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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI4505DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4505dyt1e3-datasheets-9597.pdf | 8-SOIC (0.154, 3.90mm Width) | 21 Weeks | 1.2W | 8-SO | 3.8A | 8V | 30V 8V | 1.2W | 42mOhm | N and P-Channel | 18mOhm @ 7.8A, 10V | 1.8V @ 250μA | 6A 3.8A | 20nC @ 5V | Logic Level Gate | 18 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB60EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb60ept1ge3-datasheets-4698.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 60V | 48W Tc | 2 N-Channel (Dual) | 1600pF @ 25V | 12mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50NP04-77P-T4E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sud50np0477pt4e3-datasheets-9626.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | Lead Free | 2 | 6 Weeks | 37mOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 24W | SINGLE | GULL WING | 260 | 3 | Dual | 40 | 10.8W | 2 | Other Transistors | 14ns | 10 ns | 36 ns | 8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 10.8W 24W | 8A | 35A | 40V | N and P-Channel, Common Drain | 640pF @ 20V | 37m Ω @ 5A, 10V | 2.5V @ 250μA | 20nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| SIZ720DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz720dtt1ge3-datasheets-9632.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 14 Weeks | 6 | EAR99 | No | e3 | MATTE TIN | 48W | 260 | 2 | Dual | 40 | 4.6W | 16A | 20V | 27W 48W | 2 N-Channel (Half Bridge) | 825pF @ 10V | 2 V | 8.7m Ω @ 16.8A, 10V | 2V @ 250μA | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF918DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf918dtt1ge3-datasheets-9699.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.4W Ta 26.6W Tc 3.7W Ta 50W Tc | 2 N-Channel (Dual), Schottky | 1060pF 2650pF @ 15V | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V | 2.4V @ 250μA, 2.3V @ 250μA | 23A Ta 40A Tc 35A Ta 60A Tc | 22nC, 56nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF914DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf914dtt1ge3-datasheets-9725.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 25V | 3.4W Ta 26.6W Tc 4W Ta 60W Tc | 2 N-Channel (Dual) | 1050pF 4670pF @ 10V | 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 23.5A Ta 40A Tc 52A Ta 60A Tc | 21nC, 98nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8902EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si8902edbt2e1-datasheets-9750.pdf | 6-MICRO FOOT®CSP | 6 | 24 Weeks | yes | EAR99 | ESD PROTECTED, ULTRA-LOW RESISTANCE | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | SI8902 | 6 | 40 | 2 | FET General Purpose Power | Not Qualified | R-XBGA-B6 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1.7W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 3.9A | 0.072Ohm | 2 N-Channel (Dual) Common Drain | 1V @ 980μA | 3.9A | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI4963BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4963bdyt1e3-datasheets-2990.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4963 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 30 ns | 40ns | 55 ns | 80 ns | 4.9A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 32m Ω @ 6.5A, 4.5V | 1.4V @ 250μA | 21nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI6975DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6975dqt1ge3-datasheets-9753.pdf | 8-TSSOP (0.173, 4.40mm Width) | 21 Weeks | 27mOhm | 8 | 830mW | Dual | 830mW | 8-TSSOP | 4.3A | 8V | 12V | 830mW | 27mOhm | 12V | 2 P-Channel (Dual) | 27mOhm @ 5.1A, 4.5V | 450mV @ 5mA (Min) | 4.3A | 30nC @ 4.5V | Logic Level Gate | 27 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 13 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | 8 | 2 | 40 | 2W | 2 | FET General Purpose Power | 8 ns | 10ns | 10 ns | 21 ns | 5.7A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI4936ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4936adyt1e3-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 14 Weeks | 506.605978mg | 8 | No | 1.1W | SI4936 | 2 | Dual | 8-SO | 6 ns | 14ns | 5 ns | 30 ns | 4.4A | 20V | 30V | 1.1W | 36mOhm | 30V | 2 N-Channel (Dual) | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 4.4A | 20nC @ 10V | Logic Level Gate | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI4618DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4618dyt1e3-datasheets-9868.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.35W | DUAL | GULL WING | 260 | SI4618 | 8 | 2 | 30 | 2 | FET General Purpose Power | 24 ns | 97ns | 45 ns | 35 ns | 7.4A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.98W 4.16W | 6.7A | 35A | 0.017Ohm | 30V | 2 N-Channel (Half Bridge) | 1535pF @ 15V | 17m Ω @ 8A, 10V | 2.5V @ 1mA | 8A 15.2A | 44nC @ 10V | Standard | |||||||||||||||||||||||||||||
| SI7946ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/vishaysiliconix-si7946adpt1ge3-datasheets-9918.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | NOT SPECIFIED | 2 | NOT SPECIFIED | 150V | 19.8W | 2 N-Channel (Dual) | 230pF @ 75V | 186m Ω @ 3A, 10V | 3.5V @ 250μA | 7.7A Tc | 6.5nC @ 7.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 6 Weeks | 22mOhm | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 5.7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI8900EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8900edbt2e1-datasheets-0037.pdf | 10-UFBGA, CSPBGA | 10 | 13 Weeks | 40mOhm | 10 | yes | EAR99 | unknown | e1 | TIN SILVER COPPER | 1W | BOTTOM | BALL | 260 | SI8900 | 10 | Dual | 40 | 1W | 2 | FET General Purpose Power | Not Qualified | 4.5μs | 4.5 μs | 55 μs | 7A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 5.4A | 24mOhm | 20V | 2 N-Channel (Dual) Common Drain | 1V @ 1.1mA | 5.4A | Logic Level Gate | 24 mΩ | ||||||||||||||||||||||||||||||||||||
| SI6975DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6975dqt1ge3-datasheets-9753.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 21 Weeks | 157.991892mg | 8 | 830mW | 2 | Dual | 830mW | 8-TSSOP | 25 ns | 32ns | 32 ns | 96 ns | 4.3A | 8V | 12V | 830mW | 27mOhm | -12V | 2 P-Channel (Dual) | 27mOhm @ 5.1A, 4.5V | 450mV @ 5mA (Min) | 4.3A | 30nC @ 4.5V | Logic Level Gate | 27 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SI7962DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7962dpt1e3-datasheets-0110.pdf | PowerPAK® SO-8 Dual | 6 | 13 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7962 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | Not Qualified | R-PDSO-C6 | 15ns | 15 ns | 55 ns | 11.1A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7.1A | 0.017Ohm | 40V | 2 N-Channel (Dual) | 17m Ω @ 11.1A, 10V | 4.5V @ 250μA | 7.1A | 70nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| SI4925BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4925bdyt1e3-datasheets-5285.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4925 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 9 ns | 12ns | 12 ns | 60 ns | -5.3A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -30V | 2 P-Channel (Dual) | 25m Ω @ 7.1A, 10V | 3V @ 250μA | 5.3A | 50nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI4532ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4532adyt1ge3-datasheets-1111.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15 Weeks | 186.993455mg | Unknown | 8 | No | 1.2W | SI4532 | 2 | 8-SO | 8 ns | 9ns | 10 ns | 21 ns | 3.7A | 20V | 30V | 1V | 1.13W 1.2W | 80mOhm | 30V | N and P-Channel | 53mOhm @ 4.9A, 10V | 1V @ 250μA | 3.7A 3A | 16nC @ 10V | Logic Level Gate | 53 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SI1539DDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-si1539ddlt1ge3-datasheets-1271.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 340mW | 0.7A | 0.388Ohm | 888 pF | N and P-Channel | 28pF @ 15V 21pF @ 15V | 388m Ω @ 600mA, 10V, 1.07 Ω @ 400mA, 10V | 2.5V @ 250μA, 3V @ 250μA | 700mA Tc 460mA Tc | 1.1nC @ 4.5V, 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SI4214DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4214dyt1ge3-datasheets-1312.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 186.993455mg | 23.5mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | 8 | 30 | 2W | 2 | 13 ns | 11ns | 9 ns | 18 ns | 6.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 785pF @ 15V | 23.5m Ω @ 7A, 10V | 2.5V @ 250μA | 8.5A | 23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| SIA915DJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia915djt4ge3-datasheets-1344.pdf | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | 30V | 1.9W Ta 6.5W Tc | 2 P-Channel (Dual) | 275pF @ 15V | 87mOhm @ 2.9A, 10V | 2.2V @ 250μA | 3.7A Ta 4.5A Tc | 9nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA922EDJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia922edjt4ge3-datasheets-1416.pdf | PowerPAK® SC-70-6 Dual | 30V | 1.9W Ta 7.8W Tc | 2 N-Channel (Dual) | 64m Ω @ 3A, 4.5V | 1.4V @ 250μA | 4.4A Ta 4.5A Tc | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA907EDJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA923EDJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia923edjt4ge3-datasheets-1468.pdf | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | 20V | 1.9W Ta 7.8W Tc | 2 P-Channel (Dual) | 54mOhm @ 3.8A, 4.5V | 1.4V @ 250μA | 4.5A Ta 4.5A Tc | 25nC @ 8V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA907EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1902AEL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq1902aelt1ge3-datasheets-1477.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 430mW | 0.78A | 0.415Ohm | 15 pF | 2 N-Channel (Dual) | 75pF @ 10V | 415m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 780mA Tc | 1.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI1553DL-T1 | Vishay Siliconix | $0.68 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1553dlt1e3-datasheets-4314.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | 7.512624mg | 6 | 270mW | SI1553 | 2 | 300mW | 2 | SC-70-6 (SOT-363) | 7.5 ns | 20ns | 20 ns | 8.5 ns | 660mA | 12V | 20V | 270mW | 385mOhm | 20V | N and P-Channel | 385mOhm @ 660mA, 4.5V | 600mV @ 250μA (Min) | 660mA 410mA | 1.2nC @ 4.5V | Logic Level Gate | 385 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI9945AEY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si9945aeyt1-datasheets-1667.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 2.4W | SI9945 | 2 | Dual | 2.4W | 2 | 8-SO | 9 ns | 10ns | 8 ns | 21 ns | 3.7A | 20V | 60V | 2.4W | 80mOhm | 60V | 2 N-Channel (Dual) | 80mOhm @ 3.7A, 10V | 3V @ 250μA | 3.7A | 20nC @ 10V | Logic Level Gate | 80 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI1539DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1539dlt1e3-datasheets-4294.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | DUAL | GULL WING | 260 | SI1539 | 6 | 30 | 270mW | 2 | Other Transistors | 420mA | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.48Ohm | 30V | N and P-Channel | 480m Ω @ 590mA, 10V | 2.6V @ 250μA | 540mA 420mA | 1.4nC @ 10V | Logic Level Gate |
