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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| APT33GF120B2RDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt33gf120lrdq2g-datasheets-4685.pdf | 1.2kV | 64A | TO-247-3 Variant | Lead Free | 3 | 29 Weeks | 3 | yes | No | e1 | TIN SILVER COPPER | 357W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 31 ns | 1.2kV | 64A | 1200V | 355 ns | 800V, 25A, 4.3 Ω, 15V | 6.5V | 3V @ 15V, 25A | NPT | 170nC | 75A | 14ns/185ns | 1.315mJ (on), 1.515mJ (off) | ||||||||||||||||||||||||||||||||||||
| APT25GN120BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt25gr120b-datasheets-5619.pdf | 1.2kV | 67A | TO-247-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 272W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 22 ns | 280 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 39 ns | 1.2kV | 67A | 1200V | 560 ns | 800V, 25A, 1 Ω, 15V | 30V | 6.5V | 2.1V @ 15V, 25A | Trench Field Stop | 155nC | 75A | 22ns/280ns | 2.15μJ (off) | ||||||||||||||||||||||||||||||
| STGWA40S120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40s120df3-datasheets-0674.pdf | TO-247-3 | 3 | 32 Weeks | No SVHC | ACTIVE (Last Updated: 7 months ago) | EAR99 | 468W | SINGLE | NOT SPECIFIED | STGWA40 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 468W | 355 ns | 1.2kV | 50 ns | 2.15V | 80A | 1200V | 158.46 ns | 600V, 40A, 15 Ω, 15V | 2.15V @ 15V, 40A | Trench Field Stop | 129nC | 160A | 35ns/148ns | 1.43mJ (on), 3.83mJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXYH40N120B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh40n120b3d1-datasheets-3515.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | AVALANCHE RATED | 480W | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 22 ns | 177 ns | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 480W | TO-247AD | 100 ns | 1.2kV | 84 ns | 2.9V | 86A | 1200V | 411 ns | 600V, 40A, 10 Ω, 15V | 20V | 5V | 2.9V @ 15V, 40A | 87nC | 180A | 22ns/177ns | 2.7mJ (on), 1.6mJ (off) | ||||||||||||||||||||||||||||||||||
| APT25GR120S | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt25gr120b-datasheets-5618.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 19 Weeks | EAR99 | 521W | Insulated Gate BIP Transistors | N-CHANNEL | 521W | 1.2kV | 3.2V | 75A | 1200V | 600V, 25A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 25A | NPT | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4062DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-irgp4062depbf-datasheets-9490.pdf | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 26 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 250W | Single | 250W | 1 | Insulated Gate BIP Transistors | 41 ns | 22ns | 104 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 89 ns | 600V | 1.65V | 64 ns | 1.95V | 48A | 164 ns | 400V, 24A, 10 Ω, 15V | 20V | 6.5V | 1.95V @ 15V, 24A | Trench | 50nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | |||||||||||||||||||||||||||||
| APT45GP120BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt45gp120bg-datasheets-3526.pdf | 1.2kV | 100A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 23 Weeks | 38.000013g | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 625W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 100A | TO-247AD | 1.2kV | 3.3V | 47 ns | 1.2kV | 100A | 1200V | 230 ns | 600V, 45A, 5 Ω, 15V | 3.9V @ 15V, 45A | PT | 185nC | 170A | 18ns/102ns | 900μJ (on), 904μJ (off) | |||||||||||||||||||||||||||||
| APT25GR120SD15 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt25gr120bd15-datasheets-5552.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 30 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | EAR99 | 521W | Insulated Gate BIP Transistors | 16 ns | 122 ns | N-CHANNEL | 521W | 1.2kV | 3.2V | 75A | 1200V | 600V, 25A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 25A | NPT | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| APT50GR120B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt50gr120l-datasheets-0778.pdf | TO-247-3 | Lead Free | 19 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | 694W | Insulated Gate BIP Transistors | N-CHANNEL | 694W | 1.2kV | 3.2V | 117A | 1200V | 600V, 50A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 50A | NPT | 445nC | 200A | 28ns/237ns | 2.14mJ (on), 1.48mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT64GA90B2D30 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/microsemicorporation-apt64ga90ld30-datasheets-0837.pdf | TO-247-3 Variant | 3 | 29 Weeks | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 500W | 3 | Single | 1 | R-PSIP-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 500W | TO-247AD | 900V | 44 ns | 900V | 117A | 352 ns | 600V, 38A, 4.7 Ω, 15V | 3.1V @ 15V, 38A | PT | 162nC | 193A | 18ns/131ns | 1192μJ (on), 1088μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXYH16N170C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/ixys-ixyh16n170c-datasheets-3535.pdf | TO-247-3 | 28 Weeks | yes | unknown | 310W | 19ns | 1700V | 40A | 850V, 16A, 10 Ω, 15V | 3.8V @ 15V, 16A | 56nC | 100A | 11ns/140ns | 2.1mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGF8NC60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd8nc60kdt4-datasheets-6389.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 24W | STGF8 | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 24W | TO-220AB | 23.5 ns | 600V | 23 ns | 600V | 7A | 242 ns | 390V, 3A, 10 Ω, 15V | 20V | 6.5V | 2.75V @ 15V, 3A | 19nC | 30A | 17ns/72ns | 55μJ (on), 85μJ (off) | |||||||||||||||||||||||||||||||||||||
| STGF6M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf6m65df2-datasheets-3540.pdf | TO-220-3 Full Pack | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STGF6 | NOT SPECIFIED | 24.2W | 140ns | 650V | 12A | 400V, 6A, 22 Ω, 15V | 2V @ 15V, 6A | Trench Field Stop | 21.2nC | 24A | 15ns/90ns | 36μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH40N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh40n120c3-datasheets-3492.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | 3 | AVALANCHE RATED | 577W | 3 | Single | 577W | 1 | Insulated Gate BIP Transistors | 24 ns | 125 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 3.6V | 99 ns | 1.2kV | 70A | 1200V | 178 ns | 600V, 40A, 10 Ω, 15V | 20V | 5V | 4V @ 15V, 40A | 85nC | 115A | 24ns/125ns | 3.9mJ (on), 660μJ (off) | ||||||||||||||||||||||||||||||||
| FGH30N60LSDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-fgh30n60lsdtu-datasheets-3543.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 7 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 480W | Single | 1 | Insulated Gate BIP Transistors | 18 ns | 250 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 480W | TO-247AB | 35 ns | 600V | 600V | 62 ns | 600V | 60A | 2870 ns | 400V, 30A, 6.8 Ω, 15V | 20V | 7V | 1.4V @ 15V, 30A | 225nC | 90A | 18ns/250ns | 1.1mJ (on), 21mJ (off) | 2000ns | ||||||||||||||||||||||||
| IKP40N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw40n65h5fksa1-datasheets-4919.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 16 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 255W | NOT SPECIFIED | Single | NOT SPECIFIED | 255W | 62 ns | 650V | 1.65V | 1.65V | 74A | 400V, 20A, 15 Ω, 15V | 2.1V @ 15V, 40A | 95nC | 120A | 22ns/165ns | 390μJ (on), 120μJ (off) | |||||||||||||||||||||||||||||||||||||||
| STGW10M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw10m65df2-datasheets-3499.pdf | TO-247-3 | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | STGW10 | 115W | 96ns | 650V | 20A | 400V, 10A, 22 Ω, 15V | 2V @ 15V, 10A | Trench Field Stop | 28nC | 40A | 19ns/91ns | 120μJ (on), 270μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB4M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb4m65df2-datasheets-3432.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STGB4 | NOT SPECIFIED | 68W | 133ns | 650V | 8A | 400V, 4A, 47 Ω, 15V | 2.1V @ 15V, 4A | Trench Field Stop | 15.2nC | 16A | 12ns/86ns | 40μJ (on), 136μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW40N65WR5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ikw40n65wr5xksa1-datasheets-3436.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | 230W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 230W | 112 ns | 650V | 63 ns | 650V | 80A | 510 ns | 400V, 20A, 20 Ω, 15V | 1.8V @ 15V, 40A | Trench | 193nC | 120A | 42ns/432ns | 770μJ (on), 160μJ (off) | ||||||||||||||||||||||||||||||||||||||
| STGP8NC60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd8nc60kdt4-datasheets-6389.pdf | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 8 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 65W | STGP8 | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | TO-220AB | 23.5ns | 600V | 23 ns | 600V | 7A | 15A | 242 ns | 390V, 3A, 10 Ω, 15V | 20V | 6.5V | 2.75V @ 15V, 3A | 19nC | 30A | 17ns/72ns | 55μJ (on), 85μJ (off) | ||||||||||||||||||||||||||||||||||
| STGB30H60DLFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30h60dlfb-datasheets-1393.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | 260W | NOT SPECIFIED | STGB30 | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 260W | 600V | 600V | 2V | 60A | 400V, 30A, 10 Ω, 15V | 20V | 7V | 2V @ 15V, 30A | Trench Field Stop | 149nC | 120A | -/146ns | 393μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| APT40GR120B2D30 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt40gr120b2d30-datasheets-3458.pdf | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 29 Weeks | 38.000013g | 3 | EAR99 | No | 500W | Single | Insulated Gate BIP Transistors | 22 ns | 163 ns | N-CHANNEL | 88A | 1.2kV | 2.5V | 1.2kV | 88A | 1200V | 600V, 40A, 4.3 Ω, 15V | 6V | 3.2V @ 15V, 40A | NPT | 210nC | 160A | 22ns/163ns | 1.38mJ (on), 906μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXGT2N250 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh2n250-datasheets-2445.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | yes | LOW CONDUCTION LOSS | e3 | Matte Tin (Sn) | 32W | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 32W | 2.5kV | 115 ns | 3.1V | 5.5A | 2500V | 278 ns | 20V | 5.5V | 3.1V @ 15V, 2A | 10.5nC | 13.5A | |||||||||||||||||||||||||||||||||||||
| APT50GN120B2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gn120b2g-datasheets-3466.pdf | 1.2kV | 134A | TO-247-3 Variant | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 543W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 55 ns | 1.2kV | 134A | 1200V | 600 ns | 800V, 50A, 2.2 Ω, 15V | 6.5V | 2.1V @ 15V, 50A | NPT, Trench Field Stop | 315nC | 150A | 28ns/320ns | 4495μJ (off) | ||||||||||||||||||||||||||||||||||
| IXGH40N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh40n120c3-datasheets-3469.pdf | TO-247-3 | 3 | 30 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 380W | SINGLE | NOT SPECIFIED | IXG*40N120 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 380W | TO-247AD | 1.2kV | 52 ns | 4.4V | 75A | 1200V | 475 ns | 600V, 30A, 3 Ω, 15V | 20V | 5V | 4.4V @ 15V, 30A | PT | 142nC | 200A | 17ns/130ns | 1.8mJ (on), 550μJ (off) | |||||||||||||||||||||||||||||||
| STGYA120M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgya120m65df2-datasheets-3471.pdf | TO-247-3 Exposed Pad | 30 Weeks | ACTIVE (Last Updated: 7 months ago) | STGYA120 | 625W | 202ns | 650V | 160A | 400V, 120A, 4.7 Ω, 15V | 1.95V @ 15V, 120A | NPT, Trench Field Stop | 420nC | 360A | 66ns/185ns | 1.8mJ (on), 4.41mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT80GA60B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt80ga60b-datasheets-3474.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.31mm | 3 | 33 Weeks | 38.000013g | yes | LOW CONDUCTION LOSS | No | e3 | PURE MATTE TIN | 625W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 143A | TO-247AD | 600V | 2V | 52 ns | 600V | 143A | 326 ns | 400V, 47A, 4.7 Ω, 15V | 30V | 6V | 2.5V @ 15V, 47A | PT | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | |||||||||||||||||||||||||||||||
| AOK20B135D1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aok20b135d1-datasheets-3605.pdf | TO-247-3 | 18 Weeks | unknown | 340W | 340W | 1.35kV | 1.8V | 40A | 1350V | 600V, 20A, 15 Ω, 15V | 1.8V @ 15V, 20A | 66nC | 80A | -/156ns | 1.05mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB40V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40v60f-datasheets-0540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | 2.000002g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 283W | NOT SPECIFIED | STGB40 | Single | NOT SPECIFIED | 283W | 600V | 600V | 1.8V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 2.3V @ 15V, 40A | Trench Field Stop | 226nC | 160A | 52ns/208ns | 456μJ (on), 411μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IKW50N65F5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw50n65f5fksa1-datasheets-3414.pdf | TO-247-3 | Lead Free | 16 Weeks | Unknown | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 305W | Single | 305W | 52 ns | 650V | 1.6V | 1.6V | 80A | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | 120nC | 150A | 21ns/175ns | 490μJ (on), 160μJ (off) |
