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ContactAPT1001RBN
MOSFET (Metal Oxide) N-Channel Tube 1 Ω @ 5.5A, 10V ±30V 2950pF @ 25V 130nC @ 10V 1000V TO-247-3
- Manufacturer: Microsemi Corporation
- NO: 523-APT1001RBN
- Package: TO-247-3
- Datasheet:
- Stock: 11126
- Description: MOSFET (Metal Oxide) N-Channel Tube 1 Ω @ 5.5A, 10V ±30V 2950pF @ 25V 130nC @ 10V 1000V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 1Ohm |
| Pulsed Drain Current-Max (IDM) | 44A |
| RoHS Status | Non-RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | POWER MOS IV® |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 310W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 310W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1 Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 11A |
| JEDEC-95 Code | TO-247AD |
