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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT5012JN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Chassis Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5012jn-datasheets-3099.pdf | SOT-227-4, miniBLOC | compliant | 4 | 1 | FET General Purpose Power | 500V | 520W Tc | 43A | N-Channel | 6500pF @ 25V | 120m Ω @ 21.5A, 10V | 4V @ 2.5mA | 43A Tc | 370nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2610_002 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-252-3, DPak (2 Leads + Tab), SC-63 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT8018JN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Chassis Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8018jn-datasheets-3103.pdf | SOT-227-4, miniBLOC | 4 | UL RECOGNIZED | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 690W Tc | 40A | 160A | 0.18Ohm | 690 pF | N-Channel | 14000pF @ 25V | 130ns | 80ns | 180m Ω @ 20A, 10V | 4V @ 5mA | 40A Tc | 700nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT10M07JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m07jvr-datasheets-3105.pdf | SOT-227-4, miniBLOC | 4 | 4 | 1 | FET General Purpose Power | 100V | 700W Tc | 225A | N-Channel | 21600pF @ 25V | 4V @ 5mA | 225A Tc | 1050nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT11C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | TO-220-3 | compliant | NO | FET General Purpose Power | Single | 600V | 278W Tc | 11A | N-Channel | 2000pF @ 100V | 440m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R037P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-4 | 12 Weeks | yes | EAR99 | compliant | 650V | 255W Tc | N-Channel | 5243pF @ 400V | 37m Ω @ 29.5A, 10V | 4V @ 1.48mA | 76A Tc | 121nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6244_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF11C60_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 600V | 50W Tc | N-Channel | 2000pF @ 100V | 440m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT6030BN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5025bn-datasheets-3067.pdf | TO-247-3 | 3 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 360W Tc | TO-247AD | 23A | 92A | 0.3Ohm | 285 pF | N-Channel | 3500pF @ 25V | 230ns | 110ns | 300m Ω @ 11.5A, 10V | 4V @ 1mA | 23A Tc | 210nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT58MJ50J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt58mj50j-datasheets-3115.pdf | SOT-227-4, miniBLOC | 500V | 540W Tc | N-Channel | 13500pF @ 25V | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 58A Tc | 340nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1002RBNG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-247-3 | 3 | yes | EAR99 | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1000V | 1000V | 240W Tc | TO-247AD | 7A | 28A | 2Ohm | N-Channel | 1800pF @ 25V | 1.6 Ω @ 4A, 10V | 4V @ 1mA | 8A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPS090N03LGBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-251-3 Stub Leads, IPak | 30V | 42W Tc | N-Channel | 1600pF @ 15V | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 40A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD254_004 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2962(T6CANO,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2962fj-datasheets-2892.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN24N100F | IXYS | $129.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfn24n100f-datasheets-3060.pdf | SOT-227-4, miniBLOC | 10 Weeks | No SVHC | 4 | 600W | SOT-227B | 18ns | 11 ns | 52 ns | 24A | 20V | 1000V | 600W Tc | 390mOhm | 1kV | N-Channel | 6600pF @ 25V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFK24N100F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfk24n100f-datasheets-3062.pdf | TO-264-3, TO-264AA | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 18ns | 11 ns | 52 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 560W Tc | 96A | 1kV | N-Channel | 6600pF @ 25V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI8469DB-T2-E1 | Vishay Siliconix | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8469dbt2e1-datasheets-2815.pdf | 4-UFBGA | Lead Free | 4 | 15 Weeks | 64mOhm | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | 780mW | 1 | Other Transistors | 15 ns | 22ns | 17 ns | 35 ns | 3.6A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 8V | 8V | 780mW Ta 1.8W Tc | P-Channel | 900pF @ 4V | 64m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 4.6A Ta | 17nC @ 4.5V | 4.5V | ±5V | ||||||||||||||||||||||||||||||||
| APT5025BN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5025bn-datasheets-3067.pdf | TO-247-3 | 3 | 3 | NO | SINGLE | 3 | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 500V | 500V | 310W Tc | TO-247AD | 92A | 0.25Ohm | N-Channel | 2950pF @ 25V | 250m Ω @ 11.5A, 10V | 4V @ 1mA | 23A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPU60R3K4CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 150°C | -40°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r3k4ceauma1-datasheets-6854.pdf | Contains Lead | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 600V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-251AA | 3.9A | 3.4Ohm | 6 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK21N100F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfx21n100f-datasheets-3032.pdf | TO-264-3, TO-264AA | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 16ns | 15 ns | 55 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 500W Tc | 84A | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 5500pF @ 25V | 500m Ω @ 10.5A, 10V | 5.5V @ 4mA | 21A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| APT1001RBN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1001rbn-datasheets-3074.pdf | TO-247-3 | 3 | no | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 310W | 1 | R-PSFM-T3 | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1000V | 310W Tc | TO-247AD | 44A | 1Ohm | N-Channel | 2950pF @ 25V | 1 Ω @ 5.5A, 10V | 4V @ 1mA | 11A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| APT40M75JN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Chassis Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40m75jn-datasheets-3076.pdf | SOT-227-4, miniBLOC | 4 | UL RECOGNIZED | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 520W Tc | 56A | 224A | 0.075Ohm | 720 pF | N-Channel | 6800pF @ 25V | 96ns | 94ns | 75m Ω @ 28A, 10V | 4V @ 2.5mA | 56A Tc | 370nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT40M42JN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Chassis Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40m42jn-datasheets-3078.pdf | SOT-227-4, miniBLOC | 4 | UL RECOGNIZED | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 690W Tc | 86A | 344A | 0.042Ohm | 1440 pF | N-Channel | 14000pF @ 25V | 125ns | 120ns | 42m Ω @ 43A, 10V | 4V @ 5mA | 86A Tc | 760nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT4012BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt4012bvrg-datasheets-3080.pdf | TO-247-3 | 400V | 370W Tc | N-Channel | 5400pF @ 25V | 120m Ω @ 18.5A, 10V | 4V @ 1mA | 37A Tc | 290nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT6040BNG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6040bng-datasheets-3082.pdf | TO-247-3 | 3 | YES | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSFM-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 310W Tc | 18A | 72A | 0.4Ohm | 230 pF | N-Channel | 2950pF @ 25V | 141ns | 74ns | 400m Ω @ 9A, 10V | 4V @ 1mA | 18A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFK44N50F | IXYS-RF | $55.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixysrf-ixfk44n50f-datasheets-3051.pdf | TO-264-3, TO-264AA | 3 | No SVHC | 3 | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 18ns | 8 ns | 53 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 184A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 5500pF @ 25V | 120m Ω @ 22A, 10V | 5.5V @ 4mA | 44A Tc | 156nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| AON7450L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW410 | Alpha & Omega Semiconductor Inc. | $246.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aow410-datasheets-3022.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | NO | 175°C | FET General Purpose Power | Single | N-CHANNEL | 333W | METAL-OXIDE SEMICONDUCTOR | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ438,Q(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj438mdkqm-datasheets-2869.pdf | TO-220-3 Full Pack | TO-220NIS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A16GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-223 | 60V | P-Channel |
