IXYS(5222)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Technology Operating Mode RoHS Status Published Datasheet Voltage - Rated DC Current Rating Package / Case Length Height Width Lead Free Number of Terminations Factory Lead Time Resistance Number of Pins Pbfree Code ECCN Code Additional Feature Radiation Hardening Reach Compliance Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Pin Count Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory Qualification Status JESD-30 Code Turn On Delay Time Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Transistor Element Material Configuration Case Connection Transistor Application Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min Power Dissipation-Max JEDEC-95 Code Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Drain-source On Resistance-Max Avalanche Energy Rating (Eas) Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXFR26N50 IXFR26N50 IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2000 https://pdf.utmel.com/r/datasheets/ixys-ixfr24n50-datasheets-4223.pdf ISOPLUS247™ 3 3 yes AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 250W 1 FET General Purpose Power Not Qualified 33ns 30 ns 65 ns 26A 20V SILICON ISOLATED SWITCHING 250W Tc 24A 104A 0.2Ohm 500V N-Channel 4200pF @ 25V 200m Ω @ 13A, 10V 4V @ 4mA 26A Tc 160nC @ 10V 10V ±20V
IXFH60N60X IXFH60N60X IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant 2015 https://pdf.utmel.com/r/datasheets/ixys-ixfh60n60x-datasheets-4330.pdf TO-247-3 19 Weeks 60A 600V 890W Tc N-Channel 5800pF @ 25V 55m Ω @ 30A, 10V 4.5V @ 8mA 60A Tc 143nC @ 10V 10V ±30V
IXTQ30N50L IXTQ30N50L IXYS
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download Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2007 https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf TO-3P-3, SC-65-3 3 24 Weeks yes e3 Matte Tin (Sn) SINGLE NOT SPECIFIED 3 NOT SPECIFIED 1 Not Qualified R-PSFM-T3 30A SILICON SINGLE WITH BUILT-IN DIODE AND RESISTOR DRAIN SWITCHING 500V 500V 400W Tc 60A 0.2Ohm 1500 mJ N-Channel 10200pF @ 25V 200m Ω @ 15A, 10V 4.5V @ 250μA 30A Tc 240nC @ 10V 10V ±20V
IXTR200N10P IXTR200N10P IXYS $14.87
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download HiPerFET™, PolarP2™ Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2006 https://pdf.utmel.com/r/datasheets/ixys-ixtr200n10p-datasheets-4384.pdf ISOPLUS247™ Lead Free 3 28 Weeks 3 yes EAR99 AVALANCHE RATED, UL RECOGNIZED e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 300W 1 Not Qualified 35ns 90 ns 150 ns 120A 20V SILICON ISOLATED SWITCHING 300W Tc 400A 0.008Ohm 4000 mJ 100V N-Channel 7600pF @ 25V 8m Ω @ 60A, 10V 5V @ 500μA 120A Tc 235nC @ 10V 10V ±20V
IXFR24N90P IXFR24N90P IXYS
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download HiPerFET™, PolarP2™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixfr24n90p-datasheets-4422.pdf ISOPLUS247™ 3 30 Weeks yes UL RECOGNIZED, AVALANCHE RATED unknown e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED 3 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSIP-T3 13A SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING 900V 900V 230W Tc 48A 0.46Ohm 1000 mJ N-Channel 7200pF @ 25V 460m Ω @ 12A, 10V 6.5V @ 1mA 13A Tc 130nC @ 10V 10V ±30V
IXFH150N20T IXFH150N20T IXYS $69.00
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download HiPerFET™, TrenchT2™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2011 https://pdf.utmel.com/r/datasheets/ixys-ixfh150n20t-datasheets-4462.pdf TO-247-3 3 30 Weeks EAR99 AVALANCHE RATED SINGLE 3 1 FET General Purpose Power R-PSFM-T3 150A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 200V 200V 890W Tc TO-247AD 375A 0.015Ohm 1500 mJ N-Channel 11700pF @ 25V 15m Ω @ 75A, 10V 5V @ 4mA 150A Tc 177nC @ 10V 10V ±20V
MCB60I1200TZ-TUB MCB60I1200TZ-TUB IXYS
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download Surface Mount -40°C~175°C TJ SiCFET (Silicon Carbide) TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 20 Weeks 1.2kV N-Channel 2790pF @ 1000V 34m Ω @ 50A, 20V 4V @ 15mA 90A Tc 160nC @ 20V 20V +20V, -5V
IXFH13N50 IXFH13N50 IXYS $3.79
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube Not Applicable MOSFET (Metal Oxide) ENHANCEMENT MODE RoHS Compliant 2000 https://pdf.utmel.com/r/datasheets/ixys-ixfh13n50-datasheets-7571.pdf 500V 13A TO-247-3 Lead Free 3 3 AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 180W 1 FET General Purpose Power Not Qualified 27ns 32 ns 76 ns 13A 20V SILICON DRAIN SWITCHING 180W Tc 52A 0.4Ohm 500V N-Channel 2800pF @ 25V 400m Ω @ 6.5A, 10V 4V @ 2.5mA 13A Tc 120nC @ 10V 10V ±20V
IXTY26P10T IXTY26P10T IXYS $1.42
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download TrenchP™ Surface Mount Surface Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2012 https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf TO-252-3, DPak (2 Leads + Tab), SC-63 Lead Free 2 24 Weeks EAR99 AVALANCHE RATED No SINGLE GULL WING 4 150W 1 Other Transistors R-PSSO-G2 26A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 100V 150W Tc 80A 0.09Ohm 300 mJ P-Channel 3820pF @ 25V 90m Ω @ 13A, 10V 4.5V @ 250μA 26A Tc 52nC @ 10V 10V ±15V
IXFA7N100P-TRL IXFA7N100P-TRL IXYS
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download Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 30 Weeks 1000V 300W Tc N-Channel 2590pF @ 25V 1.9 Ω @ 3.5A, 10V 6V @ 1mA 7A Tc 47nC @ 10V 10V ±30V
IXFA180N10T2-TRL IXFA180N10T2-TRL IXYS
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download Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 30 Weeks 100V 480W Tc N-Channel 10500pF @ 25V 6m Ω @ 50A, 10V 4V @ 250μA 180A Tc 185nC @ 10V 10V ±20V
IXFP36N20X3M IXFP36N20X3M IXYS $3.89
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download HiPerFET™ Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant https://pdf.utmel.com/r/datasheets/ixys-ixfp36n20x3m-datasheets-9803.pdf TO-220-3 Full Pack, Isolated Tab 19 Weeks 200V 36W Tc N-Channel 1425pF @ 25V 45m Ω @ 18A, 10V 4.5V @ 500μA 36A Tc 21nC @ 10V 10V ±20V
IXTA1R4N120P IXTA1R4N120P IXYS $5.00
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download Polar™ Surface Mount Surface Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2012 https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n120p-datasheets-9773.pdf TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Lead Free 2 28 Weeks 13Ohm yes AVALANCHE RATED e3 Matte Tin (Sn) GULL WING NOT SPECIFIED 4 Single NOT SPECIFIED 86W 1 FET General Purpose Power Not Qualified R-PSSO-G2 27ns 29 ns 78 ns 1.4A 20V SILICON DRAIN SWITCHING 1200V 86W Tc 3A 1.2kV N-Channel 666pF @ 25V 13 Ω @ 500mA, 10V 4.5V @ 100μA 1.4A Tc 24.8nC @ 10V 10V ±20V
IXFP270N06T3 IXFP270N06T3 IXYS
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download HiperFET™, TrenchT3™ Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant 2016 https://pdf.utmel.com/r/datasheets/ixys-ixfh270n06t3-datasheets-1458.pdf TO-220-3 26 Weeks yes unknown 270mA 60V 480W Tc N-Channel 12600pF @ 25V 3.1m Ω @ 100A, 10V 4V @ 250μA 270A Tc 200nC @ 10V 10V ±20V
IXTA3N120-TRR IXTA3N120-TRR IXYS
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download Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 28 Weeks 1200V 200W Tc N-Channel 1350pF @ 25V 4.5 Ω @ 1.5A, 10V 5V @ 250μA 3A Tc 42nC @ 10V 10V ±20V
IXFP20N50P3 IXFP20N50P3 IXYS $4.21
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download HiPerFET™, Polar3™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2013 https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf TO-220-3 3 8 Weeks AVALANCHE RATED SINGLE 3 1 FET General Purpose Power R-PSFM-T3 8A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 500V 500V 380W Tc TO-220AB 20A 40A 0.3Ohm 300 mJ N-Channel 1800pF @ 25V 300m Ω @ 10A, 10V 5V @ 1.5mA 8A Tc 36nC @ 10V 10V ±30V
IXKP20N60C5 IXKP20N60C5 IXYS
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download CoolMOS™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5-datasheets-0375.pdf TO-220-3 3 3 yes NOT SPECIFIED 3 Single NOT SPECIFIED 208W 1 FET General Purpose Power Not Qualified 5ns 5 ns 50 ns 20A 20V SILICON DRAIN SWITCHING TO-220AB 0.2Ohm 600V N-Channel 1520pF @ 100V 200m Ω @ 10A, 10V 3.5V @ 1.1mA 20A Tc 45nC @ 10V Super Junction 10V ±20V
IXKH20N60C5 IXKH20N60C5 IXYS
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download CoolMOS™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5-datasheets-0375.pdf TO-3P-3 Full Pack 3 32 Weeks yes AVALANCHE RATED NOT SPECIFIED 3 Single NOT SPECIFIED 208W 1 FET General Purpose Power Not Qualified R-PSFM-T3 5ns 5 ns 50 ns 20A 20V SILICON DRAIN SWITCHING TO-247AD 0.2Ohm 435 mJ 600V N-Channel 1520pF @ 100V 200m Ω @ 10A, 10V 3.5V @ 1.1mA 20A Tc 45nC @ 10V 10V ±20V
IXTP300N04T2 IXTP300N04T2 IXYS
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download TrenchT2™ Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t2-datasheets-9952.pdf TO-220-3 3 17 Weeks yes EAR99 AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED 3 NOT SPECIFIED 480W 1 FET General Purpose Power Not Qualified R-PSFM-T3 300A 20V SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 40V 40V 480W Tc TO-220AB 900A 0.0025Ohm 600 mJ N-Channel 10700pF @ 25V 2.5m Ω @ 500mA, 10V 4V @ 250μA 300A Tc 145nC @ 10V 10V ±20V
IXTQ102N20T IXTQ102N20T IXYS $6.68
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download TrenchHV™ Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 TO-3P-3, SC-65-3 3 10 Weeks 3 yes EAR99 AVALANCHE RATED e3 Matte Tin (Sn) NOT SPECIFIED 3 Single NOT SPECIFIED 750W 1 FET General Purpose Power Not Qualified 26ns 25 ns 50 ns 102A 30V SILICON DRAIN SWITCHING 750W Tc 250A 1200 mJ 200V N-Channel 6800pF @ 25V 23m Ω @ 500mA, 10V 4.5V @ 1mA 102A Tc 114nC @ 10V
IXFH16N50P3 IXFH16N50P3 IXYS $7.22
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download HiPerFET™, Polar3™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2013 https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p3-datasheets-3145.pdf TO-247-3 16.26mm 21.46mm 5.3mm 3 20 Weeks 3 AVALANCHE RATED Single 1 FET General Purpose Power 19 ns 44 ns 16A 30V SILICON DRAIN SWITCHING 500V 500V 330W Tc TO-247AD 40A N-Channel 1515pF @ 25V 360m Ω @ 8A, 10V 5V @ 2.5mA 16A Tc 29nC @ 10V 10V ±30V
IXFT150N20T IXFT150N20T IXYS
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download HiPerFET™, TrenchT2™ Surface Mount Surface Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2011 https://pdf.utmel.com/r/datasheets/ixys-ixfh150n20t-datasheets-4462.pdf TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Lead Free 2 26 Weeks EAR99 AVALANCHE RATED not_compliant e3 Matte Tin (Sn) SINGLE GULL WING 4 1 FET General Purpose Power R-PSSO-G2 150A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 200V 200V 890W Tc 375A 0.015Ohm 1500 mJ N-Channel 11700pF @ 25V 15m Ω @ 75A, 10V 5V @ 4mA 150A Tc 177nC @ 10V 10V ±20V
IXTA230N075T2 IXTA230N075T2 IXYS $24.46
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download TrenchT2™ Surface Mount Surface Mount -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixtp230n075t2-datasheets-0641.pdf TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 2 28 Weeks yes EAR99 AVALANCHE RATED not_compliant e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED 4 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSSO-G2 230A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 75V 75V 480W Tc 700A 0.0042Ohm 850 mJ N-Channel 10500pF @ 25V 4.2m Ω @ 50A, 10V 4V @ 250μA 230A Tc 178nC @ 10V 10V ±20V
IXTR32P60P IXTR32P60P IXYS
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download PolarP™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixtr32p60p-datasheets-0703.pdf ISOPLUS247™ 3 28 Weeks yes AVALANCHE RATED, UL RECOGNIZED unknown e1 TIN SILVER COPPER SINGLE NOT SPECIFIED 3 NOT SPECIFIED 1 Other Transistors Not Qualified R-PSIP-T3 18A SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING 600V 600V 310W Tc 96A 0.385Ohm 3500 mJ P-Channel 11100pF @ 25V 385m Ω @ 16A, 10V 4V @ 1mA 18A Tc 196nC @ 10V 10V ±20V
IXTK180N15 IXTK180N15 IXYS
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download MegaMOS™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixtk180n15-datasheets-0743.pdf TO-264-3, TO-264AA Lead Free 3 9MOhm 3 yes NOT SPECIFIED 3 Single NOT SPECIFIED 730W 1 FET General Purpose Power Not Qualified 40ns 35 ns 120 ns 180A 20V SILICON DRAIN SWITCHING 730W Tc 720A 150V N-Channel 7000pF @ 25V 9m Ω @ 500mA, 10V 4V @ 250μA 180A Tc 240nC @ 10V 10V ±20V
IXFX250N10P IXFX250N10P IXYS
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download HiPerFET™, PolarP2™ Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2010 https://pdf.utmel.com/r/datasheets/ixys-ixfx250n10p-datasheets-0776.pdf TO-247-3 3 30 Weeks yes EAR99 AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED 3 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSIP-T3 250A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 100V 100V 1250W Tc 700A 0.0065Ohm 3000 mJ N-Channel 16000pF @ 25V 6.5m Ω @ 50A, 10V 5V @ 1mA 250A Tc 205nC @ 10V 10V ±20V
IXFK20N120 IXFK20N120 IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120-datasheets-0789.pdf TO-264-3, TO-264AA 19.96mm 26.16mm 5.13mm Lead Free 3 3 yes unknown NOT SPECIFIED 3 Single NOT SPECIFIED 780W 1 Not Qualified 25 ns 45ns 20 ns 75 ns 20A 30V SILICON DRAIN SWITCHING 1200V 780W Tc 80A 0.75Ohm 2000 mJ 1.2kV N-Channel 7400pF @ 25V 750m Ω @ 500mA, 10V 4.5V @ 8mA 20A Tc 160nC @ 10V 10V ±30V
FDM47-06KC5 FDM47-06KC5 IXYS
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download CoolMOS™, HiPerDyn™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2009 https://pdf.utmel.com/r/datasheets/ixys-fmd4706kc5-datasheets-0824.pdf ISOPLUSi5-Pak™ 5 yes UL RECOGNIZED, AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED 5 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSIP-T5 47A SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING 600V 600V 0.045Ohm 1950 mJ N-Channel 6800pF @ 100V 45m Ω @ 44A, 10V 3.5V @ 3mA 47A Tc 190nC @ 10V 10V ±20V
IXFL44N100P IXFL44N100P IXYS
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download HiPerFET™, PolarP2™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixfl44n100p-datasheets-0904.pdf ISOPLUS264™ 3 26 Weeks 3 yes AVALANCHE RATED NOT SPECIFIED 3 Single NOT SPECIFIED 357W 1 FET General Purpose Power Not Qualified 68ns 54 ns 90 ns 22A 30V SILICON ISOLATED SWITCHING 1000V 357W Tc 110A 0.24Ohm 2000 mJ 1kV N-Channel 19000pF @ 25V 240m Ω @ 22A, 10V 6.5V @ 1mA 22A Tc 305nC @ 10V 10V ±30V
IXFN100N20 IXFN100N20 IXYS
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download HiPerFET™ Chassis Mount Chassis Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2000 https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf SOT-227-4, miniBLOC Lead Free 4 23MOhm 4 yes EAR99 AVALANCHE RATED Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED 4 NOT SPECIFIED 520W 1 Not Qualified 80ns 30 ns 75 ns 100A 20V SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING 520W Tc 200V N-Channel 9000pF @ 25V 23m Ω @ 500mA, 10V 4V @ 8mA 100A Tc 380nC @ 10V 10V ±20V

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