Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIA511DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia511djt1ge3-datasheets-5472.pdf | PowerPAK® SC-70-6 Dual | 6 | Unknown | 6 | EAR99 | No | 6.5W | SIA511 | 6 | Dual | 6.5W | 2 | 12ns | 10 ns | 20 ns | 4.5A | 8V | 12V | 1V | 12V | N and P-Channel | 400pF @ 6V | 1 V | 40m Ω @ 4.2A, 4.5V | 1V @ 250μA | 12nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI5519DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5519dut1ge3-datasheets-5417.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 8 | 2.27W | SI5519 | 2 | 2.27W | 2 | PowerPAK® ChipFet Dual | 660pF | 4.5 ns | 11ns | 8.5 ns | 25 ns | 6A | 12V | 20V | 10.4W | 64mOhm | N and P-Channel | 660pF @ 10V | 36mOhm @ 6.1A, 4.5V | 1.8V @ 250μA | 6A | 17.5nC @ 10V | Standard | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SIA911EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia911edjt1ge3-datasheets-5502.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 28.009329mg | 101mOhm | 7.8W | SIA911 | 2 | PowerPAK® SC-70-6 Dual | 32 ns | 70ns | 70 ns | 990 ns | -4.5A | 8V | 20V | 7.8W | 192mOhm | 2 P-Channel (Dual) | 101mOhm @ 2.7A, 4.5V | 1V @ 250μA | 4.5A | 11nC @ 8V | Logic Level Gate | 101 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SIA917DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia917djt1ge3-datasheets-5480.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 110mOhm | 6 | yes | EAR99 | No | 6.5W | 260 | SIA917 | 6 | Dual | 40 | 2 | Other Transistors | 20 ns | 45ns | 10 ns | 15 ns | -4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 3.3A | 10A | -20V | 2 P-Channel (Dual) | 250pF @ 10V | -1 V | 110m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 4.5A | 9nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI4226DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4226dyt1ge3-datasheets-5518.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4226 | 8 | 2 | Dual | 30 | 2W | 2 | 14 ns | 10ns | 8 ns | 30 ns | 8A | 12V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 3.2W | 7.5A | 0.0195Ohm | 25V | 2 N-Channel (Dual) | 1255pF @ 15V | 19.5m Ω @ 7A, 4.5V | 2V @ 250μA | 36nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| SIA912DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia912djt1ge3-datasheets-5454.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 40MOhm | 6 | yes | EAR99 | No | 1.9W | 260 | SIA912 | 6 | Dual | 40 | 1.9W | 2 | 5 ns | 15ns | 15 ns | 35 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1V | 6.5W | 12V | 2 N-Channel (Dual) | 400pF @ 6V | 1 V | 40m Ω @ 4.2A, 4.5V | 1V @ 250μA | 11.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI6928DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si6928dqt1e3-datasheets-4686.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 35MOhm | 8 | No | 1W | SI6928 | Dual | 1W | 2 | 8-TSSOP | 12 ns | 9ns | 9 ns | 25 ns | 4A | 20V | 30V | 1W | 35mOhm | 30V | 2 N-Channel (Dual) | 35mOhm @ 4A, 10V | 1V @ 250μA | 4A | 14nC @ 5V | Logic Level Gate | 35 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SIB914DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sib914dkt1ge3-datasheets-5475.pdf | PowerPAK® SC-75-6L Dual | 1.6mm | 750μm | 1.6mm | Lead Free | 6 | 95.991485mg | Unknown | 113mOhm | 6 | yes | EAR99 | Tin | No | 3.1W | C BEND | 260 | SIB914 | 6 | 2 | Dual | 40 | 1.1W | 2 | FET General Purpose Power | 4 ns | 7ns | 7 ns | 22 ns | 1.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | METAL-OXIDE SEMICONDUCTOR | 800mV | 8V | 2 N-Channel (Dual) | 125pF @ 4V | 800 mV | 113m Ω @ 2.5A, 4.5V | 800mV @ 250μA | 2.6nC @ 5V | Standard | |||||||||||||||||||||||||||||
| SI7958DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7958dpt1e3-datasheets-4780.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 16.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7958 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | R-XDSO-C6 | 17 ns | 17ns | 17 ns | 66 ns | 11.3A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 3V | 40A | 61 mJ | 40V | 2 N-Channel (Dual) | 16.5m Ω @ 11.3A, 10V | 3V @ 250μA | 7.2A | 75nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||
| SI7945DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7945dpt1e3-datasheets-4778.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | Unknown | 20MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7945 | 8 | Dual | 40 | 1.4W | 2 | Other Transistors | R-XDSO-C6 | 15 ns | 15ns | 15 ns | 130 ns | 10.9A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -3V | 7A | 30A | 30V | 2 P-Channel (Dual) | 20 V | 20m Ω @ 10.9A, 10V | 3V @ 250μA | 7A | 74nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI6963BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si6963bdqt1e3-datasheets-4674.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 45mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI6963 | 8 | Dual | 30 | 830mW | 2 | Other Transistors | 33 ns | 57ns | 57 ns | 65 ns | -3.9A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3.4A | 20V | 2 P-Channel (Dual) | 45m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 3.4A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI7842DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7842dpt1e3-datasheets-4743.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7842 | 8 | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3A | 30A | 0.022Ohm | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 2.4V @ 250μA | 6.3A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI6562DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si6562dqt1e3-datasheets-4653.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1W | GULL WING | 260 | SI6562 | 8 | Dual | 40 | 1W | 2 | Other Transistors | 30ns | 30 ns | 57 ns | 3.5A | 12V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.0045A | 0.03Ohm | 20V | N and P-Channel | 30m Ω @ 4.5A, 4.5V | 600mV @ 250μA (Min) | 25nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI6925ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6925adqt1e3-datasheets-4680.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 800mW | GULL WING | 260 | SI6925 | 8 | Dual | 40 | 800mW | 2 | FET General Purpose Powers | 40 ns | 50ns | 50 ns | 20 ns | 3.9A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.3A | 0.045Ohm | 20V | 2 N-Channel (Dual) | 1.8 V | 45m Ω @ 3.9A, 4.5V | 1.8V @ 250μA | 3.3A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI7844DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7844dpt1e3-datasheets-4755.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7844 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6.4A | 2 N-Channel (Dual) | 22m Ω @ 10A, 10V | 2.4V @ 250μA | 6.4A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI4561DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4561dyt1ge3-datasheets-5537.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | unknown | 3.3W | GULL WING | SI4561 | 8 | Dual | 2W | 2 | Not Qualified | 79ns | 14 ns | 36 ns | 6.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3W 3.3W | 5.6A | 0.0355Ohm | 40V | N and P-Channel | 640pF @ 20V | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 6.8A 7.2A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4952DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4952dyt1ge3-datasheets-5615.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 1.8W | GULL WING | 260 | SI4952 | 8 | 2 | Dual | 30 | 1.8W | 2 | 15 ns | 50ns | 50 ns | 20 ns | 8A | 16V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 2.8W | 8A | 30A | 25V | 2 N-Channel (Dual) | 680pF @ 13V | 2.2 V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SIA914DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia914djt1e3-datasheets-4841.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 53mOhm | 6 | yes | EAR99 | No | 6.5W | 260 | SIA914 | 6 | Dual | 40 | 1.9W | 2 | 5 ns | 32ns | 53 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 20V | 2 N-Channel (Dual) | 400pF @ 10V | 1 V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 11.5nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SIB911DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sib911dkt1e3-datasheets-4835.pdf | PowerPAK® SC-75-6L Dual | Lead Free | 6 | Unknown | 295mOhm | 6 | yes | EAR99 | No | 3.1W | 260 | SIB911 | 6 | Dual | 40 | 1.1W | 2 | Other Transistors | 12 ns | 45ns | 31 ns | 10 ns | -2.6A | 8V | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 1.5A | 20V | 2 P-Channel (Dual) | 115pF @ 10V | -1 V | 295m Ω @ 1.5A, 4.5V | 1V @ 250μA | 2.6A | 4nC @ 8V | Standard | |||||||||||||||||||||||||||||||||
| SI7960DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7960dpt1e3-datasheets-4788.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | 21mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.4W | C BEND | 260 | SI7960 | 8 | 2 | Dual | 30 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 12ns | 12 ns | 60 ns | 9.7A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 40A | 60V | 2 N-Channel (Dual) | 3 V | 21m Ω @ 9.7A, 10V | 3V @ 250μA | 6.2A | 75nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SI7501DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7501dnt1e3-datasheets-4745.pdf | PowerPAK® 1212-8 Dual | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.6W | C BEND | 260 | SI7501 | 8 | Dual | 30 | 3.1W | 2 | Other Transistors | S-XDSO-C5 | 10 ns | 20ns | 20 ns | 25 ns | 5.4A | 25V | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3V | 0.035Ohm | 30V | N and P-Channel, Common Drain | 35m Ω @ 7.7A, 10V | 3V @ 250μA | 5.4A 4.5A | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI7540DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7540dpt1e3-datasheets-4748.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | No SVHC | 32mOhm | 8 | No | 1.4W | SI7540 | 2 | Single | 1.4W | 1 | PowerPAK® SO-8 Dual | 35 ns | 42ns | 42 ns | 54 ns | 7.6A | 8V | 12V | 600mV | 1.4W | 26mOhm | N and P-Channel | 17mOhm @ 11.8A, 4.5V | 1.5V @ 250μA | 7.6A 5.7A | 17nC @ 4.5V | Logic Level Gate | 17 mΩ | |||||||||||||||||||||||||||||||||||||||
| SIA513DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sia513djt1ge3-datasheets-5467.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 28.009329mg | 6 | 6.5W | SIA513 | 2 | 1.9W | 2 | PowerPAK® SC-70-6 Dual | 360pF | 20 ns | 45ns | 10 ns | 15 ns | 4.5A | 12V | 20V | 6.5W | 110mOhm | N and P-Channel | 360pF @ 10V | 60mOhm @ 3.4A, 4.5V | 1.5V @ 250μA | 4.5A | 12nC @ 10V | Logic Level Gate | 60 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SI4670DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4670dyt1ge3-datasheets-9495.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 1.8W | GULL WING | 260 | SI4670 | 8 | 2 | 30 | 2 | 15 ns | 50ns | 50 ns | 20 ns | 8A | 16V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 2.8W | 7A | 25V | 2 N-Channel (Dual) | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SQJ910AEP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 30V | 48W Tc | 2 N-Channel (Dual) | 1869pF @ 15V | 7mOhm @ 12A, 10V | 2.5V @ 250μA | 30A Tc | 39nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7900AEDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7900aednt1e3-datasheets-8896.pdf | PowerPAK® 1212-8 Dual | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.5W | C BEND | 260 | SI7900 | 8 | Dual | 30 | 1.5W | 2 | FET General Purpose Power | S-XDSO-C5 | 850 ns | 1.3μs | 1.3 μs | 8.6 μs | 6A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 6A | 30A | 2 N-Channel (Dual) Common Drain | 26m Ω @ 8.5A, 4.5V | 900mV @ 250μA | 16nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI4276DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4276dyt1e3-datasheets-9545.pdf | 8-SOIC (0.154, 3.90mm Width) | 6 Weeks | 2.8W | SI4276 | 8-SO | 1nF | 8A | 30V | 3.6W 2.8W | 2 N-Channel (Dual) | 1000pF @ 15V | 15.3mOhm @ 9.5A, 10V | 2.5V @ 250μA | 8A | 26nC @ 10V | Logic Level Gate | 15.3 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4214DDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4214ddyt1ge3-datasheets-6200.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 19.5mOhm | 3.1W | 8-SO | 660pF | 8.5A | 30V | 3.1W | 2 N-Channel (Dual) | 660pF @ 15V | 19.5mOhm @ 8A, 10V | 2.5V @ 250μA | 8.5A | 22nC @ 10V | Logic Level Gate | 19.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4505DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4505dyt1e3-datasheets-9597.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 21 Weeks | 8 | yes | EAR99 | e3 | MATTE TIN | 1.2W | DUAL | GULL WING | 260 | 8 | 40 | 2 | Other Transistors | Not Qualified | 3.8A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 8V | METAL-OXIDE SEMICONDUCTOR | 6A | 8V | N and P-Channel | 18m Ω @ 7.8A, 10V | 1.8V @ 250μA | 6A 3.8A | 20nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI3948DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3948dvt1e3-datasheets-4388.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 21 Weeks | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.15W | GULL WING | 260 | SI3948 | 6 | Dual | 30 | 1.15W | 2 | FET General Purpose Powers | 7 ns | 5 ns | 13 ns | 2.5A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 30V | 2 N-Channel (Dual) | 105m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 3.2nC @ 5V | Logic Level Gate |
