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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Current | Forward Current | Forward Voltage | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Speed | Voltage - Isolation | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Reverse Voltage (DC) | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Voltage - Peak Reverse (Max) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Capacitance - Input |
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| IXFD23N60Q-72 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | Die | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 0.35Ohm | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM1712 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM50N20 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth50n20-datasheets-4268.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | 50A | 200A | 0.045Ohm | N-Channel | 4600pF @ 25V | 45m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EV6R11S3 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ev6r11s6-datasheets-5884.pdf | Yes | Half H-Bridge Driver (External FET) | IX6R11S3 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVLB002 | IXYS |
Min: 1 Mult: 1 |
download | Opto/Lighting | Box | 1 (Unlimited) | RoHS Compliant | 2012 | Yes | Ballast Control | IXI859, IXTP3N50P, IXD611S | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP6N50D2 | IXYS | $6.21 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixta6n50d2-datasheets-1686.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | TO-220AB | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX100N65X2 | IXYS | $74.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfx100n65x2-datasheets-8750.pdf | TO-247-3 | 19 Weeks | unknown | 100A | 650V | 1040W Tc | N-Channel | 11300pF @ 25V | 30m Ω @ 50A, 10V | 5.5V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP130N10T | IXYS | $1.66 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n10t-datasheets-0932.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 47ns | 28 ns | 44 ns | 130A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 0.0091Ohm | 500 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ72N30X3 | IXYS | $10.44 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN220N20X3 | IXYS | $32.16 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/ixys-ixfn220n20x3-datasheets-2491.pdf | SOT-227-4, miniBLOC | 19 Weeks | 200V | 390W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 160A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA38N30X3 | IXYS | $4.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp38n30x3-datasheets-4130.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 300V | 240W Tc | N-Channel | 2240pF @ 25V | 50m Ω @ 19A, 10V | 4.5V @ 1mA | 38A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK5N250 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtx5n250-datasheets-4542.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2500V | 2500V | 960W Tc | 5A | 20A | 2500 mJ | N-Channel | 8560pF @ 25V | 8.8 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MKE38RK600DFELB | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | SMD/SMT | 9 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | DUAL | GULL WING | 9 | 1 | FET General Purpose Power | R-PDSO-G9 | 50A | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 1950 mJ | 45 mΩ | 6.8nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-06AS-TUBE | IXYS | $3.02 |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 35 ns | 600V | 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30EM2200PZ | IXYS | $4.35 |
Min: 1 Mult: 1 |
Surface Mount | Tape & Reel (TR) | 150°C | -55°C | RoHS Compliant | TO-263-3 | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 30A | 1.26V | 370A | ANODE | HIGH VOLTAGE | SILICON | 210W | 40μA | TO-263AB | RECTIFIER DIODE | 2.2kV | 30A | 1 | 2.2kV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXIDM1403_1515_M | IXYS |
Min: 1 Mult: 1 |
download | IGBT | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | /files/ixys-ixidm14011505o-datasheets-6112.pdf | Module | 30A | 15V | Half Bridge | 4000VDC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VUI72-16NOXT | IXYS | $42.69 |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/ixys-vui7216noxt-datasheets-4067.pdf | V1A-PAK | 12 | HIGH RELIABILITY, UL RECOGNIZED | 8541.10.00.80 | UPPER | UNSPECIFIED | 6 | Bridge Rectifier Diodes | Not Qualified | R-XUFM-X12 | BRIDGE, 6 ELEMENTS WITH BUILT-IN IGBT AND THERMISTOR | ISOLATED | SILICON | Three Phase | 530A | 3 | 40A | 1.6kV | 40μA @ 1600V | 1.1V @ 25A | 75A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXRH40N120 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | Not Applicable | Standard | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixrh40n120-datasheets-4774.pdf | TO-247-3 | 3 | 6.500007g | 3 | yes | 300W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 2.1μs | 1.2kV | 2.7V | 220 ns | 1.2kV | 55A | 1200V | 350 ns | 600V, 35A, 15 Ω, 15V | 2.7V @ 15V, 30A | NPT | 90nC | 3mJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH50N60C3 | IXYS |
Min: 1 Mult: 1 |
download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixxh50n60c3-datasheets-0645.pdf | TO-247-3 | 3 | 28 Weeks | 6.500007g | 600W | SINGLE | IXX*N60 | 3 | 600W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 2.3V | 69 ns | 2.3V | 100A | 170 ns | 360V, 36A, 5 Ω, 15V | 20V | 5.5V | 2.3V @ 15V, 36A | PT | 64nC | 200A | 24ns/62ns | 720μJ (on), 330μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDMA425P1600PTSF | IXYS |
Min: 1 Mult: 1 |
download | MDMA425P1600PTSF | Chassis Mount | SimBus F | 16 Weeks | Standard | 1600V | 425A | 1 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ160C14K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz160c14k-datasheets-7587.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ160 | 3 | NOT SPECIFIED | 2 | Not Qualified | 12V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 14.4kV | Standard | 14.4kV | 1.7A | 1 | 14400V | 500μA @ 14400V | 12V @ 2A | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ180D35K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz180d22k-datasheets-7651.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ180 | 3 | NOT SPECIFIED | 2 | Not Qualified | 22V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 35kV | Standard | 35kV | 1.3A | 1 | 35000V | 500μA @ 35000V | 22V @ 2A | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ250G39K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz250g33k-datasheets-7686.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ250 | 3 | NOT SPECIFIED | 2 | Not Qualified | 32V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 39.2kV | Standard | 39.2kV | 2.7A | 1 | 39200V | 500μA @ 39200V | 32V @ 12A | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA30C150PB | IXYS | $7.60 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | /files/ixys-dsa30c150pb-datasheets-0130.pdf | TO-220-3 | Lead Free | 3 | 28 Weeks | 2.299997g | No SVHC | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | 85W | SINGLE | 3 | Common Cathode | 85W | 2 | Rectifier Diodes | 15A | 750mV | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 330A | 2.5mA | 150V | 330A | TO-220AB | Schottky | 150V | 15A | 1 | 500μA @ 150V | 890mV @ 15A | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSP25-12AT-TRL | IXYS |
Min: 1 Mult: 1 |
download | DSP25-12AT | Surface Mount | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 2 | R-PSSO-G2 | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 160W | 1200V | 40μA | Standard | 275A | 1 | 25A | 1200V | 40μA @ 1200V | 1.23V @ 25A | 25A | -40°C~175°C | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDNA50P2200TG | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | TO-240AA | 3 | 24 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | IEC-60747 | NO | UPPER | UNSPECIFIED | 150°C | 2 | R-PUFM-X3 | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 190W | 2200V | 50μA | Standard | 780A | 1 | 2200V | 50μA @ 2.2kV | 1.13V @ 50A | 50A | -40°C~150°C | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA120X200LB-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsa120x200lbtrr-datasheets-1090.pdf | 9-SMD Module | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 1mA @ 200V | 980mV @ 60A | 65A | -55°C~175°C | 2 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEC60-02AQ | IXYS |
Min: 1 Mult: 1 |
download | FRED | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-dsec6002aq-datasheets-7987.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 1.2V | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 325A | 25 ns | Standard | 200V | 30A | 1 | 3μA @ 200V | 1.2V @ 30A | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-12A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | Not Applicable | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2000 | /files/dresdenelektronik-30125-datasheets-4096.pdf&product=ixys-dsep6012a-5978154 | 1.2kV | 60A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | 3 | Single | 230W | 1 | Rectifier Diodes | R-PSFM-T2 | 60A | 60A | 2.66V | 500A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500A | 650μA | 1.2kV | 500A | 1.2kV | TO-247AD | 40 ns | 40 ns | Standard | 1.2kV | 60A | 1 | 1200V | 650μA @ 1200V | 2.66V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP30-12A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | Not Applicable | 175°C | -55°C | SCHOTTKY | ROHS3 Compliant | 2000 | /files/ixys-dsep3012a-datasheets-8895.pdf&product=ixys-dsep3012a-5993542 | 1.2kV | 30A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE, UL REGISTERED | No | 8541.10.00.80 | 3 | Single | 165W | 1 | Rectifier Diodes | 30A | 30A | 2.74V | 200A | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 250μA | 1.2kV | 200A | 1.2kV | 40 ns | 40 ns | Standard | 1.2kV | 30A | 1 | 1200V | 250μA @ 1200V | 2.74V @ 30A | -55°C~175°C |
