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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFE48N50QD2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 192A | 0.11Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 41A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFL32N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfl32n120p-datasheets-1127.pdf | ISOPLUSi5-Pak™ | 20.29mm | 26.42mm | 5.21mm | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 70 ns | 62ns | 51 ns | 88 ns | 24A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 520W Tc | 100A | 2000 mJ | 1.2kV | N-Channel | 21000pF @ 25V | 340m Ω @ 16A, 10V | 6.5V @ 1mA | 24A Tc | 360nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTF2N300P3 | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtf2n300p3-datasheets-1168.pdf | ISOPLUSi5-Pak™ | 28 Weeks | compliant | 3000V | 160W Tc | N-Channel | 1890pF @ 25V | 21 Ω @ 1A, 10V | 5V @ 250μA | 1.6A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN90P20P | IXYS | $32.83 |
Min: 1 Mult: 1 |
download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtn90p20p-datasheets-1418.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | 38.000013g | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 890W Tc | 270A | 0.044Ohm | 3500 mJ | P-Channel | 12000pF @ 25V | 44m Ω @ 500mA, 10V | 4V @ 1mA | 90A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA50N20P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 200V | 360W Tc | N-Channel | 2720pF @ 25V | 60m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ28N15P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtq28n15p-datasheets-1812.pdf | TO-3P-3, SC-65-3 | TO-3P | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N120P | IXYS | $3.37 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp08n120p-datasheets-2050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 55 ns | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1200V | 50W Tc | 0.8A | 80 mJ | 1.2kV | N-Channel | 333pF @ 25V | 25 Ω @ 500mA, 10V | 4.5V @ 50μA | 800mA Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTA170N075T2 | IXYS | $19.60 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta170n075t2-datasheets-2178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | Single | 360W | TO-263 (IXTA) | 6.86nF | 11ns | 19 ns | 25 ns | 170A | 20V | 75V | 360W Tc | 5.4mOhm | 75V | N-Channel | 6860pF @ 25V | 5.4mOhm @ 50A, 10V | 4V @ 250μA | 170A Tc | 109nC @ 10V | 5.4 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTA74N15T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 74A | 150V | N-Channel | 74A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP26P10T | IXYS | $1.70 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 150W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15ns | 1 ns | 37 ns | 26A | 15V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 80A | 0.09Ohm | 300 mJ | 100V | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| IXTA86N20T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 200V | 550W Tc | N-Channel | 4500pF @ 25V | 33m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY26P10T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | TO-252 | 100V | 150W Tc | P-Channel | 3820pF @ 25V | 90mOhm @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 114W Tc | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFA12N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 650V | 180W Tc | N-Channel | 1134pF @ 25V | 310m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 18.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA28P065T | IXYS | $4.30 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta28p065t-datasheets-4647.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 83W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 28A | 15V | SILICON | DRAIN | SWITCHING | 65V | 83W Tc | 90A | 0.045Ohm | 200 mJ | -65V | P-Channel | 2030pF @ 25V | 45m Ω @ 14A, 10V | 4.5V @ 250μA | 28A Tc | 46nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||
| IXTY2R4N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty2r4n50p-datasheets-5764.pdf | 500V | 2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 55W | 1 | Not Qualified | R-PSSO-G2 | 29ns | 28 ns | 65 ns | 2.4A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-252AA | 4.5A | 100 mJ | 500V | N-Channel | 240pF @ 25V | 3.75 Ω @ 500mA, 10V | 5.5V @ 25μA | 2.4A Tc | 6.1nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTV30N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50p-datasheets-3823.pdf | 500V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFC36N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr36n50p-datasheets-3707.pdf | 500V | 36A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 156W | 1 | Not Qualified | 23ns | 23 ns | 82 ns | 19A | 30V | SILICON | ISOLATED | SWITCHING | 156W Tc | 500V | N-Channel | 5500pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 19A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFC16N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc16n50p-datasheets-5928.pdf | 500V | 16A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 25ns | 22 ns | 70 ns | 10A | 30V | SILICON | ISOLATED | SWITCHING | 125W Tc | 0.45Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 450m Ω @ 8A, 10V | 5.5V @ 2.5mA | 10A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFR26N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n50q-datasheets-7365.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 30ns | 16 ns | 55 ns | 24A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 104A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3900pF @ 25V | 200m Ω @ 13A, 10V | 4.5V @ 4mA | 24A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFT21N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft21n50q-datasheets-7416.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 280W | 1 | Not Qualified | R-PSSO-G2 | 28ns | 12 ns | 51 ns | 21A | 30V | SILICON | DRAIN | SWITCHING | 280W Tc | 84A | 0.25Ohm | 1500 mJ | 500V | N-Channel | 3000pF @ 25V | 250m Ω @ 10.5A, 10V | 4.5V @ 4mA | 21A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTA160N085T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n085t-datasheets-7462.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 61ns | 36 ns | 65 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 350A | 0.006Ohm | 1000 mJ | 85V | N-Channel | 6400pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 1mA | 160A Tc | 164nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTC200N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtc200n10t-datasheets-7509.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 160W | 1 | FET General Purpose Power | Not Qualified | 45 ns | 101A | SILICON | ISOLATED | SWITCHING | 160W Tc | 500A | 1500 mJ | 100V | N-Channel | 9400pF @ 25V | 6.3m Ω @ 50A, 10V | 4.5V @ 250μA | 101A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTC160N085T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | ISOPLUS220™ | 6mOhm | 110A | 85V | N-Channel | 110A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP2N80P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80p-datasheets-7550.pdf | TO-220-3 | 3 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSFM-T3 | 35ns | 28 ns | 53 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-220AB | 2A | 4A | 6Ohm | 100 mJ | 800V | N-Channel | 440pF @ 25V | 6 Ω @ 1A, 10V | 5.5V @ 50μA | 2A Tc | 10.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTP152N085T | IXYS | $0.80 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta152n085t-datasheets-7446.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 50ns | 45 ns | 50 ns | 152A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 410A | 0.007Ohm | 750 mJ | 85V | N-Channel | 5500pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 152A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTC250N075T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtc250n075t-datasheets-7648.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 160W | 1 | Not Qualified | 55 ns | 128A | SILICON | ISOLATED | SWITCHING | 160W Tc | 600A | 0.0044Ohm | 1000 mJ | 75V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 25A, 10V | 4V @ 250μA | 128A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTY2N80P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80p-datasheets-7550.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 53 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 2A | 4A | 6Ohm | 100 mJ | 800V | N-Channel | 440pF @ 25V | 6 Ω @ 1A, 10V | 5.5V @ 50μA | 2A Tc | 10.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTP182N055T | IXYS | $1.50 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta182n055t-datasheets-7499.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFR12N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1kV | 12A | ISOPLUS247™ | Lead Free | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1000V | 48A | N-Channel | 2900pF @ 25V | 1.1 Ω @ 6A, 10V | 5.5V @ 4mA | 10A Tc | 90nC @ 10V |
