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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Interface IC Type | Output Voltage | Output Current | Output Type | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | On-State Resistance | High Level Output Current | Threshold Voltage | Output Configuration | Power - Max | Input Voltage-Nom | Input Voltage (Min) | Input Voltage (Max) | High Side Driver | Topology | Synchronous Rectifier | Max Duty Cycle | Clock Sync | Duty Cycle | Number of Inputs | Output | Control Mode | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Control Features | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI5511DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5511dct1e3-datasheets-4605.pdf | 8-SMD, Flat Lead | 84.99187mg | 8 | 1.3W | SI5511 | 2 | 2 | 1206-8 ChipFET™ | 435pF | 15 ns | 78ns | 65 ns | 33 ns | 4A | 12V | 30V | 3.1W 2.6W | 150mOhm | 30V | N and P-Channel | 435pF @ 15V | 55mOhm @ 4.8A, 4.5V | 2V @ 250μA | 4A 3.6A | 7.1nC @ 5V | Logic Level Gate | 55 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9112DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BCDMOS | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9112dyt1e3-datasheets-9812.pdf | 14-SOIC (0.154, 3.90mm Width) | 8.65mm | 3.9mm | 14 | 338.011364mg | 14 | yes | EAR99 | 3MHz | e3 | Matte Tin (Sn) | 15V | DUAL | GULL WING | 260 | SI9112 | SWITCHING CONTROLLER | 40 | Switching Regulator or Controllers | 8.7V | 10mA | Transistor Driver | 40ns | 40 ns | Step-Up/Step-Down | 1 | Positive | 12V | Cuk, Flyback, Forward Converter, Push-Pull | No | 50 % | 50 % | CURRENT-MODE | PULSE WIDTH MODULATION | SINGLE | Enable, Reset | 9V~13.5V | 40kHz~1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5943DU-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5943dut1e3-datasheets-4651.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 2.3W | SI5943 | 2 | Dual | PowerPAK® ChipFet Dual | 460pF | 5 ns | 15ns | 7 ns | 23 ns | 6A | 8V | 12V | 8.3W | 64mOhm | -12V | 2 P-Channel (Dual) | 460pF @ 6V | 64mOhm @ 3.6A, 4.5V | 1V @ 250μA | 6A | 15nC @ 8V | Logic Level Gate | 64 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP11205DQP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sip11205dlpt1e3-datasheets-9854.pdf | 16-TSSOP (0.173, 4.40mm Width) Exposed Pad | 16 | EAR99 | 1MHz | YES | DUAL | GULL WING | 12V | SIP11205 | BUFFER OR INVERTER BASED MOSFET DRIVER | Transistor Driver | Step-Up/Step-Down | 1 | Positive, Isolation Capable | YES | Forward Converter | Yes | 47 % | No | Enable, Frequency Control, Soft Start | 10.5V~13.2V | 100kHz~500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7842DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7842dpt1e3-datasheets-4743.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | Unknown | 22mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7842 | 8 | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 6.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 30A | 30V | 2 N-Channel (Dual) | 800 mV | 22m Ω @ 7.5A, 10V | 2.4V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG508BEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg508bent1ge4-datasheets-3833.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 12V | Lead Free | 16 | 12 Weeks | Unknown | 20V | 5V | 380Ohm | 16 | yes | No | 1 | 6mA | 525mW | QUAD | 260 | 15V | 0.4mm | 16 | 8 | Single | 40 | Multiplexer or Switches | 1 | 250MHz | 20V | 5V | -15V | 380Ohm | 81 dB | 10Ohm | BREAK-BEFORE-MAKE | 300ns | 340ns | 0.03A | 8:1 | ±5V~20V | 1nA | 3pF 13pF | 250ns, 240ns | 2pC | 10 Ω | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7960DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7960dpt1e3-datasheets-4788.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7960 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 12ns | 12 ns | 60 ns | 9.7A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3V | 40A | 2 N-Channel (Dual) | 21m Ω @ 9.7A, 10V | 3V @ 250μA | 6.2A | 75nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 14 Weeks | 540.001716mg | 36V | 13V | 40Ohm | 8 | yes | unknown | 1 | 100pA | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG417 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | Not Qualified | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NO | 12V ±15V | 1:1 | SPST - NC | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5519DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5519dut1ge3-datasheets-5417.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 8 | 2.27W | SI5519 | 2 | 2.27W | 2 | PowerPAK® ChipFet Dual | 660pF | 4.5 ns | 11ns | 8.5 ns | 25 ns | 6A | 12V | 20V | 10.4W | 64mOhm | N and P-Channel | 660pF @ 10V | 36mOhm @ 6.1A, 4.5V | 1.8V @ 250μA | 6A | 17.5nC @ 10V | Standard | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ADJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 200μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | Lead Free | 200μA | 20 | 10 Weeks | 2.508989g | 40V | 5V | 75Ohm | 20 | yes | No | 4 | 200μA | e3 | MATTE TIN | 890mW | 15V | DG333 | 20 | 4 | 890mW | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | -15V | 8 | 45Ohm | 72 dB | 2Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA914DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia914djt1e3-datasheets-4841.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 53mOhm | 6 | yes | EAR99 | No | 6.5W | 260 | SIA914 | 6 | Dual | 40 | 1.9W | 2 | 5 ns | 32ns | 53 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 20V | 2 N-Channel (Dual) | 400pF @ 10V | 1 V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 11.5nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG470EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 3μA | ROHS3 Compliant | /files/vishaysiliconix-dg470eyt1e3-datasheets-7560.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | Lead Free | 6μA | 8 | 12 Weeks | 139.989945mg | 36V | 12V | 8Ohm | 8 | yes | unknown | 1 | 3μA | e3 | MATTE TIN | 320mW | GULL WING | 260 | 15V | 0.65mm | DG470 | 8 | 1 | 40 | 320mW | Multiplexer or Switches | Not Qualified | 166 ns | 108 ns | 22V | 15V | Dual, Single | 4.5V | -15V | 2 | 1 | 6Ohm | 57 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±4.5V~15V | 500pA | 37pF 85pF | 166ns, 108ns | 58pC | 120m Ω | -63dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ720DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz720dtt1ge3-datasheets-9632.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 14 Weeks | 6 | EAR99 | No | e3 | MATTE TIN | 48W | 260 | 2 | Dual | 40 | 4.6W | 16A | 20V | 27W 48W | 2 N-Channel (Half Bridge) | 825pF @ 10V | 2 V | 8.7m Ω @ 16.8A, 10V | 2V @ 250μA | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2001 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 50μA | 16 | 15 Weeks | 172.98879mg | Unknown | 25V | 4.5V | 160Ohm | 16 | yes | No | 4 | 50μA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 0.65mm | DG201 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 12/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1539DDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-si1539ddlt1ge3-datasheets-1271.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 340mW | 0.7A | 0.388Ohm | 888 pF | N and P-Channel | 28pF @ 15V 21pF @ 15V | 388m Ω @ 600mA, 10V, 1.07 Ω @ 400mA, 10V | 2.5V @ 250μA, 3V @ 250μA | 700mA Tc 460mA Tc | 1.1nC @ 4.5V, 1.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG451EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 5μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 500nA | 16 | 15 Weeks | 172.98879mg | No SVHC | 36V | 12V | 5.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | e3 | MATTE TIN | 450mW | GULL WING | 260 | 5V | 0.65mm | DG451 | 16 | 1 | 40 | 450mW | Multiplexer or Switches | 4 | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 4Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | NC | 1:1 | SPST - NC | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1988DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si1988dht1e3-datasheets-4376.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.25W | GULL WING | 260 | SI1988 | 6 | 30 | 2 | 8 ns | 20ns | 10 ns | 15 ns | 1.3A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 110pF @ 10V | 168m Ω @ 1.4A, 4.5V | 1V @ 250μA | 4.1nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1413EEQ-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg1412eent1ge4-datasheets-9047.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | unknown | 4 | YES | DUAL | GULL WING | 5V | 0.65mm | 1 | 4 | R-PDSO-G16 | 150MHz | -5V | -16.5V | 16.5V | 1.5Ohm | 78 dB | 0.04Ohm | BREAK-BEFORE-MAKE | 280ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO/NC | 500pA | 24pF 23pF | 140ns, 110ns | -41pC | 40m Ω | -104dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4910DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4910dyt1e3-datasheets-4516.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4910 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 60ns | 5 ns | 22 ns | 6A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 3.1W | 65 pF | 40V | 2 N-Channel (Dual) | 855pF @ 20V | 27m Ω @ 6A, 10V | 2V @ 250μA | 7.6A | 32nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg444dyt1e3-datasheets-1287.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 1μA | 16 | 12 Weeks | 1.627801g | Unknown | 36V | 13V | 160Ohm | 16 | yes | No | 4 | 1μA | e3 | Matte Tin (Sn) | 450mW | 15V | DG444 | 16 | 1 | 450mW | Multiplexer or Switches | 512/+-15V | SPST | 250 ns | 140 ns | 22V | 20V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 60 dB | BREAK-BEFORE-MAKE | NC | 5V~36V ±5V~20V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 250ns, 140ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9934BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9934bdyt1e3-datasheets-4798.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.1W | GULL WING | 250 | SI9934 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 19 ns | 35ns | 50 ns | 80 ns | 4.8A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | -1.4V | 0.035Ohm | 12V | 2 P-Channel (Dual) | -1.4 V | 35m Ω @ 6.4A, 4.5V | 1.4V @ 250μA | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg413dqt1e3-datasheets-3810.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | Unknown | 36V | 13V | 80Ohm | 16 | yes | Tin | No | 4 | 100pA | e3 | Non-Inverting | 600mW | GULL WING | 265 | 15V | 1.27mm | DG412 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 30mA | 4 | 35Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | NO | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4230DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4230dyt1ge3-datasheets-2231.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 3.2W | 2 | 2W | 2 | 8-SO | 950pF | 17 ns | 12ns | 10 ns | 18 ns | 7.3A | 20V | 30V | 3.2W | 20.5mOhm | 30V | 2 N-Channel (Dual) | 950pF @ 15V | 20.5mOhm @ 8A, 10V | 3V @ 250μA | 8A | 25nC @ 10V | Logic Level Gate | 20.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LEDQ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 4.4mm | 16 | 20 Weeks | No SVHC | 23Ohm | 16 | 1 | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 5V | 0.65mm | 8 | SINGLE-ENDED MULTIPLEXER | 30 | 1 | -5V | 23Ohm | 80ns | 3V~16V ±3V~8V | 8:1 | 1nA | 5.5pF 25pF | 72ns, 47ns | 11pC | 1 Ω | -98dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4942DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4942dyt1ge3-datasheets-2263.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | PURE MATTE TIN (SN) | 1.1W | GULL WING | 260 | SI4942 | 8 | Dual | 30 | 1.1W | 2 | FET General Purpose Powers | 13 ns | 10ns | 11 ns | 31 ns | 5.3A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 40V | 2 N-Channel (Dual) | 21m Ω @ 7.4A, 10V | 3V @ 250μA | 32nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2738DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2739dnt1e4-datasheets-5106.pdf | 8-UFQFN | 1.4mm | 1μA | 8 | 4.3V | 2.3V | 8Ohm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2738 | 8 | 1 | 40 | Multiplexer or Switches | 3V | 2 | Not Qualified | 720MHz | SPST | 60 ns | 50 ns | Single | SEPARATE OUTPUT | 8Ohm | 28 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 70ns | NC | 1:1 | 2.3V~4.3V | SPST - NC | 10nA | 4.4pF 3.8pF | 60ns, 50ns | 10.4pC | 100m Ω | -109dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4952DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4952dyt1ge3-datasheets-5615.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | 2.8W | GULL WING | 260 | SI4952 | 8 | Dual | 40 | 1.8W | 2 | 15 ns | 50ns | 50 ns | 20 ns | 7A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 30A | 25V | 2 N-Channel (Dual) | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG468DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 20μA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg467dvt1e3-datasheets-9273.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | Lead Free | 15μA | 6 | 10 Weeks | 19.986414mg | No SVHC | 36V | 7V | 9Ohm | 6 | yes | No | 1 | 5μA | e3 | Matte Tin (Sn) | 570mW | GULL WING | 260 | 15V | 0.95mm | DG468 | 6 | 2 | 40 | 570mW | Multiplexer or Switches | 1 | SPST | 140 ns | 80 ns | 20V | Dual, Single | 4.5V | -15V | 7Ohm | 9Ohm | 7Ohm | 61 dB | BREAK-BEFORE-MAKE | NO | 7V~36V ±4.5V~20V | 1:1 | SPST - NO | 1nA | 30pF 15pF | 140ns, 80ns | 21pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5915BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5915bdct1e3-datasheets-2313.pdf | 8-SMD, Flat Lead | 3.1W | SI5915 | 1206-8 ChipFET™ | 420pF | 4A | 8V | 3.1W | 2 P-Channel (Dual) | 420pF @ 4V | 70mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4A | 14nC @ 8V | Logic Level Gate | 70 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3540DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg3540dbt1e1-datasheets-7855.pdf | 8-WFBGA | 1μA | 21 Weeks | 5.5V | 1.8V | 4Ohm | 8 | No | 1nA | 400mW | DG3540 | 2 | 8-MicroFoot™ (1.5x1.5) | 360MHz | SPST | 46 ns | 37 ns | Single | 3.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO/NC | 2nA | 8pF | 41ns, 37ns | 1pC | 200mOhm (Max) | -66dB @ 10MHz |
