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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSM180C12P2E202 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 175°C TJ | Tray | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-bsm180c12p2e202-datasheets-5684.pdf | Module | 25 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V | 1360W Tc | N-Channel | 20000pF @ 10V | 4V @ 35.2mA | 204A Tc | +22V, -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH130N15X4 | IXYS | $11.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp130n15x4-datasheets-7535.pdf | TO-247-3 | 15 Weeks | 150V | 400W Tc | N-Channel | 4770pF @ 25V | 8.5m Ω @ 70A, 10V | 4.5V @ 250μA | 130A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX52N100X | IXYS | $30.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk52n100x-datasheets-5671.pdf | TO-247-3 | 19 Weeks | 1000V | 1250W Tc | N-Channel | 6725pF @ 25V | 125m Ω @ 26A, 10V | 6V @ 4mA | 52A Tc | 245nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN300N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfn300n10p-datasheets-5694.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 295A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 1070W Tc | 900A | 0.0055Ohm | 3000 mJ | N-Channel | 23000pF @ 25V | 5.5m Ω @ 50A, 10V | 5V @ 8mA | 295A Tc | 279nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFT16N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfh16n120p-datasheets-2331.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 660W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28ns | 35 ns | 66 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 660W Tc | 35A | 0.95Ohm | 800 mJ | 1.2kV | N-Channel | 6900pF @ 25V | 950m Ω @ 500mA, 10V | 6.5V @ 1mA | 16A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTN8N150L | IXYS | $42.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn8n150l-datasheets-5698.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 24 Weeks | 4 | yes | UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 7.5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1500V | 1500V | 545W Tc | 20A | N-Channel | 8000pF @ 25V | 3.6 Ω @ 4A, 20V | 8V @ 250μA | 7.5A Tc | 250nC @ 15V | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STW62NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STW62N | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | 30 ns | 35ns | 210 ns | 65 ns | 65A | 25V | SILICON | SWITCHING | 450W Tc | 55A | 220A | 0.048Ohm | 600V | N-Channel | 5800pF @ 100V | 49m Ω @ 32.5A, 10V | 4V @ 250μA | 65A Tc | 174nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| IXTH150N15X4 | IXYS | $10.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp150n15x4-datasheets-5515.pdf | TO-247-3 | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 7.2m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB62N80Q3 | IXYS | $35.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfb62n80q3-datasheets-5706.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | 264 | No | 3 | Single | 1.56kW | 1 | FET General Purpose Power | R-PSIP-T3 | 54 ns | 300ns | 62 ns | 62A | 30V | SILICON | DRAIN | SWITCHING | 1560W Tc | 5000 mJ | 800V | N-Channel | 13600pF @ 25V | 140m Ω @ 31A, 10V | 6.5V @ 8mA | 62A Tc | 270nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| MSC040SMA120J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | SOT-227-4, miniBLOC | 19 Weeks | SOT-227 (ISOTOP®) | 1.2kV | 208W Tc | N-Channel | 1990pF @ 1000V | 50mOhm @ 40A, 20V | 2.8V @ 1mA | 53A Tc | 137nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSC080SMA120J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | SOT-227-4, miniBLOC | 19 Weeks | SOT-227 (ISOTOP®) | 1.2kV | N-Channel | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK52N100X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk52n100x-datasheets-5671.pdf | TO-264-3, TO-264AA | 19 Weeks | 1000V | 1250W Tc | N-Channel | 6725pF @ 25V | 125m Ω @ 26A, 10V | 6V @ 4mA | 52A Tc | 245nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMW65R048M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN170N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfn170n30p-datasheets-5674.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 890W | 1 | FET General Purpose Power | 29ns | 16 ns | 79 ns | 138A | 30V | SILICON | ISOLATED | SWITCHING | 890W Tc | 500A | 5000 mJ | 300V | N-Channel | 20000pF @ 25V | 18m Ω @ 85A, 10V | 4.5V @ 1mA | 138A Tc | 258nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFT32N100XHV | IXYS | $20.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft32n100xhv-datasheets-5642.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 1000V | 890W Tc | N-Channel | 4075pF @ 25V | 220m Ω @ 16A, 10V | 6V @ 4mA | 32A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH32N100X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft32n100xhv-datasheets-5642.pdf | TO-247-3 | 19 Weeks | 1000V | 890W Tc | N-Channel | 4075pF @ 25V | 220m Ω @ 16A, 10V | 6V @ 4mA | 32A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK32N100X | IXYS | $17.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft32n100xhv-datasheets-5642.pdf | TO-264-3, TO-264AA | 19 Weeks | 1000V | 890W Tc | N-Channel | 4075pF @ 25V | 220m Ω @ 16A, 10V | 6V @ 4mA | 32A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL100N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfl100n50p-datasheets-5679.pdf | ISOPLUS264™ | Lead Free | 3 | 26 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 2.5kV | 29ns | 26 ns | 110 ns | 70A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 625W Tc | 250A | 0.052Ohm | 5000 mJ | 500V | N-Channel | 20000pF @ 25V | 52m Ω @ 50A, 10V | 5V @ 8mA | 70A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFH150N17T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfh150n17t2-datasheets-5648.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 880mW | 1 | FET General Purpose Power | 16ns | 20 ns | 50 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 175V | 880W Tc | 400A | N-Channel | 14600pF @ 25V | 12m Ω @ 75A, 10V | 4.5V @ 1mA | 150A Tc | 233nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFR48N60P | IXYS | $17.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr48n60p-datasheets-5650.pdf | 600V | 48A | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 25ns | 22 ns | 85 ns | 32A | 30V | SILICON | ISOLATED | SWITCHING | 300W Tc | 110A | 0.15Ohm | 2000 mJ | 600V | N-Channel | 8860pF @ 25V | 150m Ω @ 24A, 10V | 5V @ 8mA | 32A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFB82N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfb82n60p-datasheets-5652.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.25kW | 1 | Not Qualified | 23ns | 24 ns | 79 ns | 82A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 200A | 0.075Ohm | 5000 mJ | 600V | N-Channel | 23000pF @ 25V | 75m Ω @ 41A, 10V | 5V @ 8mA | 82A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTH11P50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixth11p50-datasheets-5654.pdf | -500V | -11A | TO-247-3 | Lead Free | 3 | 17 Weeks | 750MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | Other Transistors | 27ns | 35 ns | 35 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | TO-247AD | 44A | -500V | P-Channel | 4700pF @ 25V | 750m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK20J60W,S1VE | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT16N10D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/ixys-ixtt16n10d2-datasheets-5658.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 19 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 830W Tc | 0.064Ohm | N-Channel | 5700pF @ 25V | 64m Ω @ 8A, 0V | 16A Tc | 225nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IMW65R072M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT240N15X4HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth240n15x4-datasheets-5560.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 15 Weeks | 150V | 940W Tc | N-Channel | 8900pF @ 25V | 4.4m Ω @ 120A, 10V | 4.5V @ 250μA | 240A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT12N150 | IXYS | $14.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt12n150-datasheets-5663.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 3 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 890W | 1 | FET General Purpose Power | R-PSSO-G2 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 890W Tc | 40A | 2Ohm | 750 mJ | N-Channel | 3720pF @ 25V | 2 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 106nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SQP120N10-09_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqp120n1009ge3-datasheets-5665.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 375W Tc | TO-220AB | 120A | 480A | 0.0095Ohm | 266 mJ | N-Channel | 8645pF @ 25V | 9.5m Ω @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS40N60KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfps40n60kpbf-datasheets-5634.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 130MOhm | 3 | No | 1 | Single | 570W | 1 | SUPER-247™ (TO-274AA) | 7.97nF | 47 ns | 110ns | 60 ns | 97 ns | 40A | 30V | 600V | 5V | 570W Tc | 130mOhm | 600V | N-Channel | 7970pF @ 25V | 130mOhm @ 24A, 10V | 5V @ 250μA | 40A Tc | 330nC @ 10V | 130 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTH6N150 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixth6n150-datasheets-5601.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 540W Tc | 6A | 24A | 500 mJ | N-Channel | 2230pF @ 25V | 3.5 Ω @ 500mA, 10V | 5V @ 250μA | 6A Tc | 67nC @ 10V | 10V | ±20V |
