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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IRG4BC20WPBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-irgb4064dpbf-datasheets-0296.pdf | TO-220-3 | TO-220AB | 60W | 600V | 13A | 480V, 6.5A, 50Ohm, 15V | 2.6V @ 15V, 6.5A | 26nC | 52A | 22ns/110ns | 60μJ (on), 80μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60F4DPQ-A0#T0 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 3 (168 Hours) | Standard | Non-RoHS Compliant | TO-247-3 | TO-247A | 235.8W | 90ns | 600V | 60A | 400V, 30A, 5Ohm, 15V | 1.82V @ 15V, 30A | Trench | 45ns/85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH48N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixga48n60c3-datasheets-2037.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | yes | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | IXG*48N60 | 3 | Single | 300W | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 1.96nF | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 2.3V | 45 ns | 600V | 75A | 187 ns | 400V, 30A, 3 Ω, 15V | 20V | 5.5V | 2.5V @ 15V, 30A | PT | 77nC | 250A | 19ns/60ns | 410μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||
| NGTB20N120IHLWG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-ngtb20n120ihlwg-datasheets-3066.pdf | TO-247-3 | TO-247 | 192W | 1.2V | 40A | 600V, 20A, 10Ohm, 15V | 2.2V @ 15V, 20A | 200nC | 200A | -/235ns | 700μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PH20KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 1998 | /files/infineontechnologies-irg4ph20kdpbf-datasheets-3041.pdf | 1.2kV | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 60W | Single | 60W | 1 | Insulated Gate BIP Transistors | 30ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AC | 51 ns | 1.2kV | 3.17V | 80 ns | 4.3V | 11A | 1200V | 730 ns | 800V, 5A, 50 Ω, 15V | 20V | 6.5V | 4.3V @ 15V, 5A | 28nC | 22A | 50ns/100ns | 620μJ (on), 300μJ (off) | |||||||||||||||||||||||||||||||||||
| FGA90N30TU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-fga90n30tu-datasheets-3067.pdf | TO-3P-3, SC-65-3 | 3 | yes | LOW CONDUCTION LOSS | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 2 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | MOTOR CONTROL | N-CHANNEL | 219W | 240 ns | 300V | 90A | 310 ns | 1.4V @ 15V, 20A | 87nC | 220A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGS4715DPBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-irgb4715dpbf-datasheets-0085.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100W | 86ns | 650V | 21A | 400V, 8A, 50Ohm, 15V | 2V @ 15V, 8A | 30nC | 24A | 30ns/100ns | 200μJ (on), 90μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRGR4045D | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-auirgr4045d-datasheets-3068.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 77W | 74ns | 600V | 12A | 400V, 6A, 47Ohm, 15V | 2V @ 15V, 6A | Trench | 19.5nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGR15N40LTM | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-sgr15n40ltf-datasheets-1797.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | GENERAL PURPOSE SWITCHING | N-CHANNEL | 45W | 1480 ns | 400V | 1200 ns | 8V @ 4.5V, 130A | Trench | 130A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGB4059DPBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-irgb4059dpbf-datasheets-3069.pdf | TO-220-3 | TO-220AB | 56W | 55ns | 600V | 8A | 400V, 4A, 100Ohm, 15V | 2.05V @ 15V, 4A | Trench | 9nC | 16A | 25ns/65ns | 35μJ (on), 75μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB30N120L2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-ngtb30n120l2wg-datasheets-2976.pdf | TO-247 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 26 Weeks | 6.500007g | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | 534W | NOT SPECIFIED | Single | NOT SPECIFIED | 450 ns | 1.2kV | 1.7V | 1.2kV | 60A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/ixys-ixgn200n170-datasheets-2982.pdf | SOT-227-4, miniBLOC | 17 Weeks | 1250W | 133ns | 1700V | 280A | 850V, 100A, 1 Ω, 15V | 2.6V @ 15V, 100A | 540nC | 1050A | 37ns/320ns | 28mJ (on), 30mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60D7DPQ-E0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d7dpqe0t2-datasheets-2984.pdf | TO-247-3 | Lead Free | 16 Weeks | 3 | EAR99 | 300W | NOT SPECIFIED | RJH60D | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 300W | 100 ns | 600V | 2.2V | 90A | 300V, 50A, 5 Ω, 15V | 2.2V @ 15V, 50A | Trench | 130nC | 60ns/190ns | 1.1mJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG7PH46UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/infineontechnologies-irg7ph46udpbf-datasheets-2990.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 390W | Single | 390W | 1 | Insulated Gate BIP Transistors | 45 ns | 410 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 140 ns | 1.2kV | 1.7V | 80 ns | 2V | 40A | 60ns | 1200V | 680 ns | 600V, 40A, 10 Ω, 15V | 6V | 2V @ 15V, 40A | Trench | 220nC | 160A | 45ns/410ns | 2.61mJ (on), 1.85mJ (off) | 60ns | |||||||||||||||||||||||||||||||||||
| IRG4PH30KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4ph30kdpbf-datasheets-2998.pdf | 1.2kV | 20A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 39 ns | 79ns | 220 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AC | 50 ns | 1.2kV | 3.1V | 121 ns | 4.2V | 20A | 1200V | 637 ns | 800V, 10A, 23 Ω, 15V | 20V | 6V | 4.2V @ 15V, 10A | 53nC | 40A | 39ns/220ns | 950μJ (on), 1.15mJ (off) | 140ns | ||||||||||||||||||||||||||||||||
| APT40GP90BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt40gp90bg-datasheets-3009.pdf | 900V | 100A | TO-247-3 | Lead Free | 3 | NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 1 month ago) | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 543W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 900V | 43 ns | 900V | 100A | 215 ns | 600V, 40A, 5 Ω, 15V | 3.9V @ 15V, 40A | PT | 145nC | 160A | 16ns/75ns | 825μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| STGF19NC60HD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw19nc60hd-datasheets-4405.pdf | 600V | 9A | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 32W | STGF19 | 3 | Single | 35W | 1 | Insulated Gate BIP Transistors | 25 ns | 7ns | 97 ns | 16A | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | TO-220AB | 31 ns | 600V | 1.8V | 32 ns | 600V | 16A | 272 ns | 390V, 12A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 12A | 53nC | 60A | 25ns/97ns | 85μJ (on), 189μJ (off) | |||||||||||||||||||||||||||||
| NGTB50N120FL2WAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtb50n120fl2wag-datasheets-3014.pdf | Lead Free | 17 Weeks | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX120N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgx120n60a3-datasheets-3017.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 780W | NOT SPECIFIED | IXG*120N60 | 3 | Single | NOT SPECIFIED | 780W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 1.2V | 123 ns | 600V | 200A | 830 ns | 480V, 100A, 1.5 Ω, 15V | 20V | 5V | 1.35V @ 15V, 100A | PT | 450nC | 600A | 39ns/295ns | 2.7mJ (on), 6.6mJ (off) | |||||||||||||||||||||||||||||||||||||
| IXYX100N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixyx100n120c3-datasheets-3020.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 28 Weeks | 247 | AVALANCHE RATED | unknown | 1.15kW | 3 | Single | 1.15kW | 1 | Insulated Gate BIP Transistors | R-PSIP-T3 | 32 ns | 123 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1150W | 1.2kV | 2.9V | 122 ns | 1.2kV | 188A | 1200V | 265 ns | 600V, 100A, 1 Ω, 15V | 20V | 5V | 3.5V @ 15V, 100A | 270nC | 490A | 32ns/123ns | 6.5mJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||
| STGW25S120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa25s120df3-datasheets-0766.pdf | TO-247-3 | 40 Weeks | No SVHC | EAR99 | 375W | NOT SPECIFIED | STGW25 | NOT SPECIFIED | 375W | 265 ns | 1.2kV | 2.1V | 50A | 1200V | 600V, 25A, 15 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 80nC | 100A | 31ns/147ns | 830μJ (on), 2.37mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYK100N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixyx100n120c3-datasheets-3020.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 28 Weeks | 3 | AVALANCHE RATED | unknown | 1.15kW | 3 | Single | 1.15kW | 1 | Insulated Gate BIP Transistors | 32 ns | 123 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1150W | 1.2kV | 2.9V | 122 ns | 1.2kV | 188A | 1200V | 265 ns | 600V, 100A, 1 Ω, 15V | 20V | 5V | 3.5V @ 15V, 100A | 270nC | 490A | 32ns/123ns | 6.5mJ (on), 2.9mJ (off) | ||||||||||||||||||||||||||||||||||||||
| RJP60F4DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjp60f4dpm00t1-datasheets-2962.pdf | TO-3PFM, SC-93-3 | 16 Weeks | 3 | yes | EAR99 | 41.2W | NOT SPECIFIED | RJP60F | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 41.2W | 600V | 1.82V | 60A | 400V, 30A, 5 Ω, 15V | 1.82V @ 15V, 30A | Trench | 45ns/70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGD7NB60ST4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd7nb60st4-datasheets-2341.pdf | 600V | 7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | 55W | GULL WING | 260 | STGD7 | 3 | Single | 30 | 55W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 7A | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 600V | 600V | TO-252AA | 600V | 1.6V | 1160 ns | 600V | 15A | 480V, 7A, 1k Ω, 15V | 20V | 5V | 1.6V @ 15V, 7A | 33nC | 60A | 700ns/- | 3.5mJ (off) | |||||||||||||||||||||||||||||||||
| IXYL40N250CV1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/ixys-ixyl40n250cv1-datasheets-2970.pdf | ISOPLUSi5-Pak™ | 24 Weeks | yes | 577W | 210ns | 2500V | 70A | 1250V, 40A, 1 Ω, 15V | 4V @ 15V, 40A | 270nC | 400A | 21ns/200ns | 11.7mJ (on), 6.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGP30NC60K | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb30nc60kt4-datasheets-1108.pdf | TO-220-3 | Lead Free | 3 | yes | 185W | NOT SPECIFIED | STGP30 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | 29 ns | 120 μs | SILICON | POWER CONTROL | N-CHANNEL | 185W | 600V | TO-220AB | 600V | 41 ns | 600V | 60A | 290 ns | 480V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.7V @ 15V, 20A | 96nC | 125A | 29ns/120ns | 350μJ (on), 435μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IXBA16N170AHV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/ixys-ixbt16n170ahv-datasheets-0833.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | not_compliant | e3 | Matte Tin (Sn) | 150W | 25ns | 1700V | 16A | 1360V, 10A, 10 Ω, 15V | 6V @ 15V, 10A | 65nC | 40A | 15ns/250ns | 2.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bc40spbf-datasheets-2900.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | 160W | SINGLE | Dual | 160W | 1 | Insulated Gate BIP Transistors | 22 ns | 650 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.5V | 44 ns | 1.5V | 60A | 1940 ns | 480V, 31A, 10 Ω, 15V | 20V | 6V | 1.5V @ 15V, 31A | 100nC | 120A | 22ns/650ns | 450μJ (on), 6.5mJ (off) | 570ns | ||||||||||||||||||||||||||||||||||||||
| STGB20H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf20h60df-datasheets-9651.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | 20 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 167W | NOT SPECIFIED | STGB20 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 167W | 600V | 90 ns | 600V | 600V | 40A | 400V, 20A, 10 Ω, 15V | 20V | 2V @ 15V, 20A | Trench Field Stop | 115nC | 80A | 42.5ns/177ns | 209μJ (on), 261μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IGW20N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw20n60h3fksa1-datasheets-2913.pdf | TO-247-3 | 3 | 16 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 170W | 37 ns | 600V | 40A | 241 ns | 400V, 20A, 14.6 Ω, 15V | 2.4V @ 15V, 20A | Trench Field Stop | 120nC | 80A | 17ns/194ns | 800μJ |
