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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF9640PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9640pbf-datasheets-8001.pdf | -200V | -11A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | 150°C | TO-220AB | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | -11A | 20V | 200V | -4V | 125W Tc | 300 ns | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STF2N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std2n95k5-datasheets-7286.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STF2N | 1 | Single | 1 | 8.5 ns | 13.5ns | 32.5 ns | 20.5 ns | 2A | 30V | SILICON | ISOLATED | SWITCHING | 20W Tc | TO-220AB | 2A | 8A | 5Ohm | 50 mJ | 950V | N-Channel | 105pF @ 100V | 5 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 10nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||
| STP160N3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ H6 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp160n3ll-datasheets-8071.pdf | TO-220-3 | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP160 | NOT SPECIFIED | 120A | 30V | 136W Tc | N-Channel | 3500pF @ 25V | 3.2m Ω @ 60A, 10V | 2.5V @ 250μA | 120A Tc | 42nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT059N15N3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipt059n15n3atma1-datasheets-7600.pdf | 8-PowerSFN | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 375W Tc | 155A | 620A | 0.0059Ohm | 520 mJ | N-Channel | 7200pF @ 75V | 5.9m Ω @ 150A, 10V | 4V @ 270μA | 155A Tc | 92nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R099C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r099c7atma1-datasheets-7287.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 110W Tc | TO-263AB | 22A | 83A | 0.099Ohm | 97 mJ | N-Channel | 1819pF @ 400V | 99m Ω @ 9.7A, 10V | 4V @ 490μA | 22A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT300N08S5N014ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaut300n08s5n014atma1-datasheets-7588.pdf | 8-PowerSFN | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 80V | 300W Tc | N-Channel | 13178pF @ 40V | 1.4m Ω @ 100A, 10V | 3.8V @ 230μA | 300A DC | 187nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB044N15N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb044n15n5atma1-datasheets-7505.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 4.5mm | 6 | 13 Weeks | yes | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 300W | 1 | 175°C | R-PSSO-G6 | 19 ns | 24 ns | 174A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 696A | 0.0044Ohm | 470 mJ | 150V | N-Channel | 8000pF @ 75V | 4.4m Ω @ 87A, 10V | 4.6V @ 264μA | 174A Tc | 100nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RJK60S5DPK-M0#T0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk60s5dpkm0t0-datasheets-7622.pdf | TO-3P-3, SC-65-3 | TO-3PSG | 600V | N-Channel | 1.6pF @ 25V | 178mOhm @ 10A, 10V | 20A Tc | 27nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL40T209ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-irl40t209atma1-datasheets-7494.pdf | 8-PowerSFN | 12 Weeks | 40V | 500W Tc | N-Channel | 16000pF @ 20V | 0.72m Ω @ 100A, 10V | 2.4V @ 250μA | 300A Tc | 269nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R065P7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipl60r065p7auma1-datasheets-7671.pdf | 4-PowerTSFN | 1.1mm | 4 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 201W | 1 | 150°C | S-PSSO-N4 | 16 ns | 73 ns | 41A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 201W Tc | 0.065Ohm | 600V | N-Channel | 2895pF @ 400V | 65m Ω @ 15.9A, 10V | 4V @ 800μA | 41A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| WPB4002 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-wpb4002-datasheets-7679.pdf | TO-3P-3, SC-65-3 | TO-3PB | 600V | 2.5W Ta 220W Tc | N-Channel | 2.2pF @ 30V | 360mOhm @ 11.5A, 10V | 23A Ta | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT150N10S5N035ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaut150n10s5n035atma1-datasheets-7255.pdf | 8-PowerSFN | 2 | 20 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 166W Tc | 150A | 600A | 0.0035Ohm | 210 mJ | N-Channel | 6110pF @ 50V | 3.5m Ω @ 75A, 10V | 3.8V @ 110μA | 150A Tc | 87nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPT111N20NFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipt111n20nfdatma1-datasheets-7658.pdf | 8-PowerSFN | 2.4mm | Contains Lead | 18 Weeks | yes | EAR99 | PG-HSOF-8 | not_compliant | e3 | Tin (Sn) | Halogen Free | 1 | 375W | 175°C | 13 ns | 39 ns | 96A | 20V | 200V | 375W Tc | 200V | N-Channel | 7000pF @ 100V | 11.1m Ω @ 96A, 10V | 4V @ 267μA | 96A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R099CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb60r099cpatma1-datasheets-7685.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 255W Tc | 31A | 93A | 0.099Ohm | 800 mJ | N-Channel | 2800pF @ 100V | 99m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPT60R050G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipt60r050g7xtma1-datasheets-7708.pdf | 8-PowerSFN | 3 | 18 Weeks | yes | EAR99 | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 245W Tc | 44A | 135A | 0.05Ohm | 159 mJ | N-Channel | 2670pF @ 400V | 50m Ω @ 15.9A, 10V | 4V @ 800μA | 44A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUS300N08S5N012ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaus300n08s5n012atma1-datasheets-7666.pdf | 8-PowerSMD, Gull Wing | 20 Weeks | 80V | 375W Tc | N-Channel | 16250pF @ 40V | 1.2m Ω @ 100A, 10V | 3.8V @ 275μA | 300A Tc | 231nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R070C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipl65r070c7auma1-datasheets-7717.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 6ns | 11 ns | 92 ns | 28A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 169W Tc | 0.07Ohm | 171 mJ | N-Channel | 3020pF @ 100V | 70m Ω @ 8.5A, 10V | 4V @ 850μA | 28A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQH140N10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqh140n10-datasheets-7741.pdf | TO-247-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 375W Tc | 140A | 560A | 0.01Ohm | 1500 mJ | N-Channel | 7.9pF @ 25V | 10m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 285nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4222 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk536mtktbe-datasheets-6258.pdf | TO-3P-3, SC-65-3 | TO-3PB | 600V | 2.5W Ta 220W Tc | N-Channel | 2250pF @ 30V | 340mOhm @ 11.5A, 10V | 23A Ta | 81nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPDD60R050G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-ipdd60r050g7xtma1-datasheets-7745.pdf | 10-PowerSOP Module | 2.5mm | 10 | 18 Weeks | YES | DUAL | GULL WING | 1 | 278W | 1 | 150°C | 22 ns | 72 ns | 47A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 278W Tc | TO-252 | 0.05Ohm | 600V | N-Channel | 2670pF @ 400V | 50m Ω @ 15.9A, 10V | 4V @ 800μA | 47A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R125CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r125cpatma1-datasheets-7375.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 208W Tc | 25A | 82A | 0.125Ohm | 708 mJ | N-Channel | 2500pF @ 100V | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 25A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDB7030L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds2070n7-datasheets-4576.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 68W Tc | 80A | 240A | 0.007Ohm | 114 mJ | N-Channel | 2.44pF @ 15V | 7m Ω @ 40A, 10V | 3V @ 250μA | 80A Ta | 33nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB038N12N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb038n12n3gatma1-datasheets-7332.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 35 ns | 52ns | 21 ns | 70 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 300W Tc | 480A | 900 mJ | N-Channel | 13800pF @ 60V | 3.8m Ω @ 100A, 10V | 4V @ 270μA | 120A Tc | 211nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AUIRF8739L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf8739l2tr-datasheets-7361.pdf | DirectFET™ Isometric L8 | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 545A | 40V | 3.8W Ta 340W Tc | N-Channel | 17890pF @ 25V | 0.6m Ω @ 195A, 10V | 3.9V @ 250μA | 57A Ta 545A Tc | 562nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7669L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7669l2tr-datasheets-7354.pdf | DirectFET™ Isometric L8 | Lead Free | 9 | 16 Weeks | 15 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | BOTTOM | 100W | 1 | FET General Purpose Power | R-XBCC-N9 | 15 ns | 30ns | 14 ns | 27 ns | 114A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.3W Ta 100W Tc | 375A | 460A | 0.0044Ohm | 850 mJ | 100V | N-Channel | 5660pF @ 25V | 4.4m Ω @ 68A, 10V | 5V @ 250μA | 19A Ta 114A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7749L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7749l2trpbf-datasheets-7314.pdf | DirectFET™ Isometric L8 | 9.144mm | 740μm | 7.112mm | 9 | 12 Weeks | No SVHC | 8 | EAR99 | No | IRF7749L2TRPBF | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1 | 30 | 3.8W | 1 | FET General Purpose Power | 175°C | R-XBCC-N9 | 29 ns | 43ns | 39 ns | 72 ns | 33A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.3W Ta 125W Tc | 375A | 260 mJ | 60V | N-Channel | 12320pF @ 25V | 2.9 V | 1.5m Ω @ 120A, 10V | 4V @ 250μA | 33A Ta 375A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPT65R105G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipt65r105g7xtma1-datasheets-7391.pdf | 8-PowerSFN | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 156W Tc | N-Channel | 1670pF @ 400V | 105m Ω @ 8.9A, 10V | 4V @ 440μA | 24A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL60S216 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl60s216-datasheets-7498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 195A | 60V | 375W Tc | N-Channel | 15330pF @ 25V | 1.95m Ω @ 100A, 10V | 2.4V @ 250μA | 195A Tc | 255nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT300N08S5N012ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/infineontechnologies-iaut300n08s5n012atma2-datasheets-7473.pdf | 8-PowerSFN | 2.4mm | 20 Weeks | PG-HSOF-8 | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 175°C | 31 ns | 69 ns | 300A | 20V | 375W Tc | 80V | N-Channel | 16250pF @ 40V | 1.2m Ω @ 100A, 10V | 3.8V @ 275μA | 300A Tc | 231nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7749L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7749l2tr-datasheets-7525.pdf | DirectFET™ Isometric L8 | 740μm | 16 Weeks | EAR99 | AUIRF7749L2TR | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.8W | 175°C | 29 ns | 72 ns | 36A | 60V | 2V | 3.8W Ta 341W Tc | 60V | N-Channel | 10655pF @ 25V | 1.5m Ω @ 120A, 10V | 4V @ 250μA | 36A Ta 345A Tc | 275nC @ 10V | 10V |
