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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| NGB8206NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Logic | RoHS Compliant | 2009 | /files/littelfuseinc-ngb8206ntf4g-datasheets-4554.pdf | 350V | 20A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | EAR99 | e3 | Tin (Sn) | 150W | SINGLE | GULL WING | 260 | NGB8206 | 3 | 40 | 150W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 390V | 6500 ns | 1.9V | 20A | 8000ns | 18500 ns | 300V, 9A, 1k Ω, 5V | 15V | 2.1V | 1.9V @ 4.5V, 20A | 50A | -/5μs | 14000ns | ||||||||||||||||||||||
| APT15GT60KRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2008 | /files/microsemicorporation-apt15gt60krg-datasheets-4679.pdf | 600V | 42A | TO-220-3 | Lead Free | 3 | 3 | yes | No | e3 | PURE MATTE TIN | 184W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 14 ns | 2.5V | 42A | 225 ns | 400V, 15A, 10 Ω, 15V | 5V | 2.5V @ 15V, 15A | NPT | 75nC | 45A | 6ns/105ns | 150μJ (on), 215μJ (off) | ||||||||||||||||||||||||||||
| APT15GP60KG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/microsemicorporation-apt15gp60kg-datasheets-4680.pdf | 600V | 56A | TO-220-3 | Lead Free | 3 | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 250W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 20 ns | 600V | 56A | 157 ns | 400V, 15A, 5 Ω, 15V | 2.7V @ 15V, 15A | PT | 55nC | 65A | 8ns/29ns | 130μJ (on), 121μJ (off) | |||||||||||||||||||||||||||||
| APT15GP90KG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2006 | /files/microsemicorporation-apt15gp90kg-datasheets-4682.pdf | 900V | 43A | TO-220-3 | Lead Free | 3 | yes | LOW CONDUCTION LOSS | No | e3 | PURE MATTE TIN | 250W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 900V | 23 ns | 900V | 43A | 170 ns | 600V, 15A, 4.3 Ω, 15V | 3.9V @ 15V, 15A | PT | 60nC | 60A | 9ns/33ns | 200μJ (off) | |||||||||||||||||||||||||||||
| APT30GT60KRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2008 | /files/microsemicorporation-apt30gt60krg-datasheets-4684.pdf | 600V | 64A | TO-220-3 | Lead Free | 3 | yes | No | e3 | PURE MATTE TIN | 250W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 32 ns | 600V | 64A | 345 ns | 400V, 30A, 10 Ω, 15V | 30V | 5V | 2.5V @ 15V, 30A | NPT | 145nC | 110A | 12ns/225ns | 525μJ (on), 600μJ (off) | ||||||||||||||||||||||||||||
| APT33GF120LRDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt33gf120lrdq2g-datasheets-4685.pdf | 1.2kV | 64A | TO-264-3, TO-264AA | Lead Free | 3 | 38 Weeks | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 357W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 31 ns | 1.2kV | 64A | 1200V | 355 ns | 800V, 25A, 4.3 Ω, 15V | 30V | 6.5V | 3V @ 15V, 25A | NPT | 170nC | 75A | 14ns/185ns | 1.315mJ (on), 1.515mJ (off) | ||||||||||||||||||||||||||
| IXEH25N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/ixys-ixeh25n120-datasheets-4686.pdf | TO-3P-3 Full Pack | 3 | 6.500007g | 200W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 200W | TO-247AD | 130 ns | 1.2kV | 3.2V | 210 ns | 3.2V | 36A | 1200V | 750 ns | 600V, 20A, 68 Ω, 15V | 3.2V @ 15V, 25A | NPT | 100nC | 4.1mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||
| IXEH25N120D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/ixys-ixeh25n120-datasheets-4686.pdf | TO-3P-3 Full Pack | 3 | 6.500007g | 200W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 200W | TO-247AD | 130 ns | 1.2kV | 3.2V | 210 ns | 3.2V | 36A | 1200V | 750 ns | 600V, 20A, 68 Ω, 15V | 3.2V @ 15V, 25A | NPT | 100nC | 4.1mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||
| FGPF120N30TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/onsemiconductor-fgpf120n30tu-datasheets-4692.pdf | TO-220-3 Full Pack | 3 | 60W | Single | 60W | 300V | 300V | 120A | 1.4V @ 15V, 25A | 112nC | 180A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH5N160G | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixbh5n160g-datasheets-4697.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 6.500007g | 3 | yes | 68W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 68W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.6kV | 4.9V | 340 ns | 1.6kV | 5.7A | 1600V | 190 ns | 960V, 3A, 47 Ω, 10V | 20V | 5.5V | 7.2V @ 15V, 3A | 26nC | ||||||||||||||||||||||||||||
| APT40GP60BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt40gp60bg-datasheets-4663.pdf | 600V | 100A | TO-247-3 | Lead Free | 3 | 5 Weeks | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 543W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 49 ns | 600V | 100A | 158 ns | 400V, 40A, 5 Ω, 15V | 2.7V @ 15V, 40A | PT | 135nC | 160A | 20ns/64ns | 385μJ (on), 352μJ (off) | |||||||||||||||||||||||||||
| NGD8205NT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ngd8205nt4-datasheets-4670.pdf | 350V | 20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 125W | SINGLE | GULL WING | 240 | NGD8205N | 3 | 30 | 125W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 390V | 6500 ns | 1.9V | 20A | 8000ns | 18500 ns | 300V, 9A, 1k Ω, 5V | 15V | 2.1V | 1.9V @ 4.5V, 20A | 50A | -/5μs | 14000ns | |||||||||||||||||||||
| NGB8206NT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | Non-RoHS Compliant | 2010 | /files/littelfuseinc-ngb8206ntf4g-datasheets-4554.pdf | 350V | 20A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | VOLTAGE CLAMPING | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 150W | SINGLE | GULL WING | 240 | NGB8206 | 3 | 30 | 150W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 390V | 6500 ns | 1.9V | 20A | 8000ns | 18500 ns | 300V, 9A, 1k Ω, 5V | 15V | 1.9V @ 4.5V, 20A | 50A | -/5μs | 14000ns | ||||||||||||||||||||||
| NGB8206NTF4G | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 2 (1 Year) | Logic | ROHS3 Compliant | /files/littelfuseinc-ngb8206ntf4g-datasheets-4554.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NGB8206 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 150W | 6500 ns | 390V | 20A | 18500 ns | 1.9V @ 4.5V, 20A | |||||||||||||||||||||||||||||||||||||||||
| APT11GF120KRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/microsemicorporation-apt11gf120krg-datasheets-4556.pdf | 1.2kV | 25A | TO-220-3 | Lead Free | 3 | yes | FAST SWITCHING | No | e3 | PURE MATTE TIN | 156W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 1.2kV | 12 ns | 1.2kV | 25A | 1200V | 161 ns | 800V, 8A, 10 Ω, 15V | 30V | 6.5V | 3V @ 15V, 8A | NPT | 65nC | 44A | 7ns/100ns | 300μJ (on), 285μJ (off) | ||||||||||||||||||||||||||
| NGD8201NT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ngd8201nt4-datasheets-4559.pdf | 400V | 20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | no | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 125W | SINGLE | GULL WING | 240 | NGD8201N | 3 | 30 | 125W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 440V | 6500 ns | 1.9V | 20A | 14000ns | 18500 ns | 300V, 9A, 1k Ω, 5V | 15V | 1.9V @ 4.5V, 20A | 50A | -/5μs | 7000ns | |||||||||||||||||||||||
| NGB8206NTF4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 2 (1 Year) | 175°C | -55°C | Logic | Non-RoHS Compliant | 2009 | 400V | 20A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 150W | SINGLE | GULL WING | 240 | NGB8206 | 4 | 30 | 1 | Not Qualified | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 390V | 6500 ns | 1.9V | 20A | 18500 ns | 300V, 9A, 1k Ω, 5V | 1.9V @ 4.5V, 20A | 50A | -/5μs | |||||||||||||||||||||||||||||
| APT11GP60BDQBG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/microsemicorporation-apt11gp60bdqbg-datasheets-4595.pdf | 600V | 41A | TO-247-3 | Lead Free | 3 | yes | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 187W | TO-247AD | 16 ns | 600V | 150 ns | 400V, 11A, 5 Ω, 15V | 2.7V @ 15V, 11A | PT | 40nC | 45A | 7ns/29ns | 46μJ (on), 90μJ (off) |
