| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG190AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg190ap883-datasheets-7597.pdf | 16-DIP (0.300, 7.62mm) | 15V | Lead Free | 1.5mA | 30Ohm | 16 | 600μA | 900mW | 2 | 900mW | 2 | 16-DIP | 180 ns | 150 ns | 18V | 15V | Dual | 10V | 4 | 4 | 30Ohm | 30Ohm | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR310TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3.6Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 170pF | 7.9 ns | 9.9ns | 11 ns | 21 ns | 1.7A | 20V | 400V | 4V | 2.5W Ta 25W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 12nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 50μA | 16 | 8 Weeks | 1.627801g | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | 470mW | Multiplexer or Switches | 12/+-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9620PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf9620pbf-datasheets-1688.pdf | -200V | -3.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 40W | 1 | TO-220AB | 350pF | 15 ns | 25ns | 15 ns | 20 ns | -3.5A | 20V | 200V | -4V | 40W Tc | 450 ns | 1.5Ohm | -200V | P-Channel | 350pF @ 25V | -4 V | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3.5A Tc | 22nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG211BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 10μA | 16 | 8 Weeks | 547.485991mg | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 640mW | Multiplexer or Switches | 512/+-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7439DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7439dpt1ge3-datasheets-2761.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 90mOhm | 8 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 25 ns | 46ns | 46 ns | 115 ns | -5.2A | 20V | SILICON | DRAIN | SWITCHING | 150V | -4V | 1.9W Ta | 3A | 50A | -150V | P-Channel | 90m Ω @ 5.2A, 10V | 4V @ 250μA | 3A Ta | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-DIP (0.300, 7.62mm) | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 16 | 470mW | Multiplexer or Switches | 512/+-15V | 4 | Not Qualified | R-PDIP-T16 | SEPARATE OUTPUT | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NC | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9640GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi9640gpbf-datasheets-3957.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | 6.1A | 20V | 200V | -4V | 40W Tc | 300 ns | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 3.7A, 10V | 4V @ 250μA | 6.1A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG307AAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg307aak883-datasheets-7709.pdf | 14-CDIP (0.300, 7.62mm) | 2 | 14-CERDIP | 50Ohm | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 250ns, 150ns | 30pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3499DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3499dvt1ge3-datasheets-4647.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 14 Weeks | 19.986414mg | Unknown | 23mOhm | 6 | Tin | No | 1 | Single | 1.1W | 1 | 6-TSOP | 27 ns | 65ns | 110 ns | 210 ns | -7A | 5V | 8V | -350mV | 1.1W Ta | 23mOhm | P-Channel | -350 mV | 23mOhm @ 7A, 4.5V | 750mV @ 250μA | 5.3A Ta | 42nC @ 4.5V | 23 mΩ | 1.5V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 1μA | 16 | 44V | 4V | 85Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 640mW | Multiplexer or Switches | +-15/12V | Not Qualified | 300 ns | 200 ns | 22V | Dual, Single | 4V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | 150ns | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD19P06-60-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sud19p0660ge3-datasheets-5898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 60mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 2.3W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 8 ns | 9ns | 30 ns | 65 ns | -19A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1V | 2.3W Ta 38.5W Tc | 24.2 mJ | -60V | P-Channel | 1710pF @ 25V | 60m Ω @ 10A, 10V | 3V @ 250μA | 18.3A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 12V | Contains Lead | 500μA | 28 | 8 Weeks | 4.190003g | 36V | 7.5V | 60Ohm | 28 | no | No | 1 | e0 | TIN LEAD | 625mW | 15V | 2.54mm | 28 | 16 | SINGLE-ENDED MULTIPLEXER | 625mW | Multiplexer or Switches | 1 | 125 ns | 94 ns | 20V | 148 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 0.03A | 16:1 | ±5V~20V | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω |
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