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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MMIX1F230N20T | IXYS | $42.82 |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f230n20t-datasheets-1091.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | R-PDSO-G21 | 58 ns | 62 ns | 168A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | 600W Tc | 630A | 0.0083Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 8.3m Ω @ 60A, 10V | 5V @ 8mA | 168A Tc | 378nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTN21N100 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixtk21n100-datasheets-1027.pdf | 1kV | 21A | SOT-227-4, miniBLOC | Lead Free | 4 | No SVHC | 550mOhm | 3 | EAR99 | unknown | 8541.29.00.95 | UPPER | UNSPECIFIED | 4 | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 50ns | 40 ns | 100 ns | 21A | 20V | 1kV | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 4.5V | 520W Tc | 84A | 1kV | N-Channel | 8400pF @ 25V | 4.5 V | 550m Ω @ 500mA, 10V | 4.5V @ 500μA | 21A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFK60N55Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx60n55q2-datasheets-0940.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 88MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | Not Qualified | 22 ns | 14ns | 9 ns | 57 ns | 60A | 30V | SILICON | DRAIN | 735W Tc | 240A | 4000 mJ | 550V | N-Channel | 7300pF @ 25V | 88m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTP2N80 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80-datasheets-9546.pdf | TO-220-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 54W | 1 | Not Qualified | 18ns | 15 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 54W Tc | TO-220AB | 2A | 8A | 200 mJ | 800V | N-Channel | 440pF @ 25V | 6.2 Ω @ 500mA, 10V | 5.5V @ 250μA | 2A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTA110N055T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta110n055t7-datasheets-1667.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSFM-G6 | 30ns | 24 ns | 40 ns | 110A | SILICON | DRAIN | SWITCHING | 230W Tc | 112A | 300A | 0.007Ohm | 750 mJ | 55V | N-Channel | 3080pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 100μA | 110A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTA102N15T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 150V | 455W Tc | N-Channel | 5220pF @ 25V | 18m Ω @ 51A, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R4N120P | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n120p-datasheets-4117.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | FET General Purpose Power | 1.4A | Single | 86W | 1200V | N-Channel | 4.5V @ 100μA | 1.4A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA340N04T4-7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta340n04t4-datasheets-9966.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | yes | unknown | 340A | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44N25T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 44A | 250V | N-Channel | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP170N075T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta170n075t2-datasheets-2178.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 11ns | 19 ns | 25 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 510A | 0.0054Ohm | 600 mJ | 75V | N-Channel | 6860pF @ 25V | 5.4m Ω @ 50A, 10V | 4V @ 250μA | 170A Tc | 109nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA76N25T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 250V | 460W Tc | N-Channel | 4500pF @ 25V | 39m Ω @ 38A, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R4N120PHV | IXYS | $3.45 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n120p-datasheets-9773.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1200V | 86W Tc | N-Channel | 666pF @ 25V | 13 Ω @ 700mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA80N10T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 100V | 230W Tc | N-Channel | 3040pF @ 25V | 14m Ω @ 25A, 10V | 5V @ 100μA | 80A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU01N80 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n80-datasheets-3285.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 25W Tc | 0.1A | 0.4A | 800V | N-Channel | 60pF @ 25V | 50 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTP80N12T2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 120V | 325W Tc | TO-220AB | 80A | 200A | 0.017Ohm | 400 mJ | N-Channel | 4740pF @ 25V | 17m Ω @ 40A, 10V | 4.5V @ 100μA | 80A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTC26N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc26n50p-datasheets-5775.pdf | 500V | 26A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 130W Tc | 78A | 0.26Ohm | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 260m Ω @ 13A, 10V | 5.5V @ 250μA | 15A Tc | 65nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTP6N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta6n50p-datasheets-5823.pdf | 500V | 6A | TO-220-3 | Lead Free | 8 Weeks | 3 | Single | 100W | TO-220AB | 740pF | 28ns | 26 ns | 65 ns | 6A | 30V | 500V | 100W Tc | 1.1Ohm | 500V | N-Channel | 740pF @ 25V | 1.1Ohm @ 3A, 10V | 5V @ 50μA | 6A Tc | 14.6nC @ 10V | 1.1 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV26N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFV26N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n50p-datasheets-9078.pdf | 500V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 4mA | 26A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFQ26N50Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-3P-3, SC-65-3 | 3 | yes | AVALANCHE RATED | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 104A | 0.2Ohm | 1500 mJ | N-Channel | 26A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV16N80PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh16n80p-datasheets-7014.pdf | PLUS-220SMD | 2 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 32ns | 29 ns | 75 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 5V | 460W Tc | 0.6Ohm | 1000 mJ | 800V | N-Channel | 4600pF @ 25V | 600m Ω @ 500mA, 10V | 5V @ 4mA | 16A Tc | 71nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFX24N100 | IXYS | $15.45 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfx24n100-datasheets-7466.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 390mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 35ns | 21 ns | 75 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 560W Tc | 96A | 1kV | N-Channel | 8700pF @ 25V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 267nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA88N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta88n085t-datasheets-7513.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSSO-G2 | 54ns | 29 ns | 42 ns | 88A | SILICON | DRAIN | SWITCHING | 230W Tc | 240A | 0.011Ohm | 500 mJ | 85V | N-Channel | 3140pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 100μA | 88A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTC180N10T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtc230n085t-datasheets-7537.pdf | ISOPLUS220™ | 3 | Single | 150W | ISOPLUS220™ | 90A | 100V | 150W Tc | 7mOhm | 100V | N-Channel | 90A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP200N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n085t-datasheets-7501.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-T3 | 80ns | 64 ns | 65 ns | 200A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-220AB | 540A | 0.005Ohm | 1000 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTP50N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp50n085t-datasheets-7614.pdf | TO-220-3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | R-PSFM-T3 | 32ns | 33 ns | 38 ns | 50A | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 130A | 0.023Ohm | 250 mJ | 85V | N-Channel | 1460pF @ 25V | 23m Ω @ 25A, 10V | 4V @ 25μA | 50A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTU1R4N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60p-datasheets-5843.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSIP-T3 | 16ns | 16 ns | 25 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 50W Tc | 2.1A | 9Ohm | 75 mJ | 600V | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTV230N085TS | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv230n085t-datasheets-7645.pdf | PLUS-220SMD | 2 | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSSO-G2 | 49ns | 39 ns | 56 ns | 230A | SILICON | DRAIN | SWITCHING | 550W Tc | 520A | 0.0044Ohm | 1000 mJ | 85V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 187nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP98N075T | IXYS | $0.33 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta98n075t-datasheets-7554.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | 42ns | 27 ns | 42 ns | 98A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 280A | 10mOhm | 600 mJ | 75V | N-Channel | 4V @ 100μA | 98A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN26N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn26n90-datasheets-5292.pdf | 900V | 26A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 44g | No SVHC | 300mOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 35ns | 24 ns | 130 ns | 26A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 600W Tc | 104A | 900V | N-Channel | 10800pF @ 25V | 5 V | 300m Ω @ 13A, 10V | 5V @ 8mA | 26A Tc | 240nC @ 10V | 10V | ±20V |
