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ContactAPT6030BN
MOSFET (Metal Oxide) N-Channel Tube 300m Ω @ 11.5A, 10V ±30V 3500pF @ 25V 210nC @ 10V 600V TO-247-3
- Manufacturer: Microsemi Corporation
- NO: 523-APT6030BN
- Package: TO-247-3
- Datasheet:
- Stock: 11135
- Description: MOSFET (Metal Oxide) N-Channel Tube 300m Ω @ 11.5A, 10V ±30V 3500pF @ 25V 210nC @ 10V 600V TO-247-3 (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| JEDEC-95 Code | TO-247AD |
| Drain Current-Max (Abs) (ID) | 23A |
| Drain-source On Resistance-Max | 0.3Ohm |
| Pulsed Drain Current-Max (IDM) | 92A |
| DS Breakdown Voltage-Min | 600V |
| Feedback Cap-Max (Crss) | 285 pF |
| Turn Off Time-Max (toff) | 230ns |
| Turn On Time-Max (ton) | 110ns |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | POWER MOS IV® |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 360W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 11.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 23A Tc |
