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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFP18N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP7N80P | IXYS | $4.29 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n80p-datasheets-9747.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 32ns | 24 ns | 55 ns | 7A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 7A | 18A | 800V | N-Channel | 1890pF @ 25V | 1.44 Ω @ 3.5A, 10V | 5V @ 1mA | 7A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||
| IXTP12N70X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 | 15 Weeks | compliant | 700V | 180W Tc | N-Channel | 960pF @ 25V | 300m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ24N50P2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfq24n50p2-datasheets-0066.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | AVALANCHE RATED | Pure Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 480W Tc | 50A | 0.27Ohm | 750 mJ | N-Channel | 2890pF @ 25V | 270m Ω @ 500mA, 10V | 4.5V @ 1mA | 24A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTH72N20T | IXYS | $1.83 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 72A | 200V | N-Channel | 72A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA50N25T | IXYS | $4.92 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtp50n25t-datasheets-2212.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 400W Tc | 0.05Ohm | 1500 mJ | N-Channel | 4000pF @ 25V | 50m Ω @ 25A, 10V | 5V @ 1mA | 50A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFP14N55X2M | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP3N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n80-datasheets-3925.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSFM-T3 | 11ns | 14 ns | 25 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 14.4A | 400 mJ | 800V | N-Channel | 685pF @ 25V | 3.6 Ω @ 500mA, 10V | 4.5V @ 1mA | 3.6A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFQ26N50P3 | IXYS | $6.13 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfp26n50p3-datasheets-1510.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 26 Weeks | 3 | Single | 21 ns | 38 ns | 26A | 30V | 500V | 500W Tc | N-Channel | 2220pF @ 25V | 230m Ω @ 13A, 10V | 5V @ 4mA | 26A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFA30N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp30n60x-datasheets-0441.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 30A | 600V | 500W Tc | N-Channel | 2270pF @ 25V | 155m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH24N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-247-3 | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH102N20T | IXYS |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixth102n20t-datasheets-0598.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 750W | 1 | FET General Purpose Power | Not Qualified | 26ns | 25 ns | 50 ns | 102A | 30V | SILICON | DRAIN | SWITCHING | 750W Tc | 250A | 1200 mJ | 200V | N-Channel | 6800pF @ 25V | 23m Ω @ 500mA, 10V | 4.5V @ 1mA | 102A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFH13N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n100-datasheets-0650.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 33ns | 32 ns | 62 ns | 12.5A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | 50A | 0.9Ohm | 1kV | N-Channel | 4000pF @ 25V | 900m Ω @ 500mA, 10V | 4.5V @ 4mA | 12.5A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTT38N30L2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 300V | 400W Tc | N-Channel | 7200pF @ 25V | 100m Ω @ 19A, 10V | 4.5V @ 250μA | 38A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX73N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx73n30q-datasheets-0740.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 36ns | 12 ns | 82 ns | 73A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 292A | 0.045Ohm | 2500 mJ | 300V | N-Channel | 5400pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 4mA | 73A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFK150N30P3 | IXYS | $18.18 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n30p3-datasheets-3408.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 30 Weeks | No SVHC | 3 | EAR99 | Single | 44 ns | 74 ns | 150A | 20V | 300V | 5V | 1300W Tc | N-Channel | 12100pF @ 25V | 19m Ω @ 75A, 10V | 5V @ 8mA | 150A Tc | 197nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA24N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth24n65x2-datasheets-0403.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 650V | 390W Tc | N-Channel | 2060pF @ 25V | 145m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL60N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfl60n80p-datasheets-3500.pdf | ISOPLUS264™ | Lead Free | 3 | 26 Weeks | 150MOhm | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 29ns | 26 ns | 110 ns | 40A | 30V | SILICON | ISOLATED | SWITCHING | 625W Tc | 150A | 5000 mJ | 800V | N-Channel | 18000pF @ 25V | 150m Ω @ 30A, 10V | 5V @ 8mA | 40A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFX64N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfk64n50q3-datasheets-3727.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 36 ns | 250ns | 46 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 160A | 0.085Ohm | 4000 mJ | 500V | N-Channel | 6950pF @ 25V | 85m Ω @ 32A, 10V | 6.5V @ 4mA | 64A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFX32N80Q3 | IXYS | $26.31 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n80q3-datasheets-3738.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | No | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 38 ns | 300ns | 45 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 80A | 0.27Ohm | 3000 mJ | 800V | N-Channel | 6940pF @ 25V | 270m Ω @ 16A, 10V | 6.5V @ 4mA | 32A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXTR210P10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr210p10t-datasheets-0971.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 195A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 595W Tc | 158A | 800A | 0.008Ohm | 3000 mJ | P-Channel | 69500pF @ 25V | 8m Ω @ 105A, 10V | 4.5V @ 250μA | 195A Tc | 740nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||
| IXTZ550N055T2 | IXYS |
Min: 1 Mult: 1 |
download | FRFET®, SupreMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtz550n055t2-datasheets-1002.pdf | DE475 | Lead Free | 6 | 18 Weeks | 1mOhm | 475 | yes | EAR99 | AVALANCHE RATED | DUAL | FLAT | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDFP-F6 | 550A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | 600W Tc | 1650A | 3000 mJ | N-Channel | 40000pF @ 25V | 1m Ω @ 100A, 10V | 4V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFN23N100 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfn23n100-datasheets-1041.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 568W | 1 | FET General Purpose Power | Not Qualified | 35ns | 21 ns | 75 ns | 23A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 600W Tc | 92A | 390mOhm | 3000 mJ | 1kV | N-Channel | 5V @ 8mA | 23A Tc | 10V | ±20V | |||||||||||||||||||||||||||
| IXFE48N50QD3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 192A | 0.11Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 41A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFB38N100Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfb38n100q2-datasheets-1110.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | 250MOhm | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 25 ns | 28ns | 15 ns | 57 ns | 38A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 890W Tc | 152A | 5000 mJ | 1kV | N-Channel | 13500pF @ 25V | 250m Ω @ 19A, 10V | 5.5V @ 8mA | 38A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||
| IXFN80N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n50q3-datasheets-1154.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | EAR99 | UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | Single | 780W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 250ns | 43 ns | 63A | 30V | SILICON | ISOLATED | SWITCHING | 780W Tc | 0.065Ohm | 5000 mJ | 500V | N-Channel | 10000pF @ 25V | 65m Ω @ 40A, 10V | 6.5V @ 8mA | 63A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTK3N250L | IXYS | $64.34 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-264-3, TO-264AA | 24 Weeks | compliant | 2500V | 417W Tc | N-Channel | 5400pF @ 25V | 10 Ω @ 1.5A, 10V | 5V @ 1mA | 3A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX44N80Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n80q3-datasheets-0999.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED | 3 | Single | 1.25kW | 1 | FET General Purpose Power | R-PSIP-T3 | 45 ns | 300ns | 63 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 130A | 0.19Ohm | 3500 mJ | 800V | N-Channel | 9840pF @ 25V | 190m Ω @ 22A, 10V | 6.5V @ 8mA | 44A Tc | 185nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTA1N80 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n80-datasheets-1682.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 40W | 1 | Not Qualified | R-PSSO-G2 | 19ns | 28 ns | 40 ns | 750mA | 20V | SILICON | DRAIN | SWITCHING | 40W Tc | 0.75A | 3A | 100 mJ | 800V | N-Channel | 220pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 25μA | 750mA Tc | 8.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXTU08N100P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 8A | 1000V | N-Channel | 8A Tc |
