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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PSMN4R3-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r380ps127-datasheets-9552.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 306W | 1 | 38 ns | 29ns | 33 ns | 94 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 306W Tc | TO-220AB | 676 mJ | 80V | N-Channel | 8161pF @ 40V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 111nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPL65R099C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipl65r099c7auma1-datasheets-9557.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 11 ns | 5ns | 12 ns | 89 ns | 21A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 128W Tc | 100A | 0.099Ohm | 118 mJ | N-Channel | 2140pF @ 400V | 99m Ω @ 5.9A, 10V | 4V @ 590μA | 21A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP12N70X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | compliant | 700V | 40W Tc | N-Channel | 960pF @ 25V | 300m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH48N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 48A | 200V | 275W Tc | N-Channel | 48A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5021ANJTL | ROHM Semiconductor | $4.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | No | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 47 ns | 70ns | 70 ns | 200 ns | 21A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100W Tc | 84A | 0.22Ohm | 29.6 mJ | 500V | N-Channel | 2300pF @ 25V | 220m Ω @ 10.5A, 10V | 4.5V @ 1mA | 21A Tc | 64nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFP18N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT020N10N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipt020n10n5atma1-datasheets-9570.pdf | 8-PowerSFN | 8 | 18 Weeks | compliant | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 273W Tc | 31A | 1039A | 0.002Ohm | 406 mJ | N-Channel | 11000pF @ 50V | 2m Ω @ 150A, 10V | 3.8V @ 202μA | 31A Ta 260A Tc | 152nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R199CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r199cpfksa1-datasheets-9528.pdf | 600V | 16A | TO-247-3 | Lead Free | 3 | 3 | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 139W | 1 | Not Qualified | 10 ns | 5ns | 50 ns | 16A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 139W Tc | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 16A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TK15A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | Single | 50W | 50ns | 25 ns | 15A | 30V | 50W Tc | 600V | N-Channel | 2600pF @ 25V | 370m Ω @ 7.5A, 10V | 4V @ 1mA | 15A Ta | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP22N65X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 37W Tc | N-Channel | 2190pF @ 25V | 145m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMT1D3N08B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmt1d3n08b-datasheets-9485.pdf | 8-PowerVDFN | 20 Weeks | 248.52072mg | ACTIVE (Last Updated: 5 days ago) | yes | Single | 80V | 178W Tc | N-Channel | 19600pF @ 40V | 1.35m Ω @ 36A, 10V | 4V @ 250μA | 164A Tc | 260nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R150CFDAAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r150cfdaaksa1-datasheets-9489.pdf | TO-220-3 | Contains Lead | 3 | 18 Weeks | 3 | no | HIGH RELIABILITY | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | 12.4 ns | 7.6ns | 5.6 ns | 52.8 ns | 22.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 195.3W Tc | TO-220AB | 72A | 0.15Ohm | 614 mJ | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPC300N20N3X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc300n20n3x7sa1-datasheets-9493.pdf | Lead Free | 18 Weeks | Halogen Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R104C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl60r104c7auma1-datasheets-9495.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 20A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 122W Tc | 83A | 97 mJ | N-Channel | 1819pF @ 400V | 104m Ω @ 9.7A, 10V | 4V @ 490μA | 20A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTA230N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 480W Tc | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP50N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta50n20p-datasheets-3223.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 26 ns | 35ns | 30 ns | 70 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 120A | 0.06Ohm | 1000 mJ | 200V | N-Channel | 2720pF @ 25V | 60m Ω @ 50A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTMTS0D7N06CLTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d7n06cltxg-datasheets-9508.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 5W Ta 294.6W Tc | N-Channel | 16200pF @ 25V | 680μ Ω @ 50A, 10V | 2.5V @ 250μA | 62.2A Ta 477A Tc | 225nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ10N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80p-datasheets-2794.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTH74N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 74A | 150V | N-Channel | 74A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU02N50D | IXYS | $1.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty02n50dtrl-datasheets-8387.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 24 Weeks | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.1W | 1 | Not Qualified | R-PSIP-T3 | 4ns | 4 ns | 28 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 1.1W Ta 25W Tc | 0.2A | 0.8A | 500V | N-Channel | 120pF @ 25V | 30 Ω @ 50mA, 0V | 5V @ 25μA | 200mA Tc | Depletion Mode | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFA16N50P | IXYS | $4.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p-datasheets-3959.pdf | 500V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | No SVHC | 400mOhm | 3 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | THROUGH-HOLE | Single | 300W | 1 | FET General Purpose Power | 25ns | 22 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | TO-220AB | 40A | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 2.5mA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| NTMFS4C020NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-ntmfs4c020nt1g-datasheets-9519.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 3.2W Ta 134W Tc | N-Channel | 10144pF @ 15V | 0.7m Ω @ 30A, 10V | 2.2V @ 250μA | 47A Ta 303A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C01NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4c01nt1g-datasheets-9524.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | FET General Purpose Power | 303A | Single | 30V | 3.2W Ta 134W Tc | N-Channel | 10144pF @ 15V | 0.9m Ω @ 30A, 10V | 2.2V @ 250μA | 47A Ta 303A Tc | 139nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMTS0D4N04CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d4n04ctxg-datasheets-9527.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 5W Ta 244W Tc | N-Channel | 16500pF @ 20V | 450μ Ω @ 50A, 10V | 4V @ 250μA | 79.8A Ta 558A Tc | 251nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC302N15N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302n15n3x1sa1-datasheets-9447.pdf | Die | Lead Free | 18 Weeks | EAR99 | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 150V | 150V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 4V @ 270μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg22n50de3-datasheets-1811.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | 3 | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 312W | 1 | 21 ns | 42ns | 40 ns | 47 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 3V | 312W Tc | TO-247AC | 67A | N-Channel | 1938pF @ 100V | 230m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPW65R150CFDFKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-247-3 | 18 Weeks | 650V | 195.3W Tc | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK16G60W,RVQ | Toshiba Semiconductor and Storage | $2.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | Single | D2PAK | 1.35nF | 25ns | 5 ns | 100 ns | 15.8A | 30V | 600V | 130W Tc | 190mOhm | N-Channel | 1350pF @ 300V | 190mOhm @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 190 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB200N4F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp200n4f3-datasheets-9278.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | yes | EAR99 | GULL WING | NOT SPECIFIED | STB200N | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 180ns | 65 ns | 90 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 480A | 0.004Ohm | 862 mJ | 40V | N-Channel | 5100pF @ 25V | 4 V | 4m Ω @ 80A, 10V | 4V @ 250μA | 120A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFP14N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfp14n60p-datasheets-9452.pdf | 600V | 14A | TO-220-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 2.5mA | 14A Tc | 36nC @ 10V | 10V | ±30V |
