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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH04N300P3HV | IXYS | $32.62 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixth04n300p3hv-datasheets-3649.pdf | TO-247-3 Variant | 17 Weeks | 400mA | 3000V | 104W Tc | N-Channel | 283pF @ 25V | 190 Ω @ 200mA, 10V | 4V @ 250μA | 400mA Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ30N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq30n60x-datasheets-3713.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 30A | 600V | 500W Tc | N-Channel | 2270pF @ 25V | 155m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ34N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfq34n50p3-datasheets-3778.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 26 Weeks | 3 | Single | 23 ns | 40 ns | 34A | 30V | 500V | 695W Tc | N-Channel | 3260pF @ 25V | 170m Ω @ 17A, 10V | 5V @ 4mA | 34A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTT96N15P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt96n15p-datasheets-3824.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 33ns | 18 ns | 66 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.024Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 250μA | 96A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXTV72N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 72A | 300V | N-Channel | 72A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH160N15T2 | IXYS | $2.92 |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfh160n15t2-datasheets-3886.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 880W Tc | 440A | 0.009Ohm | 1500 mJ | N-Channel | 15000pF @ 25V | 9m Ω @ 80A, 10V | 4.5V @ 1mA | 160A Tc | 253nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTT8P50 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtt8p50-datasheets-3920.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 35 ns | 35 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 500V | 180W Tc | 8A | 32A | -500V | P-Channel | 3400pF @ 25V | 1.2 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFA36N55X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH80N075L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtp80n075l2-datasheets-0936.pdf | TO-247-3 | 28 Weeks | 80A | 75V | 357W Tc | N-Channel | 3600pF @ 25V | 24m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH52N65X | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth52n65x-datasheets-4068.pdf | TO-247-3 | 15 Weeks | 52A | 650V | 660W Tc | N-Channel | 4350pF @ 25V | 68m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXT-1-1N100S1-TR | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOIC | 1.5A | 1000V | N-Channel | 1.5A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH6N90 | IXYS | $1.60 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth6n90-datasheets-4158.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 4.5Ohm | 3 | yes | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 180W | 1 | FET General Purpose Power | Not Qualified | 40ns | 60 ns | 100 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AD | 6A | 24A | 900V | N-Channel | 2600pF @ 25V | 1.8 Ω @ 500mA, 10V | 4.5V @ 250μA | 6A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXFQ80N25X3 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-3P-3, SC-65-3 | 19 Weeks | compliant | 250V | 390W Tc | N-Channel | 5430pF @ 25V | 16m Ω @ 40A, 10V | 4.5V @ 1.5mA | 80A Tc | 83nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR16P60P | IXYS | $10.88 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtr16p60p-datasheets-4244.pdf | ISOPLUS247™ | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 190W Tc | 48A | 0.79Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 790m Ω @ 8A, 10V | 4.5V @ 250μA | 10A Tc | 92nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTH30N50L | IXYS | $77.00 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf | TO-247-3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 10200pF @ 25V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTH13N80 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/ixys-ixth13n80-datasheets-4302.pdf | TO-247-3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 33ns | 32 ns | 63 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 52A | 0.8Ohm | 800V | N-Channel | 4500pF @ 25V | 800m Ω @ 500mA, 10V | 4.5V @ 250μA | 13A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFT320N10T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 100V | 1kW Tc | N-Channel | 26000pF @ 25V | 3.5m Ω @ 100A, 10V | 4V @ 250μA | 320A Tc | 430nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX48N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60p-datasheets-4374.pdf | 600V | 48A | TO-247-3 | Lead Free | 3 | 30 Weeks | 135MOhm | 3 | yes | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 25ns | 22 ns | 85 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 110A | 2000 mJ | 600V | N-Channel | 8860pF @ 25V | 135m Ω @ 500mA, 10V | 5V @ 8mA | 48A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTP64N10L2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 24 Weeks | compliant | 100V | 357W Tc | N-Channel | 3620pF @ 25V | 32m Ω @ 32A, 10V | 4.5V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ40N50Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtq40n50q-datasheets-4447.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 14 ns | 56 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 160A | 0.16Ohm | 2 mJ | 500V | N-Channel | 4500pF @ 25V | 160m Ω @ 500mA, 10V | 4.5V @ 4mA | 40A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| VMO60-05F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-vmo6005f-datasheets-4493.pdf | TO-240AA | Lead Free | 4 | 24 Weeks | 65MOhm | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 4 | NOT SPECIFIED | 590W | 1 | FET General Purpose Power | Not Qualified | 45ns | 30 ns | 250 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 590W Tc | 500V | N-Channel | 12600pF @ 25V | 75m Ω @ 500mA, 10V | 4V @ 24mA | 60A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTX6N200P3HV | IXYS | $60.31 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtx6n200p3hv-datasheets-4592.pdf | TO-247-3 Variant | 24 Weeks | 6A | 2000V | 960W Tc | N-Channel | 3700pF @ 25V | 4 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 143nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX15N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | 1kV | 15A | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 60A | 0.7Ohm | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXTA380N036T4-7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta380n036t47-datasheets-9424.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | compliant | 36V | 480W Tc | N-Channel | 13400pF @ 25V | 1m Ω @ 100A, 10V | 4V @ 250μA | 380A Tc | 260nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP12N70X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | compliant | 700V | 40W Tc | N-Channel | 960pF @ 25V | 300m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP44N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 18 Weeks | 44A | 300V | N-Channel | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA300N04T2-7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t27-datasheets-9958.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 300A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 900A | 0.0025Ohm | 600 mJ | 40V | N-Channel | 10700pF @ 25V | 2.5m Ω @ 50A, 10V | 4V @ 250μA | 300A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTQ18N60P | IXYS | $4.36 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq18n60p-datasheets-0063.pdf | 600V | 18A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 54A | 0.42Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 18A Tc | 49nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTQ160N10T | IXYS | $3.40 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth160n10t-datasheets-2198.pdf | TO-3P-3, SC-65-3 | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Powers | Not Qualified | 61ns | 42 ns | 49 ns | 160A | SILICON | DRAIN | SWITCHING | 430W Tc | 0.007Ohm | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 160A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXKP20N60C5M | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5m-datasheets-0231.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 32 Weeks | 3 | yes | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 33W | 1 | FET General Purpose Power | Not Qualified | 5ns | 5 ns | 50 ns | 7.6A | 20V | SILICON | SWITCHING | TO-220AB | 0.2Ohm | 600V | N-Channel | 1520pF @ 100V | 200m Ω @ 10A, 10V | 3.5V @ 1.1mA | 7.6A Tc | 30nC @ 10V | Super Junction | 10V | ±20V |
