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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7121DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7121dnt1ge3-datasheets-5243.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 44 ns | 100ns | 15 ns | 28 ns | -16A | 25V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -3V | 3.7W Ta 52W Tc | 50A | 20 mJ | -30V | P-Channel | 1960pF @ 15V | -3 V | 18m Ω @ 10A, 10V | 3V @ 250μA | 16A Tc | 65nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||
| SI7892BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7892bdpt1ge3-datasheets-7461.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4.2mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 20 ns | 20ns | 35 ns | 62 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 1.8W Ta | 60A | N-Channel | 3775pF @ 15V | 1 V | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SIUD402ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2018 | /files/vishaysiliconix-siud402edt1ge3-datasheets-7489.pdf | PowerPAK® 0806 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 20V | 1.25W Ta | N-Channel | 16pF @ 10V | 730m Ω @ 200mA, 4.5V | 900mV @ 250μA | 1A Ta | 1.2nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4122DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4122dyt1ge3-datasheets-9040.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.5MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 3W | 1 | FET General Purpose Power | 42 ns | 34ns | 28 ns | 45 ns | 27.2A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5V | 3W Ta 6W Tc | 225 pF | 40V | N-Channel | 4200pF @ 20V | 4.5m Ω @ 15A, 10V | 2.5V @ 250μA | 27.2A Tc | 95nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||
| SQM50P03-07_GE3 | Vishay Siliconix | $2.15 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50p0307ge3-datasheets-9824.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 30V | 150W Tc | P-Channel | 5380pF @ 25V | 7mOhm @ 30A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR430ATR-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 500V | 110W Tc | N-Channel | 490pF @ 25V | 1.7Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ460AEP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj460aept2ge3-datasheets-2116.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 60V | 68W Tc | N-Channel | 2654pF @ 30V | 8.7mOhm @ 10.7A, 10V | 2.5V @ 250μA | 58A Tc | 106nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS862DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis862dnt1ge3-datasheets-7463.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 14 Weeks | Unknown | 8 | No | 1 | Single | 52W | 150°C | PowerPAK® 1212-8 | 1.32nF | 23 ns | 5ns | 5 ns | 15 ns | 40A | 20V | 60V | 2.6V | 3.7W Ta 52W Tc | 7mOhm | 60V | N-Channel | 1320pF @ 30V | 8.5mOhm @ 20A, 10V | 2.6V @ 250μA | 40A Tc | 32nC @ 10V | 8.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIS126DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis126dnt1ge3-datasheets-8404.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 80V | 3.7W Ta 52W Tc | N-Channel | 1402pF @ 40V | 10.2mOhm @ 10A, 10V | 3.5V @ 250μA | 12A Ta 45.1A Tc | 32nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS63DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss63dnt1ge3-datasheets-8464.pdf | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 20V | 5W Ta 65.8W Tc | P-Channel | 7080pF @ 10V | 2.7mOhm @ 15A, 10V | 1.5V @ 250μA | 35.1A Ta 127.5A Tc | 236nC @ 8V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA54DP-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira54dpt1ge3-datasheets-9122.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 36.7W Tc | N-Channel | 5300pF @ 20V | 2.35mOhm @ 15A, 10V | 2.3V @ 250μA | 60A Tc | 48nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF530STRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 88W Tc | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7230DN-T1-GE3 | Vishay Siliconix | $0.25 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7230dnt1e3-datasheets-3689.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3V | 1.5W Ta | 9A | 40A | N-Channel | 12m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFB13N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb13n50apbf-datasheets-1142.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | No SVHC | 450mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 1.91nF | 15 ns | 39ns | 31 ns | 39 ns | 14A | 30V | 500V | 500V | 4V | 250W Tc | 450mOhm | 500V | N-Channel | 1910pF @ 25V | 4 V | 450mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 81nC @ 10V | 450 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SI4430BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4430bdyt1ge3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.5mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | 20 ns | 14ns | 14 ns | 60 ns | 14A | 20V | SILICON | 30V | 30V | 1V | 1.6W Ta | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIHG20N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg20n50ege3-datasheets-2609.pdf | TO-247-3 | 3 | 18 Weeks | Unknown | 160mOhm | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 17 ns | 27ns | 25 ns | 48 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 4V | 179W Tc | TO-247AC | 42A | 204 mJ | 500V | N-Channel | 1640pF @ 100V | 184m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SQA401EEJ-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa401eejt1ge3-datasheets-3008.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 20V | 13.6W Tc | P-Channel | 375pF @ 10V | 113mOhm @ 2A, 4.5V | 1.5V @ 250μA | 2.68A Tc | 5.3nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR1N60ATR-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 600V | 36W Tc | N-Channel | 229pF @ 25V | 7Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU3N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihu3n50dge3-datasheets-3951.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 13 Weeks | 329.988449mg | 3 | No | 1 | Single | 1 | 12 ns | 9ns | 13 ns | 11 ns | 3A | 5V | SILICON | DRAIN | SWITCHING | 500V | 500V | 69W Tc | 3A | 5.5A | N-Channel | 175pF @ 100V | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SI3465DV-T1-GE3 | Vishay Siliconix | $1.64 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3465dvt1ge3-datasheets-5048.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 15 Weeks | 6 | unknown | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1.14W | 1 | 3A | 20V | SILICON | SWITCHING | 1.14W Ta | 3A | 0.08Ohm | 20V | P-Channel | 80m Ω @ 4A, 10V | 3V @ 250μA | 3A Ta | 5.5nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR9120-GE3 | Vishay Siliconix | $0.65 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-PAK (TO-252AA) | 100V | 2.5W Ta 42W Tc | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3467DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3467dvt1e3-datasheets-7206.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 21 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1 | Other Transistors | 10 ns | 15ns | 15 ns | 22 ns | -5A | 20V | SILICON | SWITCHING | 1.14W Ta | 3.8A | 0.054Ohm | P-Channel | 54m Ω @ 5A, 10V | 3V @ 250μA | 3.8A Ta | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF830LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 12 Weeks | 6.000006g | 1.5Ohm | 3 | yes | No | 1 | Single | 1 | 8.2 ns | 16ns | 16 ns | 42 ns | 11A | 30V | SILICON | DRAIN | 3.1W Ta 74W Tc | TO-220AB | 4.5A | 500V | N-Channel | 610pF @ 25V | 1.5 Ω @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4456DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4456dyt1e3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.5W | 1 | FET General Purpose Power | 3.3A | 20V | SILICON | 40V | 40V | 3.5W Ta 7.8W Tc | 23A | 70A | N-Channel | 5670pF @ 20V | 2.8 V | 3.8m Ω @ 20A, 10V | 2.8V @ 250μA | 33A Tc | 122nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHP14N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihp14n50de3-datasheets-5260.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 208W | 1 | 16 ns | 27ns | 26 ns | 29 ns | 14A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 208W Tc | TO-220AB | 0.4Ohm | 56 mJ | N-Channel | 1144pF @ 100V | 400m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SIS430DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis430dnt1ge3-datasheets-0263.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.8W | 1 | FET General Purpose Power | 20 ns | 12ns | 10 ns | 25 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 52W Tc | 60A | 45 mJ | 25V | N-Channel | 1600pF @ 12.5V | 5.1m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFR224TRLPBF | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 2.5W Ta 42W Tc | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF610LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 11 Weeks | 6.000006g | 3 | yes | EAR99 | No | 1 | Single | 1 | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | SILICON | DRAIN | 200V | 200V | 3W Ta 36W Tc | TO-220AB | N-Channel | 140pF @ 25V | 1.5 Ω @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF740STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 11 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 400V | 400V | 3.1W Ta 125W Tc | 40A | 0.55Ohm | 520 mJ | N-Channel | 1400pF @ 25V | 550m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SUM60030E-GE3 | Vishay Siliconix | $6.71 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum60030ege3-datasheets-2809.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 375W Tc | 250A | 0.0032Ohm | 245 mJ | N-Channel | 7910pF @ 40V | 3.2m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 141nC @ 10V | 7.5V 10V | ±20V |
