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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTY8N70X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixty8n70x2-datasheets-0423.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | yes | 700V | 150W Tc | N-Channel | 800pF @ 10V | 500m Ω @ 500mA, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n100q-datasheets-1418.pdf | TO-247-3 | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 180W | 1 | FET General Purpose Power | 15ns | 12 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 2Ohm | 700 mJ | 1kV | N-Channel | 2200pF @ 25V | 1.9 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFP5N100PM | IXYS | $7.20 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100pm-datasheets-2755.pdf | TO-220-3 Full Pack, Isolated Tab | 26 Weeks | 2.3A | 1000V | 42W Tc | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 2.3A Tc | 33.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU64N055T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 64A | 55V | N-Channel | 4V @ 25μA | 64A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N70X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n70x2m-datasheets-1751.pdf | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | yes | 700V | 32W Tc | N-Channel | 800pF @ 10V | 550m Ω @ 500mA, 10V | 5V @ 250μA | 4A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36P15P-TRL | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixta36p15ptrl-datasheets-9545.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 150V | 300W Tc | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA72N20X3 | IXYS | $8.42 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp72n20x3-datasheets-4593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 200V | 320W Tc | N-Channel | 3780pF @ 25V | 20m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N300P3HV | IXYS | $33.68 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n300p3hv-datasheets-7175.pdf | TO-247-3 Variant | 24 Weeks | 1A | 3000V | 195W Tc | N-Channel | 895pF @ 25V | 50 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 30.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK8N150L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtk8n150l-datasheets-3766.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 700W Tc | 8A | 20A | N-Channel | 8000pF @ 25V | 3.6 Ω @ 4A, 20V | 8V @ 250μA | 8A Tc | 250nC @ 15V | 20V | ±30V | |||||||||||||||||||||||||||||||||
| IXFP18N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-220-3 | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV60N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 60A | 300V | N-Channel | 60A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP26N65X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT36P10 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 36A | 100V | P-Channel | 36A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH30N60P | IXYS | $15.84 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 80A | 0.24Ohm | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFT120N15P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n15p-datasheets-5523.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 16MOhm | yes | EAR99 | AVALANCHE ENERGY RATED | unknown | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSSO-G2 | 42ns | 26 ns | 85 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 260A | 2000 mJ | 150V | N-Channel | 4900pF @ 25V | 16m Ω @ 500mA, 10V | 5V @ 4mA | 120A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTQ200N06P | IXYS | $8.67 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq200n06p-datasheets-4045.pdf | TO-3P-3, SC-65-3 | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | 60ns | 40 ns | 90 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 400A | 0.006Ohm | 4000 mJ | 60V | N-Channel | 5400pF @ 25V | 5m Ω @ 400A, 15V | 5V @ 250μA | 200A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFH50N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60x-datasheets-4003.pdf | TO-247-3 | 19 Weeks | 50A | 600V | 660W Tc | N-Channel | 4660pF @ 25V | 73m Ω @ 25A, 10V | 4.5V @ 4mA | 50A Tc | 116nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK120N20P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk120n20p-datasheets-4157.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | R-PSFM-T3 | 35ns | 31 ns | 100 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 300A | 0.022Ohm | 2000 mJ | 200V | N-Channel | 6000pF @ 25V | 22m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFT24N90P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 900V | 660W Tc | N-Channel | 7200pF @ 25V | 420m Ω @ 12A, 10V | 6.5V @ 1mA | 24A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX78N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk78n50p3-datasheets-2126.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1.13kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30 ns | 10ns | 7 ns | 60 ns | 78A | 30V | SILICON | DRAIN | SWITCHING | 1130W Tc | 200A | 0.068Ohm | 1500 mJ | 500V | N-Channel | 9900pF @ 25V | 68m Ω @ 500mA, 10V | 5V @ 4mA | 78A Tc | 147nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFR24N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n80p-datasheets-4275.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | Not Qualified | 27ns | 24 ns | 75 ns | 13A | SILICON | ISOLATED | SWITCHING | 208W Tc | 55A | 0.42Ohm | 1500 mJ | 800V | N-Channel | 7200pF @ 25V | 420m Ω @ 12A, 10V | 5V @ 4mA | 13A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTA02N250HV | IXYS | $13.44 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixta02n250hv-datasheets-4299.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 17 Weeks | 1.770002g | No | GULL WING | 3 | 1 | Single | 83W | 1 | R-PSSO-G2 | 19 ns | 19ns | 33 ns | 32 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 2500V | 83W Tc | 0.2A | 0.6A | 2.5kV | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTQ30N50L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtt30n50l2-datasheets-3664.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | SINGLE | 3 | 400W | 1 | FET General Purpose Power | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 2.5V | 400W Tc | 60A | 0.2Ohm | N-Channel | 8100pF @ 25V | 2.5 V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFH170N15X3 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 150V | 520W Tc | N-Channel | 7620pF @ 25V | 6.7m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 122nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT30N50L | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 10200pF @ 25V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK88N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk88n20q-datasheets-4443.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 15 ns | 61 ns | 88A | 30V | SILICON | DRAIN | 500W Tc | 2500 mJ | 200V | N-Channel | 4150pF @ 25V | 30m Ω @ 44A, 10V | 4V @ 4mA | 88A Tc | 146nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTN5N250 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn5n250-datasheets-4487.pdf | SOT-227-4, miniBLOC | 4 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 20ns | 44 ns | 90 ns | 5A | 30V | SILICON | ISOLATED | SWITCHING | 2500V | 700W Tc | 5A | 20A | 2500 mJ | 2.5kV | N-Channel | 8560pF @ 25V | 8.8 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFN90N170SK | IXYS | $263.73 |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~150°C TJ | SiCFET (Silicon Carbide) | SOT-227-4, miniBLOC | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1700V | N-Channel | 7340pF @ 1000V | 35m Ω @ 100A, 20V | 4V @ 36mA | 90A Tc | 376nC @ 20V | 20V | +20V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH35N30 | IXYS | $2.92 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh35n30-datasheets-7656.pdf | 300V | 35A | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 75 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 140A | 0.1Ohm | 300V | N-Channel | 4800pF @ 25V | 100m Ω @ 500mA, 10V | 4V @ 4mA | 35A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTP110N055P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp110n055p-datasheets-9421.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 390W | 1 | Not Qualified | 27 ns | 53ns | 45 ns | 66 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | TO-220AB | 250A | 1000 mJ | 55V | N-Channel | 2210pF @ 25V | 13.5m Ω @ 500mA, 10V | 5.5V @ 250μA | 110A Tc | 76nC @ 10V | 10V | ±20V |
