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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Applications | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | Number of I/O | Core Architecture | RAM Size | Forward Current | Forward Voltage | Turn On Delay Time | RMS Current (Irms) | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Leakage Current (Max) | Threshold Voltage | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Non-Repetitive Pk On-state Cur | Reverse Recovery Time-Max | Trigger Device Type | Utilized IC / Part | Repetitive Peak Off-state Voltage | Voltage - Clamping | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - On State (It (AV)) (Max) | Critical Rate of Rise of Off-State Voltage-Min | Circuit Commutated Turn-off Time-Nom | Desc. of Quick-Connects | Program Memory Type | Program Memory Size | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Desc. of Screw Terminals | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Device Core | Maximum Operating Temperature (°C) | Standard Package Name | Supplier Package | Mounting | Package Height | Package Length | Package Width | PCB changed | Minimum Operating Supply Voltage (V) | Maximum Operating Supply Voltage (V) | Typical Operating Supply Voltage (V) | Lead Shape | Maximum Power Dissipation (mW) | Family Name | Instruction Set Architecture | Maximum CPU Frequency (MHz) | Maximum Clock Rate (MHz) | Data Bus Width (bit) | Programmability | Interface Type | No. of Timers | UART |
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| IXFK32N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50q-datasheets-8700.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN230N10 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn230n10-datasheets-4384.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 8 Weeks | No SVHC | 6mOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 700W | 1 | FET General Purpose Power | 40 ns | 150ns | 60 ns | 112 ns | 230A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 700W Tc | 250 ns | 920A | 100V | N-Channel | 19000pF @ 25V | 4 V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 230A Tc | 570nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV12N90PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n90p-datasheets-4161.pdf | PLUS-220SMD | 2 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | Not Qualified | R-PSSO-G2 | 12A | 30V | SILICON | DRAIN | SWITCHING | 380W Tc | 24A | 0.9Ohm | 500 mJ | 900V | N-Channel | 3080pF @ 25V | 900m Ω @ 6A, 10V | 6.5V @ 1mA | 12A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD26N50Q-72 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | Die | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 0.235Ohm | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH21N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth21n50q-datasheets-3269.pdf | TO-247-3 | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 500V | 500V | 300W Tc | TO-247AD | 21A | 84A | 0.25Ohm | 1.5 mJ | N-Channel | 4200pF @ 25V | 250m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX32N48Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFY8N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n65x2-datasheets-1933.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 19 Weeks | 650V | 150W Tc | N-Channel | 790pF @ 25V | 450m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM40N30 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtm40n30-datasheets-4851.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 300W Tc | 40A | 160A | 0.088Ohm | N-Channel | 4600pF @ 25V | 88m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTD3N50P-2J | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | 500V | 70W Tc | N-Channel | 409pF @ 25V | 2 Ω @ 1.5A, 10V | 5.5V @ 50μA | 3A Tc | 9.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI414 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdn409-datasheets-5903.pdf | Yes | FET Driver (External FET) | IXDI414 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDS430SI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDS430SI | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH36N60P | IXYS | $10.64 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft36n60p-datasheets-4150.pdf | 600V | 36A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | 30 ns | 25ns | 22 ns | 80 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | TO-247AD | 80A | 0.19Ohm | 1500 mJ | 600V | N-Channel | 5800pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 36A Tc | 102nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX210N30X3 | IXYS | $26.94 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx210n30x3-datasheets-8871.pdf | TO-247-3 | 19 Weeks | 300V | 1250W Tc | N-Channel | 24.2nF @ 25V | 5.5m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 375nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP36N20X3 | IXYS | $3.71 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy36n20x3-datasheets-3750.pdf | TO-220-3 | 3 | 19 Weeks | AVALANCHE RATED | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 176W Tc | TO-220AB | 36A | 50A | 0.045Ohm | 300 mJ | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH24P20 | IXYS | $9.97 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtt24p20-datasheets-4098.pdf | -200V | -24A | TO-247-3 | Lead Free | 3 | 28 Weeks | 150mOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | Other Transistors | 29ns | 28 ns | 68 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | 96A | -200V | P-Channel | 4200pF @ 25V | 150m Ω @ 500mA, 10V | 5V @ 250μA | 24A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK64N60Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx64n60q3-datasheets-3702.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1.25kW | 1 | FET General Purpose Power | 45 ns | 300ns | 50 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 250A | 0.095Ohm | 600V | N-Channel | 9930pF @ 25V | 95m Ω @ 32A, 10V | 6.5V @ 4mA | 64A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120-TRL | IXYS | $5.19 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n120-datasheets-9177.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 17 Weeks | 3A | 1200V | 200W Tc | N-Channel | 1350pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG30IM300PC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | SILICON | 175W | 1μA | TO-263AB | 1.66V | RECTIFIER DIODE | 300V | 30A | 360A | 1 | 0.035μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK28-006BS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -55°C | SCHOTTKY | RoHS Compliant | TO-263-3 | 2 | 3 | yes | EAR99 | FREEWHEELING DIODE, HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 560mV | 300A | 10mA | GENERAL PURPOSE | SILICON | 90W | 300A | RECTIFIER DIODE | 60V | 15A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK48-003BS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | Common Cathode | 30V | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Z86C3616PSGRXXX | IXYS |
Min: 1 Mult: 1 |
download | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-z86c3616psgrxxx-datasheets-1421.pdf | 28 | 24 | Z8 | 237B | ROM | 64KB | Z8 | 70 | DIP | PDIP | Through Hole | 4.19(Max) | 37.34(Max) | 14.1(Max) | 28 | 3 | 5.5 | 5|3.3 | Through Hole | 1210 | Z8 | CISC | 16 | 16 | 8 | Yes | UART | 2 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBOD1-25RD | IXYS | $81.31 |
Min: 1 Mult: 1 |
download | Through Hole | PCB, Through Hole | Bulk | 1 (Unlimited) | 125°C | -40°C | Mixed Technology | ROHS3 Compliant | 2000 | /files/ixys-ixbod125rd-datasheets-6329.pdf | 900mA | Radial | 2 | High Voltage | 3 | BOD | 30mA | 2500V 2.5kV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCC161-20IO1 | IXYS | $124.16 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-mcc16120io1-datasheets-1642.pdf | Y4-M6 | 7 | 24 Weeks | 7 | yes | UL RECOGNIZED | 8541.30.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | MC*161 | 7 | NOT SPECIFIED | 2 | Silicon Controlled Rectifiers | Not Qualified | 300A | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | 40mA | 150mA | 2kV | 6000 A | SCR | 2000V | 300A | 2V | 6000A 6400A | 165A | 1000V/us | 150 µs | 2G-2GR | Series Connection - All SCRs | 2 SCRs | A-K-AK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI2X101-12A | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Panel, Screw | Chassis Mount | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei2x10112a-datasheets-4514.pdf | 1.2kV | 91A | SOT-227-4, miniBLOC | 51mm | 9mm | 34.3mm | Lead Free | 28 Weeks | No SVHC | 12 | No | DSEI2X | Dual | 250W | SOT-227B | 92A | 1.87V | 1.3kA | Fast Recovery =< 500ns, > 200mA (Io) | 970A | 3mA | 1.2kV | 970A | 1.2kV | 150 ns | 60 ns | Standard | 1.2kV | 91A | 1200V | 3mA @ 1200V | 1.87V @ 100A | 91A | 2 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1X200N60B3 | IXYS |
Min: 1 Mult: 1 |
download | GenX3™, XPT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-mmix1y100n120c3h1-datasheets-3248.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 28 Weeks | 24 | 625W | Single | 625W | 600V | 1.7V | 223A | 360V, 100A, 1 Ω, 15V | 1.7V @ 15V, 100A | PT | 315nC | 1000A | 48ns/160ns | 2.85mJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH4N250C | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixgt4n250c-datasheets-3163.pdf | TO-247-3 | 3 | 14 Weeks | 150W | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | 2.5kV | 6V | 13A | 2500V | 471 ns | 1250V, 4A, 20 Ω, 15V | 20V | 5V | 6V @ 15V, 4A | 57nC | 46A | -/350ns | 360μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDMA700P1600CC | IXYS |
Min: 1 Mult: 1 |
download | MDMA700P1600CC | Chassis Mount | ComPack | 3 | 24 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | IEC-60747 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PUFM-X3 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2270W | 1600V | 500μA | Standard | 18400A | 1 | 1600V | 500μA @ 1600V | 1.14V @ 700A | 700A | -40°C~150°C | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ130B24K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz130b28k-datasheets-7646.pdf | Module | 3 | 18 Weeks | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ130 | 3 | NOT SPECIFIED | 2 | Not Qualified | 24V | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 24kV | Standard | 24kV | 1A | 1A | 24000V | 500μA @ 24000V | 24V @ 2A | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ120A32K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz120a32k-datasheets-7709.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ120 | 3 | NOT SPECIFIED | 2 | Not Qualified | 36.8V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 32kV | Standard | 32kV | 2A | 1 | 2A | 32000V | 500μA @ 32000V | 36.8V @ 12A | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ120A51K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz120a32k-datasheets-7709.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ120 | 3 | NOT SPECIFIED | 2 | Not Qualified | 36.8V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 51kV | Standard | 51kV | 2A | 1 | 2A | 51000V | 500μA @ 51000V | 36.8V @ 12A | 1 Pair Series Connection |
