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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Voltage | Isolation Voltage | Turn On Delay Time | RMS Current (Irms) | On-State Current-Max | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Leakage Current (Max) | Threshold Voltage | Diode Element Material | Power Dissipation-Max | Hold Current | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Non-Repetitive Pk On-state Cur | Trigger Device Type | Utilized IC / Part | Repetitive Peak Off-state Voltage | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Voltage - Peak Reverse (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Structure | Number of SCRs, Diodes | Current - Average Rectified (Io) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFK33N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk33n50-datasheets-8544.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 150mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 416W | 1 | FET General Purpose Power | 42ns | 23 ns | 110 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 2500 mJ | 500V | N-Channel | 5700pF @ 25V | 160m Ω @ 16.5A, 10V | 4V @ 4mA | 33A Tc | 227nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR180N07 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n07-datasheets-8644.pdf | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 6MOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 720A | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX14N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 56A | 0.75Ohm | 1kV | N-Channel | 4500pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR25N90 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS247™ | 25A | 900V | N-Channel | 25A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXUC100N055 | IXYS | $18.91 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixuc100n055-datasheets-8776.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 150W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 115ns | 155 ns | 230 ns | 100A | 20V | 55V | SILICON | ISOLATED | SWITCHING | 4V | 150W Tc | TO-273AA | 80 ns | 0.0077Ohm | 500 mJ | 55V | N-Channel | 4 V | 7.7m Ω @ 80A, 10V | 4V @ 1mA | 100A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU2N80P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80p-datasheets-7550.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSIP-T3 | 35ns | 28 ns | 53 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 2A | 4A | 6Ohm | 100 mJ | 800V | N-Channel | 440pF @ 25V | 6 Ω @ 1A, 10V | 5.5V @ 50μA | 2A Tc | 10.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN320N10T | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn320n10t-datasheets-4250.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 320A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 680W Tc | 700A | 0.0032Ohm | 2300 mJ | N-Channel | 4.5V @ 1mA | 320A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH66N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh66n20q-datasheets-4327.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 18ns | 14 ns | 50 ns | 66A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 264A | 0.04Ohm | 1500 mJ | 200V | N-Channel | 3700pF @ 25V | 40m Ω @ 33A, 10V | 4V @ 4mA | 66A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN55N50 | IXYS | $36.98 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | SOT-227-4, miniBLOC | Lead Free | 4 | 6 Weeks | 46g | No SVHC | 80mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 600W | 1 | FET General Purpose Power | R-PUFM-X4 | 2.5kV | 60ns | 45 ns | 120 ns | 55A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4.5V | 625W Tc | 250 ns | 220A | 500V | N-Channel | 9400pF @ 25V | 4.5 V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 55A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN52N90P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn52n90p-datasheets-4549.pdf | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 43A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 890W Tc | 104A | 0.16Ohm | 2000 mJ | N-Channel | 19000pF @ 25V | 160m Ω @ 26A, 10V | 6.5V @ 1mA | 43A Tc | 308nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY12N06TTRL | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixty12n06ttrl-datasheets-8314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | AVALANCHE RATED, ULTRA LOW RESISTANCE | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 33W Tc | TO-252AA | 30A | 0.085Ohm | 20 mJ | N-Channel | 256pF @ 25V | 85m Ω @ 6A, 10V | 4V @ 25μA | 12A Tc | 3.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFJ32N50 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 3 | yes | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 360W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-268AA | 32A | 128A | 0.15Ohm | 1500 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT52N30Q TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft52n30qtrl-datasheets-3306.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 300V | 360W Tc | N-Channel | 5300pF @ 25V | 60m Ω @ 26A, 10V | 4V @ 4mA | 52A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH1799 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM11N80 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-204AA, TO-3 | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 300W Tc | 11A | 44A | 0.95Ohm | N-Channel | 4500pF @ 25V | 950m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM1633 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDD430YI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDD430YI | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVLB001 | IXYS |
Min: 1 Mult: 1 |
download | Opto/Lighting | Box | 1 (Unlimited) | RoHS Compliant | Yes | Ballast Control | IXI859, IXTP3N50P, IXTP02N50D, IXD611S | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA56N30X3 | IXYS | $7.46 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh56n30x3-datasheets-4872.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 300V | 320W Tc | N-Channel | 3.75nF @ 25V | 27m Ω @ 28A, 10V | 4.5V @ 1.5mA | 56A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX32P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtk32p60p-datasheets-0724.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 890W Tc | 96A | P-Channel | 11100pF @ 25V | 350m Ω @ 16A, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP30N25X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy30n25x3-datasheets-4884.pdf | TO-220-3 | 19 Weeks | 250V | 176W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK98N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx98n50p3-datasheets-8690.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | 35 ns | 8ns | 6 ns | 65 ns | 98A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1300W Tc | 245A | 0.05Ohm | 2000 mJ | 500V | N-Channel | 13100pF @ 25V | 50m Ω @ 500mA, 10V | 5V @ 8mA | 98A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH70N20Q3 | IXYS | $10.90 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixft70n20q3-datasheets-4448.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | Lead Free | 3 | 30 Weeks | 40MOhm | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 10ns | 9 ns | 24 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 210A | 1500 mJ | 200V | N-Channel | 3150pF @ 25V | 40m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44P15T-TRL | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtp44p15t-datasheets-5534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 150V | 298W Tc | P-Channel | 13400pF @ 25V | 65m Ω @ 22A, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS16-0045AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | SCHOTTKY | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dss160045as-datasheets-8262.pdf | TO-263-3 | 2 | 3 | yes | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE, LOW NOISE | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 670mV | 280A | 500μA | CATHODE | POWER | SILICON | 105W | 280A | RECTIFIER DIODE | 45V | 16A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS6-0025BS | IXYS | $1.58 |
Min: 1 Mult: 1 |
Surface Mount | Tape and Reel | 150°C | -55°C | SCHOTTKY | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dss60025bs-datasheets-5040.pdf | TO-252-3 | Lead Free | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 470mV | 80A | 6mA | CATHODE | POWER | SILICON | 80A | TO-252AA | RECTIFIER DIODE | 25V | 6A | 1 | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK16-01AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | Common Cathode | 100V | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK28-0045BS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -55°C | SCHOTTKY | RoHS Compliant | TO-263-3 | 2 | 3 | yes | EAR99 | FREEWHEELING DIODE, HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 480mV | 320A | 20mA | GENERAL PURPOSE | SILICON | 90W | 320A | RECTIFIER DIODE | 45V | 15A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VWO35-12HO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2003 | /files/ixys-vwo3512ho7-datasheets-0499.pdf | Module | 12 | 16 Weeks | 8 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | VWO | 12 | NOT SPECIFIED | 6 | TRIACs | Not Qualified | R-XUFM-X12 | 35A | 16000A | 3 BANKS, ANTI-PARALLEL, 2 ELEMENTS | ISOLATED | 5mA | 50mA | 1.2kV | 210 A | SCR | 1200V | 35A | 1.5V | 200A 210A | 65mA | 16A | 3-Phase Controller - All SCRs | 6 SCRs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBO130-14NO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-vbo13014no7-datasheets-2156.pdf | PWS-E1 | 94mm | 30mm | 54mm | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | VBO130 | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 1.65V | 1.8kA | 300μA | ISOLATED | SILICON | 1.95kA | Single Phase | 1 | 1.4kV | 300μA @ 1400V | 1.65V @ 300A | 122A |
