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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI3139KE-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microcommercialco-si3139ketp-datasheets-8837.pdf | SOT-523 | 22 Weeks | yes | 260 | 10 | 20V | 150mW | P-Channel | 170pF @ 6V | 700m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 660mA | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV280ENEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/nexperiausainc-pmv280enear-datasheets-8991.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | TO-236AB | 100V | 580mW Ta | 285mOhm | N-Channel | 190pF @ 50V | 385mOhm @ 1.1A, 10V | 2.7V @ 250μA | 1.1A Ta | 6.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2130LDM-7 | Diodes Incorporated | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmp2130ldm7-datasheets-8997.pdf | SOT-23-6 | 1.6mm | 600μm | 1.2mm | 6 | 7 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 40 | 1.25W | 1 | Other Transistors | 12 ns | 20ns | 20 ns | 38 ns | 3.4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 20A | 0.08Ohm | P-Channel | 443pF @ 16V | 80m Ω @ 4.5A, 4.5V | 1.25V @ 250μA | 3.4A Ta | 7.3nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| RT1A060APTR | ROHM Semiconductor | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rt1a060aptr-datasheets-9003.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | EAR99 | not_compliant | DUAL | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-F8 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 600mW Ta | 6A | 18A | 0.019Ohm | P-Channel | 7800pF @ 6V | 19m Ω @ 6A, 4.5V | 1V @ 1mA | 6A Ta | 80nC @ 4.5V | 1.5V 4.5V | -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfd9110pbf-datasheets-9062.pdf | -100V | -700mA | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 3 | 8 Weeks | Unknown | 1.2Ohm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 3 | Single | 1.3W | 1 | Other Transistors | R-PDIP-T3 | 10 ns | 27ns | 27 ns | 15 ns | -700mA | 20V | SILICON | DRAIN | SWITCHING | -4V | 1.3W Ta | 0.7A | 5.6A | 100V | P-Channel | 200pF @ 25V | -4 V | 1.2 Ω @ 420mA, 10V | 4V @ 250μA | 700mA Ta | 8.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI8824EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8824edbt2e1-datasheets-8952.pdf | 4-XFBGA | 4 | 44 Weeks | Unknown | 60mOhm | 4 | EAR99 | BOTTOM | BALL | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 800mV | 500mW Ta | N-Channel | 400pF @ 10V | 75m Ω @ 1A, 4.5V | 800mV @ 250μA | 6nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5E035ATTCL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq5e035attcl-datasheets-8745.pdf | SC-96 | 3 | 20 Weeks | No SVHC | 38mOhm | 96 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | -2.5V | 1W Ta | P-Channel | 475pF @ 15V | 50m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5A Ta | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K09FU,LF | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SC-70, SOT-323 | 3 | 12 Weeks | EAR99 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 400mA | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | 150mW Ta | 0.4A | 1.7Ohm | N-Channel | 20pF @ 5V | 700m Ω @ 200MA, 10V | 1.8V @ 100μA | 400mA Ta | 3.3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STE88N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Chassis Mount | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste88n65m5-datasheets-8830.pdf | SOT-227-4 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STE88 | NOT SPECIFIED | 88A | 650V | 494W Tc | N-Channel | 8825pF @ 100V | 29m Ω @ 42A, 10V | 5V @ 250μA | 88A Tc | 204nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3460DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si3460ddvt1ge3-datasheets-8816.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 28mOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.7W | 1 | 6 ns | 11ns | 8 ns | 21 ns | 7.9A | 8V | SILICON | SWITCHING | 20V | 20V | 400mV | 1.7W Ta 2.7W Tc | N-Channel | 666pF @ 10V | 28m Ω @ 5.1A, 4.5V | 1V @ 250μA | 7.9A Tc | 18nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| RT1E050RPTR | ROHM Semiconductor | $2.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | DUAL | 260 | 8 | 10 | 1 | Other Transistors | Not Qualified | R-PDSO-F8 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.25W Ta | 5A | 20A | 0.036Ohm | P-Channel | 1300pF @ 10V | 36m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 13nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM40P10-40L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40p1040lge3-datasheets-8725.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | No | 150W | 1 | TO-263 (D2Pak) | 10 ns | 10ns | 20 ns | 63 ns | 40A | 20V | 100V | 150W Tc | P-Channel | 5295pF @ 25V | 40mOhm @ 17A, 10V | 2.5V @ 250μA | 40A Tc | 134nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ24NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | PCB, Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irlz24npbf-datasheets-8702.pdf | 55V | 17A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 60mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | Single | 30 | 45W | 1 | FET General Purpose Power | Not Qualified | 7.1 ns | 74ns | 29 ns | 20 ns | 18A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 45W Tc | TO-220AB | 90 ns | 72A | 68 mJ | 55V | N-Channel | 480pF @ 25V | 2 V | 60m Ω @ 11A, 10V | 2V @ 250μA | 18A Tc | 15nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| CSD19533Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd19533q5at-datasheets-8134.pdf | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD19533 | Single | NOT SPECIFIED | 1 | 6 ns | 6ns | 5 ns | 16 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | 3.2W Ta 96W Tc | 13A | 231A | 0.0111Ohm | 12.5 pF | 106 mJ | N-Channel | 2670pF @ 50V | 9.4m Ω @ 13A, 10V | 3.4V @ 250μA | 100A Ta | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| VN0808L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn0808lg-datasheets-8714.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 300mA | 30V | SILICON | SWITCHING | 1W Tc | 4Ohm | 80V | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 300mA Tj | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN0300L-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn0300lg-datasheets-8737.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 640mA | 30V | SILICON | SWITCHING | 1W Tc | 0.64A | 50 pF | 30V | N-Channel | 190pF @ 20V | 1.2 Ω @ 1A, 10V | 2.5V @ 1mA | 640mA Tj | 5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0702N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0702n3g-datasheets-8766.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 7 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 20ns | 20 ns | 30 ns | 530mA | 20V | SILICON | SWITCHING | 1W Tc | 0.6A | 60 pF | 20V | N-Channel | 200pF @ 20V | 1.3 Ω @ 500mA, 5V | 1V @ 1mA | 530mA Tj | 2V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4774DY-T1-GE3 | Vishay Siliconix | $1.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4774dyt1ge3-datasheets-8743.pdf | 8-SOIC (0.154, 3.90mm Width) | 13 Weeks | 540.001716mg | 9.5mOhm | 1 | 8-SO | 8 ns | 13ns | 9 ns | 14 ns | 16A | 20V | 30V | 5W Tc | 7.9mOhm | N-Channel | 1025pF @ 15V | 9.5mOhm @ 10A, 10V | 2.3V @ 1mA | 16A Tc | 14.3nC @ 4.5V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R360P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipaw60r360p7sxksa1-datasheets-8775.pdf | TO-220-3 Full Pack | 18.57mm | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 22W | 1 | 150°C | R-PSFM-T3 | 8 ns | 42 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 22W Tc | TO-220AB | 26A | 0.36Ohm | 27 mJ | 600V | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUZ11-NR4941 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-lm7918ct-datasheets-7491.pdf | TO-220-3 | 3 | 9 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 75W Tc | TO-220AB | 30A | 120A | 0.04Ohm | N-Channel | 2000pF @ 25V | 40m Ω @ 15A, 10V | 4V @ 1mA | 30A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2104V-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-dmp2104v7-datasheets-8789.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 3.005049mg | No SVHC | 150mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 170mW | 1 | Other Transistors | -950mA | 12V | SILICON | SWITCHING | 20V | -1V | 850mW Ta | -20V | P-Channel | 320pF @ 16V | 150m Ω @ 950mA, 4.5V | 1V @ 250μA | 2.1A Ta | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTX4N300P3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtx4n300p3hv-datasheets-8647.pdf | TO-247-3 Variant | 24 Weeks | unknown | 4A | 3000V | 960W Tc | N-Channel | 3680pF @ 25V | 12.5 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 139nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF530A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-irf530a-datasheets-8649.pdf | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 1.8g | No SVHC | 110MOhm | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 55W | 1 | Not Qualified | 13 ns | 14ns | 36 ns | 55 ns | 14A | 0V | SILICON | SWITCHING | 2V | 55W Tc | TO-220AB | 56A | 100V | N-Channel | 790pF @ 25V | 110m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 36nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQP13N10L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp13n10l-datasheets-8659.pdf | 100V | 12.8A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 180mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 65W | 1 | FET General Purpose Power | Not Qualified | 7.5 ns | 220ns | 72 ns | 22 ns | 12.8A | 20V | SILICON | SWITCHING | 2V | 65W Tc | TO-220AB | 95 mJ | 100V | N-Channel | 520pF @ 25V | 180m Ω @ 6.4A, 10V | 2V @ 250μA | 12.8A Tc | 12nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFZ46NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfz46npbf-datasheets-8669.pdf | 55V | 53A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | 40A | e3 | 55V | 250 | Single | 30 | 88W | 1 | FET General Purpose Power | Not Qualified | 14 ns | 76ns | 57 ns | 52 ns | 53A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 107W Tc | TO-220AB | 101 ns | 55V | N-Channel | 1696pF @ 25V | 4 V | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 53A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP055N03LGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp055n03lgxksa1-datasheets-8677.pdf | TO-220-3 | Lead Free | 13 Weeks | No SVHC | 3 | Halogen Free | 68W | PG-TO220-3 | 3.2nF | 6.7 ns | 5.2ns | 4 ns | 25 ns | 50A | 20V | 30V | 30V | 68W Tc | 4.6mOhm | N-Channel | 3200pF @ 15V | 5.5mOhm @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 31nC @ 10V | 5.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irlz44npbf-datasheets-8681.pdf | 55V | 47A | TO-220-3 | 10.5156mm | 19.8mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 22mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 1 | Single | 83W | 1 | 175°C | 11 ns | 84ns | 15 ns | 26 ns | 47A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 110W Tc | TO-220AB | 120 ns | 55V | N-Channel | 1700pF @ 25V | 2 V | 22m Ω @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| TN0604N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0604n3g-datasheets-8697.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | FET General Purpose Power | 10 ns | 6ns | 20 ns | 25 ns | 700mA | 20V | SILICON | SWITCHING | 740mW Ta | 0.7A | 0.75Ohm | 50 pF | 40V | N-Channel | 190pF @ 20V | 750m Ω @ 1.5A, 10V | 1.6V @ 1mA | 700mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STF19NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb19nf20-datasheets-2760.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STF19 | 3 | Single | 25W | 1 | FET General Purpose Power | 11.5 ns | 22ns | 11 ns | 19 ns | 7.5A | 20V | SILICON | SWITCHING | 3V | 25W Tc | TO-220AB | 60A | 200V | N-Channel | 800pF @ 25V | 160m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R085P7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r085p7auma1-datasheets-7519.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 154W Tc | 110A | 0.085Ohm | 118 mJ | N-Channel | 2180pF @ 400V | 85m Ω @ 11.8A, 10V | 4V @ 590μA | 39A Tc | 51nC @ 10V | 10V | ±20V |
