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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFN52N100X | IXYS | $44.83 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn52n100x-datasheets-5729.pdf | SOT-227-4, miniBLOC | 19 Weeks | 1000V | 830W Tc | N-Channel | 6725pF @ 25V | 125m Ω @ 26A, 10V | 6V @ 4mA | 44A Tc | 245nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N50D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 24 Weeks | 500V | 60W Tc | N-Channel | 312pF @ 25V | 4.6 Ω @ 400mA, 0V | 4.5V @ 25μA | 800mA Tj | 12.7nC @ 5V | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR64N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n60p-datasheets-7109.pdf | 600V | 64A | ISOPLUS247™ | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | R-PSIP-T3 | 28 ns | 23ns | 24 ns | 79 ns | 36A | 30V | SILICON | ISOLATED | SWITCHING | 320W Tc | 3500 mJ | 600V | N-Channel | 12000pF @ 25V | 105m Ω @ 32A, 10V | 5V @ 8mA | 36A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| IXTN210P10T | IXYS | $41.54 |
Min: 1 Mult: 1 |
download | TrenchP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtn210p10t-datasheets-7268.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | R-PUFM-X4 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 830W Tc | 800A | 0.0075Ohm | 3000 mJ | P-Channel | 69500pF @ 25V | 7.5m Ω @ 105A, 10V | 4.5V @ 250μA | 210A Tc | 740nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||
| IXFH22N50P | IXYS | $2.82 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n50p-datasheets-1343.pdf | 500V | 22A | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 350W | 1 | FET General Purpose Power | R-PSFM-T3 | 25ns | 21 ns | 72 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | TO-247AD | 55A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 2.5mA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| IXTH50P10 | IXYS | $10.97 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth50p10-datasheets-2723.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | Other Transistors | 39ns | 38 ns | 86 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | TO-247AD | 200A | 0.055Ohm | -100V | P-Channel | 4350pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXTY2N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 86W Tc | N-Channel | 655pF @ 25V | 7.5 Ω @ 1A, 10V | 4.5V @ 100μA | 2A Tc | 24.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R4N100PTRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 63W Tc | N-Channel | 450pF @ 25V | 11.8 Ω @ 700mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA05N100HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta05n100hv-datasheets-3022.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 750mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 40W Tc | 0.75A | 3A | 100 mJ | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFT50N50P3 | IXYS | $9.93 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixft50n50p3-datasheets-9577.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 26 Weeks | 3 | unknown | e3 | Matte Tin (Sn) | Single | 25 ns | 53 ns | 50A | 30V | 500V | 960W Tc | N-Channel | 4335pF @ 25V | 120m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFK220N20X3 | IXYS | $16.18 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-264-3, TO-264AA | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N100P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n100p-datasheets-3750.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 220MOhm | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 68ns | 54 ns | 90 ns | 37A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 890W Tc | 110A | 2000 mJ | 1kV | N-Channel | 19000pF @ 25V | 220m Ω @ 22A, 10V | 6.5V @ 1mA | 37A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| IXTA3N150HV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1500V | 250W Tc | N-Channel | 1375pF @ 25V | 7.3 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 38.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ120N15P | IXYS | $4.15 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt120n15p-datasheets-7098.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 42ns | 26 ns | 85 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 260A | 0.016Ohm | 2000 mJ | 150V | N-Channel | 4900pF @ 25V | 16m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXFT14N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft14n80p-datasheets-3875.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 14A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 400W Tc | 0.72Ohm | 500 mJ | N-Channel | 3900pF @ 25V | 720m Ω @ 500mA, 10V | 5.5V @ 4mA | 14A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXTQ130N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-3P-3, SC-65-3 | 26 Weeks | compliant | 200V | 830W Tc | N-Channel | 8800pF @ 25V | 16m Ω @ 65A, 10V | 5V @ 1mA | 130A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH4N150 | IXYS | $28.45 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth4n150-datasheets-3936.pdf | TO-247-3 | 3 | 3 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 280W Tc | 4A | 12A | 6Ohm | 350 mJ | N-Channel | 1576pF @ 25V | 6 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 44.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFP130N15X3 | IXYS | $9.13 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n15x3-datasheets-3968.pdf | TO-220-3 | 19 Weeks | compliant | 150V | 390W Tc | N-Channel | 5230pF @ 25V | 9m Ω @ 65A, 10V | 4.5V @ 1.5mA | 130A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT26N60P | IXYS | $13.11 |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||
| IXFT80N30P3 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | TO-268 | 14 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH9N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfh9n80q-datasheets-4148.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | 20ns | 13 ns | 42 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 9A | 700 mJ | 800V | N-Channel | 2200pF @ 25V | 1.1 Ω @ 500mA, 10V | 5V @ 2.5mA | 9A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH6N120 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n120-datasheets-4191.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 33ns | 18 ns | 42 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 300W Tc | TO-247AD | 6A | 24A | 500 mJ | 1.2kV | N-Channel | 1950pF @ 25V | 2.6 Ω @ 3A, 10V | 5V @ 2.5mA | 6A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFR24N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n50-datasheets-4223.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 24A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 22A | 96A | 500V | N-Channel | 4200pF @ 25V | 230m Ω @ 12A, 10V | 4V @ 4mA | 24A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFT15N100Q3-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 1000V | 690W Tc | N-Channel | 3250pF @ 25V | 1.05 Ω @ 7.5A, 10V | 6.5V @ 4mA | 15A Tc | 64nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK74N50P2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk74n50p2-datasheets-4293.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.4kW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 74A | 30V | SILICON | DRAIN | SWITCHING | 1400W Tc | 185A | 0.077Ohm | 3000 mJ | 500V | N-Channel | 9900pF @ 25V | 77m Ω @ 500mA, 10V | 5V @ 4mA | 74A Tc | 165nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFQ60N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n60x-datasheets-4330.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 60A | 600V | 890W Tc | N-Channel | 5800pF @ 25V | 55m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 143nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT40N50L2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 24 Weeks | 500V | 540W Tc | N-Channel | 10400pF @ 25V | 170m Ω @ 20A, 10V | 4.5V @ 250μA | 40A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR13N50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 13A | 500V | N-Channel | 13A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH30N50 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50-datasheets-4431.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 42ns | 26 ns | 110 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 120A | 0.17Ohm | 500V | N-Channel | 5680pF @ 25V | 170m Ω @ 500mA, 10V | 4V @ 250μA | 30A Tc | 227nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFX120N30P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk120n30p3-datasheets-1840.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 30 Weeks | 247 | Single | 26 ns | 60 ns | 120A | 20V | 300V | 1130W Tc | N-Channel | 8630pF @ 25V | 27m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 150nC @ 10V | 10V | ±20V |
