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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP56N15T | IXYS | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp56n15t-datasheets-9402.pdf | TO-220-3 | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 56A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | TO-220AB | 140A | 500 mJ | N-Channel | 2250pF @ 25V | 36m Ω @ 28A, 10V | 4.5V @ 250μA | 56A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| STW12NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf12nk60z-datasheets-3366.pdf | TO-247-3 | 3 | not_compliant | e3 | Tin (Sn) | STW12N | FET General Purpose Power | 10A | Single | 600V | 150W Tc | N-Channel | 1740pF @ 25V | 640m Ω @ 5A, 10V | 4.5V @ 100μA | 10A Tc | 59nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarVHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta3n100p-datasheets-9405.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 29 ns | 75 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 125W Tc | 3A | 6A | 200 mJ | 1kV | N-Channel | 1100pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| STD10NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 480mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | STD10 | 3 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 8ns | 20 ns | 50 ns | 9A | 25V | SILICON | SWITCHING | 3V | 90W Tc | TO-252AA | 9A | 650V | N-Channel | 850pF @ 50V | 480m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||
| IXTQ74N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 74A | 150V | N-Channel | 74A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD40N2LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu40n2lh5-datasheets-9345.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 11.8MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD40 | 3 | Single | 35W | 1 | FET General Purpose Power | R-PSSO-G2 | 4.8 ns | 13.6ns | 3.5 ns | 17.6 ns | 40A | 22V | SILICON | DRAIN | SWITCHING | 35W Tc | 160A | 110 mJ | 25V | N-Channel | 700pF @ 20V | 11.8m Ω @ 20A, 10V | 1V @ 250μA | 40A Tc | 6.3nC @ 5V | 5V 10V | ±22V | |||||||||||||||||||||||||||
| IXTY26P10T | IXYS | $1.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 150W | 1 | Other Transistors | R-PSSO-G2 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 150W Tc | 80A | 0.09Ohm | 300 mJ | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||
| FDB0170N607L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb0170n607l-datasheets-9367.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | 1.312g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 300A | 60V | 3.8W Ta 250W Tc | N-Channel | 19250pF @ 30V | 1.4m Ω @ 39A, 10V | 4V @ 250μA | 300A Tc | 243nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB70N10F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std70n10f4-datasheets-4630.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STB70N | 4 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 65A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 150W Tc | 260A | 0.0195Ohm | 120 mJ | N-Channel | 5800pF @ 25V | 19.5m Ω @ 30A, 10V | 4V @ 250μA | 65A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA10N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta10n60p-datasheets-9382.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 250μA | 10A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| STD70N2LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu70n2lh5-datasheets-9259.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 7.1MOhm | 3 | yes | EAR99 | No | GULL WING | STD70N | 3 | Single | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 48A | 22V | SILICON | DRAIN | SWITCHING | 60W Tc | 25V | N-Channel | 1300pF @ 25V | 7.1m Ω @ 24A, 10V | 1V @ 250μA | 48A Tc | 8nC @ 5V | 5V 10V | ±22V | ||||||||||||||||||||||||||||||||||||
| STU27N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std27n3lh5-datasheets-9995.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | SINGLE | 260 | STU27N | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 27A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30W Tc | 108A | 0.028Ohm | 50 mJ | N-Channel | 475pF @ 25V | 20m Ω @ 13.5A, 10V | 1V @ 250μA | 27A Tc | 4.6nC @ 5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||
| STI18NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti18nm60n-datasheets-9338.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | not_compliant | e3 | Matte Tin (Sn) - annealed | SINGLE | NOT SPECIFIED | STI18N | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 110W Tc | 52A | 0.285Ohm | N-Channel | 1000pF @ 50V | 285m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| STP200N6F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb200n6f3-datasheets-0987.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP200 | 3 | Single | 330W | 1 | FET General Purpose Power | R-PSFM-T3 | 26 ns | 75ns | 14 ns | 86 ns | 120A | 20V | SILICON | SWITCHING | 330W Tc | TO-220AB | 480A | 0.0038Ohm | 60V | N-Channel | 6800pF @ 25V | 3.9m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| STW22NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb22nm60n-datasheets-5956.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | SINGLE | STW22N | 3 | 125W | 1 | FET General Purpose Power | 11 ns | 38 ns | 74 ns | 16A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3V | 125W Tc | 64A | 0.22Ohm | N-Channel | 1330pF @ 50V | 220m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| STU95N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu95n3llh6-datasheets-2508.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | SINGLE | 260 | STU95 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 70W Tc | 0.0075Ohm | 150 mJ | N-Channel | 2200pF @ 25V | 4.7m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 20nC @ 4.5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||
| STD3NK60ZD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFREDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3nk60zd-datasheets-9342.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD3N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14ns | 14 ns | 19 ns | 2.4A | 30V | SILICON | SWITCHING | 45W Tc | 9.6A | 150 mJ | 600V | N-Channel | 311pF @ 25V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.4A Tc | 11.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STU40N2LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu40n2lh5-datasheets-9345.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | 260 | STU40 | 3 | 1 | FET General Purpose Power | 4.8 ns | 13.6ns | 3.5 ns | 17.6 ns | 40A | 22V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 35W Tc | 160A | 0.0161Ohm | 110 mJ | N-Channel | 700pF @ 20V | 12.4m Ω @ 20A, 10V | 1V @ 250μA | 40A Tc | 6.3nC @ 5V | 5V 10V | ±22V | |||||||||||||||||||||||||||||
| STP35N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw35n65m5-datasheets-9852.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 98MOhm | 3 | No | e3 | Matte Tin (Sn) | STP35N | 3 | Single | 160W | 1 | FET General Purpose Power | 60 ns | 12ns | 16 ns | 60 ns | 27A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 160W Tc | TO-220AB | 800 mJ | 650V | N-Channel | 3750pF @ 100V | 98m Ω @ 13.5A, 10V | 5V @ 250μA | 27A Tc | 83nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||
| STI200N6F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb200n6f3-datasheets-0987.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | STI200N | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 330W Tc | 480A | 918 mJ | N-Channel | 6265pF @ 25V | 3.8m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 101nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STK28N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stk28n3llh5-datasheets-9280.pdf | PolarPak® | 4 | 10 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | STK28 | 10 | Single | 5.2W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-N4 | 28A | 22V | SILICON | DRAIN | SWITCHING | 5.2W Tc | 112A | 0.0043Ohm | 30V | N-Channel | 2300pF @ 25V | 4.5m Ω @ 14A, 10V | 2.5V @ 250μA | 28A Tc | 19nC @ 4.5V | 4.5V 10V | ±22V | ||||||||||||||||||||||||||||||||||
| STL25N15F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl25n15f4-datasheets-9323.pdf | 8-PowerVDFN | Lead Free | 5 | 8 | yes | EAR99 | AVALANCE RATED | No | e3 | Matte Tin (Sn) - annealed | DUAL | STL25 | 8 | 1 | R-PDSO-N5 | 13.5 ns | 5.1ns | 11.4 ns | 39.7 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 80W Tc | 6A | 24A | 0.063Ohm | 125 mJ | N-Channel | 2710pF @ 25V | 63m Ω @ 3A, 10V | 4V @ 250μA | 25A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| STF40NF03L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp40nf03l-datasheets-7588.pdf | TO-220-3 Full Pack | 3 | 3 | EAR99 | LOW THRESHOLD | not_compliant | e3 | Matte Tin (Sn) - annealed | NOT SPECIFIED | STF40N | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 80ns | 16 ns | 25 ns | 23A | 16V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 92A | 250 mJ | 30V | N-Channel | 770pF @ 25V | 22m Ω @ 20A, 10V | 2.5V @ 250μA | 23A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
| STF30NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw30nm50n-datasheets-9882.pdf | TO-220-3 Full Pack | 3 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | NOT SPECIFIED | STF30N | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 20ns | 60 ns | 115 ns | 27A | 25V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 900 mJ | 500V | N-Channel | 2740pF @ 50V | 115m Ω @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 94nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| STI30NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw30nm60n-datasheets-0310.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | unknown | SINGLE | NOT SPECIFIED | STI30N | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 190W Tc | 100A | 900 mJ | N-Channel | 2700pF @ 50V | 130m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 91nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP30NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw30nm50n-datasheets-9882.pdf | TO-220-3 | Lead Free | 3 | 115mOhm | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STP30N | 3 | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 20ns | 60 ns | 115 ns | 27A | 25V | SILICON | ISOLATED | SWITCHING | 190W Tc | TO-220AB | 900 mJ | 500V | N-Channel | 2740pF @ 50V | 115m Ω @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 94nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||
| STS30N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts30n3llh6-datasheets-9292.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS30 | 8 | 30 | 2.7W | 1 | FET General Purpose Power | Not Qualified | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.7W Tc | 0.0035Ohm | 525 mJ | N-Channel | 4040pF @ 25V | 2.4m Ω @ 15A, 10V | 1V @ 250μA | 30A Tc | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| STP95N2LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std95n2lh5-datasheets-6479.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | STP95 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 80W Tc | TO-220AB | 95A | 0.007Ohm | 165 mJ | N-Channel | 1817pF @ 25V | 4.9m Ω @ 40A, 10V | 1V @ 250μA | 80A Tc | 13.4nC @ 5V | 5V 10V | ±22V | |||||||||||||||||||||||||||||||
| STT5PF20V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stt5pf20v-datasheets-9307.pdf | SOT-23-6 | 3.05mm | 1.3mm | 1.75mm | Lead Free | 6 | 80MOhm | 6 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | STT5P | 6 | 30 | 1.6W | 1 | Other Transistors | Not Qualified | 11 ns | 47ns | 47 ns | 38 ns | 2.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.6W Tc | 5A | 20V | P-Channel | 412pF @ 15V | 80m Ω @ 2.5A, 4.5V | 450mV @ 250μA | 5A Tc | 4.5nC @ 2.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||
| STU60N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp60n3lh5-datasheets-5578.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | 3 | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STU60N | 3 | Single | 60W | 1 | FET General Purpose Power | 6 ns | 33ns | 4.2 ns | 19 ns | 24A | 22V | SILICON | DRAIN | SWITCHING | 1.8V | 60W Tc | 48A | 30V | N-Channel | 1620pF @ 25V | 8.4m Ω @ 24A, 10V | 3V @ 250μA | 48A Tc | 8.8nC @ 5V | 5V 10V | ±20V |
