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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI7501DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7501dnt1e3-datasheets-4745.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 35mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.6W | C BEND | 260 | SI7501 | 8 | 40 | 3.1W | 2 | Other Transistors | S-XDSO-C5 | 10 ns | 20ns | 20 ns | 25 ns | 5.4A | 25V | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.5A | 30V | N and P-Channel, Common Drain | 35m Ω @ 7.7A, 10V | 3V @ 250μA | 5.4A 4.5A | 14nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI7540DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7540dpt1e3-datasheets-4748.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 17mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.5W | C BEND | 260 | SI7540 | 8 | 2 | Single | 40 | 3.5W | 1 | Other Transistors | R-XDSO-C6 | 35 ns | 42ns | 42 ns | 54 ns | 11.8A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5V | 1.4W | 7.6A | 12V | N and P-Channel | 1.5 V | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 7.6A 5.7A | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||
| SI7872DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7872dpt1e3-datasheets-4752.pdf | 30V | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | 22mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7872 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 9 ns | 10ns | 10 ns | 40 ns | 6.4A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 30V | 2 N-Channel (Half Bridge) | 22m Ω @ 7.5A, 10V | 3V @ 250μA | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI7844DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7844dpt1e3-datasheets-4755.pdf | PowerPAK® SO-8 Dual | 5.99mm | 1.07mm | 5mm | Lead Free | 6 | No SVHC | 22mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7844 | 8 | Dual | 30 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | 30V | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.4V | 6.4A | 30V | 2 N-Channel (Dual) | 2.4 V | 22m Ω @ 10A, 10V | 2.4V @ 250μA | 6.4A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||
| SI7530DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7530dpt1e3-datasheets-4757.pdf | PowerPAK® SO-8 Dual | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | C BEND | 260 | SI7530 | 8 | Dual | 40 | 2 | Other Transistors | R-XDSO-C6 | 9ns | 9 ns | 65 ns | 3A | 20V | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.4W 1.5W | 3A | 15A | 0.075Ohm | 11 mJ | 60V | N and P-Channel | 75m Ω @ 4.6A, 10V | 3V @ 250μA | 3A 3.2A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI4916DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4916dyt1e3-datasheets-4536.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.5W | DUAL | FLAT | 260 | SI4916 | 8 | 2 | 30 | 2 | FET General Purpose Power | 9 ns | 13ns | 13 ns | 27 ns | 7.5A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.5W | 10.5A | 40A | 30V | 2 N-Channel (Half Bridge) | 18m Ω @ 10A, 10V | 3V @ 250μA | 10A 10.5A | 10nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI7911DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7911dnt1e3-datasheets-4763.pdf | PowerPAK® 1212-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7911 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | S-XDSO-C6 | 20 ns | 35ns | 35 ns | 70 ns | -5.7A | 8V | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.051Ohm | 2 P-Channel (Dual) | 51m Ω @ 5.7A, 4.5V | 1V @ 250μA | 4.2A | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI9933BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9933bdyt1e3-datasheets-4783.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 8 | No | 1.1W | SI9933 | 2 | Dual | 1.1W | 2 | 8-SO | 22 ns | 35ns | 35 ns | 45 ns | 3.6A | 12V | 20V | 1.1W | 60mOhm | -20V | 2 P-Channel (Dual) | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250μA | 3.6A | 9nC @ 4.5V | Logic Level Gate | 60 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SI7946DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7946dpt1e3-datasheets-4796.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | Unknown | 150MOhm | 8 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7946 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 11 ns | 15ns | 20 ns | 30 ns | 3.3A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 10A | 4 mJ | 150V | 2 N-Channel (Dual) | 4 V | 150m Ω @ 3.3A, 10V | 4V @ 250μA | 2.1A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI7964DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7964dpt1e3-datasheets-4803.pdf | PowerPAK® SO-8 Dual | 6 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7964 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 20 ns | 15ns | 15 ns | 50 ns | 9.6A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 4.5V | 6.1A | 40A | 31 mJ | 60V | 2 N-Channel (Dual) | 23m Ω @ 9.6A, 10V | 4.5V @ 250μA | 6.1A | 65nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| SI7945DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7945dpt1e3-datasheets-4778.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | Unknown | 20mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7945 | 8 | Dual | 40 | 1.4W | 2 | Other Transistors | R-XDSO-C6 | 15 ns | 15ns | 15 ns | 130 ns | -10.9A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 2 P-Channel (Dual) | -3 V | 20m Ω @ 10.9A, 10V | 3V @ 250μA | 7A | 74nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI9934BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9934bdyt1e3-datasheets-4798.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | No SVHC | 35mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI9934 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 19 ns | 35ns | 35 ns | 80 ns | -6.4A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | -1.4V | -12V | 2 P-Channel (Dual) | 35m Ω @ 6.4A, 4.5V | 1.4V @ 250μA | 4.8A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SIB911DK-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib911dkt1e3-datasheets-4835.pdf | PowerPAK® SC-75-6L Dual | 1.6mm | 750μm | 1.6mm | 95.991485mg | 6 | No | 1.1W | SIB911 | 2 | Dual | PowerPAK® SC-75-6L Dual | 115pF | 12 ns | 45ns | 45 ns | 10 ns | 1.5A | 8V | 20V | 3.1W | 295mOhm | -20V | 2 P-Channel (Dual) | 115pF @ 10V | 295mOhm @ 1.5A, 4.5V | 1V @ 250μA | 2.6A | 4nC @ 8V | Standard | 295 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SI9926BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si9926bdyt1e3-datasheets-4808.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 506.605978mg | 20mOhm | 8 | No | 1.14W | SI9926 | 2 | Dual | 1.14W | 2 | 8-SO | 35 ns | 50ns | 50 ns | 31 ns | 8.2A | 12V | 20V | 1.14W | 20mOhm | 20V | 2 N-Channel (Dual) | 600 mV | 20mOhm @ 8.2A, 4.5V | 1.5V @ 250μA | 6.2A | 20nC @ 4.5V | Logic Level Gate | 20 mΩ | ||||||||||||||||||||||||||||||||||||||||
| SI8904EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si8904edbt2e1-datasheets-4818.pdf | 6-MICRO FOOT®CSP | Lead Free | 45mOhm | 6 | 1W | SI8904 | 2 | 6-Micro Foot™ (2.36x1.56) | 1.6 μs | 2μs | 2 μs | 1.5 μs | 4.9A | 12V | 30V | 1W | 45mOhm | 2 N-Channel (Dual) Common Drain | 1.6V @ 250μA | 3.8A | Logic Level Gate | 45 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7960DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7960dpt1e3-datasheets-4788.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7960 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 12ns | 12 ns | 60 ns | 9.7A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3V | 40A | 2 N-Channel (Dual) | 21m Ω @ 9.7A, 10V | 3V @ 250μA | 6.2A | 75nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SI7983DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7983dpt1e3-datasheets-4787.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8 | 1.4W | SI7983 | 2 | Dual | PowerPAK® SO-8 Dual | 35 ns | 60ns | 60 ns | 390 ns | 60A | 8V | 20V | 1.4W | 17mOhm | -20V | 2 P-Channel (Dual) | 17mOhm @ 12A, 4.5V | 1V @ 600μA | 7.7A | 74nC @ 4.5V | Logic Level Gate | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7958DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7958dpt1e3-datasheets-4780.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 16.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7958 | 8 | 2 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 17 ns | 17ns | 17 ns | 66 ns | 11.3A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 40A | 61 mJ | 40V | 2 N-Channel (Dual) | 3 V | 16.5m Ω @ 11.3A, 10V | 3V @ 250μA | 7.2A | 75nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||
| SIA911DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia911djt1e3-datasheets-4827.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 94MOhm | 6 | No | 6.5W | SIA911 | Dual | 1.9W | 2 | PowerPAK® SC-70-6 Dual | 355pF | 10ns | 10 ns | 20 ns | 3.6A | 8V | 20V | 6.5W | 94mOhm | 2 P-Channel (Dual) | 355pF @ 10V | 94mOhm @ 2.8A, 4.5V | 1V @ 250μA | 4.5A | 12.8nC @ 8V | Standard | 94 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SI8901EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si8901edbt2e1-datasheets-4814.pdf | 6-MICRO FOOT®CSP | Lead Free | 6 | No SVHC | 60mOhm | 6 | yes | EAR99 | unknown | e1 | TIN SILVER COPPER | 1W | BOTTOM | BALL | 260 | SI8901 | 6 | Dual | 40 | 1.7W | 2 | Other Transistors | Not Qualified | 2.3 μs | 2.2μs | 2.2 μs | 1.3 μs | -4.4A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -450mV | 3.5A | 60mOhm | 20V | 2 P-Channel (Dual) Common Drain | 1V @ 350μA | 3.5A | Logic Level Gate | 60 mΩ | ||||||||||||||||||||||||||||||||||
| SIF912EDZ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sif912edzt1e3-datasheets-4855.pdf | PowerPAK® 2x5 | 1.6W | SIF912E | PowerPAK® (2x5) | 7.4A | 30V | 1.6W | 2 N-Channel (Dual) Common Drain | 19mOhm @ 7.4A, 4.5V | 1.5V @ 250μA | 7.4A | 15nC @ 4.5V | Logic Level Gate | 19 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIF902EDZ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sif902edzt1e3-datasheets-4863.pdf | PowerPAK® 2x5 | 6 | 111 Weeks | 6 | yes | EAR99 | No | e3 | MATTE TIN | 1.6W | FLAT | 260 | SIF902E | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 1.7 μs | 2.3μs | 2.3 μs | 1 μs | 7A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 7A | 40A | 20V | 2 N-Channel (Dual) Common Drain | 22m Ω @ 7A, 4.5V | 1.5V @ 250μA | 14nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIA914DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia914djt1e3-datasheets-4841.pdf | PowerPAK® SC-70-6 Dual | 6 | 28.009329mg | EAR99 | e3 | MATTE TIN | 6.5W | C BEND | NOT SPECIFIED | SIA914 | 6 | 2 | Dual | NOT SPECIFIED | 2 | Not Qualified | S-PDSO-C6 | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.053Ohm | 2 N-Channel (Dual) | 400pF @ 10V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 11.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI4941EDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4941edyt1e3-datasheets-4556.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 2W | SI4941 | 2 | 8-SO | 5.5 μs | 11μs | 24 μs | 30 μs | 10A | 20V | 30V | 3.6W | 21mOhm | 2 P-Channel (Dual) | 21mOhm @ 8.3A, 10V | 2.8V @ 250μA | 10A | 70nC @ 10V | Logic Level Gate | 21 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI5933DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si5933dct1e3-datasheets-4639.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | 1.1W | SI5933 | 2 | Dual | 1.1W | 2 | 1206-8 ChipFET™ | 30 ns | 30ns | 30 ns | 27 ns | -2.7A | 8V | 20V | 1.1W | 110mOhm | -20V | 2 P-Channel (Dual) | 110mOhm @ 2.7A, 4.5V | 1V @ 250μA | 2.7A | 7.7nC @ 4.5V | Logic Level Gate | 110 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SI7905DN-T1-GE3 | Vishay Siliconix | $5.01 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7905dnt1ge3-datasheets-5421.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | Unknown | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7905 | 8 | 2 | Dual | 40 | 2.5W | 2 | Other Transistors | R-XDSO-C6 | 6 ns | 13ns | 10 ns | 26 ns | -6A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | -1V | 20.8W | 5A | -40V | 2 P-Channel (Dual) | 880pF @ 20V | 60m Ω @ 5A, 10V | 3V @ 250μA | 6A | 30nC @ 10V | Standard | |||||||||||||||||||||||||
| SI7948DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7948dpt1ge3-datasheets-5429.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8 | 1.4W | SI7948 | 2 | Dual | 1.4W | 2 | PowerPAK® SO-8 Dual | 7 ns | 8ns | 8 ns | 15 ns | 4.6A | 20V | 60V | 1.4W | 75mOhm | 60V | 2 N-Channel (Dual) | 75mOhm @ 4.6A, 10V | 3V @ 250μA | 3A | 20nC @ 10V | Logic Level Gate | 75 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SI7940DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7940dpt1ge3-datasheets-5439.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.4W | C BEND | 260 | SI7940 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 30 ns | 50ns | 50 ns | 60 ns | 11.8A | 8V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 7.6A | 0.017Ohm | 12V | 2 N-Channel (Dual) | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 7.6A | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI7224DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7224dnt1ge3-datasheets-5443.pdf | PowerPAK® 1212-8 Dual | 3.3mm | 1.04mm | 3.3mm | 6 | 15 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7224 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | S-XDSO-C6 | 20 ns | 10ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 17.8W 23W | 6A | 0.035Ohm | 30V | 2 N-Channel (Dual) | 570pF @ 15V | 35m Ω @ 6.5A, 10V | 2.2V @ 250μA | 14.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SIA913DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia913djt1ge3-datasheets-5462.pdf | PowerPAK® SC-70-6 Dual | Unknown | 70mOhm | 6 | No | 1.9W | SIA913 | Dual | 1.9W | PowerPAK® SC-70-6 Dual | 400pF | 15 ns | 25ns | 10 ns | 20 ns | -4.5A | 8V | 12V | -1V | 6.5W | 70mOhm | 12V | 2 P-Channel (Dual) | 400pF @ 6V | -1 V | 70mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4.5A | 12nC @ 8V | Standard | 70 mΩ |
