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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTT10N100D | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d-datasheets-4365.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 85ns | 75 ns | 110 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 400W Tc | 20A | 1kV | N-Channel | 2500pF @ 25V | 1.4 Ω @ 10A, 10V | 3.5V @ 250μA | 10A Tc | 130nC @ 10V | Depletion Mode | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTT72N20 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth72n20-datasheets-4294.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 20 ns | 80 ns | 72A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 288A | 0.033Ohm | 1500 mJ | 200V | N-Channel | 4400pF @ 25V | 33m Ω @ 500mA, 10V | 4V @ 250μA | 72A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFH67N10 | IXYS | $82.50 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh67n10-datasheets-7587.pdf | 100V | 67A | TO-247-3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 60ns | 60 ns | 80 ns | 67A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 268A | 0.025Ohm | 100V | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTP56N15T | IXYS | $0.55 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp56n15t-datasheets-9402.pdf | TO-220-3 | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 56A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | TO-220AB | 140A | 500 mJ | N-Channel | 2250pF @ 25V | 36m Ω @ 28A, 10V | 4.5V @ 250μA | 56A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTP20N65X2 | IXYS | $4.81 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 | 15 Weeks | compliant | 650V | 290W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N110-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1100V | 150W Tc | N-Channel | 1300pF @ 25V | 4 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP140N055T2 | IXYS | $3.25 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp140n055t2-datasheets-9883.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 250W Tc | TO-220AB | 350A | 0.0054Ohm | 600 mJ | N-Channel | 4760pF @ 25V | 5.4m Ω @ 50A, 10V | 4V @ 250μA | 140A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA1N100 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n100-datasheets-0025.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 11Ohm | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 54W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 19ns | 18 ns | 20 ns | 1.5A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 54W Tc | 6A | 200 mJ | 1kV | N-Channel | 400pF @ 25V | 11 Ω @ 1A, 10V | 4.5V @ 25μA | 1.5A Tc | 14.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTP76N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta76n25t-datasheets-0048.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 29 ns | 56 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | TO-220AB | 170A | 0.039Ohm | 1500 mJ | 250V | N-Channel | 4500pF @ 25V | 39m Ω @ 500mA, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTH44N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | Single | 44A | 300V | N-Channel | 44A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N100PM | IXYS | $4.93 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | TO-220-3 Full Pack, Isolated Tab | 3 | 26 Weeks | AVALANCHE RATED | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1000V | 1000V | 40W Tc | TO-220AB | 2.5A | 8A | 200 mJ | N-Channel | 1456pF @ 25V | 3.3 Ω @ 2A, 10V | 6V @ 250μA | 2.1A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXKP24N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkh24n60c5-datasheets-3813.pdf | TO-220-3 | Lead Free | 3 | 28 Weeks | 165MOhm | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 24A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 24A Tc | 52nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTQ120N15T | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 600W | 120A | 150V | N-Channel | 4900pF @ 25V | 16m Ω @ 500mA, 10V | 120A Tc | 150nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKP24N60C5M | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp24n60c5m-datasheets-0485.pdf | TO-220-3 Full Pack, Isolated Tab | Lead Free | 3 | 32 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 34W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5ns | 5 ns | 50 ns | 8.5A | 20V | SILICON | SWITCHING | TO-220AB | 0.165Ohm | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 10A, 10V | 3.5V @ 790μA | 8.5A Tc | 52nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA86N20T | IXYS | $24.14 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp86n20t-datasheets-0035.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 86A | 30V | SILICON | DRAIN | SWITCHING | 480W Tc | 260A | 0.029Ohm | 1000 mJ | 200V | N-Channel | 4500pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFT80N08 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixft80n08-datasheets-0584.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | 300W Tc | 0.009Ohm | 80V | N-Channel | 4800pF @ 25V | 9m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFA20N85XHV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 850V | 540W Tc | N-Channel | 1660pF @ 25V | 330m Ω @ 10A, 10V | 5.5V @ 2.5mA | 20A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX12N90Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx12n90q-datasheets-0659.pdf | TO-247-3 | 3 | 3 | yes | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 23ns | 15 ns | 40 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 48A | 0.9Ohm | 900V | N-Channel | 2900pF @ 25V | 900m Ω @ 6A, 10V | 5.5V @ 4mA | 12A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTH60N20L2 | IXYS | $30.83 |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt60n20l2-datasheets-3662.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 540W Tc | 150A | 0.045Ohm | 2000 mJ | N-Channel | 10500pF @ 25V | 45m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX240N15T2 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk240n15t2-datasheets-4940.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 247 | 1 | yes | EAR99 | AVALANCHE RATED | 120A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 150V | 240A | 48 ns | 125ns | 145 ns | 77 ns | 240A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 600A | 0.0052Ohm | 2000 mJ | N-Channel | 32000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 240A Tc | 460nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFT23N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n80q-datasheets-0782.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 53 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 14 ns | 74 ns | 23A | 30V | SILICON | DRAIN | 500W Tc | 92A | 0.4Ohm | 1500 mJ | 800V | N-Channel | 4900pF @ 25V | 420m Ω @ 500mA, 10V | 4.5V @ 3mA | 23A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFX20N120P | IXYS | $151.16 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120p-datasheets-0816.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | No SVHC | 247 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 45ns | 70 ns | 72 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 6.5V | 780W Tc | 50A | 0.57Ohm | 1000 mJ | 1.2kV | N-Channel | 11100pF @ 25V | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 20A Tc | 193nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXFE48N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe44n50q-datasheets-0847.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 192A | 0.11Ohm | 2.5 mJ | 500V | N-Channel | 7000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 41A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFB210N20P | IXYS | $34.33 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfb210n20p-datasheets-0910.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | 264 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.5kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 210A | 20V | SILICON | DRAIN | SWITCHING | 1500W Tc | 600A | 0.0105Ohm | 4000 mJ | 200V | N-Channel | 18600pF @ 25V | 10.5m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFN100N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n65x2-datasheets-0941.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 650V | 595W Tc | N-Channel | 10800pF @ 25V | 30m Ω @ 50A, 10V | 5V @ 4mA | 78A Tc | 183nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR26N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n120p-datasheets-0984.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 320W | 1 | FET General Purpose Power | Not Qualified | 55ns | 58 ns | 76 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 320W Tc | 60A | 0.5Ohm | 1500 mJ | 1.2kV | N-Channel | 14000pF @ 25V | 500m Ω @ 13A, 10V | 6.5V @ 1mA | 15A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFT80N085 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft80n085-datasheets-1019.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 85A | 320A | 0.009Ohm | 2500 mJ | 85V | N-Channel | 4800pF @ 25V | 9m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTN200N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtn200n10t-datasheets-1054.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | 31ns | 34 ns | 45 ns | 200A | 20V | SILICON | ISOLATED | SWITCHING | 550W Tc | 500A | 0.0055Ohm | 100V | N-Channel | 9400pF @ 25V | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTX22N100L | IXYS | $39.28 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtk22n100l-datasheets-7159.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 600MOhm | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 36 ns | 35ns | 50 ns | 80 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 700W Tc | 50A | 1500 mJ | 1kV | N-Channel | 7050pF @ 25V | 600m Ω @ 11A, 20V | 5V @ 250μA | 22A Tc | 270nC @ 15V | 10V | ±30V | |||||||||||||||||||||||||
| IXFB50N80Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfb50n80q2-datasheets-1123.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26 ns | 25ns | 13 ns | 60 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1135W Tc | 200A | 5000 mJ | 800V | N-Channel | 7200pF @ 25V | 160m Ω @ 500mA, 10V | 5.5V @ 8mA | 50A Tc | 260nC @ 10V | 10V | ±30V |
