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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TT8U2TR | ROHM Semiconductor | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-tt8u2tr-datasheets-1493.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | 8 | EAR99 | No | DUAL | 1 | 9 ns | 25ns | 45 ns | 55 ns | 2.4A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.25W Ta | 0.105Ohm | P-Channel | 850pF @ 10V | 105m Ω @ 2.4A, 4.5V | 1V @ 1mA | 2.4A Ta | 6.7nC @ 4.5V | Schottky Diode (Isolated) | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y2R5-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7y2r540hx-datasheets-1703.pdf | SC-100, SOT-669 | 12 Weeks | compliant | 4 | 40V | 190W Ta | N-Channel | 4790pF @ 25V | 2.5m Ω @ 25A, 10V | 3.6V @ 1mA | 120A Ta | 79nC @ 10V | 10V | +20V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R7-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn1r730yl115-datasheets-1638.pdf | SC-100, SOT-669 | 4 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | Not Qualified | R-PSSO-G4 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 109W Tc | MO-235 | 790A | 0.0026Ohm | 241 mJ | N-Channel | 5057pF @ 12V | 1.7m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 77.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIRA22DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira22dpt1re3-datasheets-1727.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | 1 | 5W | 150°C | 18 ns | 35 ns | 60A | 83.3W Tc | 25V | N-Channel | 7570pF @ 10V | 0.76m Ω @ 15A, 10V | 2.2V @ 250μA | 60A Tc | 155nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW24N60C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw24n60c3fksa1-datasheets-1733.pdf | 650V | 24.3A | TO-247-3 | 16.03mm | 21.1mm | 5.16mm | Lead Free | 3 | No SVHC | 3 | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 240W | 1 | Not Qualified | 13 ns | 21ns | 14 ns | 140 ns | 24.3A | 20V | SILICON | SWITCHING | 3V | 240W Tc | 72.9A | 0.16Ohm | 780 mJ | 650V | N-Channel | 3000pF @ 25V | 160m Ω @ 15.4A, 10V | 3.9V @ 1.2mA | 24.3A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STB3NK60ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb3nk60zt4-datasheets-1527.pdf | 600V | 2.4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | No SVHC | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB3N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 14ns | 14 ns | 19 ns | 1.2A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 9.6A | 600V | N-Channel | 311pF @ 25V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.4A Tc | 11.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STD3N40K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3n40k3-datasheets-1588.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STD3N | Single | 30W | 1 | FET General Purpose Power | 7 ns | 8ns | 14 ns | 18 ns | 2A | 30V | 30W Tc | 2A | 400V | N-Channel | 165pF @ 50V | 3.4 Ω @ 900mA, 10V | 4.5V @ 50μA | 2A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ050N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsz050n03msgatma1-datasheets-1536.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | R-PDSO-N5 | 6.7 ns | 4.2ns | 3.2 ns | 26 ns | 15A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 48W Tc | 40A | 0.0057Ohm | 70 mJ | N-Channel | 3600pF @ 15V | 4.5m Ω @ 20A, 10V | 2V @ 250μA | 15A Ta 40A Tc | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP15N50L2 | IXYS | $31.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp15n50l2-datasheets-1635.pdf | TO-220-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 300W Tc | TO-220AB | 0.48Ohm | 750 mJ | N-Channel | 4080pF @ 25V | 2.5 V | 480m Ω @ 7.5A, 10V | 4.5V @ 250μA | 15A Tc | 123nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFH52N50P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n50p2-datasheets-1534.pdf | TO-247-3 | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 52A | 30V | SILICON | DRAIN | SWITCHING | 960W Tc | 150A | 0.12Ohm | 1500 mJ | 500V | N-Channel | 6800pF @ 25V | 120m Ω @ 26A, 10V | 4.5V @ 4mA | 52A Tc | 113nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT22F80B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt22f80b-datasheets-1550.pdf | 800V | 22A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 33 Weeks | 38.000013g | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 26 ns | 38ns | 33 ns | 115 ns | 23A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 625W Tc | 85A | 0.43Ohm | 975 mJ | N-Channel | 4595pF @ 25V | 500m Ω @ 12A, 10V | 5V @ 1mA | 23A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFK24N100Q3 | IXYS | $24.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk24n100q3-datasheets-1553.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 1kW | 1 | FET General Purpose Power | 38 ns | 300ns | 45 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1000W Tc | 60A | 0.44Ohm | 2000 mJ | 1kV | N-Channel | 7200pF @ 25V | 440m Ω @ 12A, 10V | 6.5V @ 4mA | 24A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STL12P6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl12p6f6-datasheets-1544.pdf | 8-PowerVDFN | 20 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STL12 | 6.4 ns | 5.3ns | 3.7 ns | 14 ns | 4A | 20V | 60V | 75W Tc | -60V | P-Channel | 340pF @ 48V | 160m Ω @ 1.5A, 10V | 4V @ 250μA | 4A Tc | 6.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10021JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10021jfll-datasheets-1562.pdf | 1kV | 37A | SOT-227-4, miniBLOC | Lead Free | 4 | 16 Weeks | 4 | yes | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 694W | 1 | FET General Purpose Power | 29 ns | 22ns | 20 ns | 80 ns | 37A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 694W Tc | 3600 mJ | N-Channel | 9750pF @ 25V | 210m Ω @ 18.5A, 10V | 5V @ 5mA | 37A Tc | 395nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STL4P3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ H6 | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl4p3llh6-datasheets-1547.pdf | 6-PowerWDFN | 20 Weeks | 6 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL4 | NOT SPECIFIED | Other Transistors | 4A | Single | 30V | 2.4W Ta | 4A | P-Channel | 639pF @ 25V | 56m Ω @ 2A, 10V | 2.5V @ 250μA | 4A Ta | 6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7675-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-buk7675100a118-datasheets-1584.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 245 | 3 | Single | 30 | 99W | 1 | R-PSSO-G2 | 8 ns | 39ns | 24 ns | 26 ns | 23A | 20V | 100V | SILICON | DRAIN | SWITCHING | 99W Tc | 92A | 0.075Ohm | 100 mJ | 100V | N-Channel | 1210pF @ 25V | 75m Ω @ 13A, 10V | 4V @ 1mA | 23A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STQ2LN60K3-AP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stq2ln60k3ap-datasheets-1480.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 9 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STQ2 | 2.5W | 10 ns | 8.5ns | 21 ns | 23.5 ns | 600mA | 30V | 2.5W Tc | 600V | N-Channel | 235pF @ 50V | 4.5 Ω @ 1A, 10V | 4.5V @ 50μA | 600mA Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R5-30YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r530ylc115-datasheets-1594.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | No SVHC | 5 | HIGH RELIABILITY | No | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | 61W | 1 | R-PSSO-G4 | 17.2 ns | 18.7ns | 8.75 ns | 24.3 ns | 84A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.54V | 61W Tc | 336A | 30V | N-Channel | 1324pF @ 15V | 4.8m Ω @ 20A, 10V | 1.95V @ 1mA | 84A Tc | 20.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RSH070N05GZETB | ROHM Semiconductor | $2.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsh070n05gzetb-datasheets-1531.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 7A | 45V | 2W Ta | N-Channel | 1000pF @ 10V | 25m Ω @ 7A, 10V | 2.5V @ 1mA | 7A Ta | 16.8nC @ 5V | 4V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK32N100Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n100q3-datasheets-1617.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 20 Weeks | 3 | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 45 ns | 250ns | 54 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1250W Tc | 96A | 1kV | N-Channel | 9940pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 8mA | 32A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFK64N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk64n50p-datasheets-1510.pdf | 500V | 64A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 85MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | 25ns | 22 ns | 85 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 830W Tc | 150A | 2500 mJ | 500V | N-Channel | 8700pF @ 25V | 85m Ω @ 32A, 10V | 5.5V @ 8mA | 64A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFK44N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk44n50p-datasheets-1512.pdf | 500V | 44A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 140MOhm | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | R-PSFM-T3 | 29ns | 27 ns | 85 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 658W Tc | 110A | 1700 mJ | 500V | N-Channel | 5440pF @ 25V | 140m Ω @ 22A, 10V | 5V @ 4mA | 44A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH26N50P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixfp26n50p3-datasheets-1510.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 30 Weeks | 3 | EAR99 | No | Single | 500W | 1 | 21 ns | 38 ns | 26A | 30V | 500V | 500W Tc | N-Channel | 2220pF @ 25V | 230m Ω @ 13A, 10V | 5V @ 4mA | 26A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMCM4401VNEAZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmcm4401vneaz-datasheets-1411.pdf | 4-XFBGA, WLCSP | 4 | 13 Weeks | IEC-60134 | BOTTOM | BALL | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PBGA-B4 | 4.7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 400mW Ta 12.5W Tc | 0.054Ohm | N-Channel | 335pF @ 6V | 42m Ω @ 3A, 4.5V | 900mV @ 250μA | 4.7A Ta | 9nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKH70N60C5 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixkh70n60c5-datasheets-1525.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | 45MOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 625W | 1 | FET General Purpose Power | 20ns | 10 ns | 100 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 70A Tc | 190nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N100Q3 | IXYS | $3.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100q3-datasheets-1455.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | Lead Free | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | 1 | Single | 690W | 1 | FET General Purpose Power | 28 ns | 250ns | 30 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 690W Tc | 45A | 1kV | N-Channel | 3250pF @ 25V | 1.05 Ω @ 7.5A, 10V | 6.5V @ 4mA | 15A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH270N06T3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiperFET™, TrenchT3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh270n06t3-datasheets-1458.pdf | TO-247-3 | 30 Weeks | yes | 270A | 60V | 480W Tc | N-Channel | 12600pF @ 25V | 3.1m Ω @ 100A, 10V | 4V @ 250μA | 270A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R190C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r190c6atma1-datasheets-1817.pdf | TO-247-3 | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 151W Tc | 20.2A | 59A | 0.19Ohm | 418 mJ | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R160P6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r160p6xksa1-datasheets-1896.pdf | TO-247-3 | Lead Free | 18 Weeks | 3 | PG-TO247-3 | 2.08nF | 12.5 ns | 7.6ns | 5.8 ns | 40 ns | 23.8A | 20V | 600V | 600V | 176W Tc | 144mOhm | N-Channel | 2080pF @ 100V | 160mOhm @ 9A, 10V | 4.5V @ 750μA | 23.8A Tc | 44nC @ 10V | 160 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH34N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixfh34n65x2-datasheets-1475.pdf | TO-247-3 | 19 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 34A | 650V | 540W Tc | N-Channel | 3330pF @ 25V | 105m Ω @ 17A, 10V | 5.5V @ 2.5mA | 34A Tc | 56nC @ 10V | 10V | ±30V |
