| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | JESD-609 Code | Terminal Finish | Voltage | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4488DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4488dyt1e3-datasheets-8822.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 12 ns | 7ns | 10 ns | 22 ns | 5A | 20V | SILICON | 2V | 1.56W Ta | 0.05Ohm | 150V | N-Channel | 50m Ω @ 5A, 10V | 2V @ 250μA (Min) | 3.5A Ta | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI7110DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7110dnt1e3-datasheets-6972.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | S-XDSO-C5 | 12 ns | 10ns | 10 ns | 36 ns | 21.1A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 1.5W Ta | 60A | 0.0053Ohm | 20V | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 13.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI4842BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4842bdyt1ge3-datasheets-3156.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.2mOhm | 8 | yes | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 6.25W | 1 | FET General Purpose Powers | Not Qualified | 125 ns | 190ns | 13 ns | 38 ns | 28A | 20V | SILICON | 3W Ta 6.25W Tc | 30V | N-Channel | 3650pF @ 15V | 1.4 V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 28A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF820PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf820pbf-datasheets-8574.pdf | 500V | 2.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | 1 | Single | 50W | 1 | TO-220AB | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 4V | 50W Tc | 520 ns | 3Ohm | 500V | N-Channel | 360pF @ 25V | 4 V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI3407DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3407dvt1ge3-datasheets-9665.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 24mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | -8A | 12V | SILICON | 20V | -1.5V | 4.2W Tc | 7.5A | -20V | P-Channel | 1670pF @ 10V | -1.5 V | 24m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 8A Tc | 63nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI8851EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8851edbt2e1-datasheets-0756.pdf | 30-XFBGA | 30 | 21 Weeks | Unknown | 30 | EAR99 | BOTTOM | BALL | 260 | SI8851 | 40 | 1 | 35 ns | 40ns | 35 ns | 115 ns | 16.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | -1V | 660mW Ta | 80A | 0.0086Ohm | 20V | P-Channel | 6900pF @ 10V | 8m Ω @ 7A, 4.5V | 1V @ 250μA | 7.7A Ta | 180nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| IRFZ20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz20pbf-datasheets-1493.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100MOhm | 3 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | 260 | 3 | 1 | Single | 40 | 40W | 1 | FET General Purpose Power | 15 ns | 45ns | 15 ns | 20 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 4V | 40W Tc | TO-220AB | 60A | 5 mJ | 50V | N-Channel | 850pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRL640PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irl640pbf-datasheets-2042.pdf | 200V | 17A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 180mOhm | 3 | No | 17A | 200V | 1 | Single | 125W | 1 | TO-220AB | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 2V | 125W Tc | 470 ns | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 180 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||
| IRFIZ14GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfiz14gpbf-datasheets-2960.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | No | 1 | Single | 27W | 1 | TO-220-3 | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 8A | 20V | 60V | 4V | 27W Tc | 200mOhm | N-Channel | 300pF @ 25V | 4 V | 200mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLI530GPBF | Vishay Siliconix | $3.27 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli530gpbf-datasheets-3553.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 9.7A | 10V | 100V | 42W Tc | 160mOhm | N-Channel | 930pF @ 25V | 160mOhm @ 5.8A, 5V | 2V @ 250μA | 9.7A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRFI840GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi840gpbf-datasheets-4225.pdf | 500V | 4.6A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 850mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 2.5kV | 14 ns | 22ns | 21 ns | 55 ns | 4.6A | 20V | 500V | 4V | 40W Tc | 680 ns | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 2.8A, 10V | 4V @ 250μA | 4.6A Tc | 67nC @ 10V | 850 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF624PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf624pbf-datasheets-4672.pdf | 250V | 4.4A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.1Ohm | 3 | No | 1 | Single | 50W | TO-220AB | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 4.4A | 20V | 250V | 50W Tc | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 4.4A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFI730GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi730gpbf-datasheets-4994.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 12 Weeks | 6.000006g | 1Ohm | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 700pF | 10 ns | 15ns | 14 ns | 38 ns | 3.7A | 20V | 400V | 35W Tc | 1Ohm | N-Channel | 700pF @ 25V | 4 V | 1Ohm @ 2.1A, 10V | 4V @ 250μA | 3.7A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V |
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