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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| STGB40V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40v60f-datasheets-0540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | 2.000002g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 283W | NOT SPECIFIED | STGB40 | Single | NOT SPECIFIED | 283W | 600V | 600V | 1.8V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 2.3V @ 15V, 40A | Trench Field Stop | 226nC | 160A | 52ns/208ns | 456μJ (on), 411μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW50N65F5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw50n65f5fksa1-datasheets-3414.pdf | TO-247-3 | Lead Free | 16 Weeks | Unknown | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 305W | Single | 305W | 52 ns | 650V | 1.6V | 1.6V | 80A | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | 120nC | 150A | 21ns/175ns | 490μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT36GA60BD15 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt36ga60bd15-datasheets-3490.pdf | TO-247-3 | 3 | 29 Weeks | LOW CONDUCTION LOSS | No | 290W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | 600V | 29 ns | 600V | 65A | 262 ns | 400V, 20A, 10 Ω, 15V | 30V | 6V | 2.5V @ 15V, 20A | PT | 18nC | 109A | 16ns/122ns | 307μJ (on), 254μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IRGS10B60KDTRLP | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 156W | 90ns | 600V | 22A | 400V, 10A, 47Ohm, 15V | 2.2V @ 15V, 10A | NPT | 38nC | 44A | 30ns/230ns | 140μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKB40N65EH5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ikb40n65eh5atma1-datasheets-3273.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 250W | 78ns | 650V | 74A | 400V, 40A, 15 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 95nC | 160A | 20ns/157ns | 1.1mJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGR20N40LTM | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-sgr20n40ltm-datasheets-3351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | GENERAL PURPOSE SWITCHING | N-CHANNEL | 45W | 1900 ns | 400V | 1800 ns | 8V @ 4.5V, 150A | Trench | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB15H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf15h60df-datasheets-1887.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | 20 Weeks | 2.000002g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 115W | NOT SPECIFIED | STGB15 | Single | NOT SPECIFIED | 115W | 600V | 103 ns | 600V | 1.6V | 600V | 30A | 400V, 15A, 10 Ω, 15V | 2V @ 15V, 15A | Trench Field Stop | 81nC | 60A | 24.5ns/118ns | 136μJ (on), 207μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IXEL40N400 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixel40n400-datasheets-3355.pdf | ISOPLUSi5-Pak™ | Lead Free | 3 | 61 Weeks | 3 | yes | UL RECOGNIZED | No | 380W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | GENERAL PURPOSE SWITCHING | N-CHANNEL | 4kV | 3V | 260 ns | 4kV | 40A | 4000V | 90A | 1170 ns | 2800V, 40A, 33 Ω, 15V | 20V | 7V | 3.2V @ 15V, 40A | 275nC | 400A | 160ns/630ns | 55mJ (on), 165mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| FGH75T65SQD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgh75t65sqdf155-datasheets-3357.pdf | TO-247-3 | 8 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | EAR99 | not_compliant | 8541.29.00.95 | 375W | NOT SPECIFIED | NOT SPECIFIED | 375W | 43 ns | 650V | 1.6V | 650V | 150A | Trench Field Stop | 128nC | 300A | 760μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGF15M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf15m65df2-datasheets-3365.pdf | TO-220-3 Full Pack | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | 31W | NOT SPECIFIED | STGF15 | NOT SPECIFIED | 31W | 142 ns | 650V | 2V | 30A | 400V, 15A, 12 Ω, 15V | 2V @ 15V, 15A | Trench Field Stop | 45nC | 60A | 24ns/93ns | 90μJ (on), 450μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGSL14C40LPBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Logic | ROHS3 Compliant | /files/rochesterelectronicsllc-irgs14c40lpbf-datasheets-3343.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 125W | 430V | 20A | 1.75V @ 5V, 14A | 27nC | 900ns/6μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW80H65DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt80h65dfb-datasheets-0626.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 20 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 469W | NOT SPECIFIED | STGW80 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 469W | 85 ns | 650V | 1.6V | 650V | 120A | 400V, 80A, 10 Ω, 15V | 20V | 2V @ 15V, 80A | Trench Field Stop | 414nC | 240A | 84ns/280ns | 2.1mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IXXK160N65B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | TO-264-3, TO-264AA | 28 Weeks | 940W | 160N65 | Single | 940W | Insulated Gate BIP Transistors | N-CHANNEL | 650V | 1.54V | 1.8V | 310A | 400V, 80A, 1 Ω, 15V | 20V | 6.5V | 1.8V @ 15V, 160A | PT | 425nC | 860A | 52ns/220ns | 3.3mJ (on), 1.88mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| HGTG27N120BN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-hgtg27n120bn-datasheets-3560.pdf | 1.2kV | 72A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 44 Weeks | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS, AVALANCHE RATED | No | 8541.29.00.95 | e3 | Tin (Sn) | 500W | Single | 500W | 1 | 24 ns | 240 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 72A | 1.2kV | 2.45V | 42 ns | 1.2kV | 72A | 1200V | 360 ns | 960V, 27A, 3 Ω, 15V | 2.7V @ 15V, 27A | NPT | 270nC | 216A | 24ns/195ns | 2.2mJ (on), 2.3mJ (off) | ||||||||||||||||||||||||||||||
| HGTG18N120BND | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-hgtg18n120bnd-datasheets-3568.pdf | 1.2kV | 54A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 10 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | NPN | 390W | Single | 390W | 1 | Insulated Gate BIP Transistors | 23 μs | 22ns | 170 μs | SILICON | MOTOR CONTROL | 75 ns | 1.2kV | 2.45V | 38 ns | 1.2kV | 54A | 1200V | 345 ns | 960V, 18A, 3 Ω, 15V | 20V | 2.7V @ 15V, 18A | NPT | 165nC | 160A | 23ns/170ns | 1.9mJ (on), 1.8mJ (off) | 200ns | ||||||||||||||||||||||||||||
| AOD5B60D | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aod5b60d-datasheets-3578.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | 54.4W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 54.4W | 98 ns | 600V | 1.8V | 23A | 400V, 5A, 60 Ω, 15V | 20V | 1.8V @ 15V, 5A | 9.4nC | 20A | 12ns/82ns | 140μJ (on), 40μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HGTP12N60A4 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-hgtg12n60a4-datasheets-1944.pdf | TO-220-3 | 3 | yes | LOW CONDUCTION LOSS | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 167W | TO-220AB | 33 ns | 600V | 54A | 180 ns | 390V, 12A, 10 Ω, 15V | 2.7V @ 15V, 12A | 78nC | 96A | 17ns/96ns | 55μJ (on), 50μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IKW40N65F5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikp40n65f5xksa1-datasheets-5197.pdf | TO-247-3 | 25.5mm | Lead Free | 26 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | 255W | NOT SPECIFIED | Single | NOT SPECIFIED | 255W | 175°C | 19 ns | 160 ns | 74A | 60 ns | 650V | 1.6V | 650V | 74A | 400V, 20A, 15 Ω, 15V | 2.1V @ 15V, 40A | 95nC | 120A | 19ns/160ns | 360μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IGW30N100TFKSA1 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-igw30n100tfksa1-datasheets-3337.pdf | TO-247-3 | PG-TO247-3 | 412W | 1V | 60A | 600V, 30A, 16Ohm, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 217nC | 90A | 33ns/535ns | 3.8mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGF7NB60SL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf7nb60sl-datasheets-3409.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 8 Weeks | 2.299997g | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 25W | STGF7 | 3 | Single | 25W | 1 | Insulated Gate BIP Transistors | 1.1 μs | 250ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 15A | 600V | 1.2V | 1350 ns | 600V | 15A | 8100 ns | 480V, 7A, 1k Ω, 5V | 20V | 2.4V | 1.6V @ 4.5V, 7A | 16nC | 20A | 1.1μs/5.2μs | 4.1mJ (off) | |||||||||||||||||||||||||||||||
| FGH40T65UPD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgh40t65upd-datasheets-3338.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 50 Weeks | 6.39g | 3 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | 8541.29.00.95 | e3 | 268W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 268W | TO-247AB | 43 ns | 650V | 2.1V | 57 ns | 650V | 80A | 213 ns | 400V, 40A, 7 Ω, 15V | 20V | 7.5V | 2.3V @ 15V, 40A | Trench Field Stop | 177nC | 120A | 20ns/144ns | 1.59mJ (on), 580μJ (off) | 22ns | |||||||||||||||||||||||||||||
| IRGB4640DPBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-irgp4750dpbf-datasheets-0209.pdf | TO-220-3 | TO-220AC | 250W | 89ns | 600V | 65A | 400V, 24A, 10Ohm, 15V | 1.9V @ 15V, 24A | 75nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBT12N300 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixbh12n300-datasheets-4590.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | yes | LOW CONDUCTION LOSS | not_compliant | e3 | Matte Tin (Sn) | 160W | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 160W | 1.4 μs | 3kV | 460 ns | 3.2V | 30A | 3000V | 705 ns | 20V | 5V | 3.2V @ 15V, 12A | 62nC | 100A | |||||||||||||||||||||||||||||||||||||
| APT30GT60BRDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gt60brdq2g-datasheets-3287.pdf | 600V | 64A | TO-247-3 | Lead Free | 3 | 25 Weeks | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 22 ns | 600V | 32 ns | 600V | 64A | 345 ns | 400V, 30A, 10 Ω, 15V | 30V | 5V | 2.5V @ 15V, 30A | NPT | 7.5nC | 110A | 12ns/225ns | 80μJ (on), 605μJ (off) | ||||||||||||||||||||||||||||||||||||
| STGWT15H60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | H | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt15h60f-datasheets-3290.pdf | TO-3P-3, SC-65-3 | 32 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STGWT15 | NOT SPECIFIED | 115W | 600V | 30A | 400V, 15A, 10 Ω, 15V | 2V @ 15V, 15A | Trench Field Stop | 81nC | 60A | 24.5ns/118ns | 136μJ (on), 207μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGW15T120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw15t120fksa1-datasheets-3293.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 110W | TO-247AD | 85 ns | 1200V | 30A | 720 ns | 600V, 15A, 56 Ω, 15V | 2.2V @ 15V, 15A | NPT, Trench Field Stop | 85nC | 45A | 50ns/520ns | 2.7mJ | |||||||||||||||||||||||||||||||||||||||||
| IKP10N60TXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/infineontechnologies-ikp10n60txksa1-datasheets-3296.pdf | TO-220-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 110W | 115ns | 21 ns | 600V | 20A | 296 ns | 400V, 10A, 23 Ω, 15V | 2.05V @ 15V, 10A | NPT, Trench Field Stop | 62nC | 30A | 12ns/215ns | 430μJ | |||||||||||||||||||||||||||||||||||||||||
| IKP15N60TXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/infineontechnologies-ikp15n60txksa1-datasheets-3301.pdf | TO-220-3 | 3 | 16 Weeks | yes | EAR99 | HIGH SPEED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 130W | TO-220AB | 34ns | 32 ns | 600V | 30A | 291 ns | 400V, 15A, 15 Ω, 15V | 2.05V @ 15V, 15A | Trench Field Stop | 87nC | 45A | 17ns/188ns | 570μJ | |||||||||||||||||||||||||||||||||||||||
| FGP20N6S2D | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-fgb20n6s2d-datasheets-1761.pdf | TO-220-3 | 3 | yes | LOW CONDUCTION LOSS | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 125W | TO-220AB | 31ns | 11.5 ns | 600V | 28A | 205 ns | 390V, 7A, 25 Ω, 15V | 2.7V @ 15V, 7A | 30nC | 40A | 7.7ns/87ns | 25μJ (on), 58μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| STGYA120M65DF2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgya120m65df2ag-datasheets-3307.pdf | TO-247-3 | 30 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STGYA120 | NOT SPECIFIED | 625W | 202ns | 650V | 160A | 400V, 120A, 4.7 Ω, 15V | 2.15V @ 15V, 120A | Trench Field Stop | 420nC | 360A | 66ns/185ns | 1.8mJ (on), 4.41mJ (off) |
