Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFPC50LCPBF | Vishay Siliconix | $3.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpc50lcpbf-datasheets-0208.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 8 Weeks | 38.000013g | 600mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.3nF | 17 ns | 32ns | 26 ns | 41 ns | 11A | 30V | 600V | 190W Tc | 600mOhm | N-Channel | 2300pF @ 25V | 600mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 84nC @ 10V | 600 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FDP2D3N10C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdpf2d3n10c-datasheets-0049.pdf | TO-220-3 | 20 Weeks | 1.8g | ACTIVE (Last Updated: 2 days ago) | yes | Single | 100V | 214W Tc | N-Channel | 11180pF @ 50V | 2.3m Ω @ 100A, 10V | 4V @ 700μA | 222A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LC | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840lcpbf-datasheets-8729.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 13 Weeks | 6.000006g | 3 | 1 | Single | TO-220AB | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 125W Tc | 650mOhm | 500V | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHB24N65ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb24n65ege3-datasheets-2054.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | 650V | 250W Tc | N-Channel | 2740pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R070CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r070cfd7atma1-datasheets-0180.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 156W Tc | N-Channel | 2721pF @ 400V | 70m Ω @ 15.1A, 10V | 4.5V @ 760μA | 31A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS3034-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirls30347trl-datasheets-0181.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 10.67mm | 4.83mm | 9.65mm | 6 | 16 Weeks | No SVHC | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 71 ns | 590ns | 200 ns | 94 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 380W Tc | TO-263CB | 380A | 250 mJ | 40V | N-Channel | 10990pF @ 40V | 1.4m Ω @ 200A, 10V | 2.5V @ 250μA | 240A Tc | 180nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTH44N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | Single | 44A | 300V | N-Channel | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB0690N1507L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb0690n1507l-datasheets-0135.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | 1.312g | ACTIVE (Last Updated: 3 weeks ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 150V | 250W Tc | N-Channel | 8775pF @ 75V | 6.9m Ω @ 17A, 10V | 4V @ 250μA | 3.8A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH62N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 62A | 250V | N-Channel | 62A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS08N2D5C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-ntmfs08n2d5c-datasheets-0140.pdf | 8-PowerTDFN | 20 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 138W Tc | N-Channel | 6240pF @ 40V | 2.7m Ω @ 68A, 10V | 4V @ 380μA | 166A Tc | 84nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ8N85X | IXYS | $5.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-3P-3, SC-65-3 | 19 Weeks | compliant | 850V | 200W Tc | N-Channel | 654pF @ 25V | 850m Ω @ 4A, 10V | 5.5V @ 250μA | 8A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH3N100P | IXYS | $5.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarVHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta3n100p-datasheets-9405.pdf | TO-247-3 | 3 | 28 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 29 ns | 75 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 125W Tc | TO-247AD | 3A | 6A | 200 mJ | 1kV | N-Channel | 1100pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFP5N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100p-datasheets-0151.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 250W | 1 | FET General Purpose Power | R-PSFM-T3 | 5A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 250W Tc | TO-220AB | 5A | 300 mJ | 1kV | N-Channel | 1830pF @ 25V | 2.8 Ω @ 500mA, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHG24N65E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg24n65ege3-datasheets-9723.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 19 Weeks | 38.000013g | Unknown | 145mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIPC44N50C3X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FKP250A | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/sanken-fkp250a-datasheets-0157.pdf | TO-3P-3 Full Pack | -3pF | Lead Free | 3 | 36 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 50A | SILICON | SINGLE | 250V | 250V | 85W Tc | 200A | 0.043Ohm | 400 mJ | N-Channel | 3800pF @ 25V | 43m Ω @ 25A, 10V | 4.5V @ 1mA | 50A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPC302N25N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302n25n3x1sa1-datasheets-0160.pdf | Die | 18 Weeks | EAR99 | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 250V | 250V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 4V @ 270μA | 1A Tj | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120-TRR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 200W Tc | N-Channel | 1350pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA5N100P | IXYS | $7.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100p-datasheets-0151.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 250W Tc | 5A | 10A | 300 mJ | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFS4228PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineontechnologies-irfs4228pbf-datasheets-0110.pdf | 150V | 83A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | Single | 330W | 1 | D2PAK | 4.53nF | 18 ns | 24 ns | 83A | 30V | 150V | 330W Tc | 15mOhm | 150V | N-Channel | 4530pF @ 25V | 15mOhm @ 33A, 10V | 5V @ 250μA | 83A Tc | 107nC @ 10V | 15 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL60SL216 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl60s216-datasheets-7498.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 195A | 60V | 375W Tc | N-Channel | 15330pF @ 25V | 1.95m Ω @ 100A, 10V | 2.4V @ 250μA | 195A Tc | 255nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB33N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb33n60ege3-datasheets-1747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | TO-263 (D2Pak) | 600V | 278W Tc | N-Channel | 3508pF @ 100V | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF36N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf36n60nt-datasheets-2920.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 12 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 1 | FET General Purpose Power | 23 ns | 22ns | 4 ns | 94 ns | 36A | 30V | SILICON | ISOLATED | SWITCHING | TO-220AB | 0.09Ohm | 600V | N-Channel | 4785pF @ 100V | 90m Ω @ 18A, 10V | 4V @ 250μA | 36A Tc | 112nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTH72N20T | IXYS | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 72A | 200V | N-Channel | 72A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA20N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spp20n65c3xksa1-datasheets-5034.pdf | 650V | 20.7A | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 34.5W | 1 | Not Qualified | 10 ns | 5ns | 4.5 ns | 67 ns | 20.7A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34.5W Tc | TO-220AB | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFA44N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 250V | 240W Tc | N-Channel | 2200pF @ 25V | 40m Ω @ 22A, 10V | 4.5V @ 1mA | 44A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6025FNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-3P-3 Full Pack | Lead Free | 3 | 10 Weeks | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 150W Tc | 100A | 0.18Ohm | 42.1 mJ | N-Channel | 3500pF @ 25V | 180m Ω @ 12.5A, 10V | 5V @ 1mA | 25A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA50N20X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 200V | 240W Tc | N-Channel | 2100pF @ 25V | 30m Ω @ 25A, 10V | 4.5V @ 1mA | 50A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ90N15T | IXYS | $7.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtq90n15t-datasheets-0103.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | Not Qualified | 22ns | 19 ns | 44 ns | 90A | 30V | SILICON | DRAIN | SWITCHING | 455W Tc | 250A | 0.02Ohm | 0.75 mJ | 150V | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFQ12N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfq12n80p-datasheets-0104.pdf | TO-3P-3, SC-65-3 | 3 | 14 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 26ns | 25 ns | 70 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V |
