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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Weight | Resistance | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP80N06S405AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-ipp80n06s405aksa2-datasheets-3147.pdf | TO-220-3 | 3 | 6.000006g | yes | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSFM-T3 | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 80A | 320A | 0.0057Ohm | |||||||||||||||||||||||||||||||||
| SPD02N50C3BTMA1 | Infineon Technologies | $1.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd02n50c3btma1-datasheets-3151.pdf | 2 | 52 Weeks | no | AVALANCHE RATED | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 1.8A | 5.4A | 3Ohm | 50 mJ | ||||||||||||||||||||||||||||||
| AOW10T60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aow10t60-datasheets-3155.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | compliant | NO | FET General Purpose Power | Single | 600V | 208W Tc | 10A | N-Channel | 1346pF @ 100V | 700m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| NVMFS5C442NAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c442nwfaft1g-datasheets-0869.pdf | 8-PowerTDFN, 5 Leads | 40V | 3.7W Ta 83W Tc | N-Channel | 2100pF @ 25V | 2.3m Ω @ 50A, 10V | 4V @ 250μA | 29A Ta 140A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIPC30N60CFDX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD6416ANLT4G-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100V | 71W Tc | N-Channel | 1000pF @ 25V | 74m Ω @ 10A, 10V | 2.2V @ 250μA | 19A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4010DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4010dyt1ge3-datasheets-3123.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 3.4mOhm | 8-SO | 30V | 6W Tc | N-Channel | 3595pF @ 15V | 3.4mOhm @ 15A, 10V | 2.3V @ 250μA | 31.3A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||
| PMF63UNEAX | Nexperia USA Inc. | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmf63uneax-datasheets-3163.pdf | SC-70, SOT-323 | 3 | 20V | 395mW Ta | N-Channel | 289pF @ 10V | 65m Ω @ 2A, 4.5V | 1V @ 250μA | 2A Ta | 5.85nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SIPC26N60CFDX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF10T60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aow10t60-datasheets-3155.pdf | TO-262-3 Full Pack, I2Pak | compliant | NO | FET General Purpose Power | Single | 600V | 28W Tc | 10A | N-Channel | 1346pF @ 100V | 700m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| AOD4182_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C09NBT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 38 Weeks | 30V | 760mW Ta | N-Channel | 1252pF @ 15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5020BNFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-3 | TO-247AD | 500V | 360W Tc | N-Channel | 3500pF @ 25V | 200mOhm @ 14A, 10V | 4V @ 1mA | 28A Tc | 210nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| APT5022BNG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5020bn-datasheets-3095.pdf | TO-247-3 | 3 | 21 Weeks | unknown | YES | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSFM-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 500V | 500V | 360W Tc | 27A | 108A | 0.22Ohm | 350 pF | N-Channel | 3500pF @ 25V | 237ns | 124ns | 220m Ω @ 13.5A, 10V | 4V @ 1mA | 27A Tc | 210nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IPS050N03LGBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-251-3 Stub Leads, IPak | 30V | 68W Tc | N-Channel | 3200pF @ 15V | 5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 31nC @ 10V | 4.5V 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| AO4264_DELTA | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-ao4264delta-datasheets-3170.pdf | 8-SOIC (0.154, 3.90mm Width) | 60V | 3.1W Ta | N-Channel | 2007pF @ 30V | 11m Ω @ 12A, 10V | 2.5V @ 250μA | 12A Ta | 20nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPH3206LDB | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | 2017 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206lsb-datasheets-2033.pdf | 4-PowerDFN | 650V | 81W Tc | N-Channel | 720pF @ 480V | 180m Ω @ 10A, 8V | 2.6V @ 500μA | 16A Tc | 6.2nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||
| AO4442L | Alpha & Omega Semiconductor Inc. | $8.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-SOIC (0.154, 3.90mm Width) | compliant | 75V | 3.1W Ta | N-Channel | 350pF @ 37.5V | 130m Ω @ 3.1A, 10V | 3V @ 250μA | 3.1A Ta | 3.5nC @ 4.5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| AOD4185L_003 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 40V | 62.5W Tc | P-Channel | 2550pF @ 20V | 15m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 18.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOD4T60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod4t60-datasheets-3142.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | compliant | YES | FET General Purpose Power | Single | 600V | 83W Tc | 4A | N-Channel | 460pF @ 100V | 2.1 Ω @ 1A, 10V | 5V @ 250μA | 4A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| AOT11C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | TO-220-3 | compliant | NO | FET General Purpose Power | Single | 600V | 278W Tc | 11A | N-Channel | 2000pF @ 100V | 440m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPZ60R037P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-4 | 12 Weeks | yes | EAR99 | compliant | 650V | 255W Tc | N-Channel | 5243pF @ 400V | 37m Ω @ 29.5A, 10V | 4V @ 1.48mA | 76A Tc | 121nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AON6244_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF11C60_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 600V | 50W Tc | N-Channel | 2000pF @ 100V | 440m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT6030BN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5025bn-datasheets-3067.pdf | TO-247-3 | 3 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 360W Tc | TO-247AD | 23A | 92A | 0.3Ohm | 285 pF | N-Channel | 3500pF @ 25V | 230ns | 110ns | 300m Ω @ 11.5A, 10V | 4V @ 1mA | 23A Tc | 210nC @ 10V | 10V | ±30V | ||||||||||||||||||||
| APT58MJ50J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt58mj50j-datasheets-3115.pdf | SOT-227-4, miniBLOC | 500V | 540W Tc | N-Channel | 13500pF @ 25V | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 58A Tc | 340nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APT6040BN | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS IV® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6040bng-datasheets-3082.pdf | TO-247-3 | 3 | no | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 310W Tc | TO-247AD | 18A | 72A | 0.4Ohm | N-Channel | 2950pF @ 25V | 400m Ω @ 9A, 10V | 4V @ 1mA | 18A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| AOT10T60P | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 | 600V | 208W Tc | N-Channel | 1595pF @ 100V | 700m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2989,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2989fj-datasheets-2887.pdf | TO-226-3, TO-92-3 Long Body | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF20C60P_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 600V | 50W Tc | N-Channel | 3607pF @ 100V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 80nC @ 10V | 10V | ±30V |
