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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI1553DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1553dlt1e3-datasheets-4314.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | No SVHC | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | GULL WING | 260 | SI1553 | 6 | Dual | 30 | 270mW | 2 | Other Transistors | 410mA | 12V | SILICON | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 0.385Ohm | N and P-Channel | 385m Ω @ 660mA, 4.5V | 600mV @ 250μA (Min) | 660mA 410mA | 1.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI1563DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1563dht1e3-datasheets-4306.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | No | 570mW | SI1563 | 570mW | 2 | SC-70-6 (SOT-363) | 12 ns | 1.13A | 8V | 20V | 570mW | N and P-Channel | 280mOhm @ 1.13A, 4.5V | 1V @ 100μA | 1.13A 880mA | 2nC @ 4.5V | Logic Level Gate | 280 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3585DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3585dvt1e3-datasheets-4406.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3585 | 6 | Dual | 30 | 2 | Other Transistors | 1.8A | 12V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 2A | 0.125Ohm | 20V | N and P-Channel | 600 mV | 125m Ω @ 2.4A, 4.5V | 600mV @ 250μA (Min) | 2A 1.5A | 3.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI1903DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1903dlt1e3-datasheets-4312.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | GULL WING | 260 | SI1903 | 6 | 30 | 270mW | 2 | Other Transistors | 7.5 ns | 20ns | 12 ns | 8.5 ns | 410mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.41A | 0.995Ohm | 2 P-Channel (Dual) | 995m Ω @ 410mA, 4.5V | 1.5V @ 250μA | 1.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI4276DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4276dyt1ge3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | GULL WING | 260 | SI4276 | 8 | Dual | 30 | 2.8W | 2 | 8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6W 2.8W | 8A | 0.0153Ohm | 30V | 2 N-Channel (Dual) | 1000pF @ 15V | 15.3m Ω @ 9.5A, 10V | 2.5V @ 250μA | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI1988DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si1988dht1e3-datasheets-4376.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.25W | GULL WING | 260 | SI1988 | 6 | 30 | 2 | 8 ns | 20ns | 10 ns | 15 ns | 1.3A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 110pF @ 10V | 168m Ω @ 1.4A, 4.5V | 1V @ 250μA | 4.1nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI3588DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3588dvt1e3-datasheets-4374.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3588 | 6 | Dual | 30 | 830mW | 2 | Other Transistors | 2.5A | 8V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 450mV | 830mW 83mW | 0.08Ohm | 20V | N and P-Channel | 450 mV | 80m Ω @ 3A, 4.5V | 450mV @ 250μA (Min) | 2.5A 570mA | 7.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI4500BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4500bdyt1e3-datasheets-4459.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | No SVHC | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | 1.3W | DUAL | GULL WING | 260 | SI4500 | 8 | 2 | 40 | 1.3W | 2 | Other Transistors | Not Qualified | 20 ns | 35ns | 35 ns | 55 ns | 9.1A | 12V | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 6.6A | N and P-Channel, Common Drain | 20m Ω @ 9.1A, 4.5V | 1.5V @ 250μA | 6.6A 3.8A | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||
| SI3850ADV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3850advt1e3-datasheets-4389.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.08W | GULL WING | 260 | SI3850 | 6 | Dual | 30 | 1.06W | 2 | Other Transistors | 1.4A | 12V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.41Ohm | 20V | N and P-Channel, Common Drain | 300m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 1.4A 960mA | 1.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI1551DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1551dlt1e3-datasheets-4304.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | GULL WING | 260 | SI1551 | 6 | Dual | 30 | 300mW | 2 | Other Transistors | 410mA | 12V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.29A | 20V | N and P-Channel | 1.9 Ω @ 290mA, 4.5V | 1.5V @ 250μA | 290mA 410mA | 1.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI3586DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3586dvt1e3-datasheets-4402.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | PURE MATTE TIN (SN) | 830mW | GULL WING | 260 | SI3586 | 6 | Dual | 30 | 830mW | 2 | Other Transistors | 2.5A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.1V | 20V | N and P-Channel | 1.1 V | 60m Ω @ 3.4A, 4.5V | 1.1V @ 250μA | 2.9A 2.1A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI4501ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4501adyt1e3-datasheets-4443.pdf | 8-SOIC (0.154, 3.90mm Width) | Unknown | 8 | 1.3W | SI4501 | 1.3W | 8-SO | 4.1A | 8V | 30V 8V | 800mV | 1.3W | 42mOhm | 8V | N and P-Channel, Common Drain | 18mOhm @ 8.8A, 10V | 1.8V @ 250μA | 6.3A 4.1A | 20nC @ 5V | Logic Level Gate | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4511DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4511dyt1e3-datasheets-4473.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | DUAL | GULL WING | 260 | SI4511 | 8 | 2 | 30 | 2W | 2 | Other Transistors | 9.6A | 12V | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 0.0145Ohm | N and P-Channel | 14.5m Ω @ 9.6A, 10V | 1.8V @ 250μA | 7.2A 4.6A | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI4830CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4830cdyt1ge3-datasheets-1925.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 506.605978mg | Unknown | 20MOhm | 8 | EAR99 | Tin | No | e3 | 2.9W | GULL WING | 260 | SI4830 | 8 | Dual | 30 | 2W | 2 | 17 ns | 12ns | 10 ns | 19 ns | 7.5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 30V | 2 N-Channel (Half Bridge) | 950pF @ 15V | 20m Ω @ 8A, 10V | 3V @ 1mA | 8A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SI4622DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4622dyt1ge3-datasheets-1933.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 3.1W | GULL WING | 260 | SI4622 | 8 | 2 | 30 | 2.2W | 2 | FET General Purpose Power | 11 ns | 8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.1W | 8A | 0.016Ohm | 2 N-Channel (Dual) | 2458pF @ 15V | 16m Ω @ 9.6A, 10V | 2.5V @ 1mA | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| SI4650DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4650dyt1e3-datasheets-1927.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 3.1W | DUAL | GULL WING | 260 | SI4650 | 8 | 2 | 30 | 2 | 32 ns | 130ns | 34 ns | 19 ns | 7.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 30V | 2 N-Channel (Half Bridge) | 1550pF @ 15V | 18m Ω @ 8A, 10V | 3V @ 1mA | 8A | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| SI4914BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4914bdyt1ge3-datasheets-1944.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 506.605978mg | 8 | No | 3.1W | SI4914 | 2 | Dual | 2 | 8-SO | 10 ns | 9ns | 8 ns | 16 ns | 8A | 20V | 30V | 2.7W 3.1W | 15.5mOhm | 2 N-Channel (Half Bridge) | 21mOhm @ 8A, 10V | 2.7V @ 250μA | 8.4A 8A | 10.5nC @ 4.5V | Standard | 21 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SI4670DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4670dyt1ge3-datasheets-9495.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | GULL WING | 260 | SI4670 | 8 | 2 | 30 | 2 | 15 ns | 50ns | 50 ns | 20 ns | 7A | 16V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 7A | 2 N-Channel (Dual) | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI4947ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4947adyt1e3-datasheets-4547.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | PURE MATTE TIN (SN) | 1.2W | GULL WING | 260 | SI4947 | 8 | Dual | 30 | 2W | 2 | Other Transistors | 8 ns | 9ns | 10 ns | 21 ns | -3A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3A | 30V | 2 P-Channel (Dual) | 80m Ω @ 3.9A, 10V | 1V @ 250μA (Min) | 3A | 8nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI4906DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4906dyt1e3-datasheets-4512.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4906 | 8 | Dual | 30 | 2W | 2 | 85ns | 7 ns | 17 ns | 5.3A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 0.039Ohm | 40V | 2 N-Channel (Dual) | 625pF @ 20V | 39m Ω @ 5A, 10V | 2.2V @ 250μA | 6.6A | 22nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| SI6981DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6981dqt1e3-datasheets-4704.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | No SVHC | 31mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | SI6981 | 8 | Dual | 1.14W | 2 | Other Transistors | 35 ns | 55ns | 52 ns | 120 ns | -4.8A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -900mV | MO-153 | 4.1A | 20V | 2 P-Channel (Dual) | 31m Ω @ 4.8A, 4.5V | 900mV @ 300μA | 4.1A | 25nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI4910DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4910dyt1e3-datasheets-4516.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4910 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 60ns | 5 ns | 22 ns | 6A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 3.1W | 65 pF | 40V | 2 N-Channel (Dual) | 855pF @ 20V | 27m Ω @ 6A, 10V | 2V @ 250μA | 7.6A | 32nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| SI4913DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4913dyt1e3-datasheets-4507.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4913 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 32 ns | 42ns | 160 ns | 350 ns | 9.4A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 7.1A | 0.015Ohm | -20V | 2 P-Channel (Dual) | 15m Ω @ 9.4A, 4.5V | 1V @ 500μA | 7.1A | 65nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI6544BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6544bdqt1e3-datasheets-4657.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3.0988mm | 1.0414mm | 4.4958mm | Lead Free | 8 | 32mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI6544 | 8 | Dual | 30 | 830mW | 2 | Other Transistors | 14ns | 14 ns | 40 ns | 2.7A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.7A | N and P-Channel | 43m Ω @ 3.8A, 10V | 3V @ 250μA | 3.7A 3.8A | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI1972DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si1972dht1e3-datasheets-4344.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1972 | 6 | 30 | 740mW | 2 | FET General Purpose Power | 1.3A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 75pF @ 15V | 225m Ω @ 1.3A, 10V | 2.8V @ 250μA | 2.8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| SI4992EY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4992eyt1e3-datasheets-4593.pdf | 8-SOIC (0.154, 3.90mm Width) | 540.001716mg | 8 | 1.4W | SI4992 | 2 | Dual | 1.4W | 2 | 8-SO | 4.8A | 20V | 75V | 1.4W | 48mOhm | 75V | 2 N-Channel (Dual) | 1 V | 48mOhm @ 4.8A, 10V | 3V @ 250μA | 3.6A | 21nC @ 10V | Logic Level Gate | 48 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SI5933CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5933cdct1ge3-datasheets-1970.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 84.99187mg | No SVHC | 144mOhm | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | 2.8W | 260 | SI5933 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 1 ns | 34ns | 8 ns | 22 ns | 2.5A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 3.7A | 10A | -20V | 2 P-Channel (Dual) | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A | 6.8nC @ 5V | Standard | ||||||||||||||||||||||||||||||
| SI5904DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5904dct1e3-datasheets-4621.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | C BEND | 260 | SI5904 | 8 | 30 | 1.1W | 2 | FET General Purpose Powers | 12 ns | 35ns | 9 ns | 19 ns | 3.1A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.075Ohm | 2 N-Channel (Dual) | 75m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI6924AEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6924aedqt1e3-datasheets-4672.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1W | GULL WING | 260 | SI6924 | 8 | Dual | 40 | 1W | 2 | FET General Purpose Power | 950 ns | 1.4μs | 3.1 μs | 7 μs | 4.6A | 14V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4.1A | 0.033Ohm | 28V | 2 N-Channel (Dual) Common Drain | 33m Ω @ 4.6A, 4.5V | 1.5V @ 250μA | 4.1A | 10nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI5511DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5511dct1e3-datasheets-4605.pdf | 8-SMD, Flat Lead | 2.6W | SI5511 | 1206-8 ChipFET™ | 435pF | 3.6A | 30V | 3.1W 2.6W | N and P-Channel | 435pF @ 15V | 55mOhm @ 4.8A, 4.5V | 2V @ 250μA | 4A 3.6A | 7.1nC @ 5V | Logic Level Gate | 55 mΩ |
