Connects | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Desc. of Screw Terminals | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Capacitance - Input | ECCN (US) | Minimum Operating Temperature (°C) | Maximum Operating Temperature (°C) | Standard Package Name | Supplier Package | Mounting | Package Height | Package Length | Package Width | PCB changed | Lead Shape | Maximum Power Dissipation (mW) | Military | Peak Reverse Repetitive Voltage (V) | Maximum Continuous Forward Current (A) | Peak Non-Repetitive Surge Current (A) | Peak Forward Voltage (V) | Peak Reverse Current (uA) | Peak Reverse Recovery Time (ns) | Tab | AEC Qualified |
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| IXFE80N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe80n50-datasheets-8957.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 580W | 1 | FET General Purpose Power | Not Qualified | 70ns | 27 ns | 102 ns | 72A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 580W Tc | 320A | 0.055Ohm | 6000 mJ | 500V | N-Channel | 9890pF @ 25V | 55m Ω @ 40A, 10V | 4.5V @ 8mA | 72A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV102N20T | IXYS |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv102n20t-datasheets-0961.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 750W | 1 | Not Qualified | 26ns | 25 ns | 50 ns | 102A | 30V | SILICON | DRAIN | SWITCHING | 750W Tc | 250A | 1200 mJ | 200V | N-Channel | 6800pF @ 25V | 23m Ω @ 500mA, 10V | 4.5V @ 1mA | 102A Tc | 114nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC10N80P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | ISOPLUS220™ | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 100W | NOT SPECIFIED | 3 | 150°C | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSIP-T3 | 5A | SILICON | ISOLATED | SWITCHING | 5A | 1.2Ohm | 750 mJ | 800V | N-Channel | 5A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMD80-0045PS | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fmd800045ps-datasheets-4339.pdf | i4-Pac™-5 | 5 | 5 | EAR99 | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | Not Qualified | 150A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 0.0049Ohm | N-Channel | 4.9m Ω @ 110A, 10V | 4V @ 1mA | 150A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N80 | IXYS | $31.19 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n80-datasheets-4415.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 36mg | No SVHC | 165mOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 48ns | 24 ns | 100 ns | 44A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4.5V | 700W Tc | 250 ns | 176A | 4000 mJ | 800V | N-Channel | 10000pF @ 25V | 4.5 V | 165m Ω @ 500mA, 10V | 4.5V @ 8mA | 44A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF1N400 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtf1n400-datasheets-1240.pdf | i4-Pac™-5 (3 Leads) | 3 | 3 | yes | EAR99 | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 1A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4000V | 4000V | 160W Tc | 1A | 3A | N-Channel | 2530pF @ 25V | 60 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC24N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfc26n50-datasheets-8452.pdf | ISOPLUS220™ | 3 | yes | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 230W Tc | 21A | 84A | 0.23Ohm | N-Channel | 4200pF @ 25V | 230m Ω @ 10.5A, 10V | 4V @ 4mA | 21A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD15N100-8X | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT26N50Q TR | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft26n50qtr-datasheets-3315.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 500V | 300W Tc | N-Channel | 3900pF @ 25V | 200m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCB60I1200TZ | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-mcb60i1200tz-datasheets-4574.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM67N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfh75n10-datasheets-2049.pdf | TO-204AE | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 67A | 268A | 0.025Ohm | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTD4N80P-3J | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | 800V | 100W Tc | N-Channel | 750pF @ 25V | 3.4 Ω @ 1.8A, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI430YI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDI430YI | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDD404 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdi404-datasheets-5921.pdf | Lead Free | Yes | FET Driver (External FET) | IX DD404 DVR | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT20P50P | IXYS | $10.99 |
Min: 1 Mult: 1 |
download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth20p50p-datasheets-2496.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 460W Tc | 60A | 0.45Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 450m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK110N20L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx110n20l2-datasheets-3655.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 960W | 1 | FET General Purpose Power | R-PSFM-T3 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 960W Tc | 275A | 0.024Ohm | 5000 mJ | N-Channel | 23000pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 110A Tc | 500nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP3N120 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfp3n120-datasheets-2262.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | No SVHC | 4.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 5V | 200W Tc | TO-220AB | 3A | 700 mJ | 1.2kV | N-Channel | 1050pF @ 25V | 4.5 Ω @ 500mA, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX32N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n100p-datasheets-0781.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 55ns | 43 ns | 76 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 960W Tc | 75A | 1500 mJ | 1kV | N-Channel | 14200pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTB62N50L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtb62n50l-datasheets-2538.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 100mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 800W | 1 | FET General Purpose Power | Not Qualified | 85ns | 75 ns | 110 ns | 62A | 30V | SILICON | DRAIN | SWITCHING | 800W Tc | 150A | 5000 mJ | 500V | N-Channel | 11500pF @ 25V | 100m Ω @ 31A, 20V | 5.5V @ 250μA | 62A Tc | 550nC @ 20V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX90P20P | IXYS | $34.41 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtk90p20p-datasheets-2159.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 890W | 1 | Other Transistors | Not Qualified | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 890W Tc | 270A | 0.044Ohm | P-Channel | 12000pF @ 25V | 44m Ω @ 22A, 10V | 4V @ 1mA | 90A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA15IM200UC | IXYS | $5.09 |
Min: 1 Mult: 1 |
Surface Mount | Tape & Reel (TR) | SCHOTTKY | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsa15im200uc-datasheets-2004.pdf | TO-252-3 | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | -55°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | SOFT RECOVERY | SILICON | TO-252AA | 0.78V | RECTIFIER DIODE | 200V | 15A | 80A | 1 | 2 °C/W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MKE38RK600DFELB-TRR | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | SMD/SMT | 9 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | DUAL | GULL WING | 9 | 1 | FET General Purpose Power | R-PDSO-G9 | 50A | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 1950 mJ | 45 mΩ | 6.8nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLA10IM800UC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | RoHS Compliant | TO-252-3 | 2 | yes | EAR99 | UL RECOGNIZED, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 88A | CATHODE | GENERAL PURPOSE | SILICON | 10μA | 800V | TO-252AA | 1.01V | RECTIFIER DIODE | 800V | 10A | 80A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP12-12AZ | IXYS |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/littelfuse-dsep1212az-datasheets-7756.pdf | 3 | Single Dual Anode | EAR99 | -55 | 150 | TO-263 | D2PAK-HV | Surface Mount | 4.83(Max) | 10.41(Max) | 9.4(Max) | 2 | Gull-wing | 95000 | No | 1200 | 12 | 90 | 3.19@30A | 100 | 40(Typ) | Tab | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBOD1-25RD | IXYS | $81.31 |
Min: 1 Mult: 1 |
download | Through Hole | PCB, Through Hole | Bulk | 1 (Unlimited) | 125°C | -40°C | Mixed Technology | ROHS3 Compliant | 2000 | /files/ixys-ixbod125rd-datasheets-6329.pdf | 900mA | Radial | 2 | High Voltage | 3 | BOD | 30mA | 2500V 2.5kV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCC161-20IO1 | IXYS | $124.16 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-mcc16120io1-datasheets-1642.pdf | Y4-M6 | 7 | 24 Weeks | 7 | yes | UL RECOGNIZED | 8541.30.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | MC*161 | 7 | NOT SPECIFIED | 2 | Silicon Controlled Rectifiers | Not Qualified | 300A | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | 40mA | 150mA | 2kV | 6000 A | SCR | 2000V | 300A | 2V | 6000A 6400A | 165A | 1000V/us | 150 µs | 2G-2GR | Series Connection - All SCRs | 2 SCRs | A-K-AK | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI2X101-12A | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Panel, Screw | Chassis Mount | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei2x10112a-datasheets-4514.pdf | 1.2kV | 91A | SOT-227-4, miniBLOC | 51mm | 9mm | 34.3mm | Lead Free | 28 Weeks | No SVHC | 12 | No | DSEI2X | Dual | 250W | SOT-227B | 92A | 1.87V | 1.3kA | Fast Recovery =< 500ns, > 200mA (Io) | 970A | 3mA | 1.2kV | 970A | 1.2kV | 150 ns | 60 ns | Standard | 1.2kV | 91A | 1200V | 3mA @ 1200V | 1.87V @ 100A | 91A | 2 Independent | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1X200N60B3 | IXYS |
Min: 1 Mult: 1 |
download | GenX3™, XPT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-mmix1y100n120c3h1-datasheets-3248.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 28 Weeks | 24 | 625W | Single | 625W | 600V | 1.7V | 223A | 360V, 100A, 1 Ω, 15V | 1.7V @ 15V, 100A | PT | 315nC | 1000A | 48ns/160ns | 2.85mJ (on), 2.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH4N250C | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixgt4n250c-datasheets-3163.pdf | TO-247-3 | 3 | 14 Weeks | 150W | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | 2.5kV | 6V | 13A | 2500V | 471 ns | 1250V, 4A, 20 Ω, 15V | 20V | 5V | 6V @ 15V, 4A | 57nC | 46A | -/350ns | 360μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDMA700P1600CC | IXYS |
Min: 1 Mult: 1 |
download | MDMA700P1600CC | Chassis Mount | ComPack | 3 | 24 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | IEC-60747 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PUFM-X3 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2270W | 1600V | 500μA | Standard | 18400A | 1 | 1600V | 500μA @ 1600V | 1.14V @ 700A | 700A | -40°C~150°C | 1 Pair Series Connection |
