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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXKP20N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5-datasheets-0375.pdf | TO-220-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | Not Qualified | 5ns | 5 ns | 50 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 0.2Ohm | 600V | N-Channel | 1520pF @ 100V | 200m Ω @ 10A, 10V | 3.5V @ 1.1mA | 20A Tc | 45nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPI200N25N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipi200n25n3gaksa1-datasheets-0344.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 18 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 18 ns | 20ns | 12 ns | 45 ns | 64A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 256A | 0.02Ohm | N-Channel | 7100pF @ 100V | 20m Ω @ 64A, 10V | 4V @ 270μA | 64A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTH16P20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixth16p20-datasheets-0348.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | 26ns | 25 ns | 65 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | TO-247AD | 64A | 0.16Ohm | -200V | P-Channel | 2800pF @ 25V | 160m Ω @ 500mA, 10V | 5V @ 250μA | 16A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFA3N120-TRR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1200V | 200W Tc | N-Channel | 1050pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R065C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 2A (4 Weeks) | 150°C | -40°C | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl60r065c7auma1-datasheets-0349.pdf | Contains Lead | 4 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 600V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 29A | 135A | 56mOhm | 159 mJ | |||||||||||||||||||||||||||||||||||||||||||||||
| R6020ANJTL | ROHM Semiconductor | $10.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | R-PSSO-G2 | 40 ns | 60ns | 70 ns | 230 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100W Tc | 80A | 0.25Ohm | 26.7 mJ | 600V | N-Channel | 2040pF @ 25V | 250m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTQ54N30T | IXYS | $18.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | TO-3P | 54A | 300V | N-Channel | 54A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH340N04T4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtp340n04t4-datasheets-9887.pdf | TO-247-3 | 17 Weeks | yes | 340A | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.9m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishay-sihg33n60efge3-datasheets-3046.pdf | TO-247-3 | 3 | 14 Weeks | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 4V | 278W Tc | TO-247AC | 0.098Ohm | 600V | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTH76N25T | IXYS | $5.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta76n25t-datasheets-0048.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 460W | 1 | FET General Purpose Power | R-PSFM-T3 | 25ns | 29 ns | 56 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | TO-247AD | 0.039Ohm | 250V | N-Channel | 4500pF @ 25V | 39m Ω @ 500mA, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTP50N20PM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp50n20pm-datasheets-0362.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 90W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 35ns | 30 ns | 70 ns | 20A | 20V | SILICON | SWITCHING | 90W Tc | TO-220AB | 0.06Ohm | 1000 mJ | 200V | N-Channel | 2720pF @ 25V | 60m Ω @ 25A, 10V | 5V @ 250μA | 20A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIHG33N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg33n60ege3-datasheets-9756.pdf | TO-247-3 | 17 Weeks | 38.000013g | 1 | TO-247AC | 33A | 600V | 278W Tc | 99mOhm | N-Channel | 3508pF @ 100V | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP102N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfa102n15t-datasheets-0109.pdf | TO-220-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 102A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 455W Tc | TO-220AB | 300A | 0.018Ohm | 750 mJ | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| R6030ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-3P-3 Full Pack | Lead Free | 3 | 10 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 120W Tc | 80A | N-Channel | 2100pF @ 25V | 130m Ω @ 14.5A, 10V | 4V @ 1mA | 30A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SCT10N120H | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~200°C TJ | Tape & Reel (TR) | SiCFET (Silicon Carbide) | TO-247-3 | 1200V | 150W Tc | N-Channel | 290pF @ 400V | 690m Ω @ 6A, 20V | 3.5V @ 250μA | 12A Tc | 22nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI110N20N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi110n20n3gaksa1-datasheets-0299.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 18 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSIP-T3 | 18 ns | 26ns | 11 ns | 41 ns | 88A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 352A | 560 mJ | N-Channel | 7100pF @ 100V | 11m Ω @ 88A, 10V | 4V @ 270μA | 88A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA32P20T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 200V | 300W Tc | P-Channel | 14500pF @ 25V | 130m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 185nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH20N65X2 | IXYS | $6.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 15 Weeks | compliant | 650V | 290W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC46N60C3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ76N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixta76n25t-datasheets-0048.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | FET General Purpose Power | Not Qualified | 25ns | 29 ns | 56 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 170A | 1500 mJ | 250V | N-Channel | 4500pF @ 25V | 39m Ω @ 500mA, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFP20N50P3 | IXYS | $4.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-220-3 | 3 | 8 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 380W Tc | TO-220AB | 20A | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 8A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTQ86N20T | IXYS | $12.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp86n20t-datasheets-0035.pdf | TO-3P-3, SC-65-3 | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 86A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 480W Tc | 260A | 0.029Ohm | 1000 mJ | N-Channel | 4500pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFP4N100PM | IXYS | $4.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | TO-220-3 Full Pack, Isolated Tab | 3 | 26 Weeks | AVALANCHE RATED | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1000V | 1000V | 40W Tc | TO-220AB | 2.5A | 8A | 200 mJ | N-Channel | 1456pF @ 25V | 3.3 Ω @ 2A, 10V | 6V @ 250μA | 2.1A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPW20N60CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw20n60cfdfksa1-datasheets-0313.pdf | 650V | 20.7A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | e3 | Tin (Sn) | SINGLE | 3 | 35W | 1 | 12 ns | 15ns | 6.4 ns | 59 ns | 20.7A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 208W Tc | 52A | 0.22Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 220m Ω @ 13.1A, 10V | 5V @ 1mA | 20.7A Tc | 124nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH18N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA24N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH460P2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtq460p2-datasheets-2745.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 480W | 1 | FET General Purpose Power | R-PSFM-T3 | 24A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 480W Tc | 50A | 0.27Ohm | 750 mJ | N-Channel | 2890pF @ 25V | 270m Ω @ 12A, 10V | 4.5V @ 250μA | 24A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FDB0260N1007L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb0260n1007l-datasheets-0303.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | 1.312g | No SVHC | 7 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 200A | 100V | 2.8V | 3.8W Ta 250W Tc | N-Channel | 8545pF @ 50V | 2.6m Ω @ 27A, 10V | 4V @ 250μA | 200A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60AEL-GE3 | Vishay Siliconix | $3.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EL | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siha22n60aelge3-datasheets-0332.pdf | TO-220-3 Full Pack | TO-220 Full Pack | 600V | 35W Tc | N-Channel | 1757pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMPH6050SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph6050sfgq7-datasheets-0254.pdf | 23 Weeks |
