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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA20N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 650V | 290W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA230N075T2-7 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfa230n075t27-datasheets-0434.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 26 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 7 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 1mA | 230A Tc | 178nC @ 10V | 10V | |||||||||||||||||||||||||||||||||
| IXTH86N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 30 Weeks | TO-247 (IXTH) | 86A | 200V | N-Channel | 86A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ96N15P | IXYS | $28.78 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt96n15p-datasheets-3824.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 33ns | 18 ns | 66 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.024Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 250μA | 96A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFH70N30Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 30 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | 33 ns | 250ns | 38 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | TO-247AD | 210A | 0.054Ohm | 1500 mJ | 300V | N-Channel | 4735pF @ 25V | 54m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTR102N65X2 | IXYS | $16.81 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtr102n65x2-datasheets-0625.pdf | ISOPLUS247™ | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 54A | 650V | 330W Tc | N-Channel | 10900pF @ 25V | 33m Ω @ 51A, 10V | 5V @ 250μA | 54A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT44N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh44n50q3-datasheets-0657.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 830W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 250ns | 37 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.14Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 140m Ω @ 22A, 10V | 6.5V @ 4mA | 44A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFR90N20 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | ISOPLUS247™ | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200V | 200V | 0.022Ohm | N-Channel | 90A Tc | |||||||||||||||||||||||||||||||||||||||||||||
| IXFK73N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx73n30q-datasheets-0740.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 36ns | 12 ns | 82 ns | 73A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 292A | 0.045Ohm | 2500 mJ | 300V | N-Channel | 5400pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 4mA | 73A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFK250N10P | IXYS | $23.33 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfx250n10p-datasheets-0776.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 250A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1250W Tc | 700A | 0.0065Ohm | N-Channel | 16000pF @ 25V | 6.5m Ω @ 50A, 10V | 5V @ 1mA | 250A Tc | 205nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTR140P10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr140p10t-datasheets-0821.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 270W Tc | 90A | 400A | 0.013Ohm | 2000 mJ | P-Channel | 31400pF @ 25V | 13m Ω @ 70A, 10V | 4V @ 250μA | 110A Tc | 400nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| IXFK21N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk21n100q-datasheets-0857.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 500W Tc | 84A | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 6900pF @ 25V | 500m Ω @ 10.5A, 10V | 5.5V @ 4mA | 21A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTH44N25L2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 28 Weeks | compliant | 250V | 400W Tc | N-Channel | 5740pF @ 25V | 75m Ω @ 22A, 10V | 4.5V @ 250μA | 44A Tc | 256nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK26N100P | IXYS | $27.65 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfx26n100p-datasheets-0938.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 45ns | 50 ns | 72 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 780W Tc | 26A | 65A | 0.39Ohm | 1kV | N-Channel | 11900pF @ 25V | 390m Ω @ 13A, 10V | 6.5V @ 1mA | 26A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFZ140N25T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfz140n25t-datasheets-0985.pdf | DE475 | 6 | 26 Weeks | 475 | yes | EAR99 | AVALANCHE RATED | unknown | DUAL | FLAT | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDFP-F6 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 445W Tc | 400A | 0.017Ohm | 3000 mJ | N-Channel | 19000pF @ 25V | 17m Ω @ 60A, 10V | 5V @ 4mA | 100A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFR26N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n100p-datasheets-1022.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 290W | 1 | FET General Purpose Power | Not Qualified | 45ns | 50 ns | 72 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 290W Tc | 65A | 1000 mJ | 1kV | N-Channel | 11900pF @ 25V | 430m Ω @ 13A, 10V | 6.5V @ 1mA | 15A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFL70N60Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfl70n60q2-datasheets-1055.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | 3 | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26 ns | 25ns | 12 ns | 60 ns | 37A | 30V | SILICON | ISOLATED | SWITCHING | 360W Tc | 280A | 0.092Ohm | 5000 mJ | 600V | N-Channel | 12000pF @ 25V | 92m Ω @ 35A, 10V | 5.5V @ 8mA | 37A Tc | 265nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXFE48N50QD2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 192A | 0.11Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 41A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFL32N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfl32n120p-datasheets-1127.pdf | ISOPLUSi5-Pak™ | 20.29mm | 26.42mm | 5.21mm | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 70 ns | 62ns | 51 ns | 88 ns | 24A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 520W Tc | 100A | 2000 mJ | 1.2kV | N-Channel | 21000pF @ 25V | 340m Ω @ 16A, 10V | 6.5V @ 1mA | 24A Tc | 360nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTF2N300P3 | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtf2n300p3-datasheets-1168.pdf | ISOPLUSi5-Pak™ | 28 Weeks | compliant | 3000V | 160W Tc | N-Channel | 1890pF @ 25V | 21 Ω @ 1A, 10V | 5V @ 250μA | 1.6A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN90P20P | IXYS | $32.83 |
Min: 1 Mult: 1 |
download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtn90p20p-datasheets-1418.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | 38.000013g | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 890W Tc | 270A | 0.044Ohm | 3500 mJ | P-Channel | 12000pF @ 25V | 44m Ω @ 500mA, 10V | 4V @ 1mA | 90A Tc | 205nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTA50N20P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 200V | 360W Tc | N-Channel | 2720pF @ 25V | 60m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ28N15P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtq28n15p-datasheets-1812.pdf | TO-3P-3, SC-65-3 | TO-3P | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N120P | IXYS | $3.37 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp08n120p-datasheets-2050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 55 ns | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1200V | 50W Tc | 0.8A | 80 mJ | 1.2kV | N-Channel | 333pF @ 25V | 25 Ω @ 500mA, 10V | 4.5V @ 50μA | 800mA Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTA170N075T2 | IXYS | $19.60 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta170n075t2-datasheets-2178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | Single | 360W | TO-263 (IXTA) | 6.86nF | 11ns | 19 ns | 25 ns | 170A | 20V | 75V | 360W Tc | 5.4mOhm | 75V | N-Channel | 6860pF @ 25V | 5.4mOhm @ 50A, 10V | 4V @ 250μA | 170A Tc | 109nC @ 10V | 5.4 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA74N15T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 74A | 150V | N-Channel | 74A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP26P10T | IXYS | $1.70 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 150W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15ns | 1 ns | 37 ns | 26A | 15V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 80A | 0.09Ohm | 300 mJ | 100V | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||
| IXTA86N20T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 200V | 550W Tc | N-Channel | 4500pF @ 25V | 33m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY26P10T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | TO-252 | 100V | 150W Tc | P-Channel | 3820pF @ 25V | 90mOhm @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 114W Tc | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V |
