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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| RJP60V0DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/renesaselectronicsamerica-rjp60v0dpm00t1-datasheets-2868.pdf | TO-3PFM, SC-93-3 | 3 | 16 Weeks | 3 | yes | EAR99 | 40W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 40W | 600V | 85 ns | 2.1V | 45A | 170 ns | 300V, 22A, 5 Ω, 15V | 7.5V | 2.1V @ 15V, 22A | Trench | 75nC | 45ns/100ns | |||||||||||||||||||||||||||||||||||||||||||||
| STGWT60V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa60v60df-datasheets-2509.pdf | TO-3P-3, SC-65-3 | 15.7mm | 26.7mm | 5.7mm | Lead Free | 32 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 375W | STGWT60 | Single | 375W | 60 ns | 208 ns | 74ns | 600V | 2.35V | 600V | 80A | 400V, 60A, 4.7 Ω, 15V | 2.3V @ 15V, 60A | Trench Field Stop | 334nC | 240A | 60ns/208ns | 750μJ (on), 550μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| STGFW40V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40v60df-datasheets-5258.pdf | TO-3PFM, SC-93-3 | 32 Weeks | 6.961991g | 3 | EAR99 | Tin | 62.5W | NOT SPECIFIED | STGFW40 | Single | NOT SPECIFIED | 62.5W | 41 ns | 600V | 1.8V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 2.3V @ 15V, 40A | Trench Field Stop | 226nC | 160A | 52ns/208ns | 456μJ (on), 411μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB30N60L2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-ngtb30n60l2wg-datasheets-2893.pdf | TO-247-3 | Lead Free | 11 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 225W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 225W | 70 ns | 600V | 1.6V | 100A | 300V, 30A, 30 Ω, 15V | 20V | 6.5V | 1.6V @ 15V, 30A | 166nC | 60A | 100ns/390ns | 310μJ (on), 1.14mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRG4PC40S-E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirg4pc40se-datasheets-2896.pdf | TO-247-3 | 25 Weeks | EAR99 | 160W | NOT SPECIFIED | NOT SPECIFIED | 160W | 600V | 1.5V | 60A | 480V, 31A, 10 Ω, 15V | 1.5V @ 15V, 31A | 150nC | 120A | 22ns/650ns | 450μJ (on), 6.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bc40spbf-datasheets-2900.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | 160W | SINGLE | Dual | 160W | 1 | Insulated Gate BIP Transistors | 22 ns | 650 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.5V | 44 ns | 1.5V | 60A | 1940 ns | 480V, 31A, 10 Ω, 15V | 20V | 6V | 1.5V @ 15V, 31A | 100nC | 120A | 22ns/650ns | 450μJ (on), 6.5mJ (off) | 570ns | ||||||||||||||||||||||||||||||||||
| STGB20H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf20h60df-datasheets-9651.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | 20 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 167W | NOT SPECIFIED | STGB20 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 167W | 600V | 90 ns | 600V | 600V | 40A | 400V, 20A, 10 Ω, 15V | 20V | 2V @ 15V, 20A | Trench Field Stop | 115nC | 80A | 42.5ns/177ns | 209μJ (on), 261μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IGW20N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw20n60h3fksa1-datasheets-2913.pdf | TO-247-3 | 3 | 16 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 170W | 37 ns | 600V | 40A | 241 ns | 400V, 20A, 14.6 Ω, 15V | 2.4V @ 15V, 20A | Trench Field Stop | 120nC | 80A | 17ns/194ns | 800μJ | |||||||||||||||||||||||||||||||||||||||||||
| STGW40H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa40h65fb-datasheets-0486.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 20 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 283W | STGW40 | Single | 283W | 650V | 1.6V | 650V | 80A | 400V, 40A, 5 Ω, 15V | 2.3V @ 15V, 40A | Trench Field Stop | 210nC | 160A | 40ns/142ns | 498mJ (on), 363mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| RGTH60TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgth60ts65gc11-datasheets-2923.pdf | TO-247-3 | 3 | 17 Weeks | Unknown | 3 | yes | EAR99 | 194W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 30A | 197W | 650V | 1.6V | 67 ns | 650V | 58A | 179 ns | 400V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 58nC | 120A | 27ns/105ns | ||||||||||||||||||||||||||||||||||||||||||||
| RJH1CV7DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-rjh1cv7dpk00t0-datasheets-2935.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 3 | yes | EAR99 | 320W | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 320W | 200 ns | 1.2kV | 2.3V | 70A | 1200V | 600V, 35A, 5 Ω, 15V | 2.3V @ 15V, 35A | Trench | 166nC | 53ns/185ns | 3.2mJ (on), 2.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| RJP6085DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/renesaselectronicsamerica-rjp6085dpk00t0-datasheets-2937.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | yes | EAR99 | 178.5W | NOT SPECIFIED | 4 | NOT SPECIFIED | Insulated Gate BIP Transistors | 30 ns | 60 ns | N-CHANNEL | 178.5W | 600V | 3.5V | 40A | 30V | 6V | 3.5V @ 15V, 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFGB40T65SQDN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/onsemiconductor-afgb40t65sqdn-datasheets-2941.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | yes | not_compliant | e3 | Tin (Sn) | 238W | 131ns | 650V | 80A | 400V, 40A, 6 Ω, 15V | 2.1V @ 15V, 40A | 76nC | 160A | 17.6ns/75.2ns | 858μJ (on), 229μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGT60TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgt60ts65dgc11-datasheets-2848.pdf | TO-247-3 | 3 | 15 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 194W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 30A | 194W | 58 ns | 650V | 1.65V | 70 ns | 650V | 55A | 218 ns | 400V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 58nC | 90A | 29ns/100ns | ||||||||||||||||||||||||||||||||||||||||||
| STGB25N40LZAG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | ROHS3 Compliant | /files/stmicroelectronics-stgd25n40lzag-datasheets-6601.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STGB25 | NOT SPECIFIED | 150W | 435V | 25A | 300V, 10A, 1k Ω, 5V | 1.25V @ 4V, 6A | 26nC | 50A | 1.1μs/4.6μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC30WPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2003 | /files/infineontechnologies-irg4bc30wpbf-datasheets-2736.pdf | 600V | 23A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 16 Weeks | 6.000006g | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 100W | SINGLE | Dual | 100W | 1 | Insulated Gate BIP Transistors | 25 ns | 17ns | 99 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 2.7V | 41 ns | 2.7V | 23A | 300 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.7V @ 15V, 12A | 51nC | 92A | 25ns/99ns | 130μJ (on), 130μJ (off) | 100ns | ||||||||||||||||||||||||||||
| IGP40N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw40n65h5fksa1-datasheets-2932.pdf | TO-220-3 | 16 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 255W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 255W | 650V | 1.65V | 1.65V | 74A | 400V, 20A, 15 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 40A | 95nC | 120A | 22ns/165ns | 390μJ (on), 120μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| NGTB40N65IHRTG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | Not Applicable | ROHS3 Compliant | 2017 | /files/onsemiconductor-ngtb40n65ihrtg-datasheets-2762.pdf | 25 Weeks | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4IBC20FDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4ibc20fdpbf-datasheets-2768.pdf | 600V | 14.3A | TO-220-3 Full Pack | 10.7442mm | 16.129mm | 4.826mm | Lead Free | 3 | 16 Weeks | 3 | EAR99 | No | 34W | Single | 34W | 1 | Insulated Gate BIP Transistors | 20ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 37 ns | 600V | 2V | 63 ns | 2V | 14.3A | 610 ns | 480V, 9A, 50 Ω, 15V | 20V | 6V | 2V @ 15V, 9A | 27nC | 64A | 43ns/240ns | 250μJ (on), 640μJ (off) | |||||||||||||||||||||||||||||||||||
| STGB30V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30v60df-datasheets-5894.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 2.240009g | EAR99 | 258W | GULL WING | NOT SPECIFIED | STGB30 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 258W | 600V | 53 ns | 600V | 1.85V | 59 ns | 600V | 60A | 225 ns | 400V, 30A, 10 Ω, 15V | 20V | 2.3V @ 15V, 30A | Trench Field Stop | 163nC | 120A | 45ns/189ns | 383μJ (on), 233μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IRG4BC30UPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bc30upbf-datasheets-2784.pdf | 600V | 23A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Contains Lead, Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | ULTRA FAST SWITCHING | No | 100W | Single | 100W | 1 | Insulated Gate BIP Transistors | 1.1nF | 17 ns | 9.6ns | 78 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 2.1V | 33 ns | 2.1V | 23A | 320 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.1V @ 15V, 12A | 50nC | 92A | 17ns/78ns | 160μJ (on), 200μJ (off) | 150ns | |||||||||||||||||||||||||||||
| RGPR30NS40HRTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/rohmsemiconductor-rgpr30ns40hrtl-datasheets-2513.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 17 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 125W | 430V | 30A | 300V, 8A, 100 Ω, 5V | 2.0V @ 5V, 10A | 22nC | 500ns/4μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT5B65M1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | TO-220-3 | 3 | 18 Weeks | yes | 83W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 83W | TO-220AB | 195 ns | 650V | 21 ns | 1.98V | 10A | 161 ns | 400V, 5A, 60 Ω, 15V | 1.98V @ 15V, 5A | 14nC | 15A | 8.5ns/106ns | 80μJ (on), 70μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| STGF30H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30h60df-datasheets-9802.pdf | TO-220-3 Full Pack | Lead Free | 3 | EAR99 | No | 37W | STGF30 | Single | 37W | Insulated Gate BIP Transistors | N-CHANNEL | 110 ns | 600V | 2.4V | 600V | 60A | 400V, 30A, 10 Ω, 15V | 20V | 2.4V @ 15V, 30A | Trench Field Stop | 105nC | 120A | 50ns/160ns | 350μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STGF17NC60SD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf17nc60sd-datasheets-2817.pdf | TO-220-3 Full Pack | not_compliant | e3 | Matte Tin (Sn) - annealed | 32W | STGF17 | Insulated Gate BIP Transistors | N-CHANNEL | 32W | 31 ns | 600V | 1.9V | 17A | 480V, 12A, 10 Ω, 15V | 20V | 6.2V | 1.9V @ 15V, 12A | 54.5nC | 80A | 17.5ns/175ns | 135μJ (on), 815μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60D3DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d3dpe00j3-datasheets-2819.pdf | SC-83 | Lead Free | 16 Weeks | 83 | No | 113W | RJH60D | 4 | Single | 35 ns | 80 ns | 113W | 600V | 100 ns | 600V | 600V | 35A | 300V, 17A, 5 Ω, 15V | 2.2V @ 15V, 17A | Trench | 37nC | 35ns/80ns | 200μJ (on), 210μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4IBC20KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/infineontechnologies-irg4ibc20kdpbf-datasheets-2821.pdf | 600V | 11.5A | TO-220-3 Full Pack | 10.67mm | 9.02mm | 4.826mm | Lead Free | 3 | 16 Weeks | 2.299997g | No SVHC | 3 | EAR99 | No | 34W | Single | 34W | 1 | Insulated Gate BIP Transistors | 34ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 37 ns | 600V | 2.8V | 88 ns | 2.8V | 11.5A | 380 ns | 480V, 9A, 50 Ω, 15V | 20V | 6V | 2.8V @ 15V, 9A | 34nC | 23A | 54ns/180ns | 340μJ (on), 300μJ (off) | 110ns | ||||||||||||||||||||||||||||||||
| STGD10NC60HDT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf10nc60hd-datasheets-5037.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | 62W | GULL WING | 260 | STGD10 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 62W | 600V | TO-252AA | 22 ns | 600V | 19 ns | 600V | 20A | 247 ns | 390V, 5A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 5A | 19.2nC | 30A | 14.2ns/72ns | 31.8μJ (on), 95μJ (off) | ||||||||||||||||||||||||||||||||||
| RGT50NS65DGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt50ns65dgtl-datasheets-2630.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 194W | 58ns | 65 ns | 650V | 48A | 210 ns | 400V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 49nC | 75A | 27ns/88ns | |||||||||||||||||||||||||||||||||||||||||||||||
| STGWT20H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgfw20h65fb-datasheets-5730.pdf | TO-3P-3, SC-65-3 | 32 Weeks | 6.756003g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 168W | NOT SPECIFIED | STGWT20 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 168W | 650V | 1.55V | 650V | 40A | 400V, 20A, 10 Ω, 15V | 20V | 7V | 2V @ 15V, 20A | Trench Field Stop | 120nC | 80A | 30ns/139ns | 77μJ (on), 170μJ (off) |
