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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Frequency | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Factory Lead Time | Weight | Number of Pins | Pbfree Code | Contact Plating | Radiation Hardening | Polarity | Max Power Dissipation | Voltage - Supply | Peak Reflow Temperature (Cel) | Base Part Number | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Supplier Device Package | Memory Size | Gain Bandwidth Product | Drain to Source Voltage (Vdss) | Continuous Collector Current | Power - Max | Max Breakdown Voltage | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| ULN2803APG,CN | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 2012 | 18-DIP (0.300, 7.62mm) | ULN280*A | 1.47W | 50V | 500mA | 8 NPN Darlington | 1000 @ 350mA 2V | 1.6V @ 500μA, 350mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1A01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-74, SOT-457 | 4 Weeks | 6 | PNP | 300mW | Dual | 80MHz | 300mW | 50V | 50V | 100mV | 300mV | 150mA | 50V | 5V | 120 | 100nA ICBO | 2 PNP (Dual) | 200 @ 2mA 6V | 300mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||
| 2SA1586-GR,LF | Toshiba Semiconductor and Storage | $0.12 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2015 | SC-70, SOT-323 | 12 Weeks | 6.208546mg | Silver, Tin | PNP | 100mW | Single | USM | 80MHz | 100mW | 50V | 50V | 100mV | 50V | 150mA | 50V | 150mA | 50V | 5V | 70 | 100nA ICBO | PNP | 200 @ 2mA 6V | 80MHz | 300mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||
| TMBT3906,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 320mW | 320mW | 50V | 50V | 400mV | 150mA | 100nA ICBO | PNP | 100 @ 10mA 1V | 250MHz | 400mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||
| 2SA1362-GR,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 200mW | 15V | 800mA | 100nA ICBO | PNP | 200 @ 100mA 1V | 120MHz | 200mV @ 8mA, 400mA | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1588-GR,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-70, SOT-323 | 12 Weeks | 6.208546mg | yes | 100mW | 200MHz | -500mA | 100mW | 30V | 30V | -250mV | 250mV | 500mA | -35V | -5V | 25 | 100nA ICBO | PNP | 200 @ 100mA 1V | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||
| 2SC2712-BL,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | NPN | 150mW | Single | S-Mini | 80MHz | 150mW | 100mV | 50V | 150mA | 50V | 150mA | 60V | 5V | 70 | 100nA ICBO | NPN | 70 @ 2mA 6V | 80MHz | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||
| TTC012(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2011 | /files/toshibasemiconductorandstorage-ttc012q-datasheets-4515.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 18 Weeks | 3 | No | 1.1W | 1.1W | 1 | 375V | 375V | 2A | 800V | 10μA ICBO | NPN | 100 @ 300mA 5V | 1V @ 62.5mA, 500mA | |||||||||||||||||||||||||||||||||||||||||
| 2SC3303-Y(T6L1,NQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 120MHz | RoHS Compliant | 2013 | /files/toshiba-2sc3303yt6l1nq-datasheets-9294.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | Silver, Tin | No | 1W | Single | 1W | 1 | 120MHz | 80V | 200mV | 80V | 5A | 100V | 7V | 70 | 1μA ICBO | NPN | 120 @ 1A 1V | 400mV @ 150mA, 3A | |||||||||||||||||||||||||||||||||||
| 2SA1425-Y,T2F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1425yt2fj-datasheets-0993.pdf | SC-71 | 1W | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1680,T6ASTIF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1680fm-datasheets-0995.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 120 @ 100mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1931,NETQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1931sinfqj-datasheets-1023.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 50V | 5A | 1μA ICBO | PNP | 100 @ 1A 1V | 60MHz | 400mV @ 200mA, 2A | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6TR,A,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-O(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-Y,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-O(FA1,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229(TE6SAN1F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229-O(T6SAN2FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y,T6USNF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3328-Y,HOF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3328ot6kehfm-datasheets-1163.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 80V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5201,T6MURAF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5201t6murafj-datasheets-1204.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 600V | 50mA | 1μA ICBO | NPN | 100 @ 20mA 5V | 1V @ 500mA, 20mA | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4793,YHF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4793fm-datasheets-6713.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | NPN | 100 @ 100mA 5V | 100MHz | 1.5V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3665-Y(T2NSW,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3665yt2ynsfj-datasheets-1189.pdf | SC-71 | 1W | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4881,LS1SUMIF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4881canofm-datasheets-1237.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 50V | 5A | 1μA ICBO | NPN | 100 @ 1A 1V | 100MHz | 400mV @ 125mA, 2.5A | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2406-Y(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | 8MHz | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2406yf-datasheets-0405.pdf | TO-220-3 Full Pack | Lead Free | 3 | NPN | 25W | Single | 25W | 1 | TO-220NIS | 8MHz | 25W | 80V | 1.5V | 4A | 80V | 4A | 80V | 5V | 30μA ICBO | NPN | 120 @ 500mA 5V | 8MHz | 1.5V @ 300mA, 3A | |||||||||||||||||||||||||||||||
| 2SD2206(T6CNO,A,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2206t6cnoaf-datasheets-6695.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 100V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2257(CANO,A,Q) | Toshiba Semiconductor and Storage | $0.74 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2257kehinqj-datasheets-6764.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 10μA ICBO | NPN | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||
| MQ01ABD100M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MQ01ABDxxx | 5°C~55°C | 100.45mmx69.85mmx9.50mm | Not Applicable | RoHS Compliant | 6 Weeks | 4.13oz 117g | 5V | 1TB | 2.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPN10GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Not Applicable | ROHS3 Compliant | 6 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N36TU,LF | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 500mW Ta | 2 N-Channel (Dual) | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | Logic Level Gate, 1.5V Drive |
