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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF9610SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf9610spbf-datasheets-1353.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3W | 1 | D2PAK | 170pF | 8 ns | 15ns | 8 ns | 1 ns | -1.8A | 20V | 200V | -4V | 3W Ta 20W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFT100N30X3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh100n30x3-datasheets-5802.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 300V | 480W Tc | N-Channel | 7.66nF @ 25V | 13.5m Ω @ 50A, 10V | 4.5V @ 4mA | 100A Tc | 122nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP7N80C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqpf7n80c-datasheets-5040.pdf | 800V | 6.6A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 1.5Ohm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 167W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 100ns | 60 ns | 50 ns | 6.6A | 30V | 800V | SILICON | SWITCHING | 5V | 167W Tc | TO-220AB | 26.4A | 580 mJ | 800V | N-Channel | 1680pF @ 25V | 5 V | 1.9 Ω @ 3.3A, 10V | 5V @ 250μA | 6.6A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFK140N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk140n20p-datasheets-1371.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 18MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | R-PSFM-T3 | 35ns | 90 ns | 150 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 830W Tc | 280A | 4000 mJ | 200V | N-Channel | 7500pF @ 25V | 18m Ω @ 70A, 10V | 5V @ 4mA | 140A Tc | 240nC @ 10V | 10V 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTH30N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth30n60p-datasheets-1373.pdf | 600V | 30A | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | TO-247AD | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 5050pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFH30N85X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n85x-datasheets-1375.pdf | TO-247-3 | 19 Weeks | yes | 850V | 695W Tc | N-Channel | 2460pF @ 25V | 220m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 30A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N15-21-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sup85n1521e3-datasheets-1315.pdf | 150V | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 14 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 300W | 1 | FET General Purpose Power | 22 ns | 170ns | 170 ns | 40 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 2.4W Ta 300W Tc | TO-220AB | 150V | N-Channel | 4750pF @ 25V | 2 V | 21m Ω @ 30A, 10V | 4V @ 250μA | 85A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRLIZ44GPBF | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz44gpbf-datasheets-1320.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 28mOhm | 3 | No | 1 | Single | TO-220-3 | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 30A | 10V | 60V | 2V | 48W Tc | 28mOhm | N-Channel | 3300pF @ 25V | 28mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IPA65R190C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r190c7xksa1-datasheets-1254.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 11 ns | 9 ns | 54 ns | 8A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 8A | 49A | 0.19Ohm | 57 mJ | N-Channel | 1150pF @ 400V | 190m Ω @ 5.7A, 10V | 4V @ 290μA | 8A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FCPF165N65S3L1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcpf165n65s3l1-datasheets-1260.pdf | TO-220-3 Full Pack | 14 Weeks | 2.27g | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 35W Tc | N-Channel | 1415pF @ 400V | 165m Ω @ 9.5A, 10V | 4.5V @ 1.9mA | 19A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ200N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtq200n10t-datasheets-6377.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 8 Weeks | 5.5MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | 31ns | 34 ns | 45 ns | 200A | SILICON | DRAIN | SWITCHING | 550W Tc | 500A | 1500 mJ | 100V | N-Channel | 9400pF @ 25V | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPP65R150CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 12.4 ns | 7.6ns | 5.6 ns | 52.8 ns | 22.4A | 30V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 195.3W Tc | TO-220AB | 72A | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF634PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf634pbf-datasheets-1281.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 450mOhm | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | 250V | 4V | 74W Tc | 450mOhm | N-Channel | 770pF @ 25V | 4 V | 450mOhm @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK35N65W,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247 | 4.1nF | 70 ns | 30ns | 8 ns | 150 ns | 35A | 30V | 650V | 270W Tc | 68mOhm | 650V | N-Channel | 4100pF @ 300V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 35A Ta | 100nC @ 10V | 80 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh26n60p-datasheets-1292.pdf | 600V | 26A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 25 ns | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | TO-247AD | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 4mA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FDMA037N08LC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdma037n08lc-datasheets-1294.pdf | 6-WDFN Exposed Pad | 20 Weeks | yes | compliant | 80V | 2.4W Ta | N-Channel | 595pF @ 40V | 36.5m Ω @ 4A, 10V | 2.5V @ 20μA | 6A Tc | 9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP10250E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sup10250ege3-datasheets-1297.pdf | TO-220-3 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 250V | 375W Tc | N-Channel | 4V @ 250μA | 63A Tc | 88nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP054PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfp054pbf-datasheets-1299.pdf | 60V | 70A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 8 Weeks | 38.000013g | 14mOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 230W | 1 | 20 ns | 160ns | 150 ns | 83 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 540 ns | 60V | N-Channel | 4500pF @ 25V | 14m Ω @ 54A, 10V | 4V @ 250μA | 70A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AOT2606L | Alpha & Omega Semiconductor Inc. | $4.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 115W | 1 | 72A | 20V | 60V | 2.1W Ta 115W Tc | N-Channel | 4050pF @ 30V | 6.5m Ω @ 20A, 10V | 3.5V @ 250μA | 13A Ta 72A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK17N65W,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | TO-247 | 1.8nF | 17.3A | 650V | 165W Tc | N-Channel | 1800pF @ 300V | 200mOhm @ 8.7A, 10V | 3.5V @ 900μA | 17.3A Ta | 45nC @ 10V | 200 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK28A65W,S5X | Toshiba Semiconductor and Storage | $4.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 3nF | 27.6A | 650V | 45W Tc | N-Channel | 3000pF @ 300V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 27.6A Ta | 75nC @ 10V | 110 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP18N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp18n50ce3-datasheets-1241.pdf&product=vishaysiliconix-sihp18n50ce3-6849922 | TO-220-3 | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 270mOhm | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | 223W | 1 | FET General Purpose Powers | 80 ns | 27ns | 44 ns | 32 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 5V | 223W Tc | TO-220AB | 72A | N-Channel | 2942pF @ 25V | 5 V | 270m Ω @ 10A, 10V | 5V @ 250μA | 18A Tc | 76nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| NTMYS3D5N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys3d5n04ctwg-datasheets-1249.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 68W Tc | N-Channel | 1600pF @ 25V | 3.3m Ω @ 50A, 10V | 3.5V @ 60μA | 24A Ta 102A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR214TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 2.5W Ta 25W Tc | TO-252AA | 8.8A | 2Ohm | N-Channel | 140pF @ 25V | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB80N06S407ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb80n06s407atma2-datasheets-1177.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Lead Free | 2 | 16 Weeks | 1.946308g | yes | not_compliant | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 79W | 1 | R-PSSO-G2 | 15 ns | 3ns | 5 ns | 23 ns | 80A | 20V | 60V | SILICON | DRAIN | 79W Tc | 320A | 7.1mOhm | N-Channel | 4500pF @ 25V | 4V @ 40μA | 80A Tc | 56nC @ 10V | 7.1 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK100A06N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 10.5nF | 110 ns | 67ns | 64 ns | 180 ns | 100A | 20V | 60V | 45W Tc | 2.2mOhm | 60V | N-Channel | 10500pF @ 30V | 2.7mOhm @ 50A, 10V | 4V @ 1mA | 100A Tc | 140nC @ 10V | 2.7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK14N65W,S1F | Toshiba Semiconductor and Storage | $4.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247 | 1.3nF | 60 ns | 20ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 130W Tc | 220mOhm | 650V | N-Channel | 1300pF @ 300V | 250mOhm @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 250 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB41N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfb41n15dpbf-datasheets-1190.pdf | 150V | 41A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 200W | 1 | FET General Purpose Power | 16 ns | 63ns | 14 ns | 25 ns | 41A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5.5V | 200W Tc | TO-220AB | 260 ns | 0.045Ohm | 470 mJ | 150V | N-Channel | 2520pF @ 25V | 5.5 V | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| HUF75545P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75545s3st-datasheets-0987.pdf | 80V | 75A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 4.535924g | No SVHC | 10mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 75A | e3 | Tin (Sn) | 80V | Single | 270W | 1 | FET General Purpose Power | 14 ns | 125ns | 90 ns | 40 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 270W Tc | TO-220AB | 80V | N-Channel | 3750pF @ 25V | 10m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 235nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FDPF14N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf14n30-datasheets-1208.pdf | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 290MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 35W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 105ns | 75 ns | 30 ns | 14A | 30V | 300V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 56A | 300V | N-Channel | 1060pF @ 25V | 5 V | 290m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 25nC @ 10V | 10V | ±30V |
