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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7629DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7629dnt1ge3-datasheets-1286.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | 4.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 21.3A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 3.7W Ta 52W Tc | 35A | 20 mJ | P-Channel | 5790pF @ 10V | 4.6m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 177nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SUM70040E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sum70040ege3-datasheets-6464.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | Unknown | 3 | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 4V | 375W Tc | 480A | 0.004Ohm | 266 mJ | N-Channel | 5100pF @ 50V | 4m Ω @ 20A, 10V | 4V @ 250μA | 120A Tc | 120nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4164DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4164dyt1ge3-datasheets-2194.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 3.2MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 3W | 1 | 35 ns | 16ns | 16 ns | 48 ns | 30A | 20V | SILICON | SWITCHING | 30V | 30V | 2.5V | 3W Ta 6W Tc | N-Channel | 3545pF @ 15V | 3.2m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHH14N60E-T1-GE3 | Vishay Siliconix | $4.24 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh14n60et1ge3-datasheets-7048.pdf | 8-PowerTDFN | Lead Free | 4 | 18 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 147W Tc | 0.255Ohm | 173 mJ | N-Channel | 1416pF @ 100V | 255m Ω @ 7A, 10V | 4V @ 250μA | 16A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2306BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2306bdst1e3-datasheets-3482.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 47MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 7 ns | 12ns | 12 ns | 14 ns | 4A | 20V | SILICON | 30V | 3V | 750mW Ta | N-Channel | 305pF @ 15V | 47m Ω @ 3.5A, 10V | 3V @ 250μA | 3.16A Ta | 4.5nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQJ401EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/vishaysiliconix-sqj401ept1ge3-datasheets-2735.pdf | PowerPAK® SO-8 | 12 Weeks | 5 | No | 83W | 1 | PowerPAK® SO-8 | 43 ns | 63ns | 166 ns | 263 ns | 32A | 8V | 12V | 83W Tc | P-Channel | 10015pF @ 6V | 6mOhm @ 15A, 4.5V | 1.5V @ 250μA | 32A Tc | 164nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR638DP-T1-GE3 | Vishay Siliconix | $1.59 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr638dpt1ge3-datasheets-3409.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 125W Tc | N-Channel | 10500pF @ 20V | 0.88m Ω @ 20A, 10V | 2.3V @ 250μA | 100A Tc | 204nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM70060EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm70060elge3-datasheets-3982.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 166W Tc | 67A | 180A | 0.0059Ohm | 180 mJ | N-Channel | 5500pF @ 25V | 5.9m Ω @ 30A, 10V | 2.5V @ 250μA | 75A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9520PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf9520pbf-datasheets-8466.pdf | -100V | -6.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 600mOhm | 3 | No | 1 | Single | 60W | 1 | TO-220AB | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | -6.8A | 20V | 100V | -4V | 60W Tc | 200 ns | 600mOhm | -100V | P-Channel | 390pF @ 25V | -2 V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI2305CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2305cdst1ge3-datasheets-9390.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 35mOhm | 3 | yes | EAR99 | No | 58A | e3 | Matte Tin (Sn) | 8V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 960mW | 1 | Other Transistors | 150°C | 20 ns | 20ns | 20 ns | 40 ns | -4.4A | 8V | SILICON | SWITCHING | -400mV | 960mW Ta 1.7W Tc | -8V | P-Channel | 960pF @ 4V | 35m Ω @ 4.4A, 4.5V | 1V @ 250μA | 5.8A Tc | 30nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SQ2361AEES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2361aeest1ge3-datasheets-0653.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 12 Weeks | 2 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 175°C | R-PDSO-G3 | 9 ns | 9ns | 4 ns | 24 ns | -2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 2W Tc | 45 pF | -60V | P-Channel | 620pF @ 30V | 170m Ω @ 2.4A, 10V | 2.5V @ 250μA | 2.8A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4823DY-T1-GE3 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4823dyt1ge3-datasheets-0720.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.7W | 1 | 18 ns | 40ns | 10 ns | 18 ns | 3.3A | 12V | SILICON | 20V | 1.7W Ta 2.8W Tc | -20V | P-Channel | 660pF @ 10V | 108m Ω @ 3.3A, 4.5V | 1.5V @ 250μA | 4.1A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IRF9Z30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf9z30pbf-datasheets-1976.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 140mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | 3 | 1 | Single | 74W | 1 | 12 ns | 110ns | 64 ns | 21 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 50V | -4V | 74W Tc | TO-220AB | 60A | -50V | P-Channel | 900pF @ 25V | 140m Ω @ 9.3A, 10V | 4V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFR014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/vishaysiliconix-irfr014trlpbf-datasheets-8479.pdf | 60V | 7.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 25W | 1 | D-Pak | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 7.7A | 20V | 60V | 4V | 2.5W Ta 25W Tc | 140 ns | 200mOhm | 60V | N-Channel | 300pF @ 25V | 200mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUA70060E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sua70060ee3-datasheets-3443.pdf | TO-220-3 Full Pack | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100V | 39W Tc | N-Channel | 3300pF @ 50V | 6.1m Ω @ 30A, 10V | 4V @ 250μA | 56.6A Tc | 81nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90220E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90220ege3-datasheets-4113.pdf | TO-220-3 | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 30 | 200V | 230W Tc | 18mOhm | N-Channel | 1950pF @ 100V | 4V @ 250μA | 64A Tc | 48nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM200N04-1M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqm200n041m7lge3-datasheets-4508.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | 12 Weeks | 1.59999g | Unknown | 7 | EAR99 | No | GULL WING | 1 | Single | 1 | R-PSSO-G6 | 22 ns | 17ns | 16 ns | 70 ns | 200A | 20V | SILICON | 40V | 40V | 2V | 375W Tc | 600A | N-Channel | 11168pF @ 20V | 1.7m Ω @ 30A, 10V | 2.5V @ 250μA | 200A Tc | 291nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | TO-263 (D2Pak) | 600V | 147W Tc | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF6N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihf6n65ege3-datasheets-5252.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | Tin | NOT SPECIFIED | Single | NOT SPECIFIED | 31W | 1 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 7A | 0.6Ohm | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI8447DB-T2-E1 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8447dbt2e1-datasheets-5723.pdf | 6-UFBGA | 6 | 75mOhm | yes | EAR99 | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 6 | 30 | 2.77W | 1 | Other Transistors | Not Qualified | R-PBGA-B6 | 10ns | 15 ns | 30 ns | 11A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 5.1A | 15A | -20V | P-Channel | 600pF @ 10V | 75m Ω @ 1A, 4.5V | 1.2V @ 250μA | 11A Tc | 25nC @ 10V | 1.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRF740APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf740apbf-datasheets-8854.pdf | 400V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | No SVHC | 550mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 4V | 125W Tc | 550mOhm | 400V | N-Channel | 1030pF @ 25V | 4 V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIR632DP-T1-RE3 | Vishay Siliconix | $1.14 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir632dpt1re3-datasheets-0172.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 150V | 69.5W Tc | N-Channel | 740pF @ 75V | 34.5m Ω @ 10A, 10V | 4V @ 250μA | 29A Tc | 17nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR626ADP-T1-RE3 | Vishay Siliconix | $1.51 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir626adpt1re3-datasheets-1155.pdf | PowerPAK® SO-8 | PowerPAK® SO-8 | 60V | 6.25W Ta 104W Tc | N-Channel | 3770pF @ 30V | 1.75mOhm @ 20A, 10V | 3.5V @ 250μA | 40.4A Ta 165A Tc | 83nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP24N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp24n80aege3-datasheets-1648.pdf | TO-220-3 | TO-220AB | 800V | 208W Tc | N-Channel | 1836pF @ 100V | 184mOhm @ 10A, 10V | 4V @ 250μA | 21A Tc | 89nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60EF-GE3 | Vishay Siliconix | $2.86 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60efge3-datasheets-2059.pdf | TO-220-3 Full Pack | 17 Weeks | TO-220 Full Pack | 600V | 33W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD20N10-66L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-sud20n1066lge3-datasheets-3204.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.1W Ta 41.7W Tc | TO-252AA | 16.9A | 25A | 0.066Ohm | 11.25 mJ | N-Channel | 860pF @ 50V | 66m Ω @ 6.6A, 10V | 3V @ 250μA | 16.9A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQ3460EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq3460evt1ge3-datasheets-4067.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | 6-TSOP | 20V | 3.6W Tc | N-Channel | 1060pF @ 10V | 30mOhm @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 14nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ872EP-T1_GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj872ept1ge3-datasheets-4995.pdf | 8-PowerTDFN | 12 Weeks | PowerPAK® SO-8 | 150V | 55W Tc | N-Channel | 1045pF @ 25V | 35.5mOhm @ 10A, 10V | 3.5V @ 250μA | 24.5A Tc | 22nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4477DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4477dyt1ge3-datasheets-5940.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 8 | EAR99 | Tin | No | DUAL | GULL WING | 8 | 1 | 3W | 1 | 42 ns | 42ns | 42 ns | 100 ns | -26.6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -1.5V | 3W Ta 6.6W Tc | 0.0062Ohm | -20V | P-Channel | 4600pF @ 10V | 6.2m Ω @ 18A, 4.5V | 1.5V @ 250μA | 26.6A Tc | 190nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SIHP105N60EF-GE3 | Vishay Siliconix | $4.32 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp105n60efge3-datasheets-6928.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 208W Tc | N-Channel | 1804pF @ 100V | 102mOhm @ 13A, 10V | 5V @ 250μA | 29A Tc | 53nC @ 10V | 10V | ±30V |
