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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFBC40PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfbc40pbf-datasheets-2495.pdf | 600V | 6.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 1.2Ohm | 3 | Tin | 62A | 600V | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 4V | 125W Tc | 940 ns | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFI620GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfi620gpbf-datasheets-3357.pdf | 200V | 4.1A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | No SVHC | 800mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | 3 | 1 | Single | 30W | 1 | 2.5kV | 7.2 ns | 22ns | 13 ns | 19 ns | 4.1A | 20V | 200V | SILICON | SWITCHING | 4V | 30W Tc | TO-220AB | 300 ns | 200V | N-Channel | 260pF @ 25V | 4 V | 800m Ω @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFI644GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi644gpbf-datasheets-3902.pdf | 250V | 7.9A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 11 ns | 24ns | 24 ns | 53 ns | 7.9A | 20V | 250V | 4V | 40W Tc | 500 ns | 280mOhm | 250V | N-Channel | 1300pF @ 25V | 4 V | 280mOhm @ 4.7A, 10V | 4V @ 250μA | 7.9A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQM50N04-4M1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqm50n044m1ge3-datasheets-4259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 1.946308g | Unknown | 3 | No | 1 | Single | TO-263 (D2Pak) | 6.715nF | 12 ns | 5ns | 9 ns | 35 ns | 50A | 20V | 40V | 3V | 150W Tc | 4.1mOhm | N-Channel | 6715pF @ 25V | 4.1mOhm @ 30A, 10V | 3.5V @ 250μA | 50A Tc | 105nC @ 10V | 4.1 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N60ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 600V | 147W Tc | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-06_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n0606ge3-datasheets-5221.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 175W Tc | N-Channel | 6495pF @ 25V | 6mOhm @ 30A, 10V | 3.5V @ 250μA | 119A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB6N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb6n65ege3-datasheets-5579.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | Unknown | 600mOhm | 3 | yes | No | GULL WING | Single | 78W | 1 | R-PSSO-G2 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | SWITCHING | 2V | 78W Tc | 7A | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQM40031EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm40031elge3-datasheets-8739.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 2 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 21 ns | 250 ns | -120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 375W Tc | 300A | 0.003Ohm | -40V | P-Channel | 39000pF @ 25V | 3m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 800nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQ4080EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq4080eyt1ge3-datasheets-0060.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | unknown | YES | DUAL | GULL WING | 1 | 7.1W | 1 | 175°C | R-PDSO-G8 | 11.4 ns | 19.1 ns | 18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 7.1W Tc | 0.085Ohm | 55 pF | 150V | N-Channel | 1590pF @ 75V | 85m Ω @ 10A, 10V | 4V @ 250μA | 18A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | 180mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | GULL WING | 260 | 4 | 1 | Single | 40 | 130W | 1 | R-PSSO-G2 | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 130W Tc | 72A | 580 mJ | 200V | N-Channel | 1300pF @ 25V | 180m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHA690N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha690n60ege3-datasheets-1610.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 600V | 29W Tc | N-Channel | 347pF @ 100V | 700mOhm @ 2A, 10V | 5V @ 250μA | 4.3A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP186N60EF-GE3 | Vishay Siliconix | $3.05 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp186n60efge3-datasheets-2015.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 156W Tc | N-Channel | 1081pF @ 100V | 193mOhm @ 9.5A, 10V | 5V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4812BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4812bdyt1e3-datasheets-2638.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | 186.993455mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1.4W | 1 | FET General Purpose Power | 15 ns | 13ns | 8 ns | 20 ns | 7.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 1V | 1.4W Ta | N-Channel | 16m Ω @ 9.5A, 10V | 3V @ 250μA | 7.3A Ta | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFR420TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 12 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 24A | 500V | 1 | Single | 2.5W | 1 | D-Pak | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | 500V | 4V | 2.5W Ta 42W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 2 V | 3Ohm @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4866BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4866bdyt1ge3-datasheets-4881.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 186.993455mg | Unknown | 5.3mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 150°C | 13 ns | 12ns | 9 ns | 57 ns | 16.1A | 8V | SILICON | SWITCHING | 1V | 2.5W Ta 4.45W Tc | 12V | N-Channel | 5020pF @ 6V | 5.3m Ω @ 12A, 4.5V | 1V @ 250μA | 21.5A Tc | 80nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| IRFR224TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.1Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 4V | 2.5W Ta 42W Tc | 1.1Ohm | N-Channel | 260pF @ 25V | 2 V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7615DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7615dnt1ge3-datasheets-6777.pdf | PowerPAK® 1212-8 | 3.3mm | 3.3mm | Lead Free | 5 | 14 Weeks | 3.9MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 35 ns | 38ns | 28 ns | 80 ns | -35A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 3.7W Ta 52W Tc | 22.6A | 20 mJ | -20V | P-Channel | 6000pF @ 10V | 3.9m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 183nC @ 10V | 6V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| SQM40081EL_GE3 | Vishay Siliconix | $1.37 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40081elge3-datasheets-8036.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 40V | 107W Tc | P-Channel | 9950pF @ 25V | 8.5mOhm @ 25A, 10V | 2.5V @ 250μA | 50A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50034E_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50034ege3-datasheets-9311.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 150W Tc | N-Channel | 6600pF @ 25V | 3.9mOhm @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf730spbf-datasheets-3742.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 12 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 74W Tc | 22A | 1Ohm | 290 mJ | 400V | N-Channel | 700pF @ 25V | 1 Ω @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIR618DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir618dpt1ge3-datasheets-1367.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | 48W Tc | N-Channel | 740pF @ 100V | 95mOhm @ 8A, 10V | 4V @ 250μA | 14.2A Tc | 16nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS413DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis413dnt1ge3-datasheets-6716.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | No SVHC | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | 150°C | S-PDSO-C5 | 11 ns | 11ns | 8 ns | 45 ns | -14.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.7W Ta 52W Tc | 70A | 0.0094Ohm | 20 mJ | -30V | P-Channel | 4280pF @ 15V | 9.4m Ω @ 15A, 10V | 2.5V @ 250μA | 18A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SISHA14DN-T1-GE3 | Vishay Siliconix | $0.51 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisha14dnt1ge3-datasheets-8025.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.57W Ta 26.5W Tc | N-Channel | 1450pF @ 15V | 5.1mOhm @ 10A, 10V | 2.2V @ 250μA | 19.7A Ta 20A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS22LDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss22ldnt1ge3-datasheets-8625.pdf | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 60V | 5W Ta 65.7W Tc | N-Channel | 2540pF @ 30V | 3.65mOhm @ 15A, 10V | 2.5V @ 250μA | 25.5A Ta 92.5A Tc | 56nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ188DP-T1-GE3 | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij188dpt1ge3-datasheets-8902.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5W Ta 65.7W Tc | N-Channel | 1920pF @ 30V | 3.85mOhm @ 10A, 10V | 3.6V @ 250μA | 25.5A Ta 92.4A Tc | 44nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA46EP-T1_GE3 | Vishay Siliconix | $61.88 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja46ept1ge3-datasheets-9363.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | N-Channel | 5000pF @ 25V | 3mOhm @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD214PBF | Vishay Siliconix | $0.27 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd214pbf-datasheets-0387.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4 | No | Single | 1W | 4-DIP, Hexdip, HVMDIP | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 450mA | 20V | 250V | 1W Ta | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2Ohm @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | 2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishay-irfbf20spbf-datasheets-6251.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 8Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 4V | 3.1W Ta 54W Tc | 8Ohm | N-Channel | 490pF @ 25V | 4 V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFP054PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfp054pbf-datasheets-1299.pdf | 60V | 70A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 8 Weeks | 38.000013g | 14mOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 230W | 1 | 20 ns | 160ns | 150 ns | 83 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 540 ns | 60V | N-Channel | 4500pF @ 25V | 14m Ω @ 54A, 10V | 4V @ 250μA | 70A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHU4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu4n80aege3-datasheets-1544.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 8.5mm | 18 Weeks | 1 | 69W | 150°C | IPAK (TO-251) | 12 ns | 26 ns | 4.3A | 30V | 800V | 69W Tc | 1.1Ohm | 800V | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V |
