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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IRGB4059DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2001 | /files/infineontechnologies-irgb4059dpbf-datasheets-5139.pdf | TO-220-3 | 10.66mm | 9.02mm | 4.82mm | Lead Free | 3 | 6.000006g | No SVHC | 3 | EAR99 | ULTRA FAST SOFT RECOVERY | No | 56W | Single | 56W | 1 | Insulated Gate BIP Transistors | 25 ns | 10ns | 65 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 55 ns | 2.2V | 1.75V | 35 ns | 2.05V | 8A | 600V | 120 ns | 400V, 4A, 100 Ω, 15V | 20V | 6.5V | 2.05V @ 15V, 4A | Trench | 9nC | 16A | 25ns/65ns | 35μJ (on), 75μJ (off) | 20ns | ||||||||||||||||||||||||||||||
| STGB20NC60V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb20nc60v-datasheets-5090.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8.5mm | 4.6mm | 15mm | Lead Free | 2.240009g | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | 200W | STGB20 | Single | 31 ns | 100 ns | 60A | 600V | 600V | 1.8V | 600V | 60A | 390V, 20A, 3.3 Ω, 15V | 2.5V @ 15V, 20A | 100nC | 100A | 31ns/100ns | 220μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IRG4RC10UDTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | 2004 | /files/infineontechnologies-irg4rc10udpbf-datasheets-5100.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | compliant | IRG4RC10UDPBF | 38W | 28ns | 600V | 8.5A | 480V, 5A, 100 Ω, 15V | 2.6V @ 15V, 5A | 15nC | 34A | 40ns/87ns | 140μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH30N60B2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2003 | /files/ixys-ixgt30n60b2-datasheets-4886.pdf | TO-247-3 | 3 | 6.500007g | 3 | yes | 190W | NOT SPECIFIED | IXG*30N60 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-247AD | 600V | 30 ns | 600V | 70A | 350 ns | 400V, 24A, 5 Ω, 15V | 1.8V @ 15V, 24A | PT | 66nC | 150A | 13ns/110ns | 320μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| HGT1S12N60A4S9A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | /files/onsemiconductor-hgt1s12n60a4s9a-datasheets-5081.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | HGT1S12N60 | 167W | 600V | 54A | 390V, 12A, 10 Ω, 15V | 2.7V @ 15V, 12A | 78nC | 96A | 17ns/96ns | 55μJ (on), 50μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW35NB60S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35nb60s-datasheets-5094.pdf | TO-247-3 | 3 | 3 | EAR99 | No | 200W | STGW35 | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 200W | 600V | 153 ns | 600V | 70A | 3600 ns | 480V, 20A, 100 Ω, 15V | 20V | 5V | 1.7V @ 15V, 20A | 83nC | 250A | 92ns/1.1μs | 840μJ (on), 7.4mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IRG4RC10SDTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | 2007 | /files/infineontechnologies-irg4rc10sdpbf-datasheets-5071.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | IRG4RC10SDPBF | 38W | 28ns | 600V | 14A | 480V, 8A, 100 Ω, 15V | 1.8V @ 15V, 8A | 15nC | 18A | 76ns/815ns | 310μJ (on), 3.28mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW30N90D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30n90d-datasheets-5098.pdf | TO-247-3 | 3 | 220W | NOT SPECIFIED | STGW30 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | 220W | 152 ns | 900V | 41 ns | 900V | 60A | 928 ns | 900V, 20A, 10 Ω, 15V | 25V | 5.75V | 2.75V @ 15V, 20A | 110nC | 135A | 29ns/275ns | 1.66mJ (on), 4.44mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IRG4RC10UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | Standard | RoHS Compliant | 1999 | /files/infineontechnologies-irg4rc10udpbf-datasheets-5100.pdf | 600V | 8.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 1.2446mm | 6.22mm | Contains Lead | 2 | 17 Weeks | 350.003213mg | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 38W | GULL WING | 260 | IRG4RC10UDPBF | Single | 30 | 38W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 40 ns | 16ns | 87 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | TO-252AA | 28 ns | 600V | 2.6V | 56 ns | 2.6V | 8.5A | 345 ns | 480V, 5A, 100 Ω, 15V | 20V | 2.6V @ 15V, 5A | 15nC | 34A | 40ns/87ns | 140μJ (on), 120μJ (off) | 210ns | ||||||||||||||||||||||
| HGT1S7N60A4DS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/onsemiconductor-hgt1s7n60a4ds-datasheets-5109.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 125W | Single | 125W | 22 ns | 600V | 1.9V | 600V | 34A | 390V, 7A, 25 Ω, 15V | 2.7V @ 15V, 7A | 37nC | 56A | 11ns/100ns | 55μJ (on), 60μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA25N120FTD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/onsemiconductor-fga25n120ftd-datasheets-5112.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 313W | Single | 48 ns | 210 ns | 313W | 770 ns | 1.2kV | 1.2kV | 50A | 1200V | 600V, 25A, 15 Ω, 15V | 2V @ 15V, 25A | Trench Field Stop | 160nC | 75A | 48ns/210ns | 340μJ (on), 900μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4RC10KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4rc10kdpbf-datasheets-5115.pdf | 600V | 9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 3 | No | 38W | IRG4RC10KDPBF | Single | 38W | D-Pak | 38W | 28 ns | 600V | 2.62V | 2.62V | 9A | 600V | 9A | 480V, 5A, 100Ohm, 15V | 2.62V @ 15V, 5A | 19nC | 18A | 49ns/97ns | 250μJ (on), 140μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IRG4RC20FPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | IRG4RC20FPBF | 30 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 66W | 66W | TO-252AA | 51 ns | 600V | 22A | 706 ns | 480V, 12A, 50 Ω, 15V | 20V | 6V | 2.1V @ 15V, 12A | 27nC | 44A | 26ns/194ns | 190μJ (on), 920μJ (off) | 340ns | ||||||||||||||||||||||||||||||||||||||||
| IRG4PF50WD-201P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4pf50wd201p-datasheets-5118.pdf | TO-247-3 | 3 | 200W | Single | TO-247AC | 200W | 90 ns | 900V | 2.7V | 51A | 900V | 51A | 720V, 28A, 5Ohm, 15V | 2.7V @ 15V, 28A | 160nC | 204A | 50ns/110ns | 2.63mJ (on), 1.34mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGIB6B60KD116P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | 2004 | TO-220-3 Full Pack | 38W | 70ns | 600V | 11A | 400V, 5A, 100 Ω, 15V | 2.2V @ 15V, 5A | NPT | 18.2nC | 22A | 25ns/215ns | 110μJ (on), 135μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGSL30B60KPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/infineontechnologies-irgs30b60kpbf-datasheets-5040.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | 3 | 11 Weeks | 2.084002g | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 370W | 260 | Single | 30 | 370W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 600V | 2.35V | 74 ns | 2.35V | 78A | 237 ns | 400V, 30A, 10 Ω, 15V | 20V | 5.5V | 2.35V @ 15V, 30A | NPT | 102nC | 120A | 46ns/185ns | 350μJ (on), 825μJ (off) | 42ns | |||||||||||||||||||||||||||||||||||
| IRGI4085-111PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -40°C | Standard | RoHS Compliant | 2007 | /files/infineon-irgi4085111pbf-datasheets-4775.pdf | TO-220-3 Full Pack | 38W | 38W | TO-220AB Full-Pak | 38W | 330V | 1.5V | 1.5V | 28A | 330V | 28A | 196V, 25A, 10Ohm | 1.5V @ 28V, 15A | Trench | 84nC | 48ns/180ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB6NC60HD-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp6nc60h-datasheets-5012.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | No | 56W | STGB6 | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 56W | 21 ns | 600V | 17.3 ns | 600V | 15A | 222 ns | 390V, 3A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 3A | 13.6nC | 21A | 12ns/76ns | 20μJ (on), 68μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IRG4RC10SDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4rc10sdpbf-datasheets-5071.pdf | 600V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 1.2446mm | 6.22mm | Lead Free | 2 | 8 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | e3 | MATTE TIN OVER NICKEL | 38W | GULL WING | 260 | IRG4RC10SDPBF | Single | 30 | 38W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 31ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-252AA | 28 ns | 600V | 1.7V | 106 ns | 1.8V | 14A | 1780 ns | 480V, 8A, 100 Ω, 15V | 20V | 6V | 1.8V @ 15V, 8A | 15nC | 18A | 76ns/815ns | 310μJ (on), 3.28mJ (off) | 1080ns | |||||||||||||||||||||||||
| IXST45N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2000 | /files/ixys-ixsh45n120-datasheets-4910.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 4.500005g | yes | e3 | Matte Tin (Sn) | 300W | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 300W | 1.2kV | 3V | 67 ns | 1.2kV | 75A | 1200V | 1140 ns | 960V, 45A, 5 Ω, 15V | 20V | 6V | 3V @ 15V, 45A | PT | 120nC | 180A | 36ns/360ns | 13mJ (off) | |||||||||||||||||||||||||||||||||||||
| FGA15N120FTDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/onsemiconductor-fga15n120ftdtu-datasheets-5082.pdf | TO-3P-3, SC-65-3 | Lead Free | 6.40101g | 3 | No | 220W | Single | 33 ns | 160 ns | 220W | 575 ns | 1.2kV | 1.2kV | 30A | 1200V | 2V @ 15V, 15A | Trench Field Stop | 100nC | 45A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW35NC60WD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35nc60wd-datasheets-5088.pdf | TO-247-3 | 3 | No SVHC | 3 | EAR99 | No | 260W | STGW35 | 3 | Single | 250W | 1 | Insulated Gate BIP Transistors | 12ns | SILICON | POWER CONTROL | N-CHANNEL | 260W | TO-247AC | 40 ns | 600V | 2.5V | 42.5 ns | 600V | 70A | 197 ns | 390V, 20A, 10 Ω, 15V | 20V | 5.75V | 2.6V @ 15V, 20A | 102nC | 150A | 29.5ns/118ns | 305μJ (on), 181μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IRG4PC40KDE206P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4pc40kde206p-datasheets-5034.pdf | TO-247-3 | 3 | 160W | Single | TO-247AC | 160W | 42 ns | 600V | 2.6V | 42A | 600V | 42A | 480V, 25A, 10Ohm, 15V | 2.6V @ 15V, 25A | 120nC | 84A | 53ns/110ns | 950μJ (on), 760μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGF10NC60HD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | Not Applicable | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf10nc60hd-datasheets-5037.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 24W | STGF10 | 3 | Single | 23W | 1 | Insulated Gate BIP Transistors | 6ns | SILICON | MOTOR CONTROL | N-CHANNEL | 24W | TO-220AB | 22 ns | 600V | 2.5V | 19 ns | 600V | 9A | 247 ns | 390V, 5A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 5A | 19.2nC | 30A | 14.2ns/72ns | 31.8μJ (on), 95μJ (off) | |||||||||||||||||||||||||||||||||||
| FGPF70N30TDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/onsemiconductor-fgpf70n30tdtu-datasheets-5039.pdf | TO-220-3 Full Pack | 3 | 49.2W | Single | 21ns | 300V | 300V | 1.5V @ 15V, 20A | Trench | 125nC | 160A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGS30B60KPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/infineontechnologies-irgs30b60kpbf-datasheets-5040.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 4.83mm | Lead Free | 2 | 11 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 370W | GULL WING | 260 | IRGS30B60KPBF | Single | 30 | 370W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 46 ns | 185 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 600V | 2.35V | 74 ns | 2.35V | 78A | 237 ns | 400V, 30A, 10 Ω, 15V | 20V | 5.5V | 2.35V @ 15V, 30A | NPT | 102nC | 120A | 46ns/185ns | 350μJ (on), 825μJ (off) | 42ns | |||||||||||||||||||||||||||||
| STGB7NB40LZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb7nb40lzt4-datasheets-5048.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | VOLTAGE CLAMPING | not_compliant | e3 | Matte Tin (Sn) - annealed | 100W | GULL WING | 245 | STGB7 | 3 | Single | 30 | 70W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 100W | 430V | 1.5V | 5400 ns | 1.9V | 14A | 8000 ns | 300V, 46 Ω, 5V | 12V | 2.2V | 1.9V @ 5V, 14A | 22nC | 900ns/4.4μs | |||||||||||||||||||||||||||||||||||||
| STGF12NB60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | Tape & Reel (TR) | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf12nb60kd-datasheets-5050.pdf | TO-220-3 Full Pack | 3 | unknown | 30W | STGF12 | 30W | 37 ns | 600V | 2.8V | 14A | 480V, 12A, 10 Ω, 15V | 2.8V @ 15V, 12A | 54nC | 60A | 25ns/96ns | 152μJ (on), 258μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC30K-STRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2000 | /files/infineontechnologies-irg4bc30kstrrp-datasheets-5052.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | No | 100W | IRG4BC30K-SPBF | Single | D2PAK | 100W | 600V | 2.7V | 28A | 600V | 28A | 480V, 16A, 23Ohm, 15V | 2.7V @ 15V, 16A | 67nC | 56A | 26ns/130ns | 360μJ (on), 510μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGP6NC60H | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stgp6nc60h-datasheets-5012.pdf | TO-220-3 | 3 | 3 | EAR99 | No | e3 | Tin (Sn) | 56W | STGP6 | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | TO-220AB | 21ns | 600V | 17.3 ns | 600V | 7A | 15A | 222 ns | 390V, 3A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 3A | 13.6nC | 21A | 12ns/76ns | 20μJ (on), 68μJ (off) |
