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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA150N15X4 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta150n15x47-datasheets-5571.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 6.9m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH150N15X4 | IXYS | $10.34 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp150n15x4-datasheets-5515.pdf | TO-247-3 | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 7.2m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN240N25X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn240n25x3-datasheets-9154.pdf | SOT-227-4, miniBLOC | 19 Weeks | 250V | 695W Tc | N-Channel | 23800pF @ 25V | 4.5m Ω @ 120A, 10V | 4.5V @ 8mA | 240A Tc | 345nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH140P10T | IXYS | $15.53 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth140p10t-datasheets-7071.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSFM-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 568W Tc | TO-247AD | 400A | 0.012Ohm | 2000 mJ | P-Channel | 31400pF @ 25V | 12m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 400nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||
| IXFN102N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfn102n30p-datasheets-7201.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 30 Weeks | 33MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 30 ns | 28ns | 30 ns | 130 ns | 88A | 20V | SILICON | ISOLATED | SWITCHING | 600W Tc | 250A | 5000 mJ | 300V | N-Channel | 7500pF @ 25V | 33m Ω @ 500mA, 10V | 5V @ 4mA | 88A Tc | 224nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| IXFN44N80Q3 | IXYS | $53.11 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n80q3-datasheets-2247.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 780W | 1 | FET General Purpose Power | 45 ns | 300ns | 63 ns | 37A | 30V | SILICON | ISOLATED | SWITCHING | 780W Tc | 130A | 0.19Ohm | 3500 mJ | 800V | N-Channel | 9840pF @ 25V | 190m Ω @ 22A, 10V | 6.5V @ 8mA | 37A Tc | 185nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFK32N100Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n100q3-datasheets-1617.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 20 Weeks | 3 | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 45 ns | 250ns | 54 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1250W Tc | 96A | 1kV | N-Channel | 9940pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 8mA | 32A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTA70N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 150W Tc | N-Channel | 2725pF @ 25V | 12m Ω @ 25A, 10V | 4V @ 250μA | 70A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R6N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 100W Tc | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 4.5V @ 100μA | 1.6A Tj | 27nC @ 5V | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP06N120P | IXYS | $16.99 |
Min: 1 Mult: 1 |
download | PolarVHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta06n120p-datasheets-0969.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | 24ns | 27 ns | 50 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 1200V | 42W Tc | TO-220AB | 0.6A | 1.2A | 50 mJ | 1.2kV | N-Channel | 270pF @ 25V | 32 Ω @ 500mA, 10V | 4.5V @ 50μA | 600mA Tc | 13.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXFP30N25X3M | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp30n25x3m-datasheets-3556.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 250V | 36W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR44N50Q3 | IXYS | $21.65 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfr44n50q3-datasheets-3659.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | unknown | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSIP-T3 | 30 ns | 250ns | 37 ns | 25A | 30V | SILICON | ISOLATED | SWITCHING | 300W Tc | 130A | 0.154Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 154m Ω @ 22A, 10V | 6.5V @ 4mA | 25A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFR32N80Q3 | IXYS | $34.66 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfr32n80q3-datasheets-3730.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 500W | 1 | FET General Purpose Power | R-PSIP-T3 | 38 ns | 300ns | 45 ns | 24A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 84A | 0.3Ohm | 3000 mJ | 800V | N-Channel | 6940pF @ 25V | 300m Ω @ 16A, 10V | 6.5V @ 4mA | 24A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTT64N25P | IXYS | $44.89 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt64n25p-datasheets-3795.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | R-PSSO-G2 | 23ns | 20 ns | 60 ns | 64A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 0.049Ohm | 250V | N-Channel | 3450pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 250μA | 64A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTV120N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 120A | 150V | N-Channel | 120A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH86N25T | IXYS | $8.07 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 540W Ta | TO-247AD | 86A | 190A | 0.037Ohm | 1500 mJ | N-Channel | 5330pF @ 25V | 37m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFP36N55X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA3N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n80-datasheets-3925.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 11ns | 14 ns | 25 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 14.4A | 400 mJ | 800V | N-Channel | 685pF @ 25V | 3.6 Ω @ 500mA, 10V | 4.5V @ 1mA | 3.6A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTA80N075L2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 357W Tc | N-Channel | 3600pF @ 25V | 24m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N60P3 | IXYS | $11.68 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXFR20N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr20n80p-datasheets-4080.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 24ns | 25 ns | 70 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 0.5Ohm | 1000 mJ | 800V | N-Channel | 4680pF @ 25V | 500m Ω @ 10A, 10V | 5V @ 4mA | 11A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTQ100N25P | IXYS | $10.14 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt100n25p-datasheets-5585.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | No SVHC | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 26ns | 28 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | 250A | 2000 mJ | 250V | N-Channel | 6300pF @ 25V | 24m Ω @ 50A, 10V | 5V @ 250μA | 100A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXTT11P50 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixth11p50-datasheets-5654.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 750mOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | GULL WING | 4 | Single | 300W | 1 | Other Transistors | R-PSSO-G2 | 27ns | 35 ns | 35 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 44A | -500V | P-Channel | 4700pF @ 25V | 750m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFR30N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr30n60p-datasheets-4214.pdf | 600V | 30A | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 20ns | 25 ns | 75 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 80A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 3820pF @ 25V | 250m Ω @ 15A, 10V | 5V @ 4mA | 15A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFT60N65X2HV | IXYS | $12.18 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft60n65x2hv-datasheets-4251.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 650V | 780W Tc | N-Channel | 6300pF @ 25V | 52m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 108nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR26N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n50-datasheets-4223.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 26A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 24A | 104A | 0.2Ohm | 500V | N-Channel | 4200pF @ 25V | 200m Ω @ 13A, 10V | 4V @ 4mA | 26A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFH60N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n60x-datasheets-4330.pdf | TO-247-3 | 19 Weeks | 60A | 600V | 890W Tc | N-Channel | 5800pF @ 25V | 55m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 143nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ30N50L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 10200pF @ 25V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTR200N10P | IXYS | $14.87 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtr200n10p-datasheets-4384.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 35ns | 90 ns | 150 ns | 120A | 20V | SILICON | ISOLATED | SWITCHING | 300W Tc | 400A | 0.008Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 8m Ω @ 60A, 10V | 5V @ 500μA | 120A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFR24N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n90p-datasheets-4422.pdf | ISOPLUS247™ | 3 | 30 Weeks | yes | UL RECOGNIZED, AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 230W Tc | 48A | 0.46Ohm | 1000 mJ | N-Channel | 7200pF @ 25V | 460m Ω @ 12A, 10V | 6.5V @ 1mA | 13A Tc | 130nC @ 10V | 10V | ±30V |
