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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Current | Forward Voltage | Isolation Voltage | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Reverse Voltage (DC) | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Capacitance - Input |
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| IXFR120N20 | IXYS | $84.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr120n20-datasheets-5324.pdf | 200V | 105A | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 17MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | FET General Purpose Power | 65ns | 35 ns | 110 ns | 105A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 480A | 200V | N-Channel | 9100pF @ 25V | 17m Ω @ 60A, 10V | 4V @ 8mA | 105A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFG55N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfg55n50-datasheets-8474.pdf | ISO264™ | 3 | 30 Weeks | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 60ns | 45 ns | 120 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 220A | 0.09Ohm | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK20N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n80q-datasheets-7388.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 420mOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 27ns | 14 ns | 74 ns | 20A | 20V | SILICON | DRAIN | 360W Tc | 80A | 800V | N-Channel | 5100pF @ 25V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N10S2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/ixys-ixfn100n10s1-datasheets-8622.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 360W Tc | 0.0125Ohm | N-Channel | 4500pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n20q-datasheets-5589.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 50ns | 20 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.028Ohm | 1500 mJ | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX32N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50-datasheets-8698.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 360W Tc | 120A | 0.15Ohm | 1500 mJ | N-Channel | 5450pF @ 25V | 150m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC13N50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtc13n50-datasheets-8751.pdf | ISOPLUS220™ | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | Not Qualified | 27ns | 32 ns | 76 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 140W Tc | 48A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX210N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk210n17t-datasheets-9134.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1150W Tc | 580A | 0.0075Ohm | 2000 mJ | N-Channel | 18800pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 4mA | 210A Tc | 285nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV12N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120p-datasheets-4453.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | 25ns | 34 ns | 62 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 543W Tc | 500 mJ | 1.2kV | N-Channel | 5400pF @ 25V | 1.35 Ω @ 500mA, 10V | 6.5V @ 1mA | 12A Tc | 103nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFF24N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixff24n100-datasheets-4316.pdf | i4-Pac™-5 (3 Leads) | 3 | 3 | HIGH VOLTAGE, HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 75 ns | 22A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 120A | 1kV | N-Channel | 390m Ω @ 15A, 10V | 5V @ 8mA | 22A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH28N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh28n50q-datasheets-5608.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 375W | 1 | Not Qualified | 20ns | 12 ns | 51 ns | 28A | 30V | SILICON | DRAIN | SWITCHING | 375W Tc | TO-247AD | 112A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3000pF @ 25V | 200m Ω @ 14A, 10V | 4.5V @ 4mA | 28A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n60-datasheets-4492.pdf | SOT-227-4, miniBLOC | 4 | 46g | No SVHC | 130mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 600W | 1 | FET General Purpose Power | R-PUFM-X4 | 2.5kV | 55ns | 45 ns | 110 ns | 44A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.5V | 600W Tc | 600V | N-Channel | 8900pF @ 25V | 4.5 V | 130m Ω @ 500mA, 10V | 4.5V @ 8mA | 44A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA02N450HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt02n450hv-datasheets-2437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | e3 | Matte Tin (Sn) | Single | 113W | 1 | FET General Purpose Power | 48ns | 143 ns | 28 ns | 200mA | 20V | 4500V | 113W Tc | 0.2A | 4.5kV | N-Channel | 256pF @ 25V | 750 Ω @ 10mA, 10V | 6.5V @ 250μA | 200mA Tc | 10.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD80N10Q-8XQ | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | 100V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX20N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-247-3 | 3 | yes | AVALANCHE RATED | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 800V | 800V | 360W Tc | TO-247AD | 20A | 80A | 0.42Ohm | 1500 mJ | N-Channel | 5100pF @ 25V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| T-FD28N50Q-72 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM35N30 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh35n30-datasheets-7656.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 300W Tc | 35A | 140A | 0.1Ohm | N-Channel | 4800pF @ 25V | 100m Ω @ 17.5A, 10V | 4V @ 4mA | 35A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM24N50L | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EV6R11S3 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ev6r11s6-datasheets-5884.pdf | Yes | Half H-Bridge Driver (External FET) | IX6R11S3 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVLB002 | IXYS |
Min: 1 Mult: 1 |
download | Opto/Lighting | Box | 1 (Unlimited) | RoHS Compliant | 2012 | Yes | Ballast Control | IXI859, IXTP3N50P, IXD611S | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP6N50D2 | IXYS | $6.21 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixta6n50d2-datasheets-1686.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | TO-220AB | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX100N65X2 | IXYS | $74.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfx100n65x2-datasheets-8750.pdf | TO-247-3 | 19 Weeks | unknown | 100A | 650V | 1040W Tc | N-Channel | 11300pF @ 25V | 30m Ω @ 50A, 10V | 5.5V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP130N10T | IXYS | $1.66 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n10t-datasheets-0932.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 47ns | 28 ns | 44 ns | 130A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 0.0091Ohm | 500 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ72N30X3 | IXYS | $10.44 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN220N20X3 | IXYS | $32.16 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/ixys-ixfn220n20x3-datasheets-2491.pdf | SOT-227-4, miniBLOC | 19 Weeks | 200V | 390W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 160A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA38N30X3 | IXYS | $4.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp38n30x3-datasheets-4130.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 300V | 240W Tc | N-Channel | 2240pF @ 25V | 50m Ω @ 19A, 10V | 4.5V @ 1mA | 38A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK5N250 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtx5n250-datasheets-4542.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2500V | 2500V | 960W Tc | 5A | 20A | 2500 mJ | N-Channel | 8560pF @ 25V | 8.8 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MKE38RK600DFELB | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | SMD/SMT | 9 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | DUAL | GULL WING | 9 | 1 | FET General Purpose Power | R-PDSO-G9 | 50A | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 1950 mJ | 45 mΩ | 6.8nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-06AS-TUBE | IXYS | $3.02 |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 35 ns | 600V | 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30EM2200PZ | IXYS | $4.35 |
Min: 1 Mult: 1 |
Surface Mount | Tape & Reel (TR) | 150°C | -55°C | RoHS Compliant | TO-263-3 | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 30A | 1.26V | 370A | ANODE | HIGH VOLTAGE | SILICON | 210W | 40μA | TO-263AB | RECTIFIER DIODE | 2.2kV | 30A | 1 | 2.2kV |
