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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4634DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4634dyt1ge3-datasheets-9413.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | 14 ns | 10ns | 8 ns | 33 ns | 24.5A | 20V | SILICON | SWITCHING | 30V | 30V | 2.6V | 2.5W Ta 5.7W Tc | 70A | 0.0052Ohm | 45 mJ | N-Channel | 3150pF @ 15V | 5.2m Ω @ 15A, 10V | 2.6V @ 250μA | 24.5A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFD310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfd310-datasheets-8460.pdf | 4-DIP (0.300, 7.62mm) | 6.29mm | 3.37mm | 5mm | 8 Weeks | Unknown | 4 | No | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 170pF | 8 ns | 9.9ns | 9.9 ns | 21 ns | 350mA | 20V | 400V | 4V | 1W Ta | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 210mA, 10V | 4V @ 250μA | 350mA Ta | 17nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SUM70101EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70101elge3-datasheets-0100.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | Pure Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 375W Tc | 120A | 240A | 0.0101Ohm | 281 mJ | P-Channel | 7000pF @ 50V | 10.1m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA14N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siha14n60ee3-datasheets-3348.pdf | TO-220-3 Full Pack | 18.1mm | 3 | 18 Weeks | NO | 1 | 147W | 1 | 150°C | R-PSFM-T3 | 15 ns | 35 ns | 13A | 30V | SILICON | SWITCHING | 147W Tc | TO-220AB | 32A | 0.309Ohm | 600V | N-Channel | 1205pF @ 100V | 309m Ω @ 7A, 10V | 4V @ 250μA | 13A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9210TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 170pF | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | 200V | -2V | 2.5W Ta 25W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | -2 V | 3Ohm @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF620STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620strlpbf-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 800mOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 3W Ta 50W Tc | 800mOhm | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI5441BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5441bdct1e3-datasheets-3149.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 45mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | Other Transistors | 15 ns | 50ns | 50 ns | 50 ns | 4.4A | 12V | SILICON | 20V | 1.3W Ta | -20V | P-Channel | 45m Ω @ 4.4A, 4.5V | 1.4V @ 250μA | 4.4A Ta | 22nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SQ2364EES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2364eest1ge3-datasheets-7819.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | SOT-23-3 (TO-236) | 60V | 3W Tc | N-Channel | 330pF @ 25V | 240mOhm @ 2A, 4.5V | 1V @ 250μA | 2A Tc | 2.5nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7463ADP-T1-GE3 | Vishay Siliconix | $90.90 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7463adpt1ge3-datasheets-4096.pdf | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | DUAL | C BEND | 8 | 1 | 5W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 15 ns | 14ns | 11 ns | 56 ns | -16.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -2.3V | 5W Ta 39W Tc | 46A | 70A | 45 mJ | -40V | P-Channel | 4150pF @ 20V | 10m Ω @ 15A, 10V | 2.3V @ 250μA | 46A Tc | 144nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIS488DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis488dnt1ge3-datasheets-8490.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 5.5mOhm | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 22 ns | 65ns | 9 ns | 24 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 3.7W Ta 52W Tc | 20 mJ | 40V | N-Channel | 1330pF @ 20V | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 32nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIE822DF-T1-GE3 | Vishay Siliconix | $2.80 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie822dft1ge3-datasheets-5894.pdf | 10-PolarPAK® (S) | 4 | 14 Weeks | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 31A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 50A | 80A | 0.0034Ohm | 45 mJ | 20V | N-Channel | 4200pF @ 10V | 3.4m Ω @ 18.3A, 10V | 3V @ 250μA | 50A Tc | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIA413DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia413djt1ge3-datasheets-0644.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 4 | 14 Weeks | Unknown | 29mOhm | 6 | yes | EAR99 | Tin | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N4 | 20 ns | 40ns | 40 ns | 70 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | 12V | -1V | 3.5W Ta 19W Tc | 40A | -12V | P-Channel | 1800pF @ 10V | -1 V | 29m Ω @ 6.7A, 4.5V | 1V @ 250μA | 12A Tc | 57nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI4442DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4442dyt1e3-datasheets-6361.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 4.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | 17 ns | 11ns | 11 ns | 125 ns | 22A | 12V | 30V | SILICON | 1.5V | 1.6W Ta | 30V | N-Channel | 1.5 V | 4.5m Ω @ 22A, 10V | 1.5V @ 250μA | 15A Ta | 50nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| SI7119DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7119dnt1ge3-datasheets-4330.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 1.05Ohm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 9 ns | 11ns | 12 ns | 27 ns | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | 3.7W Ta 52W Tc | 5A | -200V | P-Channel | 666pF @ 50V | 1.05 Ω @ 1A, 10V | 4V @ 250μA | 3.8A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFS9N60ATRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 750mOhm | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 2 V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SQ2362ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq2362est1ge3-datasheets-0878.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 3W | 1 | 175°C | 6 ns | 20ns | 18 ns | 14 ns | 4.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 1.5V | 3W Tc | 0.068Ohm | 26 pF | 60V | N-Channel | 550pF @ 30V | 95m Ω @ 4.5A, 10V | 2.5V @ 250μA | 4.3A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI3424BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3424bdvt1ge3-datasheets-2612.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 28MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1 | FET General Purpose Power | 18 ns | 85ns | 12 ns | 17 ns | 7A | 20V | SILICON | SWITCHING | 2.1W Ta 2.98W Tc | 7A | 30V | N-Channel | 735pF @ 15V | 28m Ω @ 7A, 10V | 3V @ 250μA | 8A Tc | 19.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7370DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7370dpt1ge3-datasheets-8633.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | No SVHC | 11MOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 12 ns | 50 ns | 15.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 9.6A | 50A | 60V | N-Channel | 4 V | 11m Ω @ 12A, 10V | 4V @ 250μA | 9.6A Ta | 57nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| SUD35N10-26P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud35n1026pe3-datasheets-3743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | 1.437803g | 26MOhm | 3 | Tin | unknown | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 10 ns | 10ns | 10 ns | 15 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 100V | 8.3W Ta 83W Tc | TO-252AA | 40A | 55 mJ | N-Channel | 2000pF @ 12V | 26m Ω @ 12A, 10V | 4.4V @ 250μA | 35A Tc | 47nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI9407BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9407bdyt1ge3-datasheets-7869.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 506.605978mg | No SVHC | 120mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.4W | 1 | Other Transistors | 150°C | 10 ns | 70ns | 30 ns | 35 ns | -4.7A | 20V | SILICON | SWITCHING | 60V | -3V | 2.4W Ta 5W Tc | -60V | P-Channel | 600pF @ 30V | 120m Ω @ 3.2A, 10V | 3V @ 250μA | 4.7A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SQM50P06-15L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50p0615lge3-datasheets-8764.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 60V | 150W Tc | P-Channel | 6120pF @ 25V | 15mOhm @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2308CES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq2308cest1ge3-datasheets-9997.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 175°C | R-PDSO-G3 | 4 ns | 12 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 2V | 2W Tc | TO-236AB | 60V | N-Channel | 205pF @ 30V | 150m Ω @ 2.3A, 10V | 2.5V @ 250μA | 2.3A Tc | 5.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irl510pbf-datasheets-1186.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | No SVHC | 540mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 5.6A | 10V | 100V | 2V | 43W Tc | 130 ns | 540mOhm | 100V | N-Channel | 250pF @ 25V | 2 V | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 5.6A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||
| IRLZ44PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irlz44pbf-datasheets-1724.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 28mOhm | 3 | 1 | Single | 150W | 1 | TO-220AB | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 2V | 150W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 2 V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| IRFR9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | -60V | -5.1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 500mOhm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 270pF | 11 ns | 63ns | 31 ns | 9.6 ns | -5.1A | 20V | 60V | -4V | 2.5W Ta 25W Tc | 160 ns | 500mOhm | -60V | P-Channel | 270pF @ 25V | 500mOhm @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF610SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 200V | 4V | 3W Ta 36W Tc | 1.5Ohm | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF830ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf830aspbf-datasheets-3844.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 500V | 3.1W Ta 74W Tc | 1.4Ohm | N-Channel | 620pF @ 25V | 4.5 V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHP10N40D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihp10n40dge3-datasheets-4383.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 147W | 1 | FET General Purpose Power | 12 ns | 18ns | 14 ns | 18 ns | 10A | 30V | SILICON | SWITCHING | 3V | 147W Tc | TO-220AB | 0.6Ohm | 400V | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-6M7_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | TO-220-3 Full Pack | 12 Weeks | TO-220AB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF7N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf7n60ege3-datasheets-4918.pdf | TO-220-3 Full Pack | 14 Weeks | 6.000006g | Unknown | 3 | EAR99 | No | 1 | Single | 31W | FET General Purpose Powers | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | 600V | 2V | 31W Tc | 7A | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V |
