| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Base Part Number | Operating Temperature (Max) | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Gain | JESD-30 Code | Supplier Device Package | Noise Figure | Forward Current | Forward Voltage | Max Surge Current | Continuous Drain Current (ID) | Gain Bandwidth Product | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | FET Technology | Speed | Power - Output | Power - Max | Current Rating (Amps) | Max Breakdown Voltage | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Current - Test | Drain Current-Max (Abs) (ID) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | hFE Min | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Noise Figure (dB Typ @ f) | Frequency - Transition | Voltage - Test | Number of Drivers/Receivers | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CLH02(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh02te16rq-datasheets-2688.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 300V | 10μA @ 300V | 1.3V @ 3A | 3A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS03(TE16L,PCD,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls03te16rq-datasheets-2695.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 345pF @ 10V 1MHz | 60V | 1mA @ 60V | 0.58V @ 10A | 10A DC | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRG02(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2009 | SOD-123F | 2.6mm | 980μm | 1.6mm | 12 Weeks | 2 | Silver, Tin | Single | S-FLAT (1.6x3.5) | 700mA | 1.1V | 16.5A | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | 16.5A | 400V | Standard | 400V | 700mA | 400V | 10μA @ 400V | 1.1V @ 700mA | 700mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRG09(TE85L,Q,M) | Toshiba Semiconductor and Storage | $0.24 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2010 | SOD-123F | 2 | Single | 1A | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | 15A | Standard | 10μA @ 400V | 1.1V @ 700mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5085-O(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-70, SOT-323 | 16 Weeks | EAR99 | 100mW | Other Transistors | Single | NPN | 100mW | 12V | 12V | 80mA | 5000MHz | NPN | 80 @ 20mA 10V | 1dB @ 500MHz | 7GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3475TE12LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Cut Tape (CT) | 1 (Unlimited) | 20V | 520MHz | RoHS Compliant | 2007 | TO-243AA | 14.9dB | SC-62 | 630mW | 1A | 50mA | N-Channel | 7.2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3SK291(TE85L,F) | Toshiba Semiconductor and Storage | $8.88 |
Min: 1 Mult: 1 |
download | Cut Tape (CT) | 1 (Unlimited) | 800MHz | RoHS Compliant | 2009 | 30mA | SC-61AA | 52 Weeks | 4 | YES | 150mW | 125°C | FET General Purpose Powers | 22.5dB | 2.5dB | 30mA | Single | 12.5V | METAL-OXIDE SEMICONDUCTOR | 10mA | 0.03A | N-Channel Dual Gate | 6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TD62083AFG,N | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Surface Mount | Surface Mount | -40°C~85°C | Tube | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 2009 | 18-SOIC (0.276, 7.00mm Width) | 5V | 18-SOP | 8/0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TD62084AFG,N,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 2009 | 18-SOIC (0.276, 7.00mm Width) | 18 | 6V~15V | TD6208*A | 18-SOP | 8/0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B04FE-Y,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 6 | 12 Weeks | yes | 100mW | DUAL | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS | AMPLIFIER | NPN AND PNP | 100mW | 50V | 50V | 250mV | 150mA | 80MHz | 100nA ICBO | NPN, PNP | 120 @ 2mA 6V | 80MHz | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN2C01FEYTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-563, SOT-666 | NPN | 100mW | Dual | 60MHz | 100mW | 50V | 50V | 100mV | 250mV | 150mA | 60V | 5V | 120 | 100nA ICBO | 2 NPN (Dual) | 120 @ 2mA 6V | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN4A06J(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-hn4a06jte85lf-datasheets-4376.pdf | SC-74A, SOT-753 | PNP | 300mW | Dual | 100MHz | 300mW | 120V | 120V | -300mV | 300mV | 100mA | -120V | -5V | 200 | 100nA ICBO | 2 PNP (Dual) Matched Pair, Common Emitter | 200 @ 2mA 6V | 300mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C03FU-B,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 200mW | 20V | 300mA | 100nA ICBO | 2 NPN (Dual) | 350 @ 4mA 2V | 30MHz | 100mV @ 3mA, 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4117-BL,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SC-70, SOT-323 | 12 Weeks | 3 | Silver, Tin | 100mW | 100mW | 120V | 120V | 300mV | 100mA | 120V | 5V | 100nA ICBO | NPN | 200 @ 2mA 6V | 100MHz | 300mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1182-GR,LF | Toshiba Semiconductor and Storage | $0.26 |
Min: 1 Mult: 1 |
download | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 150mW | 30V | 500mA | 100nA ICBO | PNP | 200 @ 100mA 1V | 200MHz | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3325-O(TE85L,F) | Toshiba Semiconductor and Storage | $6.46 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 200mW | Other Transistors | Single | NPN | 200mW | 50V | 50V | 250mV | 500mA | 100nA ICBO | NPN | 70 @ 100mA 1V | 300MHz | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA2070(TE12L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2010 | TO-243AA | 4 | 1W | 1W | 1 | 50V | 200mV | 1A | 50V | 7V | 100nA ICBO | PNP | 200 @ 100mA 2V | 200mV @ 10mA, 300mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1162-Y,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2006 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 7.994566mg | yes | 150mW | Single | 80MHz | 150mW | 50V | 50V | 100mV | 50V | 150mA | 50V | 5V | 70 | 100μA ICBO | PNP | 120 @ 2mA 6V | 300mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5242-O(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 30MHz | RoHS Compliant | 2011 | 230V | 15A | TO-3P-3, SC-65-3 | Lead Free | 3 | 16 Weeks | 3 | No | 130W | 2SC5242 | Single | 130W | 1 | Other Transistors | 30MHz | SILICON | COLLECTOR | AMPLIFIER | NPN | 230V | 400mV | 230V | 15A | 30MHz | 230V | 5V | 80 | 5μA ICBO | NPN | 80 @ 1A 5V | 3V @ 800mA, 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6CANOFM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1428-O,T2CLAF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1428ot2clafm-datasheets-1005.pdf | SC-71 | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1837(PAIO,F,M) | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1837fm-datasheets-6654.pdf | TO-220-3 Full Pack | 2W | 230V | 1A | 1μA ICBO | PNP | 100 @ 100mA 5V | 70MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA949-Y,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa949yte6fm-datasheets-1022.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | PNP | 70 @ 10mA 5V | 120MHz | 800mV @ 1mA, 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6ND1,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA949-Y,ONK-1F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa949yte6fm-datasheets-1022.pdf | TO-226-3, TO-92-3 Long Body | 800mW | 150V | 50mA | 100nA ICBO | PNP | 70 @ 10mA 5V | 120MHz | 800mV @ 1mA, 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-Y(T6CANO,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229-Y(T6MITIFM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y(T6CANOFM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2655-Y(HIT,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-Y(F,M) | Toshiba Semiconductor and Storage | $4.85 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA |
Please send RFQ , we will respond immediately.