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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FCPF190N65FL1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf190n65fl1-datasheets-5409.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 2.27g | 190mOhm | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 11ns | 4.2 ns | 62 ns | 20.6A | 30V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 400 mJ | 650V | N-Channel | 3055pF @ 100V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20.6A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQPF10N50CF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf10n50cf-datasheets-5333.pdf | 500V | 10A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | 610mOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 48W | 1 | FET General Purpose Power | 29 ns | 80ns | 80 ns | 141 ns | 10A | 30V | SILICON | 48W Tc | 40A | 500V | N-Channel | 2096pF @ 25V | 610m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STB60NF10-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp60nf10-datasheets-7956.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | e3 | MATTE TIN | 225 | STB60N | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 56ns | 23 ns | 82 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 485 mJ | 100V | N-Channel | 4270pF @ 25V | 23m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 104nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHP12N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp12n60ege3-datasheets-3444.pdf | TO-220-3 | Lead Free | 19 Weeks | 6.000006g | 380mOhm | 3 | No | 1 | Single | 147W | 1 | TO-220AB | 937pF | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | 600V | 147W Tc | 320mOhm | 600V | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 380 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHF12N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf12n60ee3-datasheets-5348.pdf | TO-220-3 Full Pack | Lead Free | 6.000006g | Unknown | 380mOhm | 3 | No | 1 | Single | 33W | 1 | TO-220 Full Pack | 937pF | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | 600V | 2V | 33W Tc | 380mOhm | 600V | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 380 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHA240N60E-GE3 | Vishay Siliconix | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha240n60ege3-datasheets-5258.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 31W Tc | N-Channel | 783pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP14N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp14n50de3-datasheets-5260.pdf | TO-220-3 | 3 | 15 Weeks | 6.000006g | 3 | No | 1 | Single | 208W | 1 | 16 ns | 27ns | 26 ns | 29 ns | 14A | 30V | SILICON | SWITCHING | 500V | 500V | 208W Tc | TO-220AB | 0.4Ohm | 56 mJ | N-Channel | 1144pF @ 100V | 400m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SQP10250E_GE3 | Vishay Siliconix | $1.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp10250ege3-datasheets-5267.pdf | TO-220-3 | 12 Weeks | TO-220AB | 250V | 250W Tc | N-Channel | 4050pF @ 25V | 30mOhm @ 15A, 10V | 3.5V @ 250μA | 53A Tc | 75nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF190N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf190n60e-datasheets-5269.pdf | TO-220-3 Full Pack | 10.36mm | 9.19mm | 4.9mm | Lead Free | 15 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 39W | 1 | FET General Purpose Power | 23 ns | 38ns | 40 ns | 212 ns | 20.6A | 20V | 600V | 2.5V | 39W Tc | 650V | N-Channel | 3175pF @ 25V | 190m Ω @ 10A, 10V | 3.5V @ 250μA | 20.6A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FCP190N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcpf190n60e-datasheets-5269.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 14 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | 23 ns | 14ns | 15 ns | 101 ns | 20.6A | 20V | 600V | 2.5V | 208W Tc | N-Channel | 3175pF @ 25V | 190m Ω @ 10A, 10V | 3.5V @ 250μA | 20.6A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHP20N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sihp20n50ege3-datasheets-5294.pdf | TO-220-3 | 3 | 18 Weeks | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 17 ns | 27ns | 25 ns | 48 ns | 19A | 20V | SILICON | SWITCHING | 500V | 500V | 4V | 179W Tc | TO-220AB | 42A | 204 mJ | N-Channel | 1640pF @ 100V | 184m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRFIB7N50APBF | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfib7n50apbf-datasheets-5299.pdf | 500V | 6.6A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 520MOhm | 3 | No | 1 | Single | 60W | 1 | TO-220-3 | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 6.6A | 30V | 500V | 4V | 60W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 520mOhm @ 4A, 10V | 4V @ 250μA | 6.6A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| AOT190A60L | Alpha & Omega Semiconductor Inc. | $0.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU7N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw7n105k5-datasheets-8468.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STU7N | NOT SPECIFIED | FET General Purpose Power | 4A | Single | 1050V | 110W Tc | 4A | N-Channel | 380pF @ 100V | 2 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF10N60ZUT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-fdpf10n60zut-datasheets-5313.pdf | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 42W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 40ns | 60 ns | 95 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 42W Tc | TO-220AB | 9A | 36A | 0.8Ohm | 600V | N-Channel | 1980pF @ 25V | 800m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STF11NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf11nm50n-datasheets-5320.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 470MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF11 | 3 | Single | 25W | 1 | FET General Purpose Power | 8 ns | 10ns | 10 ns | 33 ns | 8.5A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 25W Tc | TO-220AB | 9A | 500V | N-Channel | 547pF @ 50V | 470m Ω @ 4.5A, 10V | 4V @ 250μA | 8.5A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| FDP19N40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp19n40-datasheets-5324.pdf | TO-220-3 | Lead Free | 3 | 5 Weeks | 1.8g | 240MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 215W | 1 | FET General Purpose Power | Not Qualified | 31 ns | 70ns | 49 ns | 82 ns | 19A | 30V | SILICON | SWITCHING | 215W Tc | TO-220AB | 76A | 542 mJ | 400V | N-Channel | 2115pF @ 25V | 240m Ω @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STF45N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf45n10f7-datasheets-5236.pdf | TO-220-3 Full Pack | 10.6mm | 16.4mm | 4.6mm | Lead Free | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF45N | 1 | Single | NOT SPECIFIED | 15 ns | 17ns | 8 ns | 24 ns | 30A | 20V | 100V | 25W Tc | N-Channel | 1640pF @ 50V | 18m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 25nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDA16N50-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fda16n50f109-datasheets-5240.pdf | TO-3P-3, SC-65-3 | 3 | 4 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | AVALANCHE RATED | No | e3 | TIN | 260 | Single | 205W | 1 | FET General Purpose Power | 40 ns | 150ns | 80 ns | 65 ns | 16.5A | 30V | SILICON | SWITCHING | 5V | 205W Tc | 66A | 780 mJ | 500V | N-Channel | 1945pF @ 25V | 380m Ω @ 8.3A, 10V | 5V @ 250μA | 16.5A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP110N55F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | Lead Free | EAR99 | No | e3 | Tin (Sn) | STP110 | 150W | 1 | FET General Purpose Power | 110A | 20V | Single | 150W Tc | 55V | N-Channel | 8350pF @ 25V | 5.2m Ω @ 60A, 10V | 4V @ 250μA | 110A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF6N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihf6n65ege3-datasheets-5252.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | Tin | NOT SPECIFIED | Single | NOT SPECIFIED | 31W | 1 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 7A | 0.6Ohm | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| CSD18502KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | NOT SPECIFIED | CSD18502 | Single | NOT SPECIFIED | 216W | 1 | FET General Purpose Power | 11 ns | 7.3ns | 9.3 ns | 33 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 1.8V | 259W Tc | 400A | 26 pF | N-Channel | 4680pF @ 20V | 1.8 V | 2.9m Ω @ 100A, 10V | 2.1V @ 250μA | 100A Tc | 62nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SIHA15N50E-E3 | Vishay Siliconix | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha15n50ee3-datasheets-5196.pdf | TO-220-3 Full Pack | 3 | 14 Weeks | 6.000006g | Unknown | 243mOhm | 3 | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 14.5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 4V | 33W Tc | TO-220AB | 28A | N-Channel | 1162pF @ 100V | 280m Ω @ 7.5A, 10V | 4V @ 250μA | 14.5A Tc | 66nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFB8405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfb8405-datasheets-5201.pdf | TO-220-3 | 10.67mm | 9.02mm | 3.43mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | No | 1 | Single | 163W | FET General Purpose Power | 14 ns | 128ns | 77 ns | 55 ns | 120A | 20V | 40V | 3V | 163W Tc | N-Channel | 5193pF @ 25V | 3 V | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 161nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPA95R450P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa95r450p7xksa1-datasheets-5208.pdf | TO-220-3 Full Pack | 18 Weeks | 950V | 30W Tc | N-Channel | 1053pF @ 400V | 450m Ω @ 7.2A, 10V | 3.5V @ 360μA | 14A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N85XM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n85xm-datasheets-5212.pdf | TO-220-3 Full Pack | 19 Weeks | yes | 850V | 35W Tc | N-Channel | 247pF @ 25V | 2.5 Ω @ 2A, 10V | 5.5V @ 250μA | 3.5A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK3R2A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF165N65S3R0L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcpf165n65s3r0l-datasheets-5215.pdf | TO-220-3 Full Pack | 12 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 35W Tc | N-Channel | 1415pF @ 400V | 165m Ω @ 9.5A, 10V | 4.5V @ 1.9mA | 19A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-06_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n0606ge3-datasheets-5221.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 175W Tc | N-Channel | 6495pF @ 25V | 6mOhm @ 30A, 10V | 3.5V @ 250μA | 119A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP240N60E-GE3 | Vishay Siliconix | $0.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp240n60ege3-datasheets-5223.pdf | TO-220-3 | 18 Weeks | TO-220AB | 600V | 78W Tc | N-Channel | 795pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V |
